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1. 发明授权

US08200447B2 Measuring apparatus 有权
标题翻译：测量装置
公开(公告)号：US08200447B2
公开(公告)日：2012-06-12
申请号：US13008312
申请日：2011-01-18
申请人： Robert John Wilby , Adrian Kiermasz
发明人： Robert John Wilby , Adrian Kiermasz
IPC分类号： G06F19/00
CPC分类号： G01G19/00
摘要： Measuring apparatus for monitoring the position of the center of mass of a semiconductor wafer is disclosed. The apparatus includes a wafer support (14) with a ledge for supporting an edge of a wafer (2) when it is lifted at a detection point by a probe (16). The probe (16) is connected to a force sensor (18) which senses a force due to a moment of the wafer about a fulcrum (4) on the wafer support (14). Moment measurements are taken at a plurality of detection points and a processing unit calculates the position of the center of mass from the moment measurements. Changes in wafer mass distribution (e.g. due to faulty treatment steps) which cause movement of the center of mass can be detected.
摘要翻译：公开了一种用于监测半导体晶片的质心位置的测量装置。该装置包括具有用于支撑晶片（2）的边缘的凸缘的晶片支撑件（14），当它在探测点处由探针（16）提升时。探针（16）连接到力传感器（18），力传感器（18）感测由于晶片周围的晶片支撑件（14）上的支点（4）的力矩所引起的力。在多个检测点进行力矩测量，并且处理单元从力矩测量中计算质心的位置。可以检测造成质心移动的晶片质量分布的变化（例如由于处理不良步骤）。

2. 发明申请

US20060131271A1 Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate 有权
标题翻译：在等离子体工艺中顺序交替的方法和装置，以便优化衬底
公开(公告)号：US20060131271A1
公开(公告)日：2006-06-22
申请号：US11022983
申请日：2004-12-22
申请人： Adrian Kiermasz , Tamarak Pandhumsoporn , Alferd Cofer
发明人： Adrian Kiermasz , Tamarak Pandhumsoporn , Alferd Cofer
IPC分类号： C23F1/00
CPC分类号： C03C23/006 , C23C4/02 , H01J37/32935 , H01L21/67253
摘要： In a plasma processing system, a method for optimizing etching of a substrate is disclosed. The method includes selecting a first plasma process recipe including a first process variable, wherein changing the first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic. The method also includes selecting second plasma process recipe including a second process variable, wherein changing the second process variable by a second amount aggravates the first substrate etch characteristic and optimizes the second substrate etch characteristic. The method further includes positioning a substrate on a chuck in a plasma processing chamber; and striking a plasma within the plasma processing chamber. The method also includes alternating between the first plasma recipe and the second plasma recipe, wherein upon completion of the alternating, the first substrate etch characteristic and the second substrate etch characteristic are substantially optimized.
摘要翻译：在等离子体处理系统中，公开了一种用于优化衬底蚀刻的方法。该方法包括选择包括第一过程变量的第一等离子体处理配方，其中以第一量改变第一过程变量优化第一衬底蚀刻特性并加重第二衬底蚀刻特性。该方法还包括选择包括第二过程变量的第二等离子体处理配方，其中以第二量改变第二过程变量加剧了第一衬底蚀刻特性并优化了第二衬底蚀刻特性。该方法还包括将基板定位在等离子体处理室中的卡盘上; 并在等离子体处理室内击打等离子体。该方法还包括在第一等离子体配方和第二等离子体配方之间交替，其中在完成交替时，基本上优化了第一衬底蚀刻特性和第二衬底蚀刻特性。

