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1. 发明专利

JP2006229198A Method and apparatus for cleaning tool with ultraviolet provided internally 审中-公开
标题翻译：用于内部提供超紫外线清洁工具的方法和装置
公开(公告)号：JP2006229198A
公开(公告)日：2006-08-31
申请号：JP2005363934
申请日：2005-12-16
申请人： Asahi Glass Co Ltd , Sematech Inc , セマテックインコーポレテッドSEMATECH, Inc. , 旭硝子株式会社
发明人： IKUTA YORISUKE , RASTEGAR ABBAS
IPC分类号： H01L21/304 , B08B3/02 , B08B7/00 , H01L21/027
CPC分类号： B08B3/10 , B05D3/062 , B08B7/0057 , H01L21/67051 , H01L21/67115
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for removing particles equal to or less than 100 nm in size from the surface including a silicon wafer, a photomask substrate, photomask blanks, etc.
SOLUTION: The ultraviolet cleaning tool has an ultraviolet source arranged in a processing chamber, which can be located above a surface 104 and used during various processing in the processing chamber. The distance between the surface 104 of a glass substrate, a glass surface, a silicon substrate, a plate, a photomask substrate, etc., and the ultraviolet source 102 can be adjusted by moving a rotary chuck 106 using a motor 110. Alternatively, the distance can also be adjusted by moving the ultraviolet source 102 vertically. The ultraviolet source 102 has a wavelength of about 140 to 400 nm and its intensity is equal to or greater than 1 mV/cm
2 , and a high or a low pressure mercury lamp, etc., is used. The ultraviolet source 102 causes ozone that breaks the chemical bond between the particles and the surface 104 to occur, improving the cleaning performance.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种从包括硅晶片，光掩模基板，光掩模坯料等的表面去除等于或小于100nm的颗粒的装置和方法。解决方案：紫外线清洁工具具有布置在处理室中的紫外线源，该处理室可以位于表面104的上方，并且在处理室中的各种处理期间使用。可以通过使用马达110移动旋转卡盘106来调整玻璃基板的表面104，玻璃表面，硅基板，板，光掩模基板等之间的距离和紫外线源102。也可以通过垂直移动紫外线源102来调节距离。紫外线源102具有约140至400nm的波长，其强度等于或大于1mV / cm 2，使用高压或低压汞灯等。紫外线源102引起破坏颗粒与表面104之间的化学键的臭氧，从而提高清洁性能。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2013177679A Method for cleaning shield surface in deposition system 审中-公开
标题翻译：沉积系统中清洁表面的方法
公开(公告)号：JP2013177679A
公开(公告)日：2013-09-09
申请号：JP2013018302
申请日：2013-02-01
申请人： Sematech Inc , セマテック・インコーポレイテッド , Asahi Glass Co Ltd , 旭硝子株式会社
发明人： JINDAL VIBHU , KAGEYAMA JUNICHI
IPC分类号： C23G5/00 , C23C14/00 , C23F1/00 , C23F1/28 , C23F1/40 , C23G1/08 , C23G1/19 , G03F1/24 , H01L21/027 , H05H1/46
CPC分类号： G03F1/22 , B08B7/04 , B82Y10/00 , B82Y40/00 , C23C14/34 , C23C14/564 , G03F1/60
摘要： PROBLEM TO BE SOLVED: To disclose a method for cleaning and recovering a deposition shield surface and a method for using the shield.SOLUTION: This method results in a cleaned shield having surface roughness of about 200-500 microinch, particle surface density of less than about 0.1 particle/mmwith a size of about 1-5 micron, and no particle with a size of less than about 1 micron.
摘要翻译：要解决的问题：公开一种用于清洗和回收沉积屏蔽表面的方法和使用该屏蔽的方法。解决方案：该方法产生具有约200-500微英寸的表面粗糙度的清洁屏蔽，颗粒表面密度小于约0.1微米/毫米，尺寸约为1-5微米，不含大小小于约1微米的颗粒。

3. 发明专利

JP2013174012A Coating of shield surface in deposition system 审中-公开
标题翻译：沉积系统中的表面涂层
公开(公告)号：JP2013174012A
公开(公告)日：2013-09-05
申请号：JP2013018301
申请日：2013-02-01
申请人： Sematech Inc , セマテック・インコーポレイテッド , Asahi Glass Co Ltd , 旭硝子株式会社
发明人： JINDAL VIBHU , KAGEYAMA JUNICHI
IPC分类号： C23G1/08 , B08B3/02 , B08B3/08 , C23C14/00 , C23G1/19 , G03F1/24 , H01L21/027
CPC分类号： C23C14/564 , B82Y10/00 , B82Y40/00 , C23C14/34 , C23C14/35 , G03F1/22 , G03F1/60
摘要： PROBLEM TO BE SOLVED: To disclose a deposition chamber shield and a method for manufacturing the same.SOLUTION: A deposition chamber shield includes a stainless steel coating with a thickness of from about 100 microns to about 250 microns. The coated shield has a surface roughness of between about 300 microinches and about 800 microinches and a surface particle density of less than about 0.1 particles/mmof particles between about 1 micron and about 5 microns in size and no particles below about 1 micron in size.
摘要翻译：要解决的问题：公开一种沉积室屏蔽及其制造方法。解决方案：沉积室屏蔽包括厚度为约100微米至约250微米的不锈钢涂层。涂覆的屏蔽物的表面粗糙度在约300微英寸至约800微英寸之间，表面颗粒密度小于约0.1微米/毫米颗粒，尺寸在约1微米至约5微米之间，没有大小在约1微米以下的颗粒。

