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1. 发明专利

JP2005268788A Particle-optical projection device 有权
标题翻译：粒子投影设备
公开(公告)号：JP2005268788A
公开(公告)日：2005-09-29
申请号：JP2005069236
申请日：2005-03-11
申请人： Ims Nanofabrication Gmbh , アイエムエスナノファブリカツィオンゲーエムベーハーIMS Nanofabrication GmbH
发明人： BUSCHBECK HERBERT , CHALUPKA ALFRED , LAMMER GERTRAUD , NOWAK ROBERT , PLATZGUMMER ELMAR , STENGL GERHARD DR
IPC分类号： H01L21/027 , G03F7/20 , G11B7/09 , H01J37/02 , H01J37/147 , H01J37/15 , H01J37/20 , H01J37/21 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/304 , H01J2237/024 , H01J2237/10 , H01J2237/216 , H01J2237/30455
摘要： PROBLEM TO BE SOLVED: To provide a method of arbitrarily changing an image position and a magnification to correct the deviation between the image and target positions, in the direction of the optical axis (Z-direction).
SOLUTION: In the particle-optical projection device (32), a pattern (B) is depicted on a target tp by energy-property charged particles. This pattern is made to emerge as a patterned beam pb of the charged particles, that emerge from a surface of a material body via at least one crossover c and is focused into an image S having a given magnitude and distortions. In order to correct the deviation in the Z-direction of the image S position from an actual position of the target tp, without changing the magnitude of the image S, the present projection device is provided with a position-detecting means ZD for measuring the Z positions of the target tp at several points and a control means 33 for calculating a correction value cr of a selected lens parameter of the particle-optical lens L2, arranged at the last stage and controlling the lens parameter, in accordance with the connection value.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种任意改变图像位置和倍率以在光轴方向（Z方向）上校正图像与目标位置之间的偏差的方法。解决方案：在粒子光学投影装置（32）中，通过能量带电粒子在目标tp上示出了图案（B）。该图案被形成为带电粒子的图案化束pb，其经由至少一个交叉c从材料体的表面出射，并被聚焦成具有给定幅度和失真的图像S. 为了校正图像S位置的Z方向与目标tp的实际位置的偏差，而不改变图像S的大小，本投影装置设置有位置检测装置ZD，用于测量在多个点处的目标tp的Z位置和用于根据连接值计算布置在最后阶段并控制透镜参数的粒子光学透镜L2的选定透镜参数的校正值cr的控制装置33 。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005322918A New-type pattern lithography method for particle beam processing 有权
标题翻译：用于粒子束处理的新型图案方法
公开(公告)号：JP2005322918A
公开(公告)日：2005-11-17
申请号：JP2005134233
申请日：2005-05-02
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： PLATZGUMMER ELMAR , CERNUSCA STEFAN
IPC分类号： G03F7/20 , G21K1/04 , G21K1/08 , G21K5/04 , G21K5/10 , H01J37/04 , H01J37/08 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/045 , H01J37/3174 , H01J2237/31774
摘要： PROBLEM TO BE SOLVED: To improve resolution, decrease line edge roughness, and furthermore enable irradiation of pixels, in accordance with grey scale in the region defining device for multi-beam pattern of a particle-beam processing device. SOLUTION: In the particle-beam processing device, a plurality of apertures (21) are arranged in a pattern-determining field (pf), the positions of the apertures (21) are mutually offset by not only the integerfold of effective width (w); but also by the integerfold of integral fraction of the effective width of the apertures, taken along the vertical or parallel directions (X, Y) to scanning directions. The pattern-determining field (pf) is divided into several domains (D), comprising the apertures configuring a number of zigzag lines (pl); the apertures in domains are mutually offset by the integerfold of the effective widths (w) along the vertical directions to the scanning directions; whereas the offset amounts of the apertures in different domains are each integral fractions of the widths. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提高分辨率，降低线边缘粗糙度，并且还可以根据用于粒子束处理装置的多光束图案的区域定义装置中的灰度级来进行像素的照射。解决方案：在粒子束处理装置中，多个孔（21）以图案确定场（pf）布置，孔（21）的位置不仅相互抵消有效的整数倍宽（w）; 而且还沿着垂直或平行方向（X，Y）沿扫描方向截取的孔的有效宽度的整数分数的整数倍。模式确定字段（pf）被划分成若干域（D），包括配置多个之字形行（P1）的孔。畴中的孔径沿着与扫描方向相关的垂直方向的有效宽度（w）的整数倍相互偏移; 而不同区域中的孔的偏移量是宽度的整体分数。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005108842A Particle-optical electrostatic lens 有权
