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1. 发明公开

EP2587538A1 A light emitting diode array 审中-公开
标题翻译： Anordnung von lichtemittierenden Dioden
公开(公告)号：EP2587538A1
公开(公告)日：2013-05-01
申请号：EP12166533.5
申请日：2012-05-03
申请人： Phostek, Inc.
发明人： Shao, Shih-Feng , Liu, Heng
IPC分类号： H01L25/075
CPC分类号： H01L25/0753 , H01L33/08 , H01L33/20 , H01L33/62 , H01L2224/48091 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode array comprises a plurality of light emitting diode units connected in series and arranged for forming an array with n rows and m columns. At least one of the numbers m and n of the array is an odd number.
摘要翻译：发光二极管阵列包括串联连接的多个发光二极管单元，用于形成具有n行m列的阵列。阵列的数字m和n中的至少一个是奇数。

2. 发明授权

US08835948B2 Stacked LED device with diagonal bonding pads 有权
标题翻译：堆叠的LED器件与对角焊盘
公开(公告)号：US08835948B2
公开(公告)日：2014-09-16
申请号：US13450682
申请日：2012-04-19
申请人： Yuan-Hsiao Chang , Yi-An Lu
发明人： Yuan-Hsiao Chang , Yi-An Lu
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/62 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.
摘要翻译：半导体发光器件包括衬底和衬底上的第一外延结构。第一外延结构包括第一掺杂层，第一发光层和第二掺杂层。第一电极耦合到第一掺杂层。第二电极被耦合到面向与第一电极相同的方向的第二掺杂层。第二外延结构包括第三掺杂层，第二发光层和第四掺杂层。第三电极耦合到面向与第一电极相同方向的第三掺杂层。第四电极耦合到面向与第一电极相同方向的第四掺杂层。粘合剂层位于第一外延结构和第二外延结构之间。

3. 发明授权

US08728834B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08728834B2
公开(公告)日：2014-05-20
申请号：US13540445
申请日：2012-07-02
申请人： Yuan-Hsiao Chang
发明人： Yuan-Hsiao Chang
IPC分类号： H01L21/02
CPC分类号： H01L33/02 , H01L31/022433 , H01L31/0475 , H01L31/0504 , H01L31/0508 , H01L31/055 , H01L31/18 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L2933/0016 , Y02E10/52
摘要： A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.
摘要翻译：通过在衬底上形成至少一个外延结构来制造半导体器件。衬底的一部分被切割和提升以暴露外延结构的部分表面。然后在暴露的部分表面上形成第一电极以产生垂直半导体器件。

4. 发明申请

US20140070261A1 STACKED LED DEVICE WITH POSTS IN ADHESIVE LAYER 审中-公开
标题翻译：堆叠式LED装置，粘贴层
公开(公告)号：US20140070261A1
公开(公告)日：2014-03-13
申请号：US14077625
申请日：2013-11-12
申请人： PHOSTEK, INC.
发明人： Yi-An Lu , Heng Liu
IPC分类号： H01L33/36
CPC分类号： H01L33/36 , H01L25/0756 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer. An electrode pattern is located on an upper surface of the second epitaxial structure, wherein the posts are located under electrodes in the electrode pattern.
摘要翻译：半导体发光器件包括衬底和衬底上的第一外延结构。第一外延结构包括第一掺杂层，第一发光层和第二掺杂层。第一掺杂层包括第一掺杂剂类型，第二掺杂层包括第二掺杂剂类型。第二外延结构包括第三掺杂层，第二发光层和第四掺杂层。粘合剂层位于第一外延结构和第二外延结构之间。一个或多个柱位于粘合剂层中。电极图案位于第二外延结构的上表面上，其中柱位于电极图案中的电极下方。

5. 发明申请

US20130285076A1 LIGHT EMITTING DIODE DEVICE 审中-公开
标题翻译：发光二极管装置
公开(公告)号：US20130285076A1
公开(公告)日：2013-10-31
申请号：US13532599
申请日：2012-06-25
申请人： Heng LIU , Jinn Kong SHEU
发明人： Heng LIU , Jinn Kong SHEU
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L25/0753 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： A light emitting diode (LED) device includes at least one stacking LED unit. The stacking LED unit includes a plurality of epitaxial structures interleaved with tunnel junctions. For a given predetermined input power, the plurality of epitaxial structures may reduce an operating current density of the stacking LED unit as compared to an LED unit with a single epitaxial structure and the same horizontal size. The reduced operating current density approaches a quantum efficiency peak. Additionally, for a given predetermined input power, the stacking LED unit may operate in a current density interval corresponding to a quantum efficiency within 20% decrement of the quantum efficiency peak.
摘要翻译：发光二极管（LED）装置包括至少一个堆叠LED单元。层叠LED单元包括与隧道结交错的多个外延结构。对于给定的预定输入功率，与具有单个外延结构和相同水平尺寸的LED单元相比，多个外延结构可以降低堆叠LED单元的工作电流密度。降低的工作电流密度接近量子效率峰值。此外，对于给定的预定输入功率，堆叠LED单元可以在对应于在量子效率峰值的20％减小内的量子效率的电流密度间隔中操作。

