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1. 发明申请

US20130048070A1 TUNNEL PHOTOVOLTAIC 审中-公开
公开(公告)号：US20130048070A1
公开(公告)日：2013-02-28
申请号：US13585798
申请日：2012-08-14
申请人： Arash Hazeghi , Vivek Subramanian
发明人： Arash Hazeghi , Vivek Subramanian
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/062 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A tunneling photovoltaic (“TPV”) device using a high-κ dielectric as a tunneling layer is disclosed. The TPV includes a P-type doped silicon semiconductor substrate. Formed on its surface is an interfacial layer, between the semiconductor substrate and the high-κ tunneling layer. Formed on the high-κ tunneling layer is an electrode layer, or stack electrode layer, receiving charge carriers that tunnel through the tunneling layer, generating a current when the device is illuminated by light. The tunneling layer can be hafnium oxide or other suitable high-κ dielectrics. A method of fabricating a high-κ TPV is also disclosed. The TPV device according to the embodiments has improved internal quantum efficiency.
摘要翻译：隧道光伏（TPV）器件使用高压公开了作为隧穿层的电介质。 TPV包括P型掺杂硅半导体衬底。在其表面上形成界面层，在半导体衬底和高分子材料之间。隧道层。形成于高科技隧道层是电极层或堆叠电极层，接收穿过隧道层的电荷载流子，当器件被光照射时产生电流。隧道层可以是氧化铪或其他合适的高锰酸钾。电介质。一种制造高性能的方法 TPV也被公开。根据实施例的TPV装置具有改进的内部量子效率。

2. 发明申请

US20130076378A1 Integrated capacitance bridge for high-resolution wide-temperature-range capacitance measurement 有权
标题翻译：用于高分辨率宽温度范围电容测量的集成电容桥
公开(公告)号：US20130076378A1
公开(公告)日：2013-03-28
申请号：US13200701
申请日：2011-09-27
申请人： Arash Hazeghi , Joseph A. Sulpizio , David J.K. Goldhaber , H.S. Philip Wong
发明人： Arash Hazeghi , Joseph A. Sulpizio , David J.K. Goldhaber , H.S. Philip Wong
IPC分类号： G01R27/26
CPC分类号： G01R27/26
摘要： The present approach is based on the use of an integrated capacitance bridge circuit to measure the capacitance of a device under test. A significant feature of this approach is that the operating point is not the null point of the bridge circuit. Instead, the operating point of the bridge circuit is tuned to be away from the null point. By moving away from the null point, the output signal from the bridge circuit is increased. Preferably, this output signal is substantially larger than the input noise floor of an amplifier connected to the bridge circuit output, while being substantially less than GνDUT, where G is the gain provided by the bridge circuit transistor and νDUT is the AC signal applied to the device under test. Experiments on graphene devices and on carbon nanotube FETs demonstrate about 10 aF resolution (graphene) and about 13 aF resolution (carbon nanotube FET) at room temperature.
摘要翻译：本方法基于使用集成电容电桥电路来测量被测器件的电容。该方法的一个重要特征是工作点不是桥接电路的零点。相反，桥接电路的工作点被调整为远离零点。通过离开零点，来自桥接电路的输出信号增加。优选地，该输出信号基本上大于连接到桥式电路输出的放大器的输入本底噪声，同时基本上小于G＆ngr; DUT，其中G是由桥式电路晶体管提供的增益，并且DUT是AC 信号施加到被测器件。在石墨烯器件和碳纳米管FET上的实验在室温下表现出约10 aF分辨率（石墨烯）和约13 aF分辨率（碳纳米管FET）。

3. 发明授权

US09593014B2 Methods of establishing low-resistance electrical contact to carbon nanostructures with graphitic interfacial layer 有权
标题翻译：用石墨界面层建立与碳纳米结构的低电阻电接触的方法
公开(公告)号：US09593014B2
公开(公告)日：2017-03-14
申请号：US13199702
申请日：2011-09-07
申请人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H. S. Philip Wong
发明人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H. S. Philip Wong
IPC分类号： B32B9/00 , B82Y10/00 , H01B1/04 , C01B31/02 , B82Y40/00
CPC分类号： B82Y10/00 , B82Y40/00 , C01B32/158 , H01B1/04 , Y10T428/24851 , Y10T428/24917 , Y10T428/25 , Y10T428/30
摘要： A method of conductively coupling a carbon nanostructure and a metal electrode is provided that includes disposing a carbon nanostructure on a substrate, depositing a carbon-containing layer on the carbon nanostructure, according to one embodiment, and depositing a metal electrode on the carbon-containing layer. Further provided is a conductively coupled carbon nanostructure device that includes a carbon nanostructure disposed on a substrate, a carbon-containing layer disposed on the carbon nanostructure and a metal electrode disposed on the carbon-containing layer, where a low resistance coupling between the carbon nanostructure and metal elements is provided.
摘要翻译：提供了一种导电偶联碳纳米结构和金属电极的方法，其包括在基底上设置碳纳米结构，在碳纳米结构上沉积含碳层，并根据一个实施方式将金属电极沉积在含碳层。还提供了一种导电偶合碳纳米结构器件，其包括设置在基底上的碳纳米结构，设置在碳纳米结构上的含碳层和设置在含碳层上的金属电极，其中碳纳米结构之间的低电阻耦合并提供金属元件。

