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1. 发明申请

WO2003046923A1 A METHOD FOR READING A PASSIVE MATRIX-ADDRESSABLE DEVICE AND A DEVICE FOR PERFORMING THE METHOD 审中-公开
标题翻译：用于读取被动矩阵寻址装置的方法和用于执行该方法的装置
公开(公告)号：WO2003046923A1
公开(公告)日：2003-06-05
申请号：PCT/NO2002/000389
申请日：2002-10-29
申请人： THIN FILM ELECTRONICS ASA , BRÖMS, Per , KARLSSON, Christer
发明人： BRÖMS, Per , KARLSSON, Christer
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for reading of a passive matrix-addressable device, particularly a memory device or a sensor device with individually addressable cells of a polarizable material, the cells store data in the form of one of two polarization states +P r ;-P r in each cell, and the polarization states in the cells are written and read by addressing via electrodes which form word and bit lines (WL;BL) in an orthogonal electrode matrix, and wherein the cells are provided in or at the crossings between the word and bit lines (WL;BL) a voltage pulse protocol is used according to which electric potentials on all word and bit lines are controlled coordinated in time. During reading a word line (WL) is activated by applying voltage which relative to the potential on all crossing bit lines (BL) corresponds to the voltage VS and data stored in the cells connected to this active word line (AWL) are determined by detecting the charge values of the cells in a detection means (SA). In a device for performing the method electric potentialson all word and bit lines (WL;BL) are controlled coordinated in time by therewith connected control means which implements the voltage pulse protocol. - Use in passive matrix-addressable memory and sensor devices.
摘要翻译：在用于读取无源矩阵寻址装置，特别是具有可极化材料的单独可寻址单元的存储器件或传感器装置的方法中，电池以每种形式的两种偏振态+ Pr; -Pr之一的形式存储数据并且通过在正交电极矩阵中形成字和位线（WL; BL）的寻址通孔寻址来写入和读取单元中的偏振状态，并且其中单元被提供在字和位之间或之间的交叉处线路（WL; BL）使用电压脉冲协议，根据该电压脉冲协议，所有字线和位线上的电位在时间上被协调控制。在读取期间，通过施加相对于所有交叉位线（BL）上的电位的电压对应于电压VS并且存储在连接到该有源字线（AWL）的单元中的数据）的电压来激活字线（WL）检测装置（SA）中的单元的电荷值。在用于执行该方法的电子装置中，所有字和位线（WL; BL）通过实现电压脉冲协议的连接的控制装置在时间上协调控制。 - 用于无源矩阵寻址存储器和传感器设备。

2. 发明申请

WO2003052831A1 A METHOD FOR FABRICATING HIGH ASPECT RATIO ELECTRODES 审中-公开
标题翻译：一种制备高比例电极的方法
公开(公告)号：WO2003052831A1
公开(公告)日：2003-06-26
申请号：PCT/NO2002/000425
申请日：2002-11-18
申请人： THIN FILM ELECTRONICS ASA , GUDESEN, Hans, Gude
发明人： GUDESEN, Hans, Gude
IPC分类号： H01L29/41
CPC分类号： H01L27/105 , H01L27/1052
摘要： In a method for building high aspect ratio electrodes in an electrode means ( E ) comprising parallel electrodes (ε 1 , ε 2 ) in a dense arrangement, the electrodes are built in a repeatedly performed sequence of successive process steps involving the use of only one and the same photomask in every patterning step, the electrodes being formed with a desired aspect ratio according to the number of times the sequence is repeated, and top surface of the electrode means planarized in a final process step.
摘要翻译：在用于在密集布置中包括平行电极（ε1，ε2）的电极装置（i）中构建高纵横比电极的方法中，电极以重复执行的连续过程序列步骤涉及在每个图案化步骤中仅使用相同的光掩模，电极根据重复序列的次数形成所需的纵横比，并且电极装置的顶表面在最终工艺步骤中被平坦化。

3. 发明申请

WO2005093870A1 AN ORGANIC ELECTRONIC DEVICE AND METHODS FOR MANUFACTURING A DEVICE OF THIS KIND 审中-公开
标题翻译：有机电子设备及其制造方法
公开(公告)号：WO2005093870A1
公开(公告)日：2005-10-06
申请号：PCT/NO2005/000101
申请日：2005-03-21
申请人： THIN FILM ELECTRONICS ASA , SANDBERG, Mats , NORDAL, Per-Erik , GRECZYNSKI, Grzegorz , JOHANSSON, Mats , CARLSEN, Per , GUDESEN, Hans, Gude , GUSTAFSSON, Göran , ANDERSSON, Linda
发明人： SANDBERG, Mats , NORDAL, Per-Erik , GRECZYNSKI, Grzegorz , JOHANSSON, Mats , CARLSEN, Per , GUDESEN, Hans, Gude , GUSTAFSSON, Göran , ANDERSSON, Linda
IPC分类号： H01L51/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , H01L51/0025 , H01L51/0026 , H01L51/0034 , H01L51/0043 , H01L51/005
摘要： An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.
摘要翻译：有机电子器件由夹在电极之间的一种或多种电活性有机或聚合物材料组成。在这种装置中的关键是电极和聚合物之间的界面，其中可能产生对装置的正常功能有害的降解或化学反应产物。这通过引入由一种或多种由含有膦酸酯或磷酸酯官能团的分子骨架组成的材料构成的功能性夹层来解决，直接连接或通过侧链，所述功能层设置在至少一个相应的电极之间，更多的电活性材料在设备中。