标题翻译：颗粒光学静电镜
公开(公告)号：JP2005108842A
公开(公告)日：2005-04-21
申请号：JP2004281985
申请日：2004-09-28
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： STENGL GERHARD , BUSCHBECK HERBERT , LAMMER GERTRAUD
IPC分类号： H01J37/09 , H01J37/12 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/12 , H01J2237/3175
摘要： PROBLEM TO BE SOLVED: To make magnetic shield of an electrostatic lens system easy by reducing a space especially occupied by a lens. SOLUTION: In a charged particle beam exposure device, an electrostatic lens (ML) has some (at least three) electrodes surrounding a particle beam optical path with rotational symmetry (EFR, EM, EFN), and the electrodes are coaxially arranged on a common optical axis indicating a center of the optical path and has different electrostatic potentials applied through a power supply system. At least one sub set (a partial aggregate) of the electrode (EM) forms an electrode array realized as a series of electrodes continuously arranged along the optical axis and in a substantially equivalent shape. An outside part of the electrode (EM) of the electrode array has outside parts (OR) of corresponding opposite faces (f1, f2) respectively facing toward the next and the preceding electrodes. A length of the electrode (EM) is preferably at least 4.1 times (3 times) of an inner radius (ril) of the faces (fi, f2). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过减少特别被镜头占据的空间，使静电透镜系统的磁屏蔽变得容易。解决方案：在带电粒子束曝光装置中，静电透镜（ML）具有围绕具有旋转对称性（EFR，EM，EFN）的粒子束光路的一些（至少三个）电极，并且电极同轴布置在指示光路中心的公共光轴上，并且具有通过电源系统施加的不同的静电电位。电极（EM）的至少一个子集（部分聚集体）形成电极阵列，该电极阵列被实现为沿着光轴连续排列并以基本上等效的形状的一系列电极。电极阵列的电极（EM）的外部部分具有分别面向下一个电极和前一个电极的对应的相对面（f1，f2）的外部部分（OR）。电极（EM）的长度优选为面（fi，f2）的内半径（ril）的至少4.1倍（3倍）。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005328047A Pattern provision equipment with improved particle beam exposure 有权
标题翻译：具有改进的颗粒光束曝光的图案规定设备
公开(公告)号：JP2005328047A
公开(公告)日：2005-11-24
申请号：JP2005134248
申请日：2005-05-02
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： PLATZGUMMER ELMAR
IPC分类号： G03F7/20 , G21K1/08 , G21K5/10 , H01J37/04 , H01J37/08 , H01J37/09 , H01J37/302 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/045 , H01J37/3174 , H01J2237/31774
摘要： PROBLEM TO BE SOLVED: To provide an address enable mask for a maskless lithograph which permits an exposure based on a gray scale, processes a picture distortion, and easily equalizes patterns. SOLUTION: In a pattern provision device used for an electron beam exposure device, a plurality of blank openings 910 are arranged in a pattern provision field (bf) consisting of a plurality of polygonal lines (bl) at the blank openings, and there is provided deflection means which can be controlled by a blank signal 911, respectively. The deflection means at the blank opening of each group is supplied to the common group blank signal 911 for lines of the blank openings based on partitions to several groups (g4, g5, g6) of the blank openings. Moreover, a group blank signal of each group of the lines is supplied to blank means and is connected with each blank opening regardless of group blank signals of other groups in the same line. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供允许基于灰度级的曝光的无掩模版印刷机的地址使能掩模，处理图像失真并且容易地均衡图案。解决方案：在用于电子束曝光装置的图案提供装置中，多个坯料开口910布置在由空白开口处的多个折线（b1）组成的图案提供区域（bf）中，以及提供了可以分别由空白信号911控制的偏转装置。基于坯料开口的几组（g4，g5，g6）的分隔，将每个组的坯料开口处的偏转装置供应到坯料开口的线的公共组空白信号911。此外，每组线路的组空白信号被提供给空白装置，并且与每个空白开口连接，而不管同一行中其他组的组空白信号如何。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005252254A Method for compensating magnetic field in operating area 有权
标题翻译：操作区域磁场补偿方法
公开(公告)号：JP2005252254A
公开(公告)日：2005-09-15
申请号：JP2005052280
申请日：2005-02-28
申请人： Ims Nanofabrication Gmbh , アイエムエスナノファブリケイションゲエムベーハー
发明人： STENGL GERHARD , BUSCHBECK HERBERT
IPC分类号： H01J37/20 , G05F7/00 , H01H47/00 , H01L21/027
CPC分类号： G05F7/00
摘要： PROBLEM TO BE SOLVED: To compensate magnetic fields using magnetic field sensors set in an operating area (particle beam) where the magnetic fields must be compensated.
