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1. 发明专利

JP4373777B2 Piezoelectric device 有权
公开(公告)号：JP4373777B2
公开(公告)日：2009-11-25
申请号：JP2003433017
申请日：2003-12-26
申请人： Jfeミネラル株式会社 , 敏夫小川 , 株式会社富士セラミックス
发明人：敏夫小川
IPC分类号： H01L41/09 , H01L41/08 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/313 , H03H9/17 , H03H9/58 , H04R17/00
CPC分类号： H01L41/094 , H01L41/18 , H03H9/176 , H03H9/585
摘要： The present invention provides a piezoelectric device having an extremely good secular characteristic, which is a unimorph (or bimorph) element obtained by sticking to a metal plate a piezoelectric single crystal having a giant-lateral-effect piezoelectric performance of a lateral-vibration-mode electromechanical coupling factor k 31 not smaller than 70%, the unimorph (or bimorph) element having a bending-vibration-mode electromechanical coupling factor k b not smaller than 50 % (or 60 %). A plate-form single crystal 10 of PZNT or PMNT is brought into a mono-domain in its thickness direction and in its plate surface so as to be provided with the giant-lateral-effect piezoelectric characteristic, and the single crystal 10 that does not cause secular deterioration is stuck to a metal plate 20 (shim plate) while the mono-domain quality is kept as it is, as a result of which a unimorph 1 (or bimorph 2) is fabricated.

2. 发明专利

JP2003282986A Domain control piezoelectric single crystal element and its manufacturing method 有权
标题翻译：领域控制压电单晶元件及其制造方法
公开(公告)号：JP2003282986A
公开(公告)日：2003-10-03
申请号：JP2002083702
申请日：2002-03-25
申请人： Kawatetsu Mining Co Ltd , Toshio Ogawa , 敏夫小川 , 川鉄鉱業株式会社
发明人： OGAWA TOSHIO , MATSUSHITA MITSUYOSHI , TATE YOSHIHITO
IPC分类号： C04B35/46 , C04B35/472 , C30B29/32 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/257
CPC分类号： H01L41/257 , H01L41/1875
摘要： PROBLEM TO BE SOLVED: To provide a domain control piezoelectric single crystal element wherein lateral direction vibration mode (k 31 ) is used in which k 31 is used effectively in the state that d 33 is at least 800 pC/N when k 33 is at least 80%, and -d 31 is at least 1200 pC/N when k 31 is at least 70%, and to provide a domain control piezoelectric single crystal element using a longitudinal vibration mode (k 33 ) of high efficiency and high performance wherein spurious or the like is not present in a band width in which k 33 vibration mode is used in the condition that d 33 is at least 800 pC/N when k 33 is at least 80%, and k 31 is at most 30%. SOLUTION: As a polarization condition in a thickness direction of a piezoelectric single crystal element, a DC electric field of 400-500 V/mm is applied for at most two hours in a temperature range of 20-200°C, or cooling is performed while an electric field is applied (electric field cooling). As a pre-stage of the above process, an electric field is applied to a direction perpendicular to a polarization direction (electric field application), or temperature is increased and decreased by setting a rhomboidal- tetragonal phase boundary temperature or a tetragonal-cubic phase boundary temperature as a center temperature, or temperature is increased and decreased between different two temperatures in a cubic system temperature region (thermal treatment), or these temperature operations are used together. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种域控制压电单晶元件，其中使用其中k SB> 31 的横向振动模式（k 31 ）有效地用于当k <33> 时，d 33 的状态为至少800pC / N，-d SB SB 31为至少1200 当k <31> 时，pC / N为至少70％，并且使用高效率和高的纵向振动模式（k 33 ）提供域控制压电单晶元件在k≤33的条件下，当使用k SB> 33 的条件时，如果k（k）小于800pC / N 33 为至少80％，k SB> 31 为30％以下。解决方案：作为压电单晶元件的厚度方向的极化状态，在20-200℃的温度范围内施加400-500V / mm的DC电场最多2小时，或在施加电场时进行冷却（电场冷却）。作为上述工序的前期，在垂直于偏振方向（电场施加）的方向上施加电场，或者通过设定菱形四边形相边界温度或四方晶相边界温度作为中心温度，或者在立方体系温度区域（热处理）中的温度在不同的两个温度之间升高或降低，或者这些温度操作一起使用。版权所有（C）2004，JPO

