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1. 发明授权

US07397280B2 High-voltage tolerant power-rail ESD clamp circuit for mixed-voltage I/O interface 有权
标题翻译：用于混合电压I / O接口的高耐压电源轨ESD钳位电路
公开(公告)号：US07397280B2
公开(公告)日：2008-07-08
申请号：US11366143
申请日：2006-03-02
申请人： Ming-Dou Ker , Wen-Yi Chen , Che-Hao Chuang
发明人： Ming-Dou Ker , Wen-Yi Chen , Che-Hao Chuang
IPC分类号： H03K19/0175
CPC分类号： H01L27/0266
摘要： A circuit for electrostatic discharge (ESD) protection includes a resistor a capacitor connected in series with the resistor, a first transistor including a gate, the gate being connected to a first power supply providing a first voltage to the gate via the resistor and a first terminal connected to the first power supply, a second transistor including a gate, the gate being connected to a second power supply, the second power supply providing a second voltage smaller than the first voltage, the second transistor having a first terminal connected to a second terminal of the first transistor, and a third transistor including a gate, the gate being connected to the second power supply, a first terminal of the third transistor being connected to a second terminal of the second transistor, and a second terminal being connected to a reference voltage different from the first voltage and the second voltage.
摘要翻译：用于静电放电（ESD）保护的电路包括电阻器，与电阻器串联连接的电容器，包括栅极的第一晶体管，栅极连接到第一电源，通过电阻向栅极提供第一电压，第一端子连接到第一电源，第二晶体管包括栅极，栅极连接到第二电源，第二电源提供小于第一电压的第二电压，第二晶体管具有连接到第二电源的第一端子第一晶体管的端子和包括栅极的第三晶体管，栅极连接到第二电源，第三晶体管的第一端子连接到第二晶体管的第二端子，第二端子连接到第二晶体管，参考电压不同于第一电压和第二电压。

2. 发明授权

US07400536B1 Memory system and a voltage regulator 有权
标题翻译：内存系统和电压调节器
公开(公告)号：US07400536B1
公开(公告)日：2008-07-15
申请号：US11693712
申请日：2007-03-30
申请人： Yufe Feng Lin , Yi-Chun Shih , Kuen-Long Chang
发明人： Yufe Feng Lin , Yi-Chun Shih , Kuen-Long Chang
IPC分类号： G11C11/34
CPC分类号： G11C5/147
摘要： A regulator for regulating a program voltage of a memory device is introduced. The regulator includes an operating amplifier, a program path emulation apparatus, and a current mirror coupled to the program path emulation apparatus and the operating amplifier. The current mirror is for controlling a current flowing in the program path emulation apparatus a multiple of a predetermined current. The program path emulation apparatus includes a bit line selection emulation unit for emulating a bit line selecting unit of the memory device, a path resistor for emulating a program path of a memory cell of the memory device, and a sector selection emulation unit for emulating a sector selecting unit of the memory device. The value of the predetermined current may be varied according to the program times of the memory cells of the memory device.
摘要翻译：引入了用于调节存储器件的编程电压的调节器。调节器包括运算放大器，程序路径仿真装置和耦合到程序路径仿真装置和运算放大器的电流镜。电流镜用于控制在程序路径仿真装置中流过预定电流倍数的电流。程序路径仿真装置包括用于仿真存储器件的位线选择单元的位线选择仿真单元，用于仿真存储器件的存储单元的程序路径的路径电阻器和用于模拟存储器件的扇区选择仿真单元存储器件的扇区选择单元。预定电流的值可以根据存储器件的存储器单元的编程时间而改变。

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