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1. 发明专利

JP2012138997A Motor drive circuit 有权
标题翻译：电机驱动电路
公开(公告)号：JP2012138997A
公开(公告)日：2012-07-19
申请号：JP2010288397
申请日：2010-12-24
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： ARAI TSUYOSHI , SUZUKI AKIRA
IPC分类号： H02P25/06 , H03H17/02 , H03H17/04
CPC分类号： H02P25/034 , H03H17/04
摘要： PROBLEM TO BE SOLVED: To shorten the time for vibration convergence irrespective of a resonance frequency of an actuator.SOLUTION: A motor drive circuit includes: a filter circuit for attenuating a frequency band including a resonance frequency of an actuator in a target current signal in the form of a digital signal indicating a target value of driving current supplied to a voice coil motor for driving the actuator; a digital-analog converter for converting an output signal of the filter circuit to an analog signal to be output as a current control signal; and a drive circuit for supplying the driving current to the voice coil motor in accordance with the current control signal. The filter circuit includes a digital notch filter for attenuating a frequency band centered on the resonance frequency in an input signal, and a digital low pass filter for attenuating a frequency band of or above a predetermined frequency lower than the resonance frequency in the input signal. The target current signal is input into one digital filter, and an output signal of the one digital filter is input into the other digital filter.
摘要翻译：要解决的问题：与致动器的共振频率无关地缩短振动收敛的时间。电动机驱动电路包括：滤波器电路，用于以指示提供给音圈的驱动电流的目标值的数字信号的形式衰减包括目标电流信号中的致动器的谐振频率的频带用于驱动执行器的电机; 数模转换器，用于将滤波器电路的输出信号转换为要作为电流控制信号输出的模拟信号; 以及用于根据电流控制信号向音圈电机提供驱动电流的驱动电路。滤波器电路包括用于衰减以输入信号中的谐振频率为中心的频带的数字陷波滤波器和用于衰减低于输入信号中的谐振频率的预定频率以上的频带的数字低通滤波器。目标电流信号被输入到一个数字滤波器中，并且一个数字滤波器的输出信号被输入到另一个数字滤波器中。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012134404A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2012134404A
公开(公告)日：2012-07-12
申请号：JP2010286844
申请日：2010-12-24
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： HIROSHIMA TAKASHI
IPC分类号： H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To finely adjust a resistance value of an individual resistance element itself with high accuracy without causing damage to a semiconductor device.SOLUTION: An N-type semiconductor layer 11 is formed on a P-type semiconductor substrate 10. A thin second insulating film 13 is formed on a surface of the semiconductor layer 11. A floating polysilicon layer 14 is formed on a first insulating film 12 and the second insulating film 13. The floating polysilicon layer 14 is covered with a third insulating film 15. A polysilicon resistive layer 16 is formed on the floating polysilicon layer 14 covered with the third insulating film 15. Then, when voltage is applied between the semiconductor layer 11 and the polysilicon resistive layer 16, an electron is injected into the floating polysilicon layer 14 through the second insulating film 13 and a hole accumulation layer 16A is formed in the polysilicon resistive layer 16.
摘要翻译：要解决的问题：以高精度精细地调节单个电阻元件本身的电阻值而不会损坏半导体器件。解决方案：在P型半导体衬底10上形成N型半导体层11.在半导体层11的表面上形成薄的第二绝缘膜13.浮置多晶硅层14形成在第一绝缘膜12和第二绝缘膜13.浮置多晶硅层14被第三绝缘膜15覆盖。多晶硅电阻层16形成在被第三绝缘膜15覆盖的浮置多晶硅层14上。然后，当电压为施加在半导体层11和多晶硅电阻层16之间，通过第二绝缘膜13将电子注入到浮置多晶硅层14中，并且在多晶硅电阻层16中形成空穴累积层16A。版权所有（ C）2012，JPO＆INPIT

3. 发明专利

JP2012130136A Integrated circuit 审中-公开
标题翻译：集成电路
公开(公告)号：JP2012130136A
公开(公告)日：2012-07-05
申请号：JP2010278424
申请日：2010-12-14
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： SEKI MASAO
IPC分类号： H02M3/155 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To protect a high side switching element from destruction by high power.SOLUTION: An integrated circuit includes: a first terminal to which a control electrode of the high side switching element is connected; a second terminal to which a control electrode of a low side switching element is connected; a third terminal to which a connection point of the high side switching element and the low side switching element is connected; a fourth terminal to which a first DC voltage is applied; a signal generation circuit for generating first and second switching signals for controlling ON/OFF of the high side switching element and the low side switching element respectively; and an output circuit for respectively buffering the first and second switching signals and outputting them from the first and second terminals. The output circuit includes a protective circuit for outputting control signals for turning OFF the high side switching element when a voltage between the third terminal and the fourth terminal is equal to or higher than a prescribed voltage.