3. 发明专利

JP5576679B2 footwear 有权
标题翻译：空值
公开(公告)号：JP5576679B2
公开(公告)日：2014-08-20
申请号：JP2010052623
申请日：2010-03-10
申请人：株式会社プラスコンフォート , 敏夫小川
发明人：敏夫小川
IPC分类号： H02N2/18 , H01L41/113 , H01L41/18 , H01L41/187

4. 发明专利

JP2014055900A Evaluation method for piezoelectric material 有权
标题翻译：压电材料评价方法
公开(公告)号：JP2014055900A
公开(公告)日：2014-03-27
申请号：JP2012201835
申请日：2012-09-13
申请人： Plus Comfort Co Ltd , 株式会社プラスコンフォート , Toshio Ogawa , 敏夫小川
发明人： OGAWA TOSHIO
IPC分类号： G01R29/22 , G01N29/00 , H01L41/22
摘要： PROBLEM TO BE SOLVED: To provide an evaluation method for a piezoelectric material, for evaluating a degree of magnitude of piezoelectric property in a piezoelectric material, in which even at stage before polarization processing, the degree of magnitude of piezoelectric property can be grasped.SOLUTION: An evaluation method for a piezoelectric material includes: a longitudinal wave velocity acquisition step for acquiring a longitudinal wave velocity at the time when a longitudinal wave, which propagates in a thickness direction of a piezoelectric material, propagates through the piezoelectric material; a transversal wave velocity acquisition step for acquiring a transversal wave velocity at the time when a transversal wave, which propagates in the thickness direction of the piezoelectric material, propagates through the piezoelectric material; a ratio calculation step for calculating a ratio between the longitudinal wave velocity and the transversal wave velocity; and an evaluation step for evaluating a degree of a magnitude of a piezoelectric property of the piezoelectric material from the ratio.
摘要翻译：要解决的问题：为了提供压电材料的评价方法，用于评价压电材料中的压电特性的大小的程度，即使在偏振处理之前的阶段，也可以掌握压电特性的大小的程度。压电材料的评价方法包括：纵波速度获取步骤，用于获取在压电材料的厚度方向上传播的纵波通过压电材料传播时的纵波速度; 横向波速度获取步骤，用于获取在压电材料的厚度方向上传播的横波传播通过压电材料时的横波速度; 比率计算步骤，用于计算纵波速度和横波速度之间的比率; 以及评估步骤，用于根据该比率来评估压电材料的压电特性的大小的程度。

