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1. 发明授权

US06762541B1 Electron-emitting device and production process thereof 失效
标题翻译：电子发射器件及其制造方法
公开(公告)号：US06762541B1
公开(公告)日：2004-07-13
申请号：US09567522
申请日：2000-05-10
申请人： Masahiko Yamamoto , Asai Hironori , Kouhei Nakayama , Koji Suzuki
发明人： Masahiko Yamamoto , Asai Hironori , Kouhei Nakayama , Koji Suzuki
IPC分类号： H01J162
CPC分类号： H01J1/304 , H01J1/32
摘要： A horizontal type electron-emitting device structure and process of making, wherein the device includes a low-potential electrode and a high-potential electrode which are formed on a substrate, and an electron-emitting part placed between the electrodes. Above the substrate is an anode. A secondary-electron emitting material is arranged on the top of a region from the electron-emitting part to the high-potential electrode, so that secondary electrons are efficiently emitted to the anode, thereby to contribute to efficient electron emission. An auxiliary electrode may be formed, with a high-resistance or insulating layer interposed, on the substrate in the vicinity of the high-potential electrode. A voltage higher than that of the high-potential electrode is then applied to the auxiliary electrode, so that electrons emitted from the electron-emitting part are attracted to the auxiliary electrode.
摘要翻译：水平型电子发射器件结构和制造方法，其中器件包括形成在衬底上的低电位电极和高电位电极以及放置在电极之间的电子发射部分。衬底上方是阳极。二次电子发射材料被布置在从电子发射部分到高电位电极的区域的顶部，使得二次电子被有效地发射到阳极，从而有助于有效地发射电子。辅助电极可以在高电位电极附近的衬底上形成有高电阻或绝缘层。然后将高于高电位电极的电压施加到辅助电极，使得从电子发射部分发射的电子被吸引到辅助电极。

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