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1. 发明申请

WO2023083383A1 POWER AMPLIFIER 审中-公开
公开(公告)号：WO2023083383A1
公开(公告)日：2023-05-19
申请号：PCT/CN2022/132075
申请日：2022-11-15
申请人： AMPLEON NETHERLANDS B.V. , AMPLEON SEMICONDUCTORS (SHANGHAI) CO. LTD
发明人： JIANG, Xiaochuan , XIA, Yan , ZHANG, Binghui
IPC分类号： H03F1/02 , H03F1/56 , H03F3/193 , H03F3/21 , H03F3/60 , H03F3/217
摘要： The present invention relates to a power amplifier. The present invention particularly relates to switched-mode power amplifiers operable in a frequency range between 0.5GHz and 40GHz, and configured for outputting powers ranging from 1W to 1kW. The present invention further relates to an impedance matching stage to be used in such power amplifier. The impedance matching stage of the present invention comprises a short-circuited stub at its input, an open-circuited stub at its output, and a series branch connecting the input and output. By choosing suitable characteristic impedances and electrical lengths of the stubs and the series branch it becomes possible to independently choose the impedance to be presented to the power transistor at the fundamental and second harmonic frequencies.

2. 发明申请

WO2016124707A2 DOHERTY AMPLIFIER 审中-公开
标题翻译： DOHERTY放大器
公开(公告)号：WO2016124707A2
公开(公告)日：2016-08-11
申请号：PCT/EP2016/052423
申请日：2016-02-04
申请人： AMPLEON NETHERLANDS B.V.
发明人： MORONVAL, Xavier, Bruno, Jean
IPC分类号： H03F1/02
CPC分类号： H03F1/0288 , H03F1/56 , H03F1/565 , H03F3/195 , H03F3/213 , H03F3/245 , H03F3/604 , H03F2200/387 , H03F2200/423 , H03F2200/451
摘要： A Doherty amplifier (100, 200) having a set of amplifiers (120, 122) comprising a main amplifier (120) and at least one peak amplifier (122), each amplifier of the set of amplifiers (120, 122) having an input and an output, the at least one peak amplifier (122) configured to become operational at a respective threshold power, the Doherty amplifier (100, 200) further comprising: a Doherty amplifier output node (126) coupled to the outputs of the set of amplifiers (120, 122) through an impedance network (108), the impedance network (108) comprising: impedance inverting elements (128) configured to match the impedance of the outputs of the set of amplifiers (120, 122) at the Doherty amplifier output node (126); and a matching system (132) coupled to the outputs of the set of amplifiers (120, 122), the matching system (132) configured to impedance match the modulated impedance output of the main amplifier (120) to the impedance of the peak amplifiers (122).
摘要翻译：具有包括主放大器（120）和至少一个峰值放大器（122）的一组放大器（120,122）的Doherty放大器（100,200），所述放大器组（120,122）中的每个放大器具有输入以及输出，所述至少一个峰值放大器（122）被配置为以相应的阈值功率运行，所述多赫蒂放大器（100,200）还包括：多赫蒂放大器输出节点（126），耦合到所述一组所述阻抗网络（108）包括：阻抗反转元件（128），被配置为匹配所述放大器组（120,122）的所述输出端的阻抗，所述放大器（120,122）的集合在所述Doherty放大器输出节点（126）; 以及耦合到所述放大器组（120,122）的输出的匹配系统（132），所述匹配系统（132）被配置为将所述主放大器（120）的调制阻抗输出阻抗匹配到所述峰值放大器（122）。

3. 发明申请

US20220393010A1 Field-Effect Transistor Having Improved Layout 有权
公开(公告)号：US20220393010A1
公开(公告)日：2022-12-08
申请号：US17755029
申请日：2020-10-30
申请人： Ampleon Netherlands B.V.
发明人： Patrick Valk
IPC分类号： H01L29/423 , H01L29/417 , H01L29/08 , H01L29/78 , H01L29/778
摘要： Example embodiments relate to a field-effect transistors having improved layouts. One example field-effect transistor includes a semiconductor substrate on which at least one transistor cell array is arranged. Each transistor cell includes a first transistor cell unit. Each first transistor cell unit includes a plurality of gate fingers, a main gate finger segment, a plurality of drain fingers, and a main drain finger segment. Each first transistor cell unit also includes a main gate finger base connected to the main gate finger segment of the first transistor cell unit and extending from that main gate finger segment towards the main drain finger segment of that first transistor cell unit. Further, each first transistor cell unit includes a main drain finger base connected to the main drain finger segment of that first transistor cell and extending from that main drain finger segment towards that main gate finger segment.

4. 发明授权

US11482501B2 Amplifier having improved stability 有权
公开(公告)号：US11482501B2
公开(公告)日：2022-10-25
申请号：US17620462
申请日：2020-06-19
申请人： Ampleon Netherlands B.V.
发明人： Yi Zhu , Josephus Henricus Bartholomeus Van Der Zanden , Rob Mathijs Heeres
IPC分类号： H03F3/191 , H01L23/66 , H03F3/193 , H03F1/56 , H01L25/16 , H01L23/00
摘要： Example embodiments relate to amplifiers having improved stability. One example amplifier includes a conductive substrate, an input terminal arranged spaced apart from the conduct substrate, a first bondwire attachment structure electrically connected to or integrally formed with the input terminal, a first input matching capacitor having a non-grounded terminal and a grounded terminal, a second bondwire attachment structure electrically connected to the non-grounded terminal of the first input matching capacitor, a first semiconductor die on which a radiofrequency power transistor is arranged that has an output electrically connected to a fourth bondwire attachment structure, an output matching capacitor having a non-grounded terminal and a grounded terminal (the non-grounded terminal being electrically connected to a fifth bondwire attachment structure), an output terminal arranged spaced apart from the conductive substrate, a sixth bondwire attachment structure electrically connected to or integrally formed with the output terminal, and multiple bondwire assemblies.