摘要翻译：要解决的问题：保护高侧开关元件免受大功率的破坏。解决方案：集成电路包括：连接有高侧开关元件的控制电极的第一端子; 连接有低侧开关元件的控制电极的第二端子; 高侧开关元件和低侧开关元件的连接点连接的第三端子; 施加第一直流电压的第四端子; 信号产生电路，用于分别产生用于控制高侧开关元件和低侧开关元件的接通/断开的第一和第二开关信号; 以及用于分别缓冲第一和第二开关信号并从第一和第二端子输出的输出电路。输出电路包括保护电路，用于当第三端子和第四端子之间的电压等于或高于规定电压时，输出用于使高侧开关元件断开的控制信号。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012129375A Insulated gate bipolar transistor and method of manufacturing the same 审中-公开
标题翻译：绝缘栅双极晶体管及其制造方法
公开(公告)号：JP2012129375A
公开(公告)日：2012-07-05
申请号：JP2010280026
申请日：2010-12-16
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： SOMA MITSURU
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To enhance the conductivity modulation effect of an insulated gate bipolar transistor by preventing holes injected from a P+ type collector layer into an N- type base layer from flowing out to a P type base layer.SOLUTION: Between a P type base layer 5 consisting of silicon and an N- type base layer 3, a P type carrier blocking layer consisting of a composition of germanium having a band gap narrower than that of silicon, and silicon. Consequently, a recess having a low potential for the holes is formed in the P type carrier blocking layer 4 between the P type base layer 5 and the N- type base layer 3. Holes flowing into the recess are prevented from flowing out to the P type base layer 5 having a potential higher than that of the recess for the holes.
摘要翻译：要解决的问题：通过防止从P +型集电极层注入到N型基极层中的空穴流出到P型基极层，来提高绝缘栅双极晶体管的导电性调制效果。解决方案：在由硅组成的P型基底层5和N型基底层3之间，由具有窄于硅的带隙的锗组成的P型载流子阻挡层和硅构成。因此，在P型基底层5和N型基底层3之间的P型载体阻挡层4中形成具有低电位的凹部的凹部。防止流入凹部的孔流出到P 型基底层5的电位高于用于孔的凹槽的电位。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012129277A Drive circuit of current driven light-emitting element 审中-公开
标题翻译：当前驱动的发光元件的驱动电路
公开(公告)号：JP2012129277A
公开(公告)日：2012-07-05
申请号：JP2010277830
申请日：2010-12-14
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： ARAI TSUYOSHI
IPC分类号： H01L33/00 , G09G3/20 , G09G3/32 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide an LED drive circuit in which the load of a power supply is reduced by eliminating simultaneous turn on of multiple LEDs.SOLUTION: Cathode lines X1-X4 are arranged in the direction intersecting anode lines Y1-Y4. Sixteen LEDs are arranged, respectively, for the intersections of the anode lines Y1-Y4 and cathode lines X1-X4. Four PWM circuits are connected, respectively, with the cathode lines X1-X4. Each PWM circuit includes a current source 11-m, a counter 13-m, a comparator 12-m which compares display data Dm with the counter output from the counter 13-m, and N channel MOS transistors T5-T8 which supply the current of the current source 11-m to a corresponding LED according to the output COm from the comparator 12-m. Output phases of the counter 13-m are shifted from each other.
摘要翻译：要解决的问题：提供通过消除多个LED的同时导通来降低电源负载的LED驱动电路。解决方案：阴极线X1-X4沿与阳极线Y1-Y4相交的方向排列。阳极线Y1-Y4和阴极线X1-X4的交点分别布置有16个LED。四个PWM电路分别与阴极线X1-X4连接。每个PWM电路包括电流源11-m，计数器13-m，比较显示数据Dm和计数器13-m的计数器输出的比较器12-m以及提供电流的N沟道MOS晶体管T5-T8 根据来自比较器12-m的输出COm将电流源11-m输出到相应的LED。计数器13-m的输出相位彼此偏移。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012128060A Drive circuit of current drive type light-emitting device 审中-公开
标题翻译：电流驱动型发光装置的驱动电路
公开(公告)号：JP2012128060A
公开(公告)日：2012-07-05
申请号：JP2010277829
申请日：2010-12-14
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： ARAI TSUYOSHI
IPC分类号： G09G3/30 , G09G3/20 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide an LED drive circuit capable of lighting a plurality of LEDs having different current consumption allowable values with a proper luminance.SOLUTION: An LED drive circuit comprises: a time division control circuit 20 activating first to fourth columns of LEDs in a sequential manner; and a PMW circuit provided corresponding to the LEDs activated by the time division control circuit 20 and supplying electric current to the LEDs during a period of pulse width according to display data Dm in an activation period. The time division control circuit 20 sets an activation period of four LEDs corresponding a certain column such that the activation period is different from an activation period of four LEDs corresponding to the other column.
