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    • 4. 发明授权
    • Matrix assisted pulsed laser evaporation direct write
    • 矩阵辅助脉冲激光蒸发直写
    • US06177151B1
    • 2001-01-23
    • US09318134
    • 1999-05-25
    • Douglas B. ChriseyR. Andrew McGillAlberto Pique
    • Douglas B. ChriseyR. Andrew McGillAlberto Pique
    • B23K2600
    • C23C14/048B01J2219/00441B01J2219/00527B01J2219/00596B01J2219/00605B01J2219/0061B01J2219/00612B01J2219/00659B01J2219/0072B01J2219/00745B01J2219/0075C23C14/28C40B40/18C40B60/14H01L2221/68363
    • An device for depositing a transfer material onto a receiving substrate includes a source of pulsed laser energy, a receiving substrate, and a target substrate. The target substrate comprises a laser transparent support having a back surface and a front surface. The front surface has a coating that comprises a mixture of the transfer material to be deposited and a matrix material. The matrix material is a material that has the property that, when it is exposed to pulsed laser energy, it is more volatile than the transfer material. The source of pulsed laser energy is be positioned in relation to the target substrate so that pulsed laser energy is directed through the back surface of the target substrate and through the laser-transparent support to strike the coating at a defined location with sufficient energy to volatilize the matrix material at the location, causing the coating to desorb from the location and be lifted from the surface of the support. The receiving substrate is positioned in a spaced relation to the target substrate so that the transfer material in the desorbed coating can be deposited at a defined location on the receiving substrate.
    • 用于将转移材料沉积到接收衬底上的装置包括脉冲激光能量源,接收衬底和目标衬底。 目标基板包括具有后表面和前表面的激光透明支撑件。 前表面具有包含待沉积的转印材料和基体材料的混合物的涂层。 基体材料是具有这样的特性,当暴露于脉冲激光能量时,它比转印材料更易挥发。 脉冲激光能量的来源相对于目标衬底定位,使得脉冲激光能量被引导通过目标衬底的背表面并且穿过激光透明支撑件,以在足够的能量挥发的特定位置上对涂层进行打击 在该位置处的基质材料,使得涂层从该位置解吸并从支撑体的表面提起。 接收衬底被定位成与目标衬底间隔开的关系,使得解吸附的涂层中的转印材料可以沉积在接收衬底上的限定位置。
    • 5. 发明授权
    • Superconducting garnet thin film system
    • 超导石榴石薄膜系统
    • US6074990A
    • 2000-06-13
    • US791330
    • 1997-01-31
    • Alberto PiqueKolagani S. HarshavardhanThirumalai Venkatesan
    • Alberto PiqueKolagani S. HarshavardhanThirumalai Venkatesan
    • C30B23/02H01L39/24H01L39/02B05D5/12
    • C30B23/02C30B29/22C30B29/225H01L39/2461Y10S428/93Y10S505/701Y10S505/729
    • A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. The HTSC layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) in parallel aligned orientation and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.
    • 提供了一种用于高频微波应用的超导石榴石薄膜系统(10),其中单晶高温超导(HTSC)层(18)与石榴石衬底(12)集成。 第一钙钛矿化合物缓冲层(14)在石榴石基材层(12)的上表面外延生长,并且定义了小于石榴石基材层(12)的晶格常数的晶格常数,其中第一钙钛矿层被排列成 相对于石榴石基材层(12)的立方体平行取向的立方体。 第二钙钛矿层(16)在第一钙钛矿层(14)的上表面上以与第一层(14)成45°的取向外延生长,并且限定了小于第一钙钛矿层的晶格常数的晶格常数。 HTSC层(18)以平行排列的方向外延生长在第二钙钛矿层(16)的上表面上,并且与第二钙钛矿化合物层(16)晶格匹配,以将高分子超导层 18)具有高频微波应用。
    • 6. 发明授权
    • Pulsed laser passive filter deposition system
    • 脉冲激光无源滤波器沉积系统
    • US5458686A
    • 1995-10-17
    • US398146
    • 1995-03-03
    • Alberto PiqueThirumalai VenkatesanSteven Green
    • Alberto PiqueThirumalai VenkatesanSteven Green
    • C23C14/04C23C14/28C23C14/00
    • C23C14/28C23C14/044
    • This invention directs itself to a pulsed laser passive filter deposition system (10) which provides a blocking and transparent mask mechanism (34) placed between a target (14) and a substrate (12) to be coated. The blocking and transparent mask mechanism (34) includes a blocking member (36) which casts a blocking shadow having a greater cross-sectional area than the substrate (12), to block linearly travelling clustered species particulates (22) from impinging on the substrate (12). The blocking and transparent mask mechanism (34) also includes annularly shaped disk members (38 and 44) having openings (40 and 46) formed in a central portion to allow passage of the atomic species (20) of the composition being coated on the substrate (12) where the atomic species (20) is deflected by impingement with background gas molecules (26). In this manner, the substrate (12) is coated with the atomic species (20) in a uniform coating without having the clustered species (22) being coated on the substrate (12).
    • 本发明将其自身引导到脉冲激光无源滤波器沉积系统(10),其提供放置在待涂覆的靶(14)和基底(12)之间的阻挡和透明掩模机构(34)。 阻挡和透明掩模机构(34)包括阻挡构件(36),其阻挡具有比衬底(12)更大的横截面面积的阻挡阴影,以阻挡线性移动的聚集物质微粒(22)撞击到衬底 (12)。 阻挡和透明掩模机构(34)还包括具有形成在中心部分中的开口(40和46)的环形盘状构件(38和44),以允许待涂覆的组合物的原子物质(20)通过基底 (12)其中原子物质(20)通过与背景气体分子(26)的冲击而偏转。 以这种方式,基板(12)以均匀的涂层涂覆有原子物质(20),而不会将聚集物质(22)涂覆在基底(12)上。