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1. 发明申请

US20080032462A1 Low capacitance two-terminal barrier controlled TVS diodes 有权
标题翻译：低电容两端势垒控制TVS二极管
公开(公告)号：US20080032462A1
公开(公告)日：2008-02-07
申请号：US11879424
申请日：2007-07-17
申请人： Adrian Cogan , Jin Qiu , Richard Blanchard
发明人： Adrian Cogan , Jin Qiu , Richard Blanchard
IPC分类号： H01L21/329
CPC分类号： H01L29/66136 , H01L27/0255 , H01L29/861
摘要： A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.
摘要翻译：两端势垒控制TVS二极管具有消耗区域阻挡阻挡多数载流子流过阴极区附近的沟道区域，该偏压电平低于施加在阳极电极和阴极电极之间的预定钳位电压的偏置电平，并且可布置使得阳极区域在半导体结构的导通期间通过将少数载流子注入沟道区域来提供导电性调制。在目前优选的形式中，多数载流子是电子，而少数载流子是空穴。描述制造方法。

2. 发明申请

US20060131605A1 Low capacitance two-terminal barrier controlled TVS diodes 有权
公开(公告)号：US20060131605A1
公开(公告)日：2006-06-22
申请号：US11020507
申请日：2004-12-22
申请人： Adrian Cogan , Jin Qiu , Richard Blanchard
发明人： Adrian Cogan , Jin Qiu , Richard Blanchard
IPC分类号： H01L29/74 , H01L23/62
CPC分类号： H01L29/66136 , H01L27/0255 , H01L29/861
摘要： A two-terminal barrier controlled TVS diode has a depletion region barrier blocking majority carrier flow through the channel region at the vicinity of the cathode region at bias levels below the predetermined clamping voltage applied between the anode electrode and the cathode electrode, and may be arranged such that the anode region provides conductivity modulation by injecting minority carriers into the channel region during conduction of the semiconductor structure. In presently preferred form the majority carriers are electrons and the minority carriers are holes. Fabrication methods are described.

3. 发明申请

US20050258805A1 Devices and methods for protection of rechargeable elements 审中-公开
标题翻译：用于保护可充电元件的装置和方法
公开(公告)号：US20050258805A1
公开(公告)日：2005-11-24
申请号：US11172708
申请日：2005-07-01
申请人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
发明人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
IPC分类号： H02J7/00 , H01M10/44 , H02H3/20 , H02H7/18 , H02H9/04
CPC分类号： H02J7/0031 , H01L25/16 , H01L2224/48091 , H01L2224/48247 , H01L2924/1301 , H01L2924/13062 , H01L2924/13091 , H01L2924/3011 , H02H7/18 , H02H9/042 , H02J7/0029 , H01L2924/00014 , H01L2924/00
摘要： A protection circuit for use with a charger and a chargeable element, such as a rechargeable lithium ion battery, comprises a shunt regulator having a threshold ON voltage coupled in parallel across the chargeable element, and a temperature-dependent resistor, e.g., a positive temperature coefficient device, coupled in series between the charger and the chargeable element. The temperature dependent resistor is thermally and electrically coupled to the shunt regulator, wherein the first variable resistor limits current flowing through the shunt regulator if the current reaches a predetermined level less than that which would cause failure of the regulator, due to ohmic heating of the regulator.
摘要翻译：用于与充电器和可充电元件（例如可再充电锂离子电池）一起使用的保护电路包括并联稳压器，其具有并联在可充电元件上的阈值导通电压，以及温度依赖电阻器，例如正温度系数装置，串联在充电器和可充电元件之间。温度依赖电阻器被热和电耦合到并联调节器，其中如果电流达到比将导致调节器故障的电流低的预定电平，则第一可变电阻器限制流过分流调节器的电流，这是由于调节器

