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1. 发明申请

US20110140244A1 METHOD FOR ROUTING A CHAMFERED SUBSTRATE 有权
标题翻译：路由衬底的方法
公开(公告)号：US20110140244A1
公开(公告)日：2011-06-16
申请号：US12965135
申请日：2010-12-10
申请人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
发明人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a method for routing a chamfered substrate, having applications in the field of electronics, optics, or optoelectronics, which involves depositing a layer of a protective material on a peripheral annular zone of the substrate preferably with the aid of a plasma, partially etching the protective material with the aid of a plasma, so as to preserve a protective ring of the deposited material on the front face of the substrate, this ring located at a distance from the edge of the substrate, so as to delimit an accessible peripheral annular zone, etching a thickness of the material constituting the substrate to be routed, preferably with the aid of a plasma that is level with the accessible peripheral annular zone of the substrate, and removing the ring of protective material preferably with the aid of a plasma.
摘要翻译：本发明涉及一种用于布线倒角衬底的方法，其具有在电子学，光学或光电子学领域中的应用，其包括优选借助于等离子体在衬底的外围环形区域上沉积保护材料层，借助于等离子体部分地蚀刻保护材料，以便在衬底的前表面上保留沉积材料的保护环，该环位于离衬底边缘一定距离处，以限定可接近的蚀刻构成要路由的衬底的材料的厚度，优选借助于与衬底的可接近的外围环形区域平齐的等离子体，并且优选地借助于衬底的方法去除保护材料环等离子体。

2. 发明授权

US08617962B2 Method for finishing a substrate of the semiconductor-on-insulator type 有权
标题翻译：绝缘体半导体型基板的整理方法
公开(公告)号：US08617962B2
公开(公告)日：2013-12-31
申请号：US13582777
申请日：2011-03-14
申请人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sebastien Kerdiles
发明人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sebastien Kerdiles
IPC分类号： H01L21/30
CPC分类号： H01L21/76251 , H01L21/02087
摘要： The invention relates to finishing a substrate of the semiconductor-on-insulator (SeOI) type comprising an insulator layer buried between two semiconducting material layers. The method successively comprises routing the annular periphery of the substrate so as to obtain a routed substrate, and encapsulating the routed substrate so as to cover the routed side edge of the buried insulator layer by means of a semiconducting material.
摘要翻译：本发明涉及整理绝缘体上半导体（SeOI）类型的衬底，其包括埋在两个半导体材料层之间的绝缘体层。该方法依次包括布置基板的环形周边以获得布线基板，并且封装布线的基板，以便通过半导体材料覆盖掩埋绝缘体层的布线侧边缘。

3. 发明授权

US08357587B2 Method for routing a chamfered substrate 有权
标题翻译：路由倒角衬底的方法
公开(公告)号：US08357587B2
公开(公告)日：2013-01-22
申请号：US12965135
申请日：2010-12-10
申请人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
发明人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sébastien Kerdiles
IPC分类号： H01L21/30
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a method for routing a chamfered substrate, having applications in the field of electronics, optics, or optoelectronics, which involves depositing a layer of a protective material on a peripheral annular zone of the substrate preferably with the aid of a plasma, partially etching the protective material with the aid of a plasma, so as to preserve a protective ring of the deposited material on the front face of the substrate, this ring located at a distance from the edge of the substrate, so as to delimit an accessible peripheral annular zone, etching a thickness of the material constituting the substrate to be routed, preferably with the aid of a plasma that is level with the accessible peripheral annular zone of the substrate, and removing the ring of protective material preferably with the aid of a plasma.
摘要翻译：本发明涉及一种用于布线倒角衬底的方法，其具有在电子学，光学或光电子学领域中的应用，其包括优选借助于等离子体在衬底的外围环形区域上沉积保护材料层，借助于等离子体部分地蚀刻保护材料，以便在衬底的前表面上保留沉积材料的保护环，该环位于离衬底边缘一定距离处，以限定可接近的蚀刻构成要路由的衬底的材料的厚度，优选借助于与衬底的可接近的外围环形区域平齐的等离子体，并且优选地借助于衬底的方法去除保护材料环等离子体。

4. 发明申请

US20130005122A1 METHOD FOR FINISHING A SUBSTRATE OF THE SEMICONDUCTOR-ON-INSULATOR TYPE 有权
标题翻译：绝缘子半导体器件基片的修整方法
公开(公告)号：US20130005122A1
公开(公告)日：2013-01-03
申请号：US13582777
申请日：2011-03-14
申请人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sebastien Kerdiles
发明人： Walter Schwarzenbach , Aziz Alami-Idrissi , Alexandre Chibko , Sebastien Kerdiles
IPC分类号： H01L21/20
CPC分类号： H01L21/76251 , H01L21/02087
摘要： The invention relates to finishing a substrate of the semiconductor-on-insulator (SeOI) type comprising an insulator layer buried between two semiconducting material layers. The method successively comprises: routing the annular periphery of the substrate so as to obtain a routed substrate, and encapsulating the routed substrate so as to cover the routed side edge of the buried insulator layer by means of a semiconducting material.
摘要翻译：本发明涉及整理绝缘体上半导体（SeOI）类型的衬底，其包括埋在两个半导体材料层之间的绝缘体层。该方法依次包括：布置基板的环形周边以获得布线基板，并封装布线的基板，以便通过半导体材料覆盖掩埋绝缘体层的布线侧边缘。

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