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1. 发明申请

US20070261951A1 REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
标题翻译：氧化锌氧化物透明导电氧化物在大面积基材上的反应性溅射
公开(公告)号：US20070261951A1
公开(公告)日：2007-11-15
申请号：US11697476
申请日：2007-04-06
申请人： Yan Ye , Ankur Kadam , Yanping Li , Allen Lau , Makoto Inagawa , Bradley Stimson , Akihiro Hosokawa
发明人： Yan Ye , Ankur Kadam , Yanping Li , Allen Lau , Makoto Inagawa , Bradley Stimson , Akihiro Hosokawa
IPC分类号： C23C14/00
CPC分类号： C23C14/564 , C23C14/0063 , C23C14/35 , H01J37/3244 , H01J37/34 , H01J37/3438
摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
摘要翻译：本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

2. 发明申请

US20120000773A1 REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES 审中-公开
标题翻译：氧化锌氧化物透明导电氧化物在大面积基材上的反应性溅射
公开(公告)号：US20120000773A1
公开(公告)日：2012-01-05
申请号：US13231182
申请日：2011-09-13
申请人： Yan Ye , Ankur Kadam , Yanping Li , Allen Ka-Ling Lau , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
发明人： Yan Ye , Ankur Kadam , Yanping Li , Allen Ka-Ling Lau , Makoto Inagawa , Bradley O. Stimson , Akihiro Hosokawa
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/0063 , C23C14/35 , H01J37/3244 , H01J37/34 , H01J37/3438
摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
摘要翻译：本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

3. 发明申请

US20090029502A1 APPARATUSES AND METHODS OF SUBSTRATE TEMPERATURE CONTROL DURING THIN FILM SOLAR MANUFACTURING 审中-公开
标题翻译：薄膜太阳能制造过程中基板温度控制的设备及方法
公开(公告)号：US20090029502A1
公开(公告)日：2009-01-29
申请号：US12178255
申请日：2008-07-23
申请人： Soo Young Choi , Ankur Kadam , Yong-kee Chae
发明人： Soo Young Choi , Ankur Kadam , Yong-kee Chae
IPC分类号： H01L31/18 , C23C16/44 , C23C16/52
CPC分类号： H01L21/67236 , H01L21/67201
摘要： Embodiments of the invention generally provide apparatuses and methods of substrate temperature control during thin film solar manufacturing. In one embodiment a method for forming a thin film solar cell over a substrate is provided. The method comprises performing a temperature stabilization process on a substrate to pre-heat the substrate for a substrate stabilization time period in a first chamber, calculating a wait time period for a second chamber, wherein the wait time period is bases on the availability of the second chamber, the availability of a vacuum transfer robot adapted to transfer the substrate from the first chamber to the second chamber, or a combination of both the availability of the second chamber and the availability of the vacuum transfer robot, and adjusting the temperature stabilization time period to compensate for the loss of heat from the substrate during the wait time period.
摘要翻译：本发明的实施例通常提供薄膜太阳能制造期间的基板温度控制的装置和方法。在一个实施例中，提供了一种在衬底上形成薄膜太阳能电池的方法。该方法包括在基板上执行温度稳定化处理以在第一室中对基板预热基板稳定时间段，计算第二室的等待时间段，其中等待时间段基于可用性第二室，适于将基板从第一室转移到第二室的真空传送机器人的可用性，或第二室的可用性和真空传送机器人的可用性的组合，以及调节温度稳定时间以补偿在等待时间段期间来自基板的热量的损失。

4. 发明申请

US20080153280A1 REACTIVE SPUTTER DEPOSITION OF A TRANSPARENT CONDUCTIVE FILM 审中-公开
标题翻译：透明导电膜的反应性溅射沉积
公开(公告)号：US20080153280A1
公开(公告)日：2008-06-26
申请号：US11614461
申请日：2006-12-21
申请人： Yanping Li , Yan Ye , Yong-Kee Chae , Tae Kyung Won , Ankur Kadam , Shuran Sheng , Liwei Li
发明人： Yanping Li , Yan Ye , Yong-Kee Chae , Tae Kyung Won , Ankur Kadam , Shuran Sheng , Liwei Li
IPC分类号： H01L21/44
CPC分类号： C23C14/086 , C23C14/0073 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： Methods for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a back reflector in a photovoltaic device. In one embodiment, the method includes providing a substrate in a processing chamber, forming a first portion of a transparent conductive oxide layer on the substrate by a first sputter deposition step, and forming a second portion of the transparent conductive oxide layer by a second sputter deposition step.
摘要翻译：在本发明中提供溅射沉积透明导电氧化物（TCO）层的方法。透明导电氧化物层可以用作光伏器件中的后反射器。在一个实施例中，该方法包括在处理室中提供衬底，通过第一溅射沉积步骤在衬底上形成透明导电氧化物层的第一部分，以及通过第二溅射形成透明导电氧化物层的第二部分沉积步骤。

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