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1. 发明申请

US20090206275A1 ACCELERATOR PARTICLE BEAM APPARATUS AND METHOD FOR LOW CONTAMINATE PROCESSING 审中-公开
标题翻译：加速器颗粒光束装置和低污染处理方法
公开(公告)号：US20090206275A1
公开(公告)日：2009-08-20
申请号：US12244687
申请日：2008-10-02
申请人： Francois J. Henley , Albert Lamm , Adam Brailove
发明人： Francois J. Henley , Albert Lamm , Adam Brailove
IPC分类号： H01J27/00 , A61N5/00
CPC分类号： H01J37/3171 , H01J2237/022 , H01J2237/04735 , H01J2237/057 , H01J2237/18 , H01J2237/31705 , H01L21/76254
摘要： A system of introducing a particle beam such as a linear accelerator particle beam for low contaminate processing. The system includes an accelerator apparatus configured to generate a first particle beam including at least a first ionic specie in an energy level of 1 MeV to 5 MeV or greater. Additionally, the system includes a beam filter coupled to the linear accelerator apparatus to receive the first particle beam. The beam filter is in a first chamber and configured to generate a second particle beam with substantially the first ionic specie only. The first chamber is associated with a first pressure. The system further includes an end-station including a second chamber coupled to the first chamber for extracting the second particle beam. The second particle beam is irradiated onto a planar surface of a bulk workpiece loaded in the second chamber for implanting the first ionic specie. The second chamber is associated with a second pressure that is higher than the first pressure. Optional beam scanning can also be added between the beam filter and the end-station.
摘要翻译：引入粒子束的系统，例如用于低污染处理的线性加速器粒子束。该系统包括加速器装置，该加速器装置被配置为产生第一粒子束，该粒子束包括至少第一离子物质，其能级为1MeV至5MeV或更大。另外，该系统包括耦合到线性加速器装置以接收第一粒子束的束过滤器。束过滤器位于第一室中，并且被配置为仅产生基本上为第一离子物质的第二粒子束。第一室与第一压力相关。该系统还包括终端站，其包括耦合到第一室的第二室，用于提取第二粒子束。将第二粒子束照射到装载在第二室中的体积工件的平坦表面上，用于植入第一离子物质。第二室与第二压力相关联，第二压力高于第一压力。也可以在波束过滤器和终端站之间添加可选的波束扫描。

2. 发明申请

US20080128641A1 APPARATUS AND METHOD FOR INTRODUCING PARTICLES USING A RADIO FREQUENCY QUADRUPOLE LINEAR ACCELERATOR FOR SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：使用用于半导体材料的无线电频率四线性加速器引入颗粒的装置和方法
公开(公告)号：US20080128641A1
公开(公告)日：2008-06-05
申请号：US11936582
申请日：2007-11-07
申请人： Francois J. Henley , Albert Lamm , Babak Adibi
发明人： Francois J. Henley , Albert Lamm , Babak Adibi
IPC分类号： G21K5/10 , H05H9/00
CPC分类号： H01L21/26506 , H01J37/04 , H01J37/3171 , H01J2237/04737 , H01L21/2658 , H01L21/26593 , H05H7/04 , H05H7/10 , H05H9/00
摘要： A system for forming one or more detachable semiconductor films capable of being free-standing. The apparatus includes an ion source to generate a plurality of collimated charged particles at a first energy level. The system includes a linear accelerator having a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N successively coupled to each other, where N is an integer greater than 1. The linear accelerator controls and accelerates the plurality of collimated charged particles at the first energy level into a beam of charge particles having a second energy level. RFQ element numbered 1 is operably coupled to the ion source. The system includes an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator. In a specific embodiment, the system includes a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles. The system includes a process chamber coupled to the beam expander and a workpiece provided within the process chamber to be implanted
摘要翻译：一种用于形成能够独立的一个或多个可分离半导体膜的系统。该装置包括用于在第一能级产生多个准直带电粒子的离子源。该系统包括线性加速器，其具有从1到N编号的多个模块化射频四极杆（RFQ）元件，其连续地彼此耦合，其中N是大于1的整数。线性加速器控制和加速多个准直带电粒子在第一能级进入具有第二能级的电荷粒子束。编号为1的RFQ元件可操作地耦合到离子源。该系统包括耦合到RFQ线性加速器的编号为N的RFQ元件的出口孔。在一个具体实施例中，该系统包括耦合到出口孔的光束扩展器，该光束扩展器被配置成将处于第二能级的带电粒子束处理成扩展的带电粒子束。该系统包括耦合到光束扩展器的处理室和设置在待植入的处理室内的工件

