专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08697467B2 Surface and gas phase doping of III-V semiconductors 有权
标题翻译： III-V半导体的表面和气相掺杂
公开(公告)号：US08697467B2
公开(公告)日：2014-04-15
申请号：US12843271
申请日：2010-07-26
申请人： Ali Javey , Alexandra C. Ford , Johnny C. Ho
发明人： Ali Javey , Alexandra C. Ford , Johnny C. Ho
IPC分类号： H01L29/00
CPC分类号： H01L21/2233 , H01L21/228 , H01L29/0673 , H01L29/068 , H01L29/207 , H01L29/78681
摘要： Compound semiconductor devices and methods of doping compound semiconductors are provided. Embodiments of the invention provide post-deposition (or post-growth) doping of compound semiconductors, enabling nanoscale compound semiconductor devices including diodes and transistors. In one method, a self-limiting monolayer technique with an annealing step is used to form shallow junctions. By forming a sulfur monolayer on a surface of an InAs substrate and performing a thermal annealing to drive the sulfur into the InAs substrate, n-type doping for InAs-based devices can be achieved. The monolayer can be formed by surface chemistry reactions or a gas phase deposition of the dopant. In another method, a gas-phase technique with surface diffusion is used to form doped regions. By performing gas-phase surface diffusion of Zn into InAs, p-type doping for InAs-based devices can be achieved. Both bulk and nanowire devices using compound semiconductors can be fabricated using these surface and gas-phase doping processes.
摘要翻译：提供了化合物半导体器件和掺杂化合物半导体的方法。本发明的实施方案提供化合物半导体的后沉积（或后生长）掺杂，使纳米尺度的化合物半导体器件包括二极管和晶体管。在一种方法中，使用具有退火步骤的自限制单层技术形成浅结。通过在InAs衬底的表面上形成硫单层并执行热退火以将硫驱动到InAs衬底中，可以实现基于InAs的器件的n型掺杂。单层可以通过表面化学反应或掺杂剂的气相沉积形成。在另一种方法中，使用具有表面扩散的气相技术来形成掺杂区域。通过使Zn进入InAs的气相表面扩散，可以实现基于InAs的器件的p型掺杂。可以使用这些表面和气相掺杂工艺制造使用化合物半导体的体和纳米线器件。

2. 发明申请

US20120018702A1 SURFACE AND GAS PHASE DOPING OF III-V SEMICONDUCTORS 有权
标题翻译： III-V半导体的表面和气相位移
公开(公告)号：US20120018702A1
公开(公告)日：2012-01-26
申请号：US12843271
申请日：2010-07-26
申请人： Ali Javey , Alexandra C. Ford , Johnny C. Ho
发明人： Ali Javey , Alexandra C. Ford , Johnny C. Ho
IPC分类号： H01L29/12 , H01L21/22 , H01L29/06
CPC分类号： H01L21/2233 , H01L21/228 , H01L29/0673 , H01L29/068 , H01L29/207 , H01L29/78681
摘要： Compound semiconductor devices and methods of doping compound semiconductors are provided. Embodiments of the invention provide post-deposition (or post-growth) doping of compound semiconductors, enabling nanoscale compound semiconductor devices including diodes and transistors. In one method, a self-limiting monolayer technique with an annealing step is used to form shallow junctions. By forming a sulfur monolayer on a surface of an InAs substrate and performing a thermal annealing to drive the sulfur into the InAs substrate, n-type doping for InAs-based devices can be achieved. The monolayer can be formed by surface chemistry reactions or a gas phase deposition of the dopant. In another method, a gas-phase technique with surface diffusion is used to form doped regions. By performing gas-phase surface diffusion of Zn into InAs, p-type doping for InAs-based devices can be achieved. Both bulk and nanowire devices using compound semiconductors can be fabricated using these surface and gas-phase doping processes.
摘要翻译：提供了化合物半导体器件和掺杂化合物半导体的方法。本发明的实施方案提供化合物半导体的后沉积（或后生长）掺杂，使纳米尺度的化合物半导体器件包括二极管和晶体管。在一种方法中，使用具有退火步骤的自限制单层技术形成浅结。通过在InAs衬底的表面上形成硫单层并执行热退火以将硫驱动到InAs衬底中，可以实现基于InAs的器件的n型掺杂。单层可以通过表面化学反应或掺杂剂的气相沉积形成。在另一种方法中，使用具有表面扩散的气相技术来形成掺杂区域。通过使Zn进入InAs的气相表面扩散，可以实现基于InAs的器件的p型掺杂。可以使用这些表面和气相掺杂工艺制造使用化合物半导体的体和纳米线器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式