3. 发明申请

US20100147078A1 MEASURING APPARATUS 有权
标题翻译：测量装置
公开(公告)号：US20100147078A1
公开(公告)日：2010-06-17
申请号：US12530498
申请日：2008-03-04
申请人： Robert John Wilby , Adrian Kiermasz
发明人： Robert John Wilby , Adrian Kiermasz
IPC分类号： G01N29/12
CPC分类号： H01L21/67253
摘要： Measuring apparatus and method for monitoring fabrication of a semiconductor wafer by exciting and measuring vibrations of the wafer substrate. A measurable parameter of vibration (e.g. frequency) is indicative of mass of a vibrating region. Mass change caused by wafer treatment is reflected in changes in vibration measurements taken before and after that treatment. The apparatus includes a wafer support e.g. projecting ledge (19), a vibration exciting device e.g. contact probe (28) or pressure differential applicator, and a measurement device e.g. frequency sensor (62).
摘要翻译：通过激发和测量晶片衬底的振动来监测半导体晶片的制造的测量装置和方法。振动的可测量参数（例如频率）表示振动区域的质量。晶片处理引起的质量变化反映在该处理前后振动测量的变化。该装置包括晶片支架，例如突起凸缘（19），振动激励装置接触探针（28）或压差施加器，以及例如测量装置。频率传感器（62）。

4. 发明授权

US07459100B2 Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate 有权
标题翻译：在等离子体工艺中顺序交替的方法和装置，以便优化衬底
公开(公告)号：US07459100B2
公开(公告)日：2008-12-02
申请号：US11022983
申请日：2004-12-22
申请人： Adrian Kiermasz , Tamarak Pandhumsoporn , Alferd Cofer
发明人： Adrian Kiermasz , Tamarak Pandhumsoporn , Alferd Cofer
IPC分类号： C23F1/00
CPC分类号： C03C23/006 , C23C4/02 , H01J37/32935 , H01L21/67253
摘要： In a plasma processing system, a method for optimizing etching of a substrate is disclosed. The method includes selecting a first plasma process recipe including a first process variable, wherein changing the first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic. The method also includes selecting second plasma process recipe including a second process variable, wherein changing the second process variable by a second amount aggravates the first substrate etch characteristic and optimizes the second substrate etch characteristic. The method further includes positioning a substrate on a chuck in a plasma processing chamber; and striking a plasma within the plasma processing chamber. The method also includes alternating between the first plasma recipe and the second plasma recipe, wherein upon completion of the alternating, the first substrate etch characteristic and the second substrate etch characteristic are substantially optimized.
摘要翻译：在等离子体处理系统中，公开了一种用于优化衬底蚀刻的方法。该方法包括选择包括第一过程变量的第一等离子体处理配方，其中以第一量改变第一过程变量优化第一衬底蚀刻特性并加重第二衬底蚀刻特性。该方法还包括选择包括第二过程变量的第二等离子体处理配方，其中以第二量改变第二过程变量加剧了第一衬底蚀刻特性并优化了第二衬底蚀刻特性。该方法还包括将基板定位在等离子体处理室中的卡盘上; 并在等离子体处理室内击打等离子体。该方法还包括在第一等离子体配方和第二等离子体配方之间交替，其中在完成交替时，基本上优化了第一衬底蚀刻特性和第二衬底蚀刻特性。

5. 发明授权

US08200353B2 Measuring apparatus 有权
标题翻译：测量装置
公开(公告)号：US08200353B2
公开(公告)日：2012-06-12
申请号：US12530498
申请日：2008-03-04
申请人： Robert John Wilby , Adrian Kiermasz
发明人： Robert John Wilby , Adrian Kiermasz
IPC分类号： G01N29/00 , G06F19/00
CPC分类号： H01L21/67253
摘要： Measuring apparatus and method for monitoring fabrication of a semiconductor wafer by exciting and measuring vibrations of the wafer substrate. A measurable parameter of vibration (e.g. frequency) is indicative of mass of a vibrating region. Mass change caused by wafer treatment is reflected in changes in vibration measurements taken before and after that treatment. The apparatus includes a wafer support e.g. projecting ledge (19), a vibration exciting device e.g. contact probe (28) or pressure differential applicator, and a measurement device e.g. frequency sensor (62).
摘要翻译：通过激发和测量晶片衬底的振动来监测半导体晶片的制造的测量装置和方法。振动的可测量参数（例如频率）表示振动区域的质量。晶片处理引起的质量变化反映在该处理前后振动测量的变化。该装置包括晶片支架，例如突起凸缘（19），振动激励装置接触探针（28）或压差施加器，以及例如测量装置。频率传感器（62）。

