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    • 6. 发明专利
    • Imaging method with image sensor with broad dynamic range
    • 具有广泛动态范围的图像传感器的成像方法
    • JP2007166609A
    • 2007-06-28
    • JP2006330253
    • 2006-12-07
    • Swatch Group Research & Development Ltdザ スウォッチ グループ リサーチ アンド ディベロップメント リミティド.
    • GENILLOUD LAURENTHECK PASCAL
    • H01L27/146H04N5/355
    • H04N5/35527
    • PROBLEM TO BE SOLVED: To provide an imaging method using an image sensor with a broad dynamic range manufactured by CMOS technologies.
      SOLUTION: A capacitor and a photo-diode are initialized to a first initialization voltage close to a high voltage (VDD) of a power supply by conducting second and third transistors, the second transistor is brought into a non-conducted state, and a first long exposure term of the photo-diode is started. After the end of the first exposure term, the photo-diode is initialized to a second initialization voltage lower than the first initialization voltage by instantaneously bringing a first transistor into a conducted state, and a second short exposure term is started. Voltage levels of the photo-diode are accumulated in the capacitor and read out through fourth and fifth transistors toward the end of the second exposure term.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供使用由CMOS技术制造的具有宽动态范围的图像传感器的成像方法。 解决方案:通过传导第二和第三晶体管,电容器和光电二极管被初始化为接近电源的高电压(VDD)的第一初始化电压,第二晶体管进入非导通状态, 并开始光电二极管的第一长曝光项。 在第一曝光项结束之后,通过瞬间使第一晶体管进入导通状态,光电二极管被初始化为低于第一初始化电压的第二初始化电压,并且开始第二短曝光项。 光电二极管的电压电平累积在电容器中,并通过第四和第五晶体管向第二曝光项的结束读出。 版权所有(C)2007,JPO&INPIT