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    • 6. 发明授权
    • Voltage controlled resonant transmission semiconductor device
    • 压控谐振传输半导体器件
    • US4672423A
    • 1987-06-09
    • US801497
    • 1985-11-22
    • Alan B. FowlerAllan M. Hartstein
    • Alan B. FowlerAllan M. Hartstein
    • H01L29/66H01L29/78
    • B82Y10/00H01L29/66977
    • In a transistor structure a buried gate positioned in the layer above a conduction channel and below a broad gate which overlaps the source and drain, when the voltages applied to the buried gate and the overlapping gate are varied independently, a potential well between two barriers can be established which permits conduction by the physical mechanism of resonant transmission. The potential well between two barriers required for the resonant transmission mechanism is achieved in one structure by a buried gate under an overlapping gate with both width and separation dimension control and in a second structure using split-buried gate under an overlapping gate that is embossed in the region of the split gate. With gate and separation dimensions of the order of 1000 .ANG. switching speeds of the order of 10.sup.-12 seconds are achieved.
    • 在晶体管结构中,当施加到掩埋栅极和重叠栅极的电压独立地变化时,位于导电沟道上方并且在与栅极和漏极重叠的宽栅极之下的层中的掩埋栅极,两个势垒之间的势阱可以 可以通过谐振传输的物理机制进行导通。 谐振传输机构所需的两个障碍之间的潜在井在一个结构中通过在具有宽度和间隔尺寸控制的重叠栅极下的掩埋栅极实现,并且在第二结构中使用在重叠栅极下方的分裂掩埋栅极被压印 分裂门的区域。 具有门极和分离尺寸为1000安培开关速度的量级为10-12秒。