摘要翻译：要解决的问题：提供一种LED驱动电路，其能够以适当的亮度点亮具有不同的电流消耗容许值的多个LED。解决方案：LED驱动电路包括：时序控制电路20，以顺序方式激活第一至第四列的LED; 以及与由时分控制电路20激活的LED对应地设置的PMW电路，并且在激活期间根据显示数据Dm在脉冲宽度的周期期间向LED提供电流。时分控制电路20设定与特定列相对应的四个LED的激活期，使得激活周期与对应于另一列的四个LED的激活周期不同。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012119559A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012119559A
公开(公告)日：2012-06-21
申请号：JP2010269155
申请日：2010-12-02
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： YAMADA KATSUO , YAJIMA MANABU
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L29/41 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a power MOS transistor which reduces contact resistances of a miniaturized N+ type source layer and a source electrode.SOLUTION: A P-type body layer 6 is formed on a surface of an N-type drift layer 2, and an N+type source layer 7 is formed on a surface of the P-type body layer 6. A first contact hole 9 is formed on an interlayer insulating film 8 covering the N+type source layer 7, and a part of the N+type source layer 7 is exposed. A second contact hole 10 is formed from a surface of the N+type source layer 7 exposed to a bottom surface of the first contact hole 9 to the P-type body layer 6. A P+type contact layer 11 is formed on the surface of the P-type body layer 6 exposed to a bottom surface of the second contact hole 10. An N+type layer 7a having a smaller width than the variation width of a mask alignment accuracy in a photolithography process, is formed on the bottom surface of the first contact hole 9 and the first and second holes 9, 10 are filled with a tungsten layer 12 and so on.
摘要翻译：解决的问题：提供降低小型化N +型源极层和源极电极的接触电阻的功率MOS晶体管。解决方案：在N型漂移层2的表面上形成P型体层6，在P型体层6的表面上形成N +型源极层7.第一接触孔9形成在覆盖N +型源极层7的层间绝缘膜8上，并且N +型源极层7的一部分露出。第二接触孔10从暴露于第一接触孔9的底面到N型体层6的N +型源极层7的表面形成.P +型接触层11形成在表面暴露于第二接触孔10的底表面的P型体层6.在底面上形成具有比光刻工艺中的掩模对准精度的变化宽度小的宽度的N +型层7a 的第一接触孔9和第一孔9和第二孔10填充有钨层12等。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012070605A Motor drive circuit 审中-公开
标题翻译：电机驱动电路
公开(公告)号：JP2012070605A
公开(公告)日：2012-04-05
申请号：JP2010215703
申请日：2010-09-27
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： TAKAMORI YASUYUKI , MURAGI MASASHI
IPC分类号： H02P6/20
摘要： PROBLEM TO BE SOLVED: To start a motor quickly.SOLUTION: A motor drive circuit includes: a drive circuit 1 for outputting a drive signal to rotate a motor in a normal direction or reverse direction in accordance with a rotation direction indication signal indicating a normal or reverse rotation of the motor; a rotational frequency comparison circuit 4 for determining whether or not the rotational frequency of the motor is higher than a reference rotational frequency; a short brake control circuit 2 for controlling braking in accordance with the comparison result of the rotational frequency comparison circuit 4 when the rotation direction indication signal changes; an energized phase order changeover control circuit 3 for changing the direction of rotation; and a determination circuit 110 for controlling the drive circuit 1 such that the direction of rotation of the motor is changed without the action of braking the motor irrespective of the comparison result of the rotational frequency comparison circuit 4 if the rotation direction indication signal changes while the motor is stopped.
