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    • 7. 发明申请
    • CHEMICAL-AMPLIFICATION POSITIVE-WORKING PHOTORESIST COMPOSITION
    • 化学放大正极工作光电组合物
    • WO2004040377A1
    • 2004-05-13
    • PCT/JP2003/013723
    • 2003-10-27
    • TOKYO OHKA KOGYO CO., LTD.NITTA, KazuyukiMOTOIKE, Naoto
    • NITTA, KazuyukiMOTOIKE, Naoto
    • G03F7/039
    • G03F7/0392
    • Disclosed is a chemical-amplification positive-working photoresist composition having compliability to various types of resist patterns with excellent sensitivity and pattern resolution exhibiting high exposure margin and focusing depth latitude. Of the essential components including (A) a resin capable of being imparted with increased alkali-solubility by interacting with an acid and (B) an acid-generating compound, the component (A) is a combination of (a1) a first resin and (a2) a second resin each as a hydroxystyrene-based copolymeric resin partially substituted for the hydroxyl hydrogen atoms with acid-dissociable solubility-reducing substituent groups. Characteristically, in addition to the difference in the mass-average molecular weight being high for (a1) and low for (a2), the acid-dissociability of the substituents in the (a1) resin is higher than that in the (a2) resin as in a combination of 1-ethoxyethyl for (a1) and tetrahydropyranyl for (a2).
    • 公开了一种化学扩增正性光致抗蚀剂组合物,其具有对具有优异的灵敏度和图案分辨率的各种类型的抗蚀剂图案具有高曝光余量和聚焦深度纬度的适应性。 在包括(A)能够通过与酸相互作用而赋予碱溶解性的树脂和(B)产酸化合物的基础组分中,组分(A)是(a1)第一树脂和 (a2)第二树脂,各自作为部分被羟基氢原子取代的具有酸解离性溶解性降低取代基的羟基苯乙烯类共聚树脂。 特别地,除了(a1)的质量平均分子量的差异和(a2)的低分子量之外,(a1)树脂中的取代基的酸解离性高于(a2)树脂 如(a1)的1-乙氧基乙基和(a2)的四氢吡喃基的组合。