6. 发明申请

US20130264587A1 STACKED LED DEVICE USING OXIDE BONDING 审中-公开
标题翻译：堆叠LED设备使用氧化物结合
公开(公告)号：US20130264587A1
公开(公告)日：2013-10-10
申请号：US13438886
申请日：2012-04-04
申请人： Yuan-Hsiao Chang
发明人： Yuan-Hsiao Chang
IPC分类号： H01L27/15 , H01L33/42 , H01L33/08
CPC分类号： H01L27/15 , H01L25/0756 , H01L33/08 , H01L2224/48137 , H01L2224/48472 , H01L2224/49107
摘要： A semiconductor light emitting device includes a substrate, a first epitaxial structure, a first substantially transparent conducting layer, a second epitaxial structure, a second substantially transparent conducting layer, and a substantially transparent insulating layer. The first epitaxial structure is over the substrate and includes a first doped layer, a first light emitting layer, and a second doped layer. The first substantially transparent conducting layer is coupled to the second doped layer. The second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. The second substantially transparent conducting layer is coupled to the fourth doped layer. The substantially transparent insulating layer is between the first substantially transparent conducting layer and the second substantially transparent conducting layer.
摘要翻译：半导体发光器件包括衬底，第一外延结构，第一基本上透明的导电层，第二外延结构，第二基本上透明的导电层和基本透明的绝缘层。第一外延结构在衬底上，并且包括第一掺杂层，第一发光层和第二掺杂层。第一基本上透明的导电层耦合到第二掺杂层。第二外延结构包括第三掺杂层，第二发光层和第四掺杂层。第二基本上透明的导电层耦合到第四掺杂层。基本透明的绝缘层位于第一基本上透明的导电层和第二基本上透明的导电层之间。

7. 发明申请

US20130200419A1 SEMICONDUCTOR LIGHT EMITTING COMPONENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20130200419A1
公开(公告)日：2013-08-08
申请号：US13830396
申请日：2013-03-14
申请人： NCKU RESEARCH AND DEVELOPMENT FOUNDATION , Phostek, Inc.
发明人： Ray-Hua Horng , Yi-An Lu
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L27/153 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting component including an epitaxial structure, a first electrode, a second electrode, a first cutout structure and a second cutout structure is provided. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. The first electrode is formed on a surface of the first type doped layer. The second electrode is formed on a surface of the second type doped layer. The first cutout structure is formed in the first type doped layer to expose at least a portion of the first electrode. The second cutout structure is formed in the first type doped layer, the light emitting portion and the second type doped layer so as to expose at least a portion of the second electrode.
摘要翻译：提供了包括外延结构，第一电极，第二电极，第一切口结构和第二切口结构的半导体发光部件。外延结构包括第一类型掺杂层，发光部分和第二类型掺杂层。第一电极形成在第一类型掺杂层的表面上。第二电极形成在第二类型掺杂层的表面上。第一切除结构形成在第一类型掺杂层中以暴露第一电极的至少一部分。第二切除结构形成在第一类型掺杂层，发光部分和第二类型掺杂层中，以暴露第二电极的至少一部分。

8. 发明申请

US20130175674A1 SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20130175674A1
公开(公告)日：2013-07-11
申请号：US13678646
申请日：2012-11-16
申请人： Phostek, Inc.
发明人： Yen-Chang HSIEH , Jinn Kong SHEU , Heng LIU , Chun-Chao LI , Ya-Hsuan SHIH , Chia-Nan CHEN
IPC分类号： H01L29/36
CPC分类号： H01L29/36 , H01L25/0753 , H01L31/076 , H01L33/08 , H01L2924/0002 , Y02E10/548 , H01L2924/00
摘要： A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 1017 atoms/cm3. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the p-type doped layer and the n-type doped layer.
摘要翻译：半导体装置包括p型掺杂层，n型掺杂层和沉积并电耦合在p型掺杂层和n型掺杂层之间的内部电连接层。在一个实施例中，内部电连接层包括IV族元素和氮元素，并且IV族元素和氮元素的原子数大于内部电连接层中原子总数的50％。在另一个实施例中，内部电连接层包括浓度大于1017原子/ cm3的碳元素。在另一实施例中，内部电连接层形成在比p型掺杂层和n型掺杂层低的温度下。

9. 发明专利

TWI488295B 發光二極體陣列與其形成方法有权
简体标题：发光二极管数组与其形成方法
公开(公告)号：TWI488295B
公开(公告)日：2015-06-11
申请号：TW101118755
申请日：2012-05-25
申请人：華夏光股份有限公司 , PHOSTEK, INC.
发明人：盧怡安 , LU, YI AN
IPC分类号： H01L27/15 , H01L33/62

10. 发明专利

TWI487140B 交流發光裝置有权
简体标题：交流发光设备
公开(公告)号：TWI487140B
公开(公告)日：2015-06-01
申请号：TW101129608
申请日：2012-08-15
申请人：華夏光股份有限公司 , PHOSTEK, INC.
发明人：許進恭 , SHEU, JINN KONG
IPC分类号： H01L33/04

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