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1. 发明申请

WO2004086513A1 A METHOD OF IDENTIFYING A READ-OUT SIGNAL 审中-公开
标题翻译：识别读出信号的方法
公开(公告)号：WO2004086513A1
公开(公告)日：2004-10-07
申请号：PCT/AU2004/000396
申请日：2004-03-26
申请人： QUCOR PTY LTD , CLARK, Robert , BARRETT, Neil , REILLY, David , BUEHLER, Tilo
发明人： CLARK, Robert , BARRETT, Neil , REILLY, David , BUEHLER, Tilo
IPC分类号： H01L31/00
CPC分类号： H03H7/383 , B82Y10/00 , G06N99/002 , H03H7/40
摘要： The present invention provides a method of identifying a read-out signal from a signal-producing unit associated with a quantum device. For example, the signal-processing unit may comprise a quantum device such as a qubit. The signal-producing unit is capable of producing at least one valid signal and the method comprises storing a pattern of the or each valid signal. The method also comprises the steps of receiving the read-out signal from the signal-producing unit and comparing the pattern of the received read-out signal with at least one stored pattern of the or each valid signal. The present invention also provides an apparatus for identifying a read-out signal from the signal-producing unit associated with a quantum device.
摘要翻译：本发明提供一种从与量子器件相关联的信号产生单元识别读出信号的方法。例如，信号处理单元可以包括诸如量子位的量子器件。信号产生单元能够产生至少一个有效信号，并且该方法包括存储该或每个有效信号的模式。该方法还包括以下步骤：从信号产生单元接收读出信号，并将接收的读出信号的模式与该有效信号或每个有效信号的至少一个存储模式进行比较。本发明还提供了一种用于从与量子器件相关联的信号产生单元识别读出信号的装置。

2. 发明申请

WO2009100483A1 CONTROL AND READOUT OF ELECTRON OR HOLE SPIN 审中-公开
标题翻译：电子或空穴旋转的控制和读数
公开(公告)号：WO2009100483A1
公开(公告)日：2009-08-20
申请号：PCT/AU2009000155
申请日：2009-02-11
申请人： QUCOR PTY LTD , MORELLO ANDREA , DZURAK ANDREW STEVEN , HUEBL HANS-GREGOR , CLARK ROBERT GRAHAM , WILLEMS VAN BEVEREN LAURENS HENRY , HOLLENBERG LLOYD CHRISTOPHER LEONARD , JAMIESON DAVID NORMAN , ESCOTT CHRISOPHER
发明人： MORELLO ANDREA , DZURAK ANDREW STEVEN , HUEBL HANS-GREGOR , CLARK ROBERT GRAHAM , WILLEMS VAN BEVEREN LAURENS HENRY , HOLLENBERG LLOYD CHRISTOPHER LEONARD , JAMIESON DAVID NORMAN , ESCOTT CHRISOPHER
IPC分类号： H01L21/335 , G01N24/10 , G06N99/00 , H01L21/8238
CPC分类号： G01N24/10 , B82Y10/00 , G06N99/002 , H01L29/66984 , H01L29/7613
摘要： This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate overlying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the substrate beneath it. A fourth gate in close proximity to a single dopant atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate. In use either the third or fourth gate also serve as an Electron Spin Resonance (ESR) line to control the spin of the single electron or hole of the dopant atom. In a further aspect it concerns a method for using the device.
摘要翻译：本发明涉及用于控制和读出硅中单一掺杂剂的电子或空穴自旋的电子器件。该器件包括其中存在一个或多个欧姆接触区域的硅衬底。在衬底顶部的绝缘区域。间隔开的第一和第二栅极隔离小电荷区域以形成单电子晶体管（SET）的岛。第三栅极覆盖第一和第二栅极栅极，但与其绝缘，第三栅极能够在其下方的衬底中产生栅极感应电荷层（GICL）。靠近单一掺杂剂原子的第四栅极，掺杂剂原子被封装在GICL区域外部的衬底中，但足够接近以允许在栅极电位控制下的掺杂剂原子和SET岛之间的自旋相关电荷隧穿，主要是第四门。在使用中，第三或第四栅极还用作电子自旋共振（ESR）线以控制掺杂剂原子的单个电子或空穴的自旋。在另一方面，其涉及使用该装置的方法。