4. 发明专利

IL107865D0 A building and a method for manufacturing microelectronic devices 未知
公开(公告)号：IL107865D0
公开(公告)日：1994-04-12
申请号：IL10786593
申请日：1993-12-03
申请人： SEMATECH INC
IPC分类号： H01L21/677 , F24F7/06 , E04B
摘要： A building houses a semiconductor manufacturing facility, which is circular in shape and is of a multi-story structure. A silo is located at the center for use in storing and transferring wafers to clean rooms disposed radially around the silo at each floor. Human access is not permitted in the silo and in the clean rooms in order to prevent contamination of the wafers. Due to the modularity of the clean room structures, clean rooms can be reconfigured easily without significant impact on the on-going manufacturing operation. The modularity also permits portions of the facility to be deactivated when not needed.

5. 发明专利

DE69309111T2 未知
公开(公告)号：DE69309111T2
公开(公告)日：1997-08-21
申请号：DE69309111
申请日：1993-12-13
申请人： SEMATECH INC
发明人： VASUDEV PRAHALAD , LOW KAH
IPC分类号： G03F1/26 , G03F1/32 , G03F1/34 , H01L21/027 , G03F1/14 , G03F7/09

6. 发明专利

DE4200283A1 Forming silicon@ wafers by spin-casting on rotating table - by forming melt of polycrystalline silicon@ granules and recrystallising using embedded seed-crystal 未知
公开(公告)号：DE4200283A1
公开(公告)日：1992-07-09
申请号：DE4200283
申请日：1992-01-08
申请人： SEMATECH INC
发明人： GEYLING FRANZ T
IPC分类号： C30B1/02 , C30B11/00 , H01L21/208 , H01L21/268
摘要： A melt container (12), pref. made of quartz and formed in a U-shape, filled with molten Si (17) above which a container (11) for granular polycrystallne Si (14) is placed to replenish the melt. The melt container is heated (13) to form the melt (17) and maintain its temp. (19) near the opening (25), from which it is poured to form Si wafers. The exit opening (25) is pref at the opposite end of the container from the filler opening (11). The granules container (11) is pref. a drum, pref. made of quartz, which can be rotated and contains a slit opening (15) through which it can be filled and emptied when the drum is in an appropriate position. A friction-less coating is used between the drum and the filler-opening of the melt container to provide a hermetic seal and allow easy rotation of the drum. A gas-inlet opening (24) allows an inert gas ambient to be used to force the melt out of the opening (25) to pour the wafers. The process consists of forming a melt, which is held inside the container by the pressure of the ambient gas, and pouring it onto a spinning plate (30). A method for recrystallisation is also claimed. USE/ADVANTAGE - Faster formation of single crystalline Si wafers compared with the conventional Czochralski crystal bar pulling. Avoids lengthy wafer-cutting process currently used. The method allows very much purer polycrystalline Si to be used and causes much less contamination since it is used quickly as it is poured into the melt container. The recrsytallistion has been modified to minimise contamination of the wafers. Avoidance of wafer sawing also reduces Si waste.

7. 发明申请

WO2012016068A3 GIGASONIC BRUSH FOR CLEANING SURFACES 审中-公开
公开(公告)号：WO2012016068A3
公开(公告)日：2012-02-02
申请号：PCT/US2011/045761
申请日：2011-07-28
申请人： SEMATECH INC. , RASTEGAR, Abbas
发明人： RASTEGAR, Abbas
IPC分类号： H01L21/302
摘要： An apparatus, system, and method for a Gigasonic Brush for cleaning surfaces is presented. One embodiment of the system includes an array of acoustic transducers coupled to a substrate where the individual acoustic transducers have sizes in the range of 9 um2 to 250,000 um2. The system may include a positioning mechanism coupled to at least one of a target surface or the array of acoustic transducers, and configured to position the array of acoustic transducers within 1 millimeter of a target surface. The system may also include a cleaning liquid supply arranged to provide cleaning liquid for coupling the array of acoustic transducers to the target surface. The system may further include a controller coupled to the array of acoustic transducers and configured to activate the array of acoustic transducers.

