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1. 发明申请

WO2007121456A2 WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF 审中-公开
标题翻译：可湿性底漆抗反射涂料组合物及其使用方法
公开(公告)号：WO2007121456A2
公开(公告)日：2007-10-25
申请号：PCT/US2007/066841
申请日：2007-04-18
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHEN, Kuang-jung , KHOJASTEH, Mahmoud , KWONG, Ranee, Wai-Ling , LAWSON, Margaret, C. , LI, Wenjie , PATEL, Kaushal, S. , VARANASI, Pushkara, R.
发明人： CHEN, Kuang-jung , KHOJASTEH, Mahmoud , KWONG, Ranee, Wai-Ling , LAWSON, Margaret, C. , LI, Wenjie , PATEL, Kaushal, S. , VARANASI, Pushkara, R.
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , C08F220/28 , C08F222/40 , C08F232/08 , Y10S430/151
摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.
摘要翻译：本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。抗反射涂料组合物可在含水碱性显影剂中显影。抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。聚合物不包含酸不稳定基团。本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

2. 发明申请

WO2007112432A2 EPITAXY OF SILICON-CARBON SUBSTITUTIONAL SOLID SOLUTIONS BY ULTRA-FAST ANNEALING OF AMORPHOUS MATERIAL 审中-公开
标题翻译：通过超弹性非晶态材料退火的硅碳取代固体溶液外延
公开(公告)号：WO2007112432A2
公开(公告)日：2007-10-04
申请号：PCT/US2007/065324
申请日：2007-03-28
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , LIU, Yaocheng , GLUSCHENKOV, Oleg , RIM, Kern , MADAN, Anita , HOLT, Judson
发明人： LIU, Yaocheng , GLUSCHENKOV, Oleg , RIM, Kern , MADAN, Anita , HOLT, Judson
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02524 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6656 , H01L29/78 , H01L29/7848
摘要： Expitaxial substitutional solid solutions of silicon carbon (101 ) can be obtained by an ultra-fast anneal of an amorphous carbon-containing silicon material. The anneal is performed at a temperature above the recrystallization point, but below the melting point of the material and preferably lasts for less than 100 milliseconds in this temperature regime. The anneal is preferably a flash anneal or laser anneal. This approach is able to produce epitaxial silicon and carbon-containing materials (101 ) with a substantial portion of the carbon atoms at substitutional lattice positions. The approach is especially useful in CMOS processes and other electronic device manufacture where the presence of epitaxial Si 1-y C y , y
摘要翻译：可以通过非晶态含碳硅材料的超快速退火获得硅碳（101）的外延替代固溶体。退火在高于再结晶点的温度下进行，但低于材料的熔点，并且在该温度范围内优选持续小于100毫秒。退火优选是闪光退火或激光退火。该方法能够产生具有替代晶格位置的大部分碳原子的外延硅和含碳材料（101）。该方法在CMOS工艺和其它电子器件制造中特别有用，其中外延Si 1-y C y y y的存在y <0.1是应变工程或带隙工程所需的。

3. 发明申请

WO2005088393A1 USE OF MIXED BASES TO ENHANCE PATTERNED RESIST PROFILES ON CHROME OR SENSITIVE SUBSTRATES 审中-公开
标题翻译：混合基础的使用以加强对铬或敏感基板上的图案耐腐蚀型材
公开(公告)号：WO2005088393A1
公开(公告)日：2005-09-22
申请号：PCT/US2004/004144
申请日：2004-02-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , MOREAU, Wayne, M. , ANGELOPOULOS, Marie , HUANG, Wu-Song , MEDEIROS, David, R. , PETRILLO, Karen, E.
发明人： MOREAU, Wayne, M. , ANGELOPOULOS, Marie , HUANG, Wu-Song , MEDEIROS, David, R. , PETRILLO, Karen, E.
IPC分类号： G03C1/73
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译：通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。