5. 发明申请

US20220271715A1 Hybrid Doherty Power Amplifier Module 有权
公开(公告)号：US20220271715A1
公开(公告)日：2022-08-25
申请号：US17651593
申请日：2022-02-18
申请人： Ampleon Netherlands B.V.
发明人： Zhi Geng , Yi Zhu
IPC分类号： H03F1/02 , H03F3/195 , H03F3/24 , H03F1/56 , H01L23/66
摘要： Example embodiments relate to hybrid Doherty power amplifier modules. One embodiment includes a printed circuit board having an input RF terminal and an output RF terminal, and on which printed circuit board a primary Doherty amplifier is integrated. The primary Doherty amplifier includes a primary Doherty splitter arranged on the printed circuit board and configured for splitting an input RF signal received at the input RF terminal into a plurality of RF signal components. The primary Doherty amplifier also includes a plurality of amplifying paths, each amplifying path being partially integrated on a semiconductor die of a first kind mounted on the printed circuit board and partially integrated on a semiconductor die of a second kind mounted on the printed circuit board. Further, the primary Doherty amplifier includes a primary Doherty combiner arranged on the printed circuit board.

6. 发明申请

US20220157699A1 Electronic Molded Package 有权
公开(公告)号：US20220157699A1
公开(公告)日：2022-05-19
申请号：US17440268
申请日：2020-03-18
申请人： Ampleon Netherlands B.V.
发明人： Frans Meeuwsen , Jurgen Raben
IPC分类号： H01L23/495 , H01L23/053 , H01L23/00 , H01L23/66
摘要： Example embodiments relate to an electronic package, to an electronic device comprising such a package, and to a lead frame for manufacturing the electronic package. Some examples may particularly relate to electronic packages in which radiofrequency (RF) circuitry is arranged. According to the example embodiments, a width of the clamping portion is substantially larger than the width of the lead end portion, the width of the clamping portion being chosen such that bending of the inner part and/or body part relative to the outer part during the application of the molding compound was substantially prevented thereby having avoided flash and/or bleed of molding compound onto the inner part.

7. 发明授权

US10553543B2 Guard bond wires in an integrated circuit package 有权
公开(公告)号：US10553543B2
公开(公告)日：2020-02-04
申请号：US15573584
申请日：2016-05-12
申请人： Ampleon Netherlands B.V.
发明人： Vittorio Cuoco , Youri Volkhine , Yi Zhu , Josephus Van Der Zanden , Anna Walesieniuk
IPC分类号： H01L23/552 , H01L23/66 , H01L23/00 , H03H7/38
摘要： An integrated circuit package is provided. The integrated circuit package comprises a first and second guard bond wire. The first guard bond wire has a first and second end coupled to ground. The second guard bond wire has a first and second end coupled to ground. The integrated circuit package further comprises a die. The die is mounted between the first and second guard bond wires such that the first and second guard bond wires distort a magnetic field between at least an input terminal and an output terminal of the die.

8. 发明申请

US20190181106A1 Packaged RF Power Amplifier 审中-公开
公开(公告)号：US20190181106A1
公开(公告)日：2019-06-13
申请号：US16217955
申请日：2018-12-12
申请人： Ampleon Netherlands B.V.
发明人： Rob Mathijs Heeres , Freerk van Rijs
IPC分类号： H01L23/66 , H03F3/193 , H03F3/21 , H01L23/00 , H01L25/16 , H03F1/56
摘要： The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.

9. 发明申请

US20190172804A1 Integrated Passive Device for RF Power Amplifier Package 审中-公开
公开(公告)号：US20190172804A1
公开(公告)日：2019-06-06
申请号：US16261043
申请日：2019-01-29
申请人： Ampleon Netherlands B.V.
发明人： Johannes Adrianus Maria De Boet , Freerk Van Rijs , Iordan Konstantinov Sveshtarov
IPC分类号： H01L23/66 , H03H7/01 , H03H7/38 , H01L23/00 , H03F3/24 , H03F1/02 , H03F1/56 , H03F3/189 , H03F1/32 , H03F3/195
摘要： The present disclosure relates to a radio frequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such an RF power transistor package, and to an integrated passive die suitable for use in an RF power amplifier package. In example embodiments, an in-package impedance network is used that is connected to an output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit electrically connected to the second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground, where the first capacitive element is arranged in series with the second capacitive element.

10. 发明授权

US09820401B2 Packaged RF power transistor device having next to each other a ground and a video lead for connecting a decoupling capacitor, RF power amplifier 有权
公开(公告)号：US09820401B2
公开(公告)日：2017-11-14
申请号：US14527138
申请日：2014-10-29
申请人： Ampleon Netherlands B.V.
发明人： Yi Zhu , Josephus van der Zanden
IPC分类号： H05K7/14 , H03F1/56 , H01L23/66 , H03F3/189 , H03F3/24
CPC分类号： H05K7/14 , H01L23/66 , H01L2223/6644 , H01L2223/665 , H01L2924/0002 , H03F1/56 , H03F3/189 , H03F3/245 , H03F2200/222 , H03F2200/387 , H01L2924/00
摘要： A packaged Radio Frequency power transistor device is described, which comprises a component carrier a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier, a ground connection being electrically connected to the source, an output lead being electrically connected to the drain, a resonance circuit being electrically inserted between the output lead and the ground connection, and a video lead being electrically connected to the resonance circuit. The video lead is configured for being connected to a first contact of a decoupling capacitor. The ground connection is configured for being connected to a second contact of the decoupling capacitor. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device.

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