3. 发明申请

WO2009097643A1 FABRICATION OF ATOMIC SCALE DEVICES 审中-公开
标题翻译：原子尺度装置的制造
公开(公告)号：WO2009097643A1
公开(公告)日：2009-08-13
申请号：PCT/AU2008/001814
申请日：2008-12-09
申请人： QUCOR PTY LTD , SIMMONS, Michelle, Yvonne , FUHRER, Andreas , FUECHSLE, Martin , WEBER, Bent , REUSCH, Thilo, Curd, Gerhard , POK, Wilson , RUESS, Frank
发明人： SIMMONS, Michelle, Yvonne , FUHRER, Andreas , FUECHSLE, Martin , WEBER, Bent , REUSCH, Thilo, Curd, Gerhard , POK, Wilson , RUESS, Frank
IPC分类号： B82B3/00 , H01L21/28 , B82B1/00 , H01L21/31
CPC分类号： H01L23/544 , B82B3/0019 , B82Y10/00 , H01L29/66439 , H01L2924/0002 , H01L2924/00
摘要： This invention concerns the fabrication of nano to atomic scale devices, that is electronic devices fabricated down to atomic accuracy. The fabrication process uses either an SEM or a STM tip to pattern regions on a semiconductor substrate. Then, forming electrically active parts of the device at those regions. Encapsulating the formed device. Using a SEM or optical microscope to align locations for electrically conducting elements on the surface of the encapsulating semiconductor with respective active parts of the device encapsulated below the surface. Forming electrically conducting elements on the surface at the aligned locations. And, electrically connecting electrically conducting elements on the surface with aligned parts of the device encapsulated below the surface to allow electrical connectivity and tunability of the device. In further aspects the invention concerns the devices themselves.
摘要翻译：本发明涉及纳米到原子尺度装置的制造，即以原子精度制造的电子装置。制造工艺使用SEM或STM尖端来对半导体衬底上的区域进行图案化。然后，在这些区域形成器件的电活性部分。封装形成的装置。使用SEM或光学显微镜将包封半导体表面上的导电元件的位置与封装在表面下方的器件的相应有效部分对准。在对准位置的表面上形成导电元件。并且，将表面上的导电元件电连接到封装在表面下方的器件的对准部分，以允许器件的电连接和可调谐性。在另外的方面，本发明涉及装置本身。

4. 发明申请

WO2005019095A1 FABRICATING NANOSCALE AND ATOMIC SCALE DEVICES 审中-公开
标题翻译：制造纳米尺度和原子尺度装置
公开(公告)号：WO2005019095A1
公开(公告)日：2005-03-03
申请号：PCT/AU2004/001118
申请日：2004-08-20
申请人： QUCOR PTY LTD , RUESS, Frank, J. , OBERBECK, Lars , SIMMONS, Michelle, Yvonne , GOH, K., E., Johnson , HAMILTON, Alexander, Rudolf , MITIC, Mladen , BRENNER, Rolf , CURSON, Neil, Jonathan , HALLAM, Toby
发明人： RUESS, Frank, J. , OBERBECK, Lars , SIMMONS, Michelle, Yvonne , GOH, K., E., Johnson , HAMILTON, Alexander, Rudolf , MITIC, Mladen , BRENNER, Rolf , CURSON, Neil, Jonathan , HALLAM, Toby
IPC分类号： B82B3/00
CPC分类号： H01L23/544 , B82Y10/00 , B82Y30/00 , G01Q80/00 , H01L29/66439 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition the STM tip to pattern the device structure. Forming the active region of the device and then encapsulating it such that one or more of the registration markers are still visible to allow correct positioning of surface electrodes. The method can be used to form any number of device structures including quantum wires, single electron transistors, arrays or gate regions. The method can also be used to produce 3D devices by patterning subsequent layers with the STM and encapsulating in between.
摘要翻译：本发明涉及纳米尺度和原子尺度装置的制造。该方法涉及创建一个或多个注册标记。使用SEM或光学显微镜形成对准标记和扫描隧道显微镜（STM）的尖端的图像。使用图像定位和重新定位STM尖端以对设备结构进行图案化。形成器件的有源区，然后封装，使得一个或多个配准标记物仍然可见，以允许表面电极的正确定位。该方法可用于形成任何数量的器件结构，包括量子线，单电子晶体管，阵列或栅极区。该方法还可以用于通过用STM构图后续层并封装在其间来产生3D器件。

