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1. 发明申请

US20110248167A1 Bolometric sensor with high TCR and tunable low resistivity 有权
标题翻译：具有高TCR和可调低电阻率的测温传感器
公开(公告)号：US20110248167A1
公开(公告)日：2011-10-13
申请号：US12924930
申请日：2010-10-08
申请人： Michael A. Gurvitch , Serge Luryi , Aleksandr Y. Polyakov , Aleksandr Shabalov
发明人： Michael A. Gurvitch , Serge Luryi , Aleksandr Y. Polyakov , Aleksandr Shabalov
IPC分类号： G01J5/10
CPC分类号： G01J5/24 , G01J5/20
摘要： The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO2 (or doped VO2) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously. Means for measuring of the sensor R(T) characteristic is provided together with the means of achieving and controlling the correct sensor positioning at the operating temperature inside one of these NHBs.
摘要翻译：本发明提供了在相变VO2（或掺杂的VO2）膜的电阻滞后区域中操作感测元件或测辐射热计的新颖方式。本发明基于一种新颖的原理，即在主环路内部的小的滞后回路成为足够小的温度偏移的单值或非滞后。该单值R（T）分支的特征在于在室温下与半导体相基本上具有相同的电阻率温度系数（TCR）。这些非滞后分支（NHB）可以靠近主回路的金属相端，从而提供比纯半导体相的可调电阻率数量级。在这些NHB之一中操作焦点计划阵列允许同时具有高TCR和低电阻。传感器R（T）特性的测量装置与在这些NHB之一内的工作温度下实现和控制正确的传感器定位的装置一起提供。

2. 发明授权

US08158941B2 Bolometric sensor with high TCR and tunable low resistivity 有权
标题翻译：具有高TCR和可调低电阻率的测温传感器
公开(公告)号：US08158941B2
公开(公告)日：2012-04-17
申请号：US12924930
申请日：2010-10-08
申请人： Michael A. Gurvitch , Serge Luryi , Aleksandr Y. Polyakov , Aleksandr Shabalov
发明人： Michael A. Gurvitch , Serge Luryi , Aleksandr Y. Polyakov , Aleksandr Shabalov
IPC分类号： G01J5/00
CPC分类号： G01J5/24 , G01J5/20
摘要： The present invention provides a novel way of operating sensing elements or bolometers in the resistive hysteresis region of a phase-transitioning VO2 (or doped VO2) films. The invention is based on a novel principle that minor hysteresis loops inside the major loop become single-valued or non-hysteretic for sufficiently small temperature excursions. This single valued R(T) branches being characterized by essentially the same temperature coefficient of resistivity (TCR) as the semiconducting phase at room temperature. These non-hysteretic branches (NHB) can be located close to the metallic-phase end of the major loop, thus providing for tunable resistivity orders of magnitude lower than that of a pure semiconducting phase. Operating the Focal Plan Array in one of these NHBs allows for having high TCR and low resistivity simultaneously. Means for measuring of the sensor R(T) characteristic is provided together with the means of achieving and controlling the correct sensor positioning at the operating temperature inside one of these NHBs.
摘要翻译：本发明提供了在相变VO2（或掺杂的VO2）膜的电阻滞后区域中操作感测元件或测辐射热计的新颖方式。本发明基于一种新颖的原理，即在主环路内部的小的滞后回路成为足够小的温度偏移的单值或非滞后。该单值R（T）分支的特征在于在室温下与半导体相基本上具有相同的电阻率温度系数（TCR）。这些非滞后分支（NHB）可以靠近主回路的金属相端，从而提供比纯半导体相的可调电阻率数量级。在这些NHB之一中操作焦点计划阵列允许同时具有高TCR和低电阻。传感器R（T）特性的测量装置与在这些NHB之一内的工作温度下实现和控制正确的传感器定位的装置一起提供。

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