3. 发明申请

US20080206962A1 METHOD AND STRUCTURE FOR THICK LAYER TRANSFER USING A LINEAR ACCELERATOR 有权
标题翻译：使用线性加速器进行厚层传输的方法和结构
公开(公告)号：US20080206962A1
公开(公告)日：2008-08-28
申请号：US11935197
申请日：2007-11-05
申请人： Francois J. Henley , Albert Lamm , Babak Adibi
发明人： Francois J. Henley , Albert Lamm , Babak Adibi
IPC分类号： H01L21/302 , H01L21/322
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/3221
摘要： A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process.
摘要翻译：使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立厚度的方法。在具体实施例中，本方法包括提供具有表面区域和厚度的半导体衬底。该方法包括使半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该解理区域设置在表面区域下方以限定待分离的材料的厚度，半导体衬底保持在第一温度。在具体实施方案中，该方法包括使半导体衬底的表面区域经受使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成增加裂解区域的应力水平第一压力水平达到第二压力水平。在优选实施例中，半导体衬底保持在高于第一温度的第二温度。该方法使用裂解过程（例如受控的裂解过程）释放可分离材料的厚度。

4. 发明授权

US08124499B2 Method and structure for thick layer transfer using a linear accelerator 有权
标题翻译：使用线性加速器进行厚层转移的方法和结构
公开(公告)号：US08124499B2
公开(公告)日：2012-02-28
申请号：US11935197
申请日：2007-11-05
申请人： Francois J. Henley , Albert Lamm , Babak Adibi
发明人： Francois J. Henley , Albert Lamm , Babak Adibi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/3221
摘要： Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.
摘要翻译：使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立的厚度。提供具有表面区域和厚度的半导体衬底。半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该裂开区域设置在该表面区域的下方以限定厚度的待分离材料，半导体衬底保持在第一温度。半导体衬底的表面区域受到使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成将劈裂区域的应力水平从第一应力水平增加到第二应力水平。

5. 发明申请

US20050150597A1 Apparatus and method for controlled cleaving 审中-公开
标题翻译：用于控制切割的装置和方法
公开(公告)号：US20050150597A1
公开(公告)日：2005-07-14
申请号：US10754980
申请日：2004-01-09
申请人： Francois Henley , Hongbee Teoh , Anthony Paler , Albert Lamm , Philip Ong
发明人： Francois Henley , Hongbee Teoh , Anthony Paler , Albert Lamm , Philip Ong
IPC分类号： B28D5/00 , B32B1/00 , H01L21/00 , H01L21/762
CPC分类号： H01L21/67092 , B28D5/00 , H01L21/76251 , Y10T156/1928
摘要： An apparatus and method for controlled cleaving is presented. Embodiments of the present invention include an apparatus for cleaving a substrate comprising a bottom shell coupled to a hinge mechanism, a top shell coupled to the hinge mechanism, a plurality of o-rings or suction cups coupled to the top and bottom shells for providing a suction force sufficient to exert a tensile force to the top and bottom of a substrate, a compliant member for sealing a portion of a grove edge of a substrate and for maintaining a pressure inside a volume formed between the groove edge and the groove edge of the substrate, a gas port for supplying gas to the volume, and a height adjustment mechanism coupled to the top shell and the bottom shell for separating the top shell from the bottom shell. One embodiment of the invention eliminates the use of gas system and is replaced by a blade edge to initiate propagation and applied tensile force of suction cups to apply tensile forces prior to initiation, control cleave process and maintain layer separation during and after cleaving.
摘要翻译：提出了一种控制劈裂的装置和方法。本发明的实施例包括一种用于切割基底的装置，包括联接到铰链机构的底壳，联接到铰链机构的顶壳，耦合到顶壳和底壳的多个O形圈或吸盘，用于提供足以向基材的顶部和底部施加张力的吸力，用于密封基材的凹槽边缘的一部分并用于保持形成在凹槽边缘和凹槽边缘之间的体积内的压力衬底，用于向体积供应气体的气体端口，以及联接到顶部壳体和底部壳体的高度调节机构，用于将顶部壳体与底部壳体分离。本发明的一个实施例消除了气体系统的使用，并且被叶片边缘替代以启动吸盘的传播和施加的拉力，以在开始之前施加拉伸力，控制裂开过程并且在裂开期间和之后维持层分离。

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