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    • 3. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • WO2007066937A1
    • 2007-06-14
    • PCT/KR2006/005173
    • 2006-12-04
    • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEBAEK, In BokLEE, Seong JaeYANG, Jong HeonAHN, Chang GeunYU, Han YoungIM, Ki Ju
    • BAEK, In BokLEE, Seong JaeYANG, Jong HeonAHN, Chang GeunYU, Han YoungIM, Ki Ju
    • H01L21/336
    • H01L29/66439B82Y10/00H01L21/0273H01L21/28123H01L29/66484H01L29/66545H01L29/66575H01L29/66772H01L29/7613H01L29/7831
    • Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.
    • 提供了通过光刻处理改变光致抗蚀剂的特性以形成虚拟结构的半导体器件的制造方法,并且将该结构应用于形成栅电极的工艺。 该方法包括以下步骤:在半导体衬底的顶部上形成缓冲层; 在缓冲层上施加无机光致抗蚀剂,并使用光刻工艺形成光致抗蚀剂图案; 使用预定气体热处理光刻胶图案; 在热处理结构上均匀沉积绝缘层,并通过沉积的厚度蚀刻沉积层,以暴露热处理的光致抗蚀剂图案; 在蚀刻的结构上沉积绝缘层,并蚀刻沉积的绝缘层以暴露经热处理的光致抗蚀剂图案; 使用蚀刻工艺去除曝光的光致抗蚀剂图案; 在除去光致抗蚀剂图案的部分中形成栅氧化层; 以及在所述栅极氧化物层上形成栅电极。 因此,在形成纳米尺寸器件的制造结构时,通过热处理提高了通过光刻工艺形成的层的性质,因此可以容易地形成用于制造各种器件的结构。