5. 发明申请

WO2005015489B1 QUBIT READOUT VIA CONTROLLED COHERENT TUNNELLING TO PROBE STATE 审中-公开
标题翻译： QUBIT READOUT通过控制的相关隧道到探索状态
公开(公告)号：WO2005015489B1
公开(公告)日：2005-03-24
申请号：PCT/AU2004001067
申请日：2004-08-10
申请人： QUCOR PTY LTD , GREENTREE ANDREW D , HAMILTON ALEXANDER R , GREEN FREDERICK , HOLLENBERG LLOYD C L
发明人： GREENTREE ANDREW D , HAMILTON ALEXANDER R , GREEN FREDERICK , HOLLENBERG LLOYD C L
IPC分类号： G06N99/00 , G06N1/00 , G01R29/24 , H01L29/15
CPC分类号： G06N99/002 , B82Y10/00
摘要： This invention concerns quantum computers in which the qubits are closed systems, in that the particle or particles are confined within the structure. A "site" can be produced by any method of confining an electron or other quantum particle, such as a dopant atom, a quantum dot, a cooper pair box, or any combination of these. In particular the invention concerns a closed three-site quantum particle system. The state in the third site is weakly coupled by coherent tunnelling to the first and second states, so that the third state is able to map out the populations of the first and second states as its energy is scanned with respect to the first and second states. In second and third aspects it concerns a readout method for a closed three-state quantum particle system.
摘要翻译：本发明涉及其中量子位是封闭系统的量子计算机，其中颗粒或颗粒被限制在结构内。可以通过限制电子或其他量子粒子，例如掺杂剂原子，量子点，铜对盒或这些的任何组合的任何方法来产生“位点”。特别地，本发明涉及封闭的三位置量子粒子系统。第三站点中的状态通过相干隧道到第一和第二状态而弱耦合，使得第三状态能够映射第一和第二状态的群体，因为其能量相对于第一和第二状态被扫描。在第二和第三方面，它涉及封闭的三态量子粒子系统的读出方法。

6. 发明申请

WO2005020139A1 BURIED QUANTUM DEVICE 审中-公开
标题翻译： BURIED量子器件
公开(公告)号：WO2005020139A1
公开(公告)日：2005-03-03
申请号：PCT/AU2004/001119
申请日：2004-08-20
申请人： QUCOR PTY LTD , BRENNER, Rolf , BUEHLER, Tilo, Markus , CHAN, Victor , CLARK, Robert, Graham , CURSON, Neil, Jonathan , DZURAK, Andrew, Steven , GAUJA, Eric , GOH, K., E., Johnson , HAMILTON, Alexander, Rudolf , HUDSON, Fay , MITIC, Mladen , OBERBECK, Lars , REILLY, David, J. , RUESS, Frank, J. , SIMMONS, Michelle, Yvonne
发明人： BRENNER, Rolf , BUEHLER, Tilo, Markus , CHAN, Victor , CLARK, Robert, Graham , CURSON, Neil, Jonathan , DZURAK, Andrew, Steven , GAUJA, Eric , GOH, K., E., Johnson , HAMILTON, Alexander, Rudolf , HUDSON, Fay , MITIC, Mladen , OBERBECK, Lars , REILLY, David, J. , RUESS, Frank, J. , SIMMONS, Michelle, Yvonne
IPC分类号： G06N1/00
CPC分类号： G06N99/002 , B82Y10/00
摘要： This invention concerns the architecture of a buried quantum device suitable for quantum computing. The device comprises: an electrically inert solid substrate. One or more dopant atom qubit sites buried in the substrate. One or more highly-doped gate regions buried in the substrate adjacent the qubit site, each operable as a control gate for the qubit. One or more highly-doped electrode regions buried in the substrate adjacent the qubit site, each operable as a coupling electrode to read-out the qubit. Electrical circuitry components on the surface of the substrate above respective regions. And, ohmic contact between each surface electrical circuitry component and the respective buried highly-doped region. In a further aspect the invention is a method for fabricating such a device.
摘要翻译：本发明涉及适用于量子计算的掩埋量子器件的架构。该装置包括：电惰性固体基质。掩埋在衬底中的一个或多个掺杂剂原子量子位。一个或多个高度掺杂的栅极区域，被埋在基板中，邻近量子位址，每一个都可用作量子位的控制栅极。一个或多个高掺杂电极区域埋在基板中，邻近量子位址，每一个可用作耦合电极以读出量子位。衬底表面上的电路元件在相应的区域上。并且，每个表面电路部件与相应的埋入高度掺杂区域之间的欧姆接触。在另一方面，本发明是一种制造这种装置的方法。