6. 发明授权

US07892863B2 Measuring apparatus 有权
标题翻译：测量装置
公开(公告)号：US07892863B2
公开(公告)日：2011-02-22
申请号：US11868746
申请日：2007-10-08
申请人： Robert John Wilby , Adrian Kiermasz
发明人： Robert John Wilby , Adrian Kiermasz
IPC分类号： H01L21/00
CPC分类号： G01G19/00
摘要： Measuring apparatus for monitoring the position of the center of mass of a semiconductor wafer is disclosed. The apparatus includes a wafer support (14) with a ledge for supporting an edge of a wafer (2) when it is lifted at a detection point by a probe (16). The probe (16) is connected to a force sensor (18) which senses a force due to a moment of the wafer about a fulcrum (4) on the wafer support (14). Moment measurements are taken at a plurality of detection points and a processing unit calculates the position of the center of mass from the moment measurements. Changes in wafer mass distribution (e.g. due to faulty treatment steps) which cause movement of the center of mass can be detected.
摘要翻译：公开了一种用于监测半导体晶片的质心位置的测量装置。该装置包括具有用于支撑晶片（2）的边缘的凸缘的晶片支撑件（14），当它在探测点处由探针（16）提升时。探针（16）连接到力传感器（18），力传感器（18）感测由于晶片周围的晶片支撑件（14）上的支点（4）的力矩所引起的力。在多个检测点进行力矩测量，并且处理单元从力矩测量中计算质心的位置。可以检测造成质心移动的晶片质量分布的变化（例如由于处理不良步骤）。

7. 发明授权

US07018273B1 Platen with diaphragm and method for optimizing wafer polishing 有权
标题翻译：压板和薄膜抛光方法
公开(公告)号：US07018273B1
公开(公告)日：2006-03-28
申请号：US10607613
申请日：2003-06-27
申请人： Adrian Kiermasz , Miguel A. Saldana
发明人： Adrian Kiermasz , Miguel A. Saldana
IPC分类号： B24B1/00
CPC分类号： B24B37/16 , B24B21/10
摘要： A platen is provided for use in a chemical mechanical planarization (CMP) system. The platen is provided with diaphragms that overcome a fluid-conservation problem experienced in prior air-bearing platens. The diaphragms enable a removal profile to be manipulated by configuring one or more diaphragms to control localized polishing pressure while capturing free-flowing fluid that is input to the apparatus. The diaphragms also minimize loss of normally-free-flowing fluid from a fluid-bearing.
摘要翻译：提供了用于化学机械平面化（CMP）系统的压板。压板设有隔膜，克服了现有空气压板中遇到的流体保护问题。通过配置一个或多个隔膜以控制局部抛光压力同时捕获输入到设备的自由流动的流体，隔膜使得能够操纵移除轮廓。隔膜还使来自流体轴承的正常自由流动的流体的损失最小化。

8. 发明申请

US20110190919A1 Method of Controlling Semiconductor Device Fabrication 有权
标题翻译：控制半导体器件制造的方法
公开(公告)号：US20110190919A1
公开(公告)日：2011-08-04
申请号：US12811855
申请日：2009-01-07
申请人： Adrian Kiermasz
发明人： Adrian Kiermasz
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , G05B15/02 , G05B23/024 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer fabrication metrology method in which process steps are characterised by a change in wafer mass, whereby during fabrication mass is used as a measurable parameter to implement statistical process control on the one or more of process steps. In one aspect, the shape of a measured mass distribution is compared with the shape of a predetermined characteristic mass distribution to monitor the process. An determined empirical relationship between a control variable of the process and the characteristic mass change may enable differences between the measured mass distribution and characteristic mass distribution to provide information about the control variable. In another aspect, the relative position of an individual measured wafer mass change in a current distribution provides information about individual wafer problems independently from general process problems.
摘要翻译：一种半导体晶片制造计量方法，其中工艺步骤的特征在于晶片质量的变化，由此在制造期间将质量用作可测量的参数以对一个或多个工艺步骤实施统计过程控制。在一个方面，将测量的质量分布的形状与预定特征质量分布的形状进行比较以监测该过程。过程的控制变量与特征质量变化之间确定的经验关系可以使测量的质量分布和特征质量分布之间的差异能够提供关于控制变量的信息。另一方面，单个测量的晶片质量变化在电流分布中的相对位置提供了关于单个晶片问题的信息，而与一般工艺问题无关。