4. 发明授权

US4816882A Power MOS transistor with equipotential ring 失效
标题翻译：具有等电位环的功率MOS晶体管
公开(公告)号：US4816882A
公开(公告)日：1989-03-28
申请号：US138989
申请日：1987-12-29
申请人： Richard A. Blanchard , Adrian Cogan
发明人： Richard A. Blanchard , Adrian Cogan
IPC分类号： H01L21/28 , H01L21/331 , H01L21/336 , H01L21/60 , H01L29/51 , H01L29/78
CPC分类号： H01L21/28202 , H01L21/76897 , H01L29/513 , H01L29/518 , H01L29/66333 , H01L29/66712 , H01L29/7802 , H01L29/511
摘要： A process for manufacturing a DMOS transistor in accordance with the present invention includes the steps of forming a layer of gate insulation (12, 14) on an N type substrate (10). A layer of polycrystalline silicon (16) is formed on the gate insulation layer. A first mask (18) is used to define the polycrystalline silicon gate. A layer of silicon dioxide (20) is then formed on the polycrystalline silicon gate. A second photolithographic mask (22) is formed on the wafer. The deep body region is then formed. Thereafer, portions of the gate insulation layer not covered by the polycrystalline silicon gate are removed. The P type body region (26) and N+ source region (28) are then formed having a lateral extent defined by the edge of the polycrystalline silicon gate. A conductive layer 30 l is formed on the wafer and photolithographically patterned. A passivation layer 34 is then formed on the wafer. Several types of termination are available, involving various combinations of device perimeter regions, field plates, metallized equipotential rings, and field limiting rings. Of importance, the above-described process uses only 4 photolithographic masking steps.
摘要翻译：根据本发明的制造DMOS晶体管的工艺包括在N型衬底（10）上形成栅极绝缘层（12,14）的步骤。在栅绝缘层上形成多晶硅层（16）。第一掩模（18）用于限定多晶硅栅极。然后在多晶硅栅极上形成一层二氧化硅（20）。第二光刻掩模（22）形成在晶片上。然后形成深体区域。此外，除去未被多晶硅栅极覆盖的栅极绝缘层的部分。然后形成具有由多晶硅栅极的边缘限定的横向范围的P型体区域（26）和N +源极区域（28）。导电层30l形成在晶片上并且光刻图案化。然后在晶片上形成钝化层34。有几种类型的端接可用，涉及器件周边区域，场板，金属化等电位环和场限制环的各种组合。重要的是，上述过程仅使用4个光刻掩模步骤。

5. 发明授权

US06914416B2 Electrical device including a voltage regulator mounted on a variable resistor 有权
标题翻译：电气设备包括安装在可变电阻上的电压调节器
公开(公告)号：US06914416B2
公开(公告)日：2005-07-05
申请号：US10331113
申请日：2002-12-26
申请人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
发明人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
IPC分类号： H02J7/00 , H01M10/44 , H02H3/20 , H02H7/18 , H02H9/04
CPC分类号： H02J7/0031 , H01L25/16 , H01L2224/48091 , H01L2224/48247 , H01L2924/1301 , H01L2924/13062 , H01L2924/13091 , H01L2924/3011 , H02H7/18 , H02H9/042 , H02J7/0029 , H01L2924/00014 , H01L2924/00
摘要： A protection circuit for use with a charger and a chargeable element, such as a rechargeable lithium ion battery, comprises a shunt regulator having a threshold ON voltage coupled in parallel across the chargeable element, and a temperature-dependent resistor, e.g., a positive temperature coefficient device, coupled in series between the charger and the chargeable element. The temperature dependent resistor is thermally and electrically coupled to the shunt regulator, wherein the first variable resistor limits current flowing through the shunt regulator if the current reaches a predetermined level less than that which would cause failure of the regulator, due to ohmic heating of the regulator.
摘要翻译：用于与充电器和可充电元件（例如可再充电锂离子电池）一起使用的保护电路包括并联稳压器，其具有并联在可充电元件上的阈值导通电压，以及温度依赖电阻器，例如正温度系数装置，串联在充电器和可充电元件之间。温度依赖电阻器被热和电耦合到并联调节器，其中如果电流达到比将导致调节器故障的电流低的预定电平，则第一可变电阻器限制流过分流调节器的电流，这是由于调节器