4. 发明申请

WO2004007192A1 ANTIREFLECTIVE SILICON-CONTAINING COMPOSITIONS AS HARDMASK LAYER 审中-公开
标题翻译：作为硬质合金层的抗反射含硅组合物
公开(公告)号：WO2004007192A1
公开(公告)日：2004-01-22
申请号：PCT/US2002/022176
申请日：2002-07-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： ANGELOPOULOS, Marie , ARIRAM, Ari , GUARNIERI, C., Richard , HUANG, Wu-Song , KWONG, Ranee , MOREAU, Wayne, M.
IPC分类号： B32B09/04
CPC分类号： C08G77/20 , C08G77/38 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译：特征在于存在具有侧生发色团部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

5. 发明申请

WO2009091704A3 AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME 审中-公开
公开(公告)号：WO2009091704A3
公开(公告)日：2009-07-23
申请号：PCT/US2009/030792
申请日：2009-01-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , LI, Wenjie , HUANG, Wu-song, S. , VARANASI, Pushkara, R. , LIU, Sen , POPOVA, Irene, Y.
发明人： LI, Wenjie , HUANG, Wu-song, S. , VARANASI, Pushkara, R. , LIU, Sen , POPOVA, Irene, Y.
IPC分类号： G03F7/004 , G03F7/26 , C07C317/14
摘要： Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.

6. 发明申请

WO2006096221A1 LOW REFRACTIVE INDEX POLYMERS AS UNDERLAYERS FOR SILICON-CONTAINING PHOTORESISTS 审中-公开
标题翻译：低折射率聚合物作为含硅光电子器件的底层
公开(公告)号：WO2006096221A1
公开(公告)日：2006-09-14
申请号：PCT/US2005/043210
申请日：2005-11-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HUANG, Wu-song , BURNS, Sean , KHOJASTEH, Mahmoud
发明人： HUANG, Wu-song , BURNS, Sean , KHOJASTEH, Mahmoud
IPC分类号： G03C1/76
CPC分类号： G03F7/094 , G03F7/091
摘要： A new underlayer composition that exhibits high etch resistance and improved optical properties is disclosed. The underlayer composition comprises a vinyl or acrylate polymer, such as a methacrylate polymer, the polymer comprising at least one substituted or unsubstituted naphthalene or naphthol moiety, including mixtures thereof. Examples of the polymer of this invention include: formula (I), (II), (III), (IV), where each R 1 is independently selected from an organic moiety or a halogen; each A is independently a single bond or an organic moietry; R 2 is hydrogen or a methyl group; and each X, Y and Z is an integer of 0 to 7, and Y+Z is / or less. The organic moiety mentioned above may be a substituted or unsubtituted hydrocarbon selected from the group consisting of a linear or branched alkyl, halogenated linear or branched alkyl, aryl, halogenated aryl, cyclic alkyl, and halogenated cyclic alkyl, and any combination thereof. The compositions are suitable for use as planarizing underlayer in a multilayer lithographic process, including a trilayer lothographic process.
摘要翻译：公开了具有高耐蚀刻性和改善的光学性能的新型底层组合物。底层组合物包含乙烯基或丙烯酸酯聚合物，例如甲基丙烯酸酯聚合物，该聚合物包含至少一个取代或未取代的萘或萘酚部分，包括其混合物。本发明的聚合物的实例包括：式（I），（II），（III），（IV），其中每个R 1独立地选自有机部分或卤素; 每个A独立地是单键或有机溶剂; R 2是氢或甲基; 并且每个X，Y和Z为0至7的整数，Y + Z为/或更小。上述有机部分可以是选自直链或支链烷基，卤代直链或支链烷基，芳基，卤代芳基，环状烷基和卤代环状烷基的取代或未取代的烃及其任何组合。该组合物适用于在多层平版印刷工艺中的平面化底层，包括三层薄膜工艺。

7. 发明申请

WO2003089992A1 ANTIREFLECTIVE SIO-CONTAINING COMPOSITIONS FOR HARDMASK LAYER 审中-公开
标题翻译： HARDMASK层的抗反应性含氧组合物
公开(公告)号：WO2003089992A1
公开(公告)日：2003-10-30
申请号：PCT/US2003/010590
申请日：2003-04-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： PFEIFFER, Dirk , ANGELOPOULOS, Marie , BABICH, Katherina , BROCK, Phillip , HUANG, Wu-Song , MAHOROWALA, Arpan, P. , MEDEIROS, David, R. , SOORIYAKUMARAN, Ratnam
IPC分类号： G03F7/00
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantagously useful with shorter wavelenght lithographic processes and/or have minimal residual acid content.
摘要翻译：存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。本发明的组合物在较短的波长光刻工艺和/或具有最小的残留酸含量方面是有利的。