9. 发明授权

US07086936B1 Linear chemical mechanical planarization (CMP) system and method for planarizing a wafer in a single CMP module 失效
标题翻译：线性化学机械平面化（CMP）系统和在单个CMP模块中平坦化晶片的方法
公开(公告)号：US07086936B1
公开(公告)日：2006-08-08
申请号：US10743923
申请日：2003-12-22
申请人： Adrian Kiermasz
发明人： Adrian Kiermasz
IPC分类号： B24B9/00
CPC分类号： B24B37/26 , B24B21/04
摘要： A linear chemical mechanical planarization (CMP) belt pad includes a first portion comprised of a first pad material, e.g., polyurethane, and a second portion comprised of a second pad material, e.g., porous rubber. The first portion has a first end and a second end. The second portion is situated between the first and second ends of the first portion and extends substantially across a width of the belt pad. Alternatively, the second portion may be embedded in the first portion such that a peripheral surface of the second portion is surrounded by a surface of the first portion. A linear CMP system and a method for planarizing a wafer in a single linear CMP module also are described.
摘要翻译：线性化学机械平坦化（CMP）带垫包括由第一垫材料（例如聚氨酯）组成的第一部分和由第二垫材料（例如多孔橡胶）组成的第二部分。第一部分具有第一端和第二端。第二部分位于第一部分的第一和第二端之间，并且基本上跨过皮带垫的宽度延伸。或者，第二部分可以嵌入在第一部分中，使得第二部分的外围表面被第一部分的表面包围。还描述了线性CMP系统和用于在单个线性CMP模块中平坦化晶片的方法。

10. 发明申请

US20050221730A1 POLISHING PAD CONDITIONING AND POLISHING LIQUID DISPERSAL SYSTEM 失效
标题翻译：抛光垫调理和抛光液体分散系统
公开(公告)号：US20050221730A1
公开(公告)日：2005-10-06
申请号：US10812824
申请日：2004-03-30
申请人： Adrian Kiermasz
发明人： Adrian Kiermasz
IPC分类号： B24B1/00 , B24B21/18 , B24B37/04 , B24B53/007
CPC分类号： B24B53/017 , B24B21/18
摘要： A pad conditioning system for conditioning a polishing pad in conjunction with polishing of a workpiece includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a conditioning surface that is configured to be moved into contact with a polishing pad to condition the polishing pad. The pad conditioning system also includes a polishing liquid supply port disposed in the conditioning surface. The polishing liquid supply port is configured to selectively discharge polishing liquid during the conditioning operation. The discharged polishing liquid is worked into the polishing pad by the pad conditioning head during the conditioning operation. A workpiece, such as a semiconductor wafer, that is also moved into contact with the polishing pad is polished using the discharged polishing liquid.
摘要翻译：用于调整抛光垫并结合工件抛光的垫调节系统包括与定位单元联接的垫调节头。衬垫调节头包括调节表面，该调节表面被配置为移动以与抛光垫接触以调节抛光垫。衬垫调节系统还包括设置在调节表面中的抛光液供给口。抛光液供给口构成为在调理运转时选择性地排出研磨液。排出的抛光液在调节操作期间由垫调节头加工到抛光垫中。使用排出的研磨液对与抛光垫接触的工件（例如半导体晶片）进行研磨。

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