7. 发明申请

WO2005112087A1 IMPLANTED COUNTED DOPANT IONS 审中-公开
标题翻译：植入计数的离子
公开(公告)号：WO2005112087A1
公开(公告)日：2005-11-24
申请号：PCT/AU2005/000706
申请日：2005-05-18
申请人： QUCOR PTY LTD , ANDRESEN, Soren , DZURAK, Andrew, Steven , GUAJA, Eric , HEARNE, Sean , HOPF, Toby, Felix , JAMIESON, David, Norman , MITIC, Mladen , PRAWER, Steven , YANG, Changyi
发明人： ANDRESEN, Soren , DZURAK, Andrew, Steven , GUAJA, Eric , HEARNE, Sean , HOPF, Toby, Felix , JAMIESON, David, Norman , MITIC, Mladen , PRAWER, Steven , YANG, Changyi
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/66537 , H01L29/66583 , H01L29/7833 , H01L29/785
摘要： This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms (142) implanted in regions of a substrate (158) that are substantially intrinsic semiconductor. One or more doped surface regions (152) of the substrate (158) are metallised to form electrodes (150) and a counted number of dopant ions (142) are implanted in a region of the substantially intrinsic semiconductor.
摘要翻译：本发明涉及一般类型的半导体器件，其包括注入在基本上是本征半导体的衬底（158）的区域中的数量的掺杂剂原子（142）。衬底（158）的一个或多个掺杂表面区域（152）被金属化以形成电极（150），并且将计数的掺杂剂离子（142）注入基本上本征半导体的区域中。

8. 发明申请

WO2005085946A1 A PHOTON SOURCE 审中-公开
标题翻译：光电源
公开(公告)号：WO2005085946A1
公开(公告)日：2005-09-15
申请号：PCT/AU2005/000296
申请日：2005-03-02
申请人： QUCOR PTY LTD , HUNTINGTON, Shane, T. , PRAWER, Steven , GREENTREE, Andrew, D. , RABEAU, James
发明人： HUNTINGTON, Shane, T. , PRAWER, Steven , GREENTREE, Andrew, D. , RABEAU, James
IPC分类号： G02F1/365
CPC分类号： G02F1/365 , H04L9/0852
摘要： The present invention provides a photon source comprising an optical waveguide and a material having at least one colour centre. The or each colour centre is arranged for photon emission and the material is grown so that the material is bonded to the optical waveguide and in use at least some of the photons emitted by the or each colour centre are guided in the optical waveguide. The present invention also provides a photon source having an optical waveguide incorporating the material which has the at least one colour centre.
摘要翻译：本发明提供一种光源，其包括光波导和具有至少一个色心的材料。该颜色中心或每个颜色中心被布置用于光子发射，并且材料生长使得材料结合到光波导，并且在使用中，由该或每个颜色中心发射的至少一些光子在光波导中被引导。本发明还提供了一种光子源，其具有并入有至少一个颜色中心的材料的光波导。

