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1. 发明申请

US20060252252A1 Electroless deposition processes and compositions for forming interconnects 审中-公开
标题翻译：用于形成互连的无电沉积工艺和组合物
公开(公告)号：US20060252252A1
公开(公告)日：2006-11-09
申请号：US11385290
申请日：2006-03-20
申请人： Zhize Zhu , Timothy Weidman , Michael Stewart , Arulkumar Shanmugasundram , Nety Krishna , Anthony Konecni
发明人： Zhize Zhu , Timothy Weidman , Michael Stewart , Arulkumar Shanmugasundram , Nety Krishna , Anthony Konecni
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for depositing a material on a substrate is provided which includes positioning a substrate containing a contact within a process chamber, exposing the substrate to at least one pretreatment step and depositing a fill the contact vias by an electroless deposition process. The pretreatment step contains multiple processes for exposing the substrate to a wet-clean solution, a hydrogen fluoride solution, a tungstate solution, a palladium activation solution, an acidic rinse solution, a complexing agent solution or combinations thereof. Generally, the HARC via contains a tungsten oxide surface and the shallow contact via may contain a tungsten silicide surface. In some example, the substrate is pretreated such that both vias are filled at substantially the same time by a nickel-containing material through an electroless deposition process.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积材料的方法，其包括将包含接触件的衬底定位在处理室内，将衬底暴露于至少一个预处理步骤，并通过无电沉积工艺沉积接触孔。预处理步骤包含用于将基底暴露于湿清洁溶液，氟化氢溶液，钨酸盐溶液，钯活化溶液，酸性漂洗溶液，络合剂溶液或其组合的多种方法。通常，HARC通孔包含氧化钨表面，浅接触通孔可以含有硅化钨表面。在一些实例中，将基材预处理，使得通过无电镀沉积工艺通过含镍材料在几乎相同的时间填充两个通孔。

2. 发明申请

US20120129351A1 COMPOSITE REMOVABLE HARDMASK 有权
标题翻译：组合式可拆卸HARDMASK
公开(公告)号：US20120129351A1
公开(公告)日：2012-05-24
申请号：US12952024
申请日：2010-11-22
申请人： Anthony Konecni , Josephine Juhwei Liu , Deenesh Padhi , Bok Hoen Kim , William H. Mc Clintock
发明人： Anthony Konecni , Josephine Juhwei Liu , Deenesh Padhi , Bok Hoen Kim , William H. Mc Clintock
IPC分类号： H01L21/467 , H01L21/461
CPC分类号： H01L21/31144 , H01L21/02115 , H01L21/02274
摘要： A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels.
摘要翻译：提供了一种在基板上形成无定形碳层的方法和装置。具有高应力水平的无定形碳层的第一部分由具有高稀释比的烃前体形成，并且包括任选的胺前体以增加应力升高的氮。通过降低烃前体的稀释比例和降低或除去胺气体，在第一部分上形成具有低应力水平的第二部分无定形碳层。可以调节压力，温度和RF功率输入，而不是或除了前体流速，并且不同的前体可用于不同的应力水平。

3. 发明授权

US06589865B2 Low pressure, low temperature, semiconductor gap filling process 有权
标题翻译：低压，低温，半导体缺口填充工艺
公开(公告)号：US06589865B2
公开(公告)日：2003-07-08
申请号：US09899194
申请日：2001-07-06
申请人： Girish A. Dixit , Anthony Konecni , Robert H. Havemann
发明人： Girish A. Dixit , Anthony Konecni , Robert H. Havemann
IPC分类号： H01L214763
CPC分类号： H01L21/76882 , H01L21/76838 , H01L21/76843 , H01L21/76862
摘要： A structure and process is provided for filling integrated circuit cavities such as contacts and vias. These structures are filled at relatively low temperatures of no more than about 300° C., and preferably between about 20°-275° C., which temperature range permits for the use of low dielectric constant (&kgr;) polymers (i.e., &kgr;
摘要翻译：提供了用于填充诸如触点和通孔的集成电路腔的结构和工艺。这些结构在不超过约300℃，优选在约20°-275℃之间的较低温度下填充，该温度范围允许使用低介电常数（κ）聚合物（即，〜3.0）。优选地，空腔设置有元素的无钛衬里以便于空腔填充，并且空腔填充有CVD铝，其通过在大气压至约50MPa的压力下的强力填充物引入空腔中，并且优选地不大约30MPa，在约100°-300℃的温度范围内。以上述方式填充的凹坑表现出比通过常规实践填充的结构低30％的电阻水平。