4. 发明授权

US08704537B2 Integrated capacitance bridge for high-resolution wide-temperature-range capacitance measurement 有权
标题翻译：用于高分辨率宽温度范围电容测量的集成电容桥
公开(公告)号：US08704537B2
公开(公告)日：2014-04-22
申请号：US13200701
申请日：2011-09-27
申请人： Arash Hazeghi , Joseph A. Sulpizio , David J. K. Goldhaber , H. S. Philip Wong
发明人： Arash Hazeghi , Joseph A. Sulpizio , David J. K. Goldhaber , H. S. Philip Wong
IPC分类号： G01R27/26
CPC分类号： G01R27/26
摘要： The present approach is based on the use of an integrated capacitance bridge circuit to measure the capacitance of a device under test. A significant feature of this approach is that the operating point is not the null point of the bridge circuit. Instead, the operating point of the bridge circuit is tuned to be away from the null point. By moving away from the null point, the output signal from the bridge circuit is increased. Preferably, this output signal is substantially larger than the input noise floor of an amplifier connected to the bridge circuit output, while being substantially less than GνDUT, where G is the gain provided by the bridge circuit transistor and νDUT is the AC signal applied to the device under test. Experiments on graphene devices and on carbon nanotube FETs demonstrate about 10 aF resolution (graphene) and about 13 aF resolution (carbon nanotube FET) at room temperature.
摘要翻译：本方法基于使用集成电容电桥电路来测量被测器件的电容。该方法的一个重要特征是工作点不是桥接电路的零点。相反，桥接电路的工作点被调整为远离零点。通过离开零点，来自桥接电路的输出信号增加。优选地，该输出信号基本上大于连接到桥式电路输出的放大器的输入本底噪声，同时基本上小于G＆ngr; DUT，其中G是由桥式电路晶体管提供的增益，并且DUT是AC 信号施加到被测器件。在石墨烯器件和碳纳米管FET上的实验在室温下表现出约10 aF分辨率（石墨烯）和约13 aF分辨率（碳纳米管FET）。

5. 发明申请

US20130059134A1 Methods of establishing low-resistance electrical contact to carbon nanostructures with graphitic interfacial layer 有权
标题翻译：用石墨界面层建立与碳纳米结构的低电阻电接触的方法
公开(公告)号：US20130059134A1
公开(公告)日：2013-03-07
申请号：US13199702
申请日：2011-09-07
申请人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H.S. Philip Wong
发明人： Yang Chai , Arash Hazeghi , Kuniharu Takei , Ali Javey , H.S. Philip Wong
IPC分类号： B32B3/10 , B32B15/04 , B32B5/16 , B05D5/12 , B32B9/04 , B82Y40/00
CPC分类号： B82Y10/00 , B82Y40/00 , C01B32/158 , H01B1/04 , Y10T428/24851 , Y10T428/24917 , Y10T428/25 , Y10T428/30
摘要： A method of conductively coupling a carbon nanostructure and a metal electrode is provided that includes disposing a carbon nanostructure on a substrate, depositing a carbon-containing layer on the carbon nanostructure, according to one embodiment, and depositing a metal electrode on the carbon-containing layer. Further provided is a conductively coupled carbon nanostructure device that includes a carbon nanostructure disposed on a substrate, a carbon-containing layer disposed on the carbon nanostructure and a metal electrode disposed on the carbon-containing layer, where a low resistance coupling between the carbon nanaostructure and metal elements is provided.
摘要翻译：提供了一种导电偶联碳纳米结构和金属电极的方法，其包括在基底上设置碳纳米结构，在碳纳米结构上沉积含碳层，并根据一个实施方式将金属电极沉积在含碳层。进一步提供了一种导电偶合的碳纳米结构器件，其包括设置在基底上的碳纳米结构，设置在碳纳米结构上的含碳层和设置在含碳层上的金属电极，其中碳纳米结构之间的低电阻耦合并提供金属元件。

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