8. 发明申请

WO2009091702A1 FLUORINE-FREE HETERAROMATIC PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME 审中-公开
标题翻译：无氟无机光电发生器和含有它们的光电组合物
公开(公告)号：WO2009091702A1
公开(公告)日：2009-07-23
申请号：PCT/US2009/030789
申请日：2009-01-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORTION , LIU, Sen , VARANASI, Pushkara, R.
发明人： LIU, Sen , VARANASI, Pushkara, R.
IPC分类号： C07C309/02 , C07C309/24
CPC分类号： C07D333/32 , G03F7/0045 , G03F7/0397 , Y10S430/122 , Y10S430/123
摘要： Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free heteroaromatic sulfonate anionic component. The photoacid generators preferably contain an onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.
摘要翻译：含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。光酸产生剂的特征在于存在无氟杂芳族磺酸盐阴离子组分。光酸产生剂优选含有阳离子阳离子成分，更优选含有阳离子成分的锍。光致抗蚀剂组合物优选含有酸敏感成像聚合物。组合物特别适用于使用193nm（ArF）成像辐射形成材料图案。

9. 发明申请

WO2008055137A2 SI-CONTAINING POLYMERS FOR NANO-PATTERN DEVICE FABRICATION 审中-公开
标题翻译：用于纳米图案装置制造的含SI聚合物
公开(公告)号：WO2008055137A2
公开(公告)日：2008-05-08
申请号：PCT/US2007/082967
申请日：2007-10-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHEN, Kuang-Jung , HUANG, Wu-Song , LI, Wai-Kin , LIN, Yi-Hsiung, S.
发明人： CHEN, Kuang-Jung , HUANG, Wu-Song , LI, Wai-Kin , LIN, Yi-Hsiung, S.
IPC分类号： G03C1/00
CPC分类号： G03F7/0758 , G03F7/0045
摘要： A resist polymer (22) that has nano-scale patterns of sub-lithographic openings (26) located therein that are oriented substantially perpendicular to its major surfaces is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material (12). After the transferring of the nano-scale patterns into the substrate, nano-scale openings having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
摘要翻译：提供了具有位于其中的基本上垂直于其主表面定向的亚光刻开口（26）的纳米尺度图案的抗蚀剂聚合物（22）。具有纳米尺度图案的这种抗蚀剂聚合物用作将纳米尺度图案转移到诸如介电材料（12）的下面的基底的蚀刻掩模。在将纳米尺度图案转移到基底中之后，在基底中产生宽度小于50nm的纳米级开口。电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。根据本发明的一个方面，本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B）的共聚物，其中所述两个单体单元（A和B）具有不同的蚀刻速率。

10. 发明申请

WO2007090077A3 SYSTEM FOR DISPATCHING SEMICONDUCTORS LOTS 审中-公开
公开(公告)号：WO2007090077A3
公开(公告)日：2007-08-09
申请号：PCT/US2007/061207
申请日：2007-01-29
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , DICKSTEIN, Eric , DZIEDZIC, Alan , BURDA, Richard
发明人： DICKSTEIN, Eric , DZIEDZIC, Alan , BURDA, Richard
IPC分类号： G06F19/00 , G05B13/00
摘要： A system (110) for dispatching a plurality of semiconductor lots (155, 160) among a plurality of tools is provided. The system includes a dispatch server manager (120) and a dispatch integrator and display device (110). The dispatch integrator and display device conveys a dispatch request (115) to the manager and receives a dispatch list (125) from the manager. The manager queries for a processing status of the plurality of semiconductor lots and displays a dispatch list in response to the processing status. The dispatch list includes an associated reason and/or code (180) related to the processing status.

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