8. 发明申请

WO2009114253A2 IMMERSION LITHOGRAPHY USING HAFNIUM-BASED NANOPARTICLES 审中-公开
标题翻译：使用基于铌的纳米粒子进行沉积光刻
公开(公告)号：WO2009114253A2
公开(公告)日：2009-09-17
申请号：PCT/US2009/034852
申请日：2009-02-23
申请人： SEMATECH, INC. , ZIMMERMAN, Paul, A. , BYERS, Jeffrey (Deceased)
发明人： ZIMMERMAN, Paul, A. , BYERS, Jeffrey (Deceased)
IPC分类号： G03F7/20 , C01G27/02 , G03F7/004
CPC分类号： G03F7/2041 , B82Y30/00 , C01G27/02 , C01P2004/64 , C01P2006/60 , G03F7/0043
摘要： Method, apparatus, and composition of matter suited for use with, for example, immersion lithography. The composition of matter includes hafnium dioxide nanoparticles having diameters less than or equal to about 15 nanometers. The apparatus includes the composition of matter, a light source, a platform for supporting a work piece, and a lens element. The method includes providing a light source, providing a lens element between the light source and a work piece, providing the composition of matter between the lens element and the work piece, and exposing the work piece to light provided by the light source by passing light from the light source through the lens element and the composition of matter to the work piece.
摘要翻译：适用于例如浸没光刻的物质的方法，装置和组成。物质的组成包括直径小于或等于约15纳米的二氧化铪纳米颗粒。该装置包括物质的组成，光源，用于支撑工件的平台和透镜元件。该方法包括提供光源，在光源和工件之间提供透镜元件，在透镜元件和工件之间提供物质的组成，并将工件暴露于由光源通过光提供的光从光源通过透镜元件和物质的组成到工件。

9. 发明申请

WO1993005630A1 HARMONIC AND SUBHARMONIC ISOLATOR FOR PLASMA DISCHARGE 审中-公开
标题翻译：用于等离子体放电的谐波和次谐波隔离器
公开(公告)号：WO1993005630A1
公开(公告)日：1993-03-18
申请号：PCT/US1992007566
申请日：1992-09-08
申请人： SEMATECH, INC.
发明人： SEMATECH, INC. , MILLER, Paul, A.
IPC分类号： H05H01/46
CPC分类号： H01J37/32311 , H01J37/32174 , H01J37/32688 , H05H1/46
摘要： An isolator is disposed between a plasma reactor and its electrical energy source in order to isolate the reactor from the electrical energy source. The isolator operates as a filter to attenuate the transmission of harmonics of a fundamental frequency of the electrical energy source generated by the reactor from interacting with the energy source. By preventing harmonic and subharmonic interaction with the energy source, plasma conditions can be readily reproduced independent of the electrical characteristics of the electrical energy source and/or its associated coupling network.
摘要翻译：隔离器设置在等离子体反应器及其电能源之间，以将反应器与电能源隔离。隔离器用作滤波器，以衰减由反应器产生的电能源的基频的谐波的传输与能量源的相互作用。通过防止与能量源的谐波和次谐波相互作用，可以容易地再现等离子体条件，而不管电能源和/或其相关联的耦合网络的电特性。

10. 发明申请

WO2007044934A3 METHODS FOR CHARACTERIZING SEMICONDUCTOR MATERIAL USING OPTICAL METROLOGY 审中-公开
标题翻译：使用光学计量学表征半导体材料的方法
公开(公告)号：WO2007044934A3
公开(公告)日：2007-07-12
申请号：PCT/US2006040262
申请日：2006-10-12
申请人： SEMATECH INC , DIEBOLD ALAIN CHARLES , PRICE JAMES MARTIN
发明人： DIEBOLD ALAIN CHARLES , PRICE JAMES MARTIN
IPC分类号： G01B11/06 , G01N21/21 , H01L21/66
CPC分类号： G01B11/0641
摘要： Methods for characterizing a semiconductor material using optical metrology are disclosed. In one respect, a electromagnetic radiation source may be directed in a direction substantially parallel to patterns on a semiconductor material. A polarized spectroscopic reflectivity may be obtained, and a critical point data may be determined. Using the critical point data, physical dimensions of the patterns may be determined. In other respects, using optical metrology techniques, a critical point data relating to electron mobility may be determined.
摘要翻译：公开了使用光学计量学表征半导体材料的方法。在一个方面，电磁辐射源可以在基本平行于半导体材料上的图案的方向上引导。可以获得偏振光谱反射率，并且可以确定临界点数据。使用临界点数据，可以确定模式的物理尺寸。在其他方面，使用光学测量技术，可以确定与电子迁移率有关的临界点数据。

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