6. 发明申请

US20050275065A1 Diode with improved energy impulse rating 审中-公开
标题翻译：二极管具有改善的能量冲击等级
公开(公告)号：US20050275065A1
公开(公告)日：2005-12-15
申请号：US10868583
申请日：2004-06-14
申请人： Adrian Cogan , Jiyuan Luan , Adrian Mikolajczak
发明人： Adrian Cogan , Jiyuan Luan , Adrian Mikolajczak
IPC分类号： H01L21/00 , H01L21/329 , H01L29/06 , H01L29/861 , H01L29/866
CPC分类号： H01L29/0692 , H01L29/866
摘要： An energy pulse clamping semiconductor diode includes a substrate having carriers of a first type of conductivity in a first, high concentration level (e.g. n++), a first major face and a second major face opposite to the first major face; a layer of semiconductor material having carriers of the first type of conductivity in a second concentration level lower than the first level (e.g. n+), and having an outer surface; a region formed at an outer surface having carriers of a second type of conductivity in a third concentration level (e.g. p+); at least one cell having carriers of the second type of conductivity in a fourth concentration level greater than the third concentration level (e.g. p++); a cathode electrode and an anode electrode. The diode is most preferably included in an overvoltage protection circuit including a PPTC resistor in series with the cathode electrode and thermally coupled to the diode.
摘要翻译：能量脉冲钳位半导体二极管包括具有在第一高浓度水平（例如n ++），第一主面和与第一主面相对的第二主面具有第一类导电性载体的衬底; 具有低于第一水平（例如n +）的第二浓度水平的具有第一类型导电性载流子并具有外表面的半导体材料层; 形成在具有第三浓度水平（例如p +）的第二导电类型的载流子的外表面的区域; 至少一个电池具有大于第三浓度水平的第四浓度水平的第二类导电性载流子（例如p ++）; 阴极电极和阳极电极。二极管最优选地包括在包括与阴极电极串联并且与二极管耦合的PPTC电阻器的过电压保护电路中。

7. 发明授权

US06331763B1 Devices and methods for protection of rechargeable elements 失效
标题翻译：用于保护可充电元件的装置和方法
公开(公告)号：US06331763B1
公开(公告)日：2001-12-18
申请号：US09425519
申请日：1999-10-22
申请人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
发明人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
IPC分类号： H01M1044
CPC分类号： H02J7/0031 , H01L25/16 , H01L2224/48091 , H01L2224/48247 , H01L2924/1301 , H01L2924/13062 , H01L2924/13091 , H01L2924/3011 , H02H7/18 , H02H9/042 , H02J7/0029 , H01L2924/00014 , H01L2924/00
摘要： A protection circuit for use with a charger and a chargeable element, such as a rechargeable lithium ion battery, comprises a shunt regulator having a threshold ON voltage coupled in parallel across the chargeable element, and a temperature-dependent resistor, e.g., a positive temperature coefficient device, coupled in series between the charger and the chargeable element. The temperature dependent resistor is thermally and electrically coupled to the shunt regulator, wherein the first variable resistor limits current flowing through the shunt regulator if the current reaches a predetermined level less than that which would cause failure of the regulator, due to ohmic heating of the regulator.
摘要翻译：用于与充电器和可充电元件（例如可再充电锂离子电池）一起使用的保护电路包括并联稳压器，其具有并联在可充电元件上的阈值导通电压，以及温度依赖电阻器，例如正温度系数装置，串联在充电器和可充电元件之间。温度依赖电阻器被热和电耦合到并联调节器，其中如果电流达到比将导致调节器故障的电流低的预定电平，则第一可变电阻器限制流过分流调节器的电流，这是由于调节器

8. 发明授权

US06518731B2 Devices and methods for protection of rechargeable elements 有权
公开(公告)号：US06518731B2
公开(公告)日：2003-02-11
申请号：US10017931
申请日：2001-10-30
申请人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
发明人： Brian Thomas , Jean-Marc Beaufils , Adrian Cogan , Bernard Dallemange , Gilles Gozlan , Jiyuan Luan , Neill Thornton , James Toth
IPC分类号： H02J700
CPC分类号： H02J7/0031 , H01L25/16 , H01L2224/48091 , H01L2224/48247 , H01L2924/1301 , H01L2924/13062 , H01L2924/13091 , H01L2924/3011 , H02H7/18 , H02H9/042 , H02J7/0029 , H01L2924/00014 , H01L2924/00
摘要： A protection circuit for use with a charger and a chargeable element, such as a rechargeable lithium ion battery, comprises a shunt regulator having a threshold ON voltage coupled in parallel across the chargeable element, and a temperature-dependent resistor, e.g., a positive temperature coefficient device, coupled in series between the charger and the chargeable element. The temperature dependent resistor is thermally and electrically coupled to the shunt regulator, wherein the first variable resistor limits current flowing through the shunt regulator if the current reaches a predetermined level less than that which would cause failure of the regulator, due to ohmic heating of the regulator.