9. 发明申请

WO2005015489A1 QUBIT READOUT VIA CONTROLLED COHERENT TUNNELLING TO PROBE STATE 审中-公开
标题翻译： QUBIT读数通过控制相关隧道到探针状态
公开(公告)号：WO2005015489A1
公开(公告)日：2005-02-17
申请号：PCT/AU2004/001067
申请日：2004-08-10
申请人： QUCOR PTY LTD , GREENTREE, Andrew, D. , HAMILTON, Alexander, R. , GREEN, Frederick , HOLLENBERG, Lloyd, C., L.
发明人： GREENTREE, Andrew, D. , HAMILTON, Alexander, R. , GREEN, Frederick , HOLLENBERG, Lloyd, C., L.
IPC分类号： G06N1/00
CPC分类号： G06N99/002 , B82Y10/00
摘要： This invention concerns quantum computers in which the qubits are closed systems, in that the particle or particles are confined within the structure. A "site" can be produced by any method of confining an electron or other quantum particle, such as a dopant atom, a quantum dot, a cooper pair box, or any combination of these. In particular the invention concerns a closed three-site quantum particle system. The state in the third site is weakly coupled by coherent tunnelling to the first and second states, so that the third state is able to map out the populations of the first and second states as its energy is scanned with respect to the first and second states. In second and third aspects it concerns a readout method for a closed three-state quantum particle system.
摘要翻译：本发明涉及其中量子位是封闭系统的量子计算机，其中一个或多个颗粒被限制在结构内。 “网站” 可以通过限制电子或其他量子粒子的任何方法产生，例如掺杂剂原子，量子点，铜对盒或这些的任意组合。特别地，本发明涉及封闭的三位点量子粒子系统。第三个位置的状态通过相干隧穿到第一个和第二个状态弱耦合，因此当第三个状态的能量相对于第一个和第二个状态被扫描时，第三个状态能够映射出第一个和第二个状态的总体。在第二和第三方面，它涉及一种封闭三态量子粒子系统的读出方法。

10. 发明申请

WO2004086295A1 A CONTROL ARCHITECTURE FOR A QUANTUM COMPUTER 审中-公开
标题翻译：量子计算机的控制架构
公开(公告)号：WO2004086295A1
公开(公告)日：2004-10-07
申请号：PCT/AU2004/000395
申请日：2004-03-26
申请人： QUCOR PTY LTD , CLARK, Robert , BARRETT, Neil , REILLY, David , BUEHLER, Tilo
发明人： CLARK, Robert , BARRETT, Neil , REILLY, David , BUEHLER, Tilo
IPC分类号： G06N1/00
CPC分类号： H03H7/383 , B82Y10/00 , G06N99/002 , H03H7/40
摘要： A control circuit (155), for applying signals to and detecting the status of a qubit of a quantum computer, is operated at a relatively low temperature (on the order of mK). An auxiliary circuit, for sending command signals to and receiving qubit status signals form the control circuit (155), is operated at room temperature. The control circuit (155) implements quantum error correction, and the auxiliary circuit may perform signal processing including pattern matching to determine the status of the qubit. The control circuit (155) may comprise impedance matching circuits (166, 167) with variable resistors such as field effect transistors (171), and generate reflected impedance-mismatch signals form single electron transistors (160, 161) coupled to the qubit. The control circuit (155) may further comprise tank circuits operating at frequencies higher than 500MHz, which allows the use of relatively small inductors (162, 163) for optimal integration, particularly for multiple qubit systems.
摘要翻译：用于将信号施加到量子计算机的量子位的状态并检测量子计算机的状态的控制电路（155）在相对较低的温度（约为mK）下运行。用于向控制电路（155）发送命令信号并接收量子位状态信号的辅助电路在室温下工作。控制电路（155）进行量子纠错，辅助电路可以执行包括模式匹配的信号处理，以确定量子位的状态。控制电路（155）可以包括具有诸如场效应晶体管（171）的可变电阻器的阻抗匹配电路（166,167），并且从耦合到量子位的单个电子晶体管（160,161）产生反射的阻抗失配信号。控制电路（155）还可以包括以高于500MHz的频率工作的储能电路，其允许使用相对小的电感器（162,163）来实现最佳集成，特别是对于多个量子位系统。

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