4. 发明申请

WO2005106890A1 AN ORGANIC ELECTRONIC CIRCUIT WITH FUNCTIONAL INTERLAYER AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译：一种具有功能中间层的有机电子电路及其制造方法
公开(公告)号：WO2005106890A1
公开(公告)日：2005-11-10
申请号：PCT/NO2005/000136
申请日：2005-04-22
申请人： THIN FILM ELECTRONICS ASA , EDVARDSSON, Niclas , ENGQUIST, Isak , JOHANSSON, Mats
发明人： EDVARDSSON, Niclas , ENGQUIST, Isak , JOHANSSON, Mats
IPC分类号： G11C11/22
CPC分类号： H01L28/40 , G11C11/22
摘要： An organic electronic circuit (C) with improved performance, particularly at elevated temperatures, comprises an organic electret or ferroelectric material (2) provided between a first electrode (la) and a second electrode (lb). A cell with a capacitor-like structure is defined in the organic electret or ferroelectric material (2) and can be accessed electrically directly or indirectly via the electrodes. At least one functional interlayer (3a; 3b) is provided between one of the electrodes (l a; lb) and the organic electret or ferroelectric material (2). The interlayer material is inorganic, non-conducting and substantially inert relative to the organic electret or ferroelectric material (2) in general. Typically the interlayer (3) is inert relative to the organic electret or ferroelectric material (2) particularly when the latter is a fluorine-containing material. A plurality of circuits (C) is used for forming a matrix-addressable array. The interlayer is deposited as molecular species from a source of functional interlayer material without dissociation of individual interlayer molecules.
摘要翻译：具有改进性能的有机电子电路（C），特别是在升高的温度下，包括设置在第一电极（1a）和第二电极（lb）之间的有机驻极体或铁电材料（2）。具有电容器状结构的电池被限定在有机驻极体或铁电材料（2）中，并且可以通过电极直接或间接地访问。在一个电极（1a; 1b）和有机驻极体或铁电材料（2）之间提供至少一个功能性中间层（3a; 3b）。中间层材料通常相对于有机驻极体或铁电材料（2）是无机的，不导电的和基本上是惰性的。通常，中间层（3）相对于有机驻极体或铁电材料（2）是惰性的，特别是当后者是含氟材料时。多个电路（C）用于形成矩阵寻址阵列。中间层作为分子物质从功能性中间层材料源沉积而不分离各层间分子。

5. 发明申请

WO2003044801A1 A FERROELECTRIC OR ELECTRET MEMORY CIRCUIT 审中-公开
标题翻译：电磁或电子存储器电路
公开(公告)号：WO2003044801A1
公开(公告)日：2003-05-30
申请号：PCT/NO2002/000437
申请日：2002-11-22
申请人： THIN FILM ELECTRONICS ASA , GUDESEN, Hans, Gude , NORDAL, Per-Erik
发明人： GUDESEN, Hans, Gude , NORDAL, Per-Erik
IPC分类号： G11C11/22
CPC分类号： H01L27/101 , G11C11/22 , H01L27/11502
摘要： In a ferroelectric or electret memory circuit (C), particularly a ferroelectric or electret memory circuit with improved fatigue resistance, a ferroelectric or electret memory cell, preferably of polymer or oligomer memory material contacting first and second electrodes, at least one of the electrodes comprises at least one functional material capable of physical and/or chemical bulk incorporation of atomic or molecular species contained in the either electrode or the memory material and displaying a propensity for migrating in the form of mobile charged and/or neutral particles between an electrode and a memory material, something which can be detrimental to both. A functional material with the above-mentioned properties shall serve to offset any adverse effect of a migration of this kind, leading to an improvement in the fatigue resistance of the memory cell. Use in a matrix-addressable memory device where the memory cells are formed in distinct portions in a global layer of a ferroelectric or electret thin-film memory material, particularly a polymer material.
摘要翻译：在铁电或驻极体存储器电路（C）中，特别是具有改善的耐疲劳性的铁电或驻极体存储电路，优选与第一和第二电极接触的聚合物或低聚物记忆材料的铁电或驻极体存储单元，至少一个电极包括至少一种功能材料，其能够物理和/或化学地包含在电极或记忆材料中的原子或分子物质并显示在电极和电极之间以移动带电和/或中性粒子的形式迁移的倾向记忆材料，可能对两者都有害的东西。具有上述性能的功能材料应用于抵消这种迁移的任何不利影响，导致记忆单元的耐疲劳性的提高。在矩阵寻址存储器件中使用，其中存储器单元形成在铁电或驻极体薄膜存储器材料，特别是聚合物材料的全局层中的不同部分中。

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