摘要翻译：要解决的问题：快速启动电机。电动机驱动电路包括：驱动电路1，用于根据指示电动机的正转或反转的旋转方向指示信号，输出驱动信号以使电动机沿正向或反向旋转; 用于确定电动机的旋转频率是否高于参考旋转频率的旋转频率比较电路4; 当旋转方向指示信号改变时，根据旋转频率比较电路4的比较结果来控制制动的短路制动控制电路2; 用于改变旋转方向的通电相位切换控制电路3; 以及确定电路110，用于如果旋转方向指示信号改变而不管旋转频率比较电路4的比较结果如何而不影响电动机的制动而改变电动机的旋转方向，电机停止。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012063843A Touch sensor 审中-公开
标题翻译：触摸传感器
公开(公告)号：JP2012063843A
公开(公告)日：2012-03-29
申请号：JP2010205603
申请日：2010-09-14
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： OTAGAKI TAKAYASU , ICHIKAWA ATSUHIRO , ITO HIROYA
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F3/0416
摘要： PROBLEM TO BE SOLVED: To provide a touch sensor that reduces the number of channels and that of wiring lines simultaneously and enables simultaneous depression of a plurality of touch keys.SOLUTION: A key board 20 includes 36 touch keys 21 disposed in six rows and six columns, drive lines 22-0 to 22-5, and sensor lines 23-0 to 23-5 on an insulation substrate SUB. The touch key 21 includes a central electrode 21a disposed on the insulation substrate SUB and an annular electrode 21b disposed by surrounding the central electrode 21a. A sensor circuit 30 includes a selective circuit 31 and a charge amplifier 32. The charge amplifier 32 detects a variation ΔC of the capacitance value C1 of an electrostatic capacitance formed between the central electrode 21a of the touch key 21 to which one sensor line 23-k (k=0 to 5) selected by the selective circuit 31 is connected and annular electrode 21b.
摘要翻译：要解决的问题：提供一种同时减少通道数量和布线数量的触摸传感器，并且能够同时按压多个触摸键。解决方案：键板20包括设置在绝缘衬底SUB上的六行六列，驱动线22-0至22-5和传感器线23-0至23-5的36个触摸键21。触摸键21包括设置在绝缘基板SUB上的中心电极21a和围绕中心电极21a设置的环形电极21b。传感器电路30包括选择电路31和电荷放大器32.电荷放大器32检测在触摸键21的中心电极21a之间形成的静电电容的电容值C1的变化量ΔC，一个传感器线23- 由选择电路31选择的k（k = 0〜5）与环状电极21b连接。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012059978A Protective device 审中-公开
标题翻译：保护装置
公开(公告)号：JP2012059978A
公开(公告)日：2012-03-22
申请号：JP2010202646
申请日：2010-09-10
申请人： On Semiconductor Trading Ltd , オンセミコンダクター・トレーディング・リミテッド
发明人： KOBAYASHI SHUNSUKE
IPC分类号： H01L29/866 , H01L21/822 , H01L27/04 , H01L29/861
CPC分类号： H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To solve the problem that manufacturing processes are complicated and troublesome in a conventional structure and cost reduction of a protective device and versatility of a breakdown voltage are limited, while a bidirectional pn junction diode is used as the protective device of ESD breakdown connected to a signal line between a USB connector and a component to be protected.SOLUTION: A p-type semiconductor layer is laminated on a p semiconductor substrate. A first n+-type impurity region and a second n+-type impurity region, separated from each other, are provided on the surface of the p-type semiconductor layer. A first p++-type impurity region and a second p++-type impurity region, smaller than the bottom surfaces of the first n+-type impurity region and the second n+-type impurity region, are provided immediately below the first n+-type impurity region and the second n+-type impurity region. A first electrode which is in contact with the first n+-type impurity region and is electrically connected to an input terminal and a second electrode which is in contact with the second n+-type impurity region and is electrically connected to a ground terminal are provided. The first n+-type impurity region and the second n+-type impurity region are separated by 140 μm or more, are respectively in a corner-rounded square shape, and are arranged along the diagonal of the p+-type semiconductor substrate.
摘要翻译：要解决的问题为了解决制造工艺在传统结构中复杂和麻烦并且保护装置的成本降低和击穿电压的通用性受到限制的问题，而双向pn结二极管用作保护 ESD击穿装置连接到USB连接器和要保护的部件之间的信号线。解决方案：p型半导体层层压在p半导体衬底上。在p型半导体层的表面上设置彼此分离的第一n +型杂质区和第二n +型杂质区。在第一n +型杂质区的正下方设置第一p ++型杂质区和小于第一n +型杂质区和第二n +型杂质区的底面的p ++型杂质区，第二n +型杂质区。提供与第一n +型杂质区域接触并与输入端子电连接的第一电极和与第二n +型杂质区域接触并与导体端子电连接的第二电极。第一n +型杂质区和第二n +型杂质区分别为140μm以上，分别为角圆形的正方形，并且沿着p +型半导体衬底的对角线排列。版权所有（C）2012，JPO＆INPIT

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