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    • 1. 发明申请
    • METHODS AND SYSTEMS FOR CONTROLLING CRITICAL DIMENSIONS IN TRACK LITHOGRAPHY TOOLS
    • 用于控制轨迹切削工具中关键尺寸的方法和系统
    • WO2008019362A2
    • 2008-02-14
    • PCT/US2007/075344
    • 2007-08-07
    • SOKUDO CO., LTD.MICHAELSON, TimBEKIARIS, Nikolaos
    • MICHAELSON, TimBEKIARIS, Nikolaos
    • B05C11/00H01L21/66
    • H01L22/20H01L22/12
    • A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer. The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map. The multi-zone heater includes a plurality of heater zones. The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone. The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer and modifying a temperature of the first heater zone based, in part, on the temperature variation.
    • 控制轨道光刻工具上的晶片临界尺寸(CD)均匀性的方法包括获得晶片的CD图。 CD映射包括与多区加热器几何图相关的多个CD数据点。 多区加热器包括多个加热区。 该方法还包括基于CD数据点中的一个或多个来确定多个加热器区域中的第一加热器区域的CD值,并且计算所确定的第一加热器区域的CD值与用于第一加热器区域的目标CD值之间的差值 第一加热区。 该方法还包括:部分地基于计算出的差异和沉积在晶片上的光致抗蚀剂的温度敏感度来确定第一加热器区域的温度变化,并且部分地基于温度改变第一加热器区域的温度 变异。
    • 6. 发明申请
    • ZONE CONTROL HEATER PLATE FOR TRACK LITHOGRAPHY SYSTEMS
    • 用于轨道光刻系统的区域控制加热板
    • WO2008005871A2
    • 2008-01-10
    • PCT/US2007072543
    • 2007-06-29
    • SOKUDO CO LTDSALINAS MARTIN JEFFQUACH DAVID H
    • SALINAS MARTIN JEFFQUACH DAVID H
    • H05B3/68
    • H05B3/143H01L21/67103H01L21/67248
    • A substrate heater comprising a bake plate having an upper surface, a lower surface and a peripheral side surface extending between the upper and lower surfaces, the bake plate including at least one heating element, at least one temperature sensor and a plurality of wires including at least one wire coupled to the heating element and at least one wire coupled to the temperature sensor; a shield spaced apart from and generally surrounding the lower and peripheral side surfaces of the bake plate, the shield having an interior upper surface facing the lower surface of the bake plate, an interior side surface facing the peripheral side surface of the bake plate and a lower surface opposite the interior upper surface; a patterned signal layer formed on the lower surface of the shield, wherein the plurality of wires are electrically coupled to a corresponding plurality of signal traces formed in the patterned signal layer; and a connector, electrically coupled to the plurality of signal traces in the patterned signal layer, adapted to facilitate electrical connections to the plurality of wires.
    • 一种基板加热器,包括具有上表面,下表面和在上表面和下表面之间延伸的周边表面的烘烤板,所述烘烤板包括至少一个加热元件,至少一个温度传感器和多个包括在 耦合到所述加热元件的至少一个线和耦合到所述温度传感器的至少一个线; 与烘烤板的下部和外周侧表面间隔开并且通常围绕烘烤板的下部和外周侧表面的护罩,所述护罩具有面向烘烤板的下表面的内部上表面,面向烘烤板的周边侧表面的内侧表面和 下表面与内部上表面相对; 形成在所述屏蔽的下表面上的图案化信号层,其中所述多个导线电耦合到形成在所述图案化信号层中的对应的多个信号迹线; 以及电连接到所述图案化信号层中的所述多个信号迹线的连接器,适于促进与所述多根电线的电连接。
    • 7. 发明申请
    • CONTROLLING CRITICAL DIMENSIONS IN TRACK LITHOGRAPHY TOOLS
    • 控制跟踪算术工具中的关键尺寸
    • WO2008019362A3
    • 2008-10-16
    • PCT/US2007075344
    • 2007-08-07
    • SOKUDO CO LTDMICHAELSON TIMBEKIARIS NIKOLAOS
    • MICHAELSON TIMBEKIARIS NIKOLAOS
    • H01L21/00G01R31/26G06F19/00H01L21/66H05B3/68
    • H01L22/20H01L22/12
    • A method of controlling wafer critical dimension (CD) uniformity on a track lithography tool includes obtaining a CD map for a wafer (432) The CD map includes a plurality of CD data points correlated with a multi-zone heater geometry map (434) The multi-zone heater includes a plurality of heater zones The method also includes determining a CD value for a first heater zone of the plurality of heater zones based on one or more of the CD data points and computing a difference between the determined CD value for the first heater zone and a target CD value for the first heater zone (438) The method further includes determining a temperature variation for the first heater zone based, in part, on the computed difference and a temperature sensitivity of a photoresist deposited on the wafer an modifying a temperature of the first heater zone based, in part, on the temperature variation (440)
    • 控制轨道光刻工具上的晶片临界尺寸(CD)均匀性的方法包括获得晶片的CD映射(432).CD图包括与多区加热器几何图相关的多个CD数据点。 多区加热器包括多个加热器区域。该方法还包括基于一个或多个CD数据点确定多个加热器区域中的第一加热器区域的CD值,并计算所确定的CD值 第一加热器区域和用于第一加热器区域(438)的目标CD值。该方法还包括部分地基于计算出的差异和沉积在晶片上的光致抗蚀剂的温度敏感度来确定第一加热器区域的温度变化 部分地基于温度变化(440)改变第一加热器区域的温度,
    • 10. 发明申请
    • MULTI-CHANNEL DEVELOPER SYSTEM
    • 多通道开发系统
    • WO2010068597A1
    • 2010-06-17
    • PCT/US2009/067038
    • 2009-12-07
    • SOKUDO CO., LTD.BRITCHER, Eric B.RABINOVICH, YevgeniySHERMAN, SvetlanaOTANI, Masami
    • BRITCHER, Eric B.RABINOVICH, YevgeniySHERMAN, SvetlanaOTANI, Masami
    • H01L21/66B05C11/00
    • H01L21/6719G03F7/162H01L21/67051H01L21/68771Y10T29/41
    • An apparatus for dispensing fluid during semiconductor substrate processing operations comprises an enclosure having a first side and a second side. The enclosure comprises a first processing station and a second processing station. The second processing station is positioned adjacent to the first processing station. In addition, the substrate processing apparatus includes a first dispense arm configured to deliver a fluid to the first processing station wherein the first dispense arm is positioned between the first side and the first processing station and a second dispense arm configured to deliver the fluid to the second processing station wherein the second dispense arm is positioned between the second side and the second processing station. The substrate processing apparatus also comprises a first rinse arm configured to deliver a rinsing fluid to the first processing station and a second rinse arm configured to deliver the rinsing fluid to the second processing station.
    • 在半导体衬底处理操作期间用于分配流体的设备包括具有第一侧和第二侧的外壳。 外壳包括第一处理站和第二处理站。 第二处理站位于第一处理站附近。 此外,基板处理装置包括:第一分配臂,被配置为将流体输送到第一处理站,其中第一分配臂位于第一侧和第一处理站之间,第二分配臂被配置为将流体输送到 第二处理站,其中第二分配臂位于第二侧和第二处理站之间。 衬底处理设备还包括构造成将冲洗流体输送到第一处理站的第一冲洗臂和被构造成将冲洗流体输送到第二处理站的第二冲洗臂。