4. 发明授权

US08252699B2 Composite removable hardmask 有权
标题翻译：复合可移动硬掩模
公开(公告)号：US08252699B2
公开(公告)日：2012-08-28
申请号：US12952024
申请日：2010-11-22
申请人： Anthony Konecni , Josephine Juhwei Liu , Deenesh Padhi , Bok Hoen Kim , William H. McClintock
发明人： Anthony Konecni , Josephine Juhwei Liu , Deenesh Padhi , Bok Hoen Kim , William H. McClintock
IPC分类号： H01L21/033
CPC分类号： H01L21/31144 , H01L21/02115 , H01L21/02274
摘要： A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels.
摘要翻译：提供了一种在基板上形成无定形碳层的方法和装置。具有高应力水平的无定形碳层的第一部分由具有高稀释比的烃前体形成，并且包括任选的胺前体以增加应力升高的氮。通过降低烃前体的稀释比例和降低或除去胺气体，在第一部分上形成具有低应力水平的第二部分无定形碳层。可以调节压力，温度和RF功率输入，而不是或除了前体流速，并且不同的前体可用于不同的应力水平。

5. 发明授权

US06355558B1 Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films 有权
标题翻译：金属化结构和相关方法，以改善CVD铝/ PVD铝合金膜的晶体结构和腔体填充
公开(公告)号：US06355558B1
公开(公告)日：2002-03-12
申请号：US09332362
申请日：1999-06-10
申请人： Girish Dixit , Anthony Konecni
发明人： Girish Dixit , Anthony Konecni
IPC分类号： H01L2144
CPC分类号： H01L21/76849 , H01L21/32135 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76882 , H01L23/485 , H01L23/53223 , H01L2221/1089
摘要： A metallization structure, and associated method, for filling contact and via apertures to significantly reduce the occurrence of microvoids and provide desirable grain orientation and texture. A modified barrier structure is set forth for contact apertures, and a modified liner structure is set forth for via apertures. The metallization fill structure for contact apertures includes a first wetting or glue layer of refractory metal on the contact aperture, a layer of TiN on the first wetting layer, a second wetting layer of plasma-treated refractory metal on the barrier layer, a layer of CVD Al on the second wetting refractory metal layer, and a PVD Al alloy to fill the contact aperture. The fill structure for via apertures includes an initial plasma-treated refractory metal liner deposited on the via aperture. A CVD Al liner is positioned on the initial refractory metal liner. A PVD Al alloy layer is positioned on the CVD Al liner to fill the via aperture.
摘要翻译：金属化结构和相关方法，用于填充接触和通孔，以显着减少微孔的发生并提供期望的晶粒取向和纹理。介绍了用于接触孔的改进的阻挡结构，并且针对通孔设置了改进的衬垫结构。用于接触孔的金属化填充结构包括在接触孔上的难熔金属的第一润湿或胶层，第一润湿层上的TiN层，阻挡层上的等离子体处理的难熔金属的第二润湿层，第二润湿难熔金属层上的CVD Al和填充接触孔的PVD Al合金。用于通孔的填充结构包括沉积在通孔上的初始等离子体处理的难熔金属衬垫。 CVD Al衬垫位于初始难熔金属衬垫上。 PVD Al合金层位于CVD Al衬垫上以填充通孔。

6. 发明授权

US06333265B1 Low pressure, low temperature, semiconductor gap filling process 失效
标题翻译：低压，低温，半导体缺口填充工艺
公开(公告)号：US06333265B1
公开(公告)日：2001-12-25
申请号：US08766199
申请日：1996-12-12
申请人： Girish A. Dixit , Anthony Konecni , Robert H. Havemann
发明人： Girish A. Dixit , Anthony Konecni , Robert H. Havemann
IPC分类号： H01L2144
CPC分类号： H01L21/76882 , H01L21/76838 , H01L21/76843 , H01L21/76862
摘要： A structure and process is provided for filling integrated circuit cavities such as contacts and vias. These structures are filled at relatively low temperatures of no more than about 300° C., and preferably between about 20°-275° C., which temperature range permits for the use of low dielectric constant (&kgr;) polymers (i.e., &kgr;
摘要翻译：提供了用于填充诸如触点和通孔的集成电路腔的结构和工艺。这些结构在不超过约300℃，优选在约20°-275℃之间的较低温度下填充，该温度范围允许使用低介电常数（κ）聚合物（即，〜3.0）。优选地，空腔设置有不含钛的衬垫以促进空腔填充，并且空腔填充有CVD铝，其通过在大气压至约50MPa的压力下的强力填充物引入空腔中，并且优选地在约100°-300℃的温度下不超过约30Mpa。以上述方式填充的空腔表现出比通过常规实践填充的结构小至多30％的电阻水平。

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