9. 发明授权

US4339690A Energy saving fluorescent lighting system 失效
标题翻译：节能荧光灯照明系统
公开(公告)号：US4339690A
公开(公告)日：1982-07-13
申请号：US174472
申请日：1980-08-01
申请人： Robert J. Regan , Adrian Cogan , Carl F. Buhrer
发明人： Robert J. Regan , Adrian Cogan , Carl F. Buhrer
IPC分类号： H05B41/232 , H05B41/14
CPC分类号： H05B41/2325 , Y10S315/05
摘要： Energy-saving circuitry for a rapid-start fluorescent lighting system includes a reactance-modifying capacitor coupled in series with first and second fluorescent lamps and includes a filament switch which is operative to conduct filament heating current during starting of the first lamp. The filament switch is coupled between filaments at opposite ends of the first fluorescent lamp and triggers to a low impedance state in response to the lamp starting voltage. A capacitor bypass switch can be coupled in parallel with the reactance-modifying capacitor to reduce the impedance of the series circuit during lamp starting.
摘要翻译：用于快速启动荧光照明系统的节能电路包括与第一和第二荧光灯串联耦合的电抗修改电容器，并且包括灯丝开关，其可操作以在第一灯起动期间传导灯丝加热电流。灯丝开关耦合在第一荧光灯的相对端处的灯丝之间，并且响应于灯启动电压触发到低阻抗状态。电容旁路开关可以与电抗修改电容并联耦合，以减少灯启动期间串联电路的阻抗。

10. 发明申请

US20070166942A1 Circuit protection method using diode with improved energy impulse rating 有权
标题翻译：使用改进的能量冲击等级的二极管的电路保护方法
公开(公告)号：US20070166942A1
公开(公告)日：2007-07-19
申请号：US11724907
申请日：2007-03-15
申请人： Adrian Cogan , Jiyuan Luan , Adrian Mikolajczak
发明人： Adrian Cogan , Jiyuan Luan , Adrian Mikolajczak
IPC分类号： H01L21/20
CPC分类号： H01L29/0692 , H01L29/866
摘要： A method for protecting a circuit from a high energy pulse includes placing a PPTC resistive element in series with the circuit and placing an energy pulse clamping semiconductor diode in shunt across the circuit and further includes forming the diode to have: a substrate with carriers of a first type of conductivity in a first, high concentration level (e.g. n++), a first major face and a second major face opposite to the first major face; a layer of semiconductor material having carriers of the first type of conductivity in a second concentration level lower than the first level (e.g. n+), and an outer surface; a region formed at an outer surface having carriers of a second type of conductivity in a third concentration level (e.g. p+); at least one cell having carriers of the second type of conductivity in a fourth concentration level greater than the third concentration level (e.g. p++); and, a cathode electrode and an anode electrode. In the method, the diode region becomes a second-level bi-directional intrinsic conduction region as an intrinsic temperature of the region is approached in response to thermal energy initially generated at the diode cell in response to the high energy electrical pulse. The method includes thermally coupling the diode to the PPTC resistive element to accelerate trip thereof in response to the high energy electrical pulse.
摘要翻译：一种用于保护电路免受高能量脉冲的方法包括将PPTC电阻元件与电路串联放置并且将能量脉冲钳位半导体二极管放置在跨越电路的并联中，还包括形成二极管以具有：具有载流子的衬底在第一高浓度水平（例如n ++），第一主面和与第一主面相对的第二主面的第一类导电性; 具有低于第一水平（例如n +）的第二浓度水平的具有第一类型导电性的载流子的半导体材料层和外表面; 形成在具有第三浓度水平（例如p +）的第二导电类型的载流子的外表面的区域; 至少一个电池具有大于第三浓度水平的第四浓度水平的第二类导电性载流子（例如p ++）; 以及阴极电极和阳极电极。在该方法中，随着响应于高能电脉冲在二极管单元最初产生的热能而接近该区域的本征温度，二极管区域变为二级本征导通区域。该方法包括将二极管热耦合到PPTC电阻元件，以加速其响应于高能电脉冲的跳闸。

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