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    • 3. 发明公开
    • PLASMA PROCESSING APPARATUS
    • Einrichtung zur Plasmabehandlung
    • EP1096554A1
    • 2001-05-02
    • EP99923919.7
    • 1999-06-04
    • TOKYO ELECTRON LIMITEDGoto, NaohisaAndo, Makoto
    • GOTO, NaohisaANDO, MakotoISHII, Nobuo
    • H01L21/3065
    • H01J37/3222H01J37/32192
    • In a plasma processing system, microwaves generated by a microwave generator (86) are guided to a plane antenna (62) to introduce the microwaves, which are attenuated exponentially, into a processing vessel (22) in which an object to be processed (W) is subjected to a plasma process. A microwave absorbing means (96) is disposed in a peripheral portion of the plane antenna (62) to absorb the microwaves propagating from a central portion of the plane antenna and to control the amount of reflected microwave. Thus the amount of the microwaves reflected toward the central portion of the plane antenna (62) by a peripheral portion of the plane antenna (62) is reduced to some extent so that electromagnetic field intensity is distributed uniformly.
    • 在等离子体处理系统中,由微波发生器(86)产生的微波被引导到平面天线(62),以将被指数地衰减的微波引入处理容器(22)中,在该处理容器(22)中,待加工物体(W )进行等离子体处理。 微波吸收装置(96)设置在平面天线(62)的周边部分中,以吸收从平面天线的中心部分传播的微波并控制反射微波的量。 因此,通过平面天线(62)的周边部分朝向平面天线(62)的中心部分反射的微波的量减少到一定程度,使得电磁场强度均匀分布。
    • 5. 发明公开
    • APPARATUS FOR PLASMA PROCESSING
    • 设备用于等离子体处理
    • EP1276356A1
    • 2003-01-15
    • EP01901433.1
    • 2001-01-18
    • TOKYO ELECTRON LIMITEDAndo, MakotoNihon Koshuha Co., Ltd.Yasaka, Yasuyoshi
    • YASAKA, YasuyoshiISHII, Nobuo, c/o Tokyo Electron Ltd.SHINOHARA, Kibatsu, Nihon Koshuha Co., Ltd.
    • H05H1/46H01L21/3065C23C16/50C23F4/00
    • A plasma processing apparatus is provided. The plasma processing apparatus can generate a uniform plasma in a processing container to perform a uniform processing on even a large-diameter wafer. The apparatus includes a processing container 4 shaped to be a cylinder with a bottom and accommodating a mounting table 10 for mounting a wafer W thereon, a silica plate 8 for covering an upper opening of the processing container 4 in an airtight manner, a microwave supplier 50 for supplying a microwave in TE11 mode and a cylindrical waveguide 52 having one end connected to the microwave supplier 50 to extend toward the silica plate 8 and also having an interior waveguide space. The apparatus further includes a radial waveguide box 54 connected to the other end of the cylindrical waveguide 52. The radial waveguide box 54 is shaped to extend from the other end of the cylindrical waveguide 52 radially outward in the form of a flange and successively extend toward a lid body downward as a sidewall to define an interior waveguide space. The apparatus further includes a disc-shaped slot antenna 60 arranged along the silica plate 8 to cover an opening at the lower end of the radial waveguide box 54 and have a plurality of slots 101, a circularly polarized wave converter 56 disposed in the cylindrical waveguide 52 between the microwave supplier 50 and the radial waveguide box 54 to rotate the TE11-mode microwave provided from the supplier 50 about an axis of the cylindrical waveguide 52 and send the rotating microwave to the radial waveguide box 54.
    • 7. 发明公开
    • APPARATUS FOR PLASMA PROCESSING
    • VORRICHTUNG ZUR PLASMAVERARBEITUNG
    • EP1276356A4
    • 2006-01-04
    • EP01901433
    • 2001-01-18
    • TOKYO ELECTRON LTDANDO MAKOTOYASAKA YASUYOSHI
    • YASAKA YASUYOSHIISHII NOBUOSHINOHARA KIBATSU
    • H01J37/32H05H1/46C23C16/50C23F4/00H01L21/3065
    • A plasma device for uniform processing of large-size wafers. The device comprises a processing container (4) that is a bottomed cylinder with an upper opening covered with a quartz plate (8), the cylinder including a processing stage (10) for holding a wafer (W); a microwave device (50) for supplying TE11-mode microwave; a cylindrical waveguide (52) including a waveguide space, connected with the microwave device (50) on one end, and extending toward the quartz plate (8); a radial waveguide box (54) including a waveguide space, connected with the other end of the waveguide (52), spreading radially outward in the shape of a flange, and falling toward the quartz board (8) to serve as a side wall; and a disk-like slot antenna (60) arranged along the quartz board (8) to cover a lower opening of the waveguide box (54). A circular polarization converter (56) can be provided to rotate microwave on the axis of the cylindrical waveguide (52) and send it to the waveguide box (54).
    • 一种等离子体处理装置,其产生均匀的等离子体,从而允许大直径晶片的均匀处理。 圆筒形装置包括晶片安装台,提供密封的石英板,用于以TE11模式传播微波的微波供应器,以及一端连接到微波供应器的圆柱形波导。 径向波导盒连接在圆柱形波导的另一端和石英板之间。 径向波导盒从圆柱形波导径向向外延伸,形成凸缘并限定内部波导空间。 盘状槽天线位于放射状波导箱的下端,位于石英板上方。 设置在圆筒形波导管中的圆偏振波转换器围绕圆柱形波导的轴线旋转TE11模式微波,并将旋转的微波发送到径向波导盒。