5. 发明专利

JP2011188660A Power generation device, indication lamp using the same, and footwear using this indication lamp 有权
标题翻译：发电装置，使用该灯的指示灯和使用本指示灯的脚轮
公开(公告)号：JP2011188660A
公开(公告)日：2011-09-22
申请号：JP2010052623
申请日：2010-03-10
申请人： Toshio Ogawa , Plus Comfort Co Ltd , 敏夫小川 , 株式会社プラスコンフォート
发明人： OGAWA TOSHIO
IPC分类号： H02N2/00 , H01L41/113 , H01L41/18 , H01L41/187
摘要： PROBLEM TO BE SOLVED: To provide a power generation device with which shock is efficiently converted to generate power without destroying a piezoelectric body, to provide an indication lamp using this power generation device, and to provide a footwear using this indication lamp.
SOLUTION: The power generation device includes a piezoelectric diaphragm 11 in which the piezoelectric body 111 is provided in layers, and which is freely bent into a shape approximated to a standing wave in a thickness direction, and a case 12 surrounding the piezoelectric diaphragm. The case includes a pressurized part which is arranged further on an upstream side than the piezoelectric diaphragm, and receives force in a pressurizing direction in which the force is applied toward the piezoelectric diaphragm, and support parts 13 by which, when the piezoelectric diaphragm is bent, portions serving as nodes called in the standing wave are supported so that the central portion of the piezoelectric diaphragm forms an antinode called in the standing wave, the piezoelectric diaphragm being bent in the thickness direction. The piezoelectric diaphragm 11 is disposed by forming a space with the pressurized part in the pressurizing direction.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种在不破坏压电体的情况下有效转换冲击发电的发电装置，使用该发电装置提供指示灯，并使用该指示灯提供鞋类。解决方案：发电装置包括压电体11，其中压电体111设置成层，并且自由地弯曲成与厚度方向上的驻波接近的形状，以及包围压电体的壳体12 隔膜。该壳体包括进一步配置在比压电振动膜更靠上游侧的加压部，并且在朝向压电振动膜施加力的加压方向上受到力，以及支撑部13，当压电振动板弯曲时支撑在驻波中被称为节点的部分，使得压电振动膜的中心部分形成驻波所称的波腹，压电振动膜在厚度方向上弯曲。压电振动板11通过在加压方向上与加压部分形成空间来设置。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP3987744B2 Domain control piezoelectric single crystal element 有权
公开(公告)号：JP3987744B2
公开(公告)日：2007-10-10
申请号：JP2002083702
申请日：2002-03-25
申请人： Jfeミネラル株式会社 , 敏夫小川
发明人：敏夫小川 , 三芳松下 , 義仁舘
IPC分类号： C04B35/46 , H01L41/09 , C04B35/472 , C30B29/32 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/257
CPC分类号： H01L41/257 , H01L41/1875
摘要： Disclosed are a domain controlled piezoelectric single crystal which uses a lateral vibration mode (k31) effectively using an electromechanical coupling factor k31 equal to or greater than 70% and a piezoelectric constant -d31 equal to or greater than 1200 pC/N, with an electromechanical coupling factor k33 equal to or greater than 80% and a piezoelectric constant d33 equal to or greater than 800 pC/N, and a domain controlled piezoelectric single crystal which uses a highly efficient and high-performance longitudinal vibration mode (k33) with k31 equal to or smaller than 30% and without a spurious or the like in the band that uses the k33 vibration mode. A step of applying a DC electric field of 400 V/mm to 1500 V/mm for a maximum of two hours in a temperature range of 20 DEG C to 200 DEG C as polarization conditions in the thickness direction of the piezoelectric single crystal or performing cooling while applying an electric field (field applied cooling) is carried out, or a step of applying an electric field in a direction perpendicular to the polarization direction is performed as a prestage of the first step recited, or a step of heating and cooling a piezoelectric single crystal material with a temperature at the boundary between a rhombohedral crystal and a tetragonal crystal of the piezoelectric single crystal or a temperature at the boundary between the tetragonal crystal and a cubic crystal in between is performed or a heating and cooling step is carried out between two different temperatures of a cubic crystal temperature range (heat treatment), or those steps are used together.

7. 发明专利

JP2005191397A Piezoelectric device 有权
标题翻译：压电器件
公开(公告)号：JP2005191397A
公开(公告)日：2005-07-14
申请号：JP2003433017
申请日：2003-12-26
申请人： Fuji Ceramics:Kk , Jfe Mineral Co Ltd , Jfeミネラル株式会社 , Toshio Ogawa , 敏夫小川 , 株式会社富士セラミックス
发明人： OGAWA TOSHIO
IPC分类号： H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/313 , H03H9/17 , H03H9/58 , H04R17/00
CPC分类号： H01L41/094 , H01L41/18 , H03H9/176 , H03H9/585
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric device having an extremely good aging characteristic which is a uni-morph (or bi-morph) element obtained by sticking a metal plate to a piezoelectric single crystal having the giant-transverse-effect piezoelectric performance of a transverse-vibration-mode electromechanical coupling factor k 31 not smaller than 70 %, and each has a bending-vibration-mode electromechanical coupling factor k b not smaller than 60 % (or 65 %). SOLUTION: A plate-form single crystal 10 of PZNT or PMNT is so brought into a mono-domain in its thickness direction and in its plate surface as to give a giant-transverse-effect piezoelectric characteristic, and the single crystal 10 that does not cause aging degradation is stuck to a metal plate 20 (shim plate) while keeping its mono-domain quality to manufacture a uni-morph 1 (or bi-morph). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有非常好的老化特性的压电装置，其是通过将金属板粘附到具有巨大横向效应的压电单晶而获得的单态（或双变形）元件横向振动模式机电耦合系数k <31>的压电性能不小于70％，并且各自具有弯曲振动模式机电耦合系数k b 不小于超过60％（或65％）。解决方案：将PZNT或PMNT的板状单晶10在其厚度方向和板表面上形成单畴，以产生巨横横向压电特性，单晶10 不会导致老化退化，同时保持其单域质量以制造单态1（或双变型）而粘附在金属板20（垫板）上。版权所有（C）2005，JPO＆NCIPI

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