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    • 3. 发明申请
    • MEDICAL DEVICE SYSTEM WITH RELAYING MODULE FOR TREATMENT OF NERVOUS SYSTEM DISORDERS
    • 具有用于治疗神经系统疾病的继电器模块的医疗装置系统
    • WO2004034997A2
    • 2004-04-29
    • PCT/US2003/032867
    • 2003-10-15
    • MEDTRONIC INC.RISE, Mark, T.DONDERS, Adrianus, P.SCHAFFNER, Scott, F.
    • RISE, Mark, T.DONDERS, Adrianus, P.SCHAFFNER, Scott, F.
    • A61K
    • A61N2/00A61N1/08A61N1/32A61N1/36082A61N1/36135A61N1/37229A61N1/37252
    • Apparatus and method facilitates communications between an implanted component and an external component of a medical device system through a relaying module. The medical device system provides treatment to a patient for a nervous system disorder. The relaying module (which may be worn by the patient) provides telemetry channels between the implanted component and the relaying module and between the telemetry module and the external component. With an implantable configuration the implanted component comprises a monitoring element, a treatment therapy unit, an interfacing unit, and a processing unit, and the external component comprises a programmer. With a hybrid configuration the implanted component comprises a monitoring element, a treatment delivery unit, and an interfacing unit, and the external component comprises a processing unit. With an external configuration, the implanted component comprises a monitoring element and a treatment delivery unit, and the external component comprises an interfacing unit and a processing unit.
    • 装置和方法通过中继模块便于植入部件与医疗装置系统的外部部件之间的通信。 医疗装置系统为患者提供神经系统障碍的治疗。 中继模块(可由患者佩戴)提供植入部件和中继模块之间以及遥测模块和外部组件之间的遥测通道。 通过植入式构造,植入部件包括监测元件,治疗治疗单元,接口单元和处理单元,并且外部部件包括程序员。 通过混合配置,植入部件包括监视元件,治疗传递单元和接口单元,并且外部部件包括处理单元。 通过外部配置,植入部件包括监视元件和治疗传递单元,并且外部部件包括接口单元和处理单元。
    • 6. 发明申请
    • INP HETEROJUNCTION BIPOLAR TRANSISTOR WITH INTENTIONALLY COMPRESSIVLEY MISSMATCHED BASE LAYER
    • INP异质双极晶体管,具有明显的压缩基底层
    • WO2002103803A1
    • 2002-12-27
    • PCT/US2002/019383
    • 2002-06-18
    • EPIWORKS, INC.
    • HARTMANN, Quesnell
    • H01L29/737
    • H01L29/7378H01L29/7371
    • A heterojunction bipolar transistor (HBT) having a substrate formed of indium phospide (InP) and having emitter, base and collector layers formed over the substrate such that the base layer is disposed between the emitter and collector layers. The collector layer formed from InGaAs, and the collector layer being doped n-type. The emitter layer formed from InP, and the emitter layer bieng doped n-type. The base layer formed of indium gallium arsenide (InGaAs), the base layer being compressively mismatched, and doped p-type. A lattice mismatch between the substrate and the base material is greater than 0.2%. In an x-ray rocking curve of the heterojunction bipolar transistor, a peak corresponding to the base layer being separated from a peak corresponding to the substrate layer by at least -250 arcseconds. In one embodiment this results from a percentage of indium in the base layer being greater than 54.5%, that is a lattice constant of the base layer is substantially larger than a lattice constant of the substrate throughout an entire base region.
    • 一种异质结双极晶体管(HBT),其具有由磷化铟(InP)形成的衬底并且具有形成在衬底上的发射极,基极和集电极层,使得基极层设置在发射极和集电极层之间。 集电极层由InGaAs形成,集电极层掺杂n型。 由InP形成的发射极层和发射极层双掺杂n型。 由砷化铟镓(InGaAs)形成的基层,基层压缩失配,掺杂p型。 衬底和基底材料之间的晶格失配大于0.2%。 在异质结双极晶体管的x射线摇摆曲线中,对应于基底层的峰与对应于衬底层的峰分开至少-250弧秒。 在一个实施例中,这是由于基底层中的铟的百分比大于54.5%,即基底层的晶格常数基本上大于整个基底区域中的衬底的晶格常数。