SOLUTION: Magnetic fields sensors S1, S2 in the operating area and a compensation coil Hh mechanism enclosing the operating area are used for the magnetic field compensation. The magnetic fields are in different positions, preferably in the positions opposite to each other with respect to the axis of symmetry of the operating area, and measured by at least two sensors S1, S2 generating respective sensor signals s1, s2. The sensor signals s1, s2 of the sensors S1, S2 are superposed to create feedback signals ms, fs, which are converted into a drive signal d1 by a control means. The drive signal is then used to control the direction of the magnetic field of at least one compensation coil (Hh).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：使用设置在必须补偿磁场的操作区域（粒子束）中的磁场传感器来补偿磁场。
解决方案：操作区域中的磁场传感器S1，S2和围绕操作区域的补偿线圈Hh机构用于磁场补偿。磁场位于不同的位置，优选地在相对于操作区域的对称轴线彼此相对的位置处，并且由至少两个产生各个传感器信号s1，s2的传感器S1，S2测量。传感器S1，S2的传感器信号s1，s2被叠加以产生由控制装置转换成驱动信号d1的反馈信号ms，fs。然后使用驱动信号来控制至少一个补偿线圈（Hh）的磁场方向。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005136409A Pattern definition device for maskless particle beam exposure system 审中-公开
标题翻译：用于无障碍颗粒光束曝光系统的图案定义装置
公开(公告)号：JP2005136409A
公开(公告)日：2005-05-26
申请号：JP2004305975
申请日：2004-10-20
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： LAMMER-PACHLINGER WOLFGANG , LAMMER GERTRAUD , CHALUPKA ALFRED DR
IPC分类号： H01J37/147 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/15 , H01J37/3177 , H01J2237/0453 , H01J2237/31774 , H01J2237/31776
摘要： PROBLEM TO BE SOLVED: To improve a verification beam by using a particle optics system provided with a pattern definition device for a beam exposure system, or a pattern definition device comprising an aperture array. SOLUTION: In a pattern definition device (102) to be used for an exposure system, a beam of charged particles is patterned via a plurality of devices. The device comprises at least one deflection means having a plurality of apertures surrounding beamlets, each aperture being equipped with at least two deflection electrodes which can apply different electrostatic potentials, so that the beamlet paths passing through respective apertures based on desired paths passing through the device (102) are corrected. By partitioning the plurality of apertures into a series of subfields (Aij), the deflection electrodes belonging to the same subfield (Aij) can be made to have a common power source. As a result, the pattern is interpolated with the electrostatic potential of the deflection electrodes constant, that is, to be linear between reference potentials at reference points (Pij) of respective subfields. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过使用具有用于束曝光系统的图案定义装置的粒子光学系统或包括孔径阵列的图案定义装置来改进验证光束。解决方案：在用于曝光系统的图案定义装置（102）中，经由多个装置对带电粒子束进行图案化。该装置包括至少一个偏转装置，其具有围绕子束的多个孔，每个孔配备有至少两个可应用不同静电电位的偏转电极，使得基于通过装置的所需路径穿过相应孔的子束路径（102）。通过将多个孔分隔成一系列子场（Aij），可以使属于相同子场（Aij）的偏转电极具有公共电源。结果，图案被内插，偏转电极的静电电位恒定，即在各个子场的参考点（Pij）处的参考电位之间是线性的。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005129944A Charged-particle multibeam exposure device 有权
标题翻译：充电颗粒多孔曝光装置
公开(公告)号：JP2005129944A
公开(公告)日：2005-05-19
申请号：JP2004305981
申请日：2004-10-20
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： STENGL GERHARD , PLATZGUMMER ELMAR , LOESCHNER HANS
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3177
摘要： PROBLEM TO BE SOLVED: To provide a charged-particle multibeam exposure device that enables a high throughput. SOLUTION: The charged-particle multibeam exposure device 1 for the exposure of a target 41 employs a plurality of beams of charged particles that travel along collimated beam paths directed toward a target 41. An illumination system 10, a forming means 20 and a projection optical system 30 are provided for each of the particle beams. The illumination system 10 and projection optical system 30 are composed of particle-optical lenses having lens elements common to more than one particle beam. A pattern defining means 20 is made up of a blanking means that defines a multitude of beamlets included in the respective particle beams to configure the form of the projection on the target 41 in a desired pattern, by permitting the beamlets to pass through exclusively a plurality of apertures that serve to define the forms of the beamlets transmitted therethrough, and further switches off the passage of selected beamlets from the respective paths. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够实现高产量的带电粒子多光束曝光装置。解决方案：用于曝光目标41的带电粒子多光束曝光装置1采用沿着朝向目标41的准直光束路径行进的多个带电粒子束。照明系统10，形成装置20和为每个粒子束提供投影光学系统30。照明系统10和投影光学系统30由具有多于一个粒子束共有的透镜元件的粒子光学透镜构成。图案定义装置20由消隐装置构成，该消隐装置限定包括在各个粒子束中的多个子束，以通过允许子束仅仅通过多个子镜来将目标41上的投影的形状设计成所需的图案用于限定通过其穿过的子束的形式，并且进一步切断所选择的子束从相应路径的通过。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004040076A Maskless particle beam device for exposing pattern on substrate 有权
公开(公告)号：JP2004040076A
公开(公告)日：2004-02-05
申请号：JP2003045145
申请日：2003-01-17
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： PLATZGUMMER ELMAR , LOESCHNER HANS , STENGL GERHARD , VONACH HERBERT , CHALUPKA ALFRED , LAMMER GERTRAUD , BUSCHBECK HERBERT , NOWAK ROBERT , WINDISCHBAUER TILL
IPC分类号： G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To provide an aperture means suitable for a charged particle beam pattern writing system having a blanking aperture array. SOLUTION: An aperture array (20) is arranged in a pattern writing region composed of a plurality of alternating lines wherein each line is composed of a first segment (sf) having no aperture, and second segments (r1, r2, r3) each including a large number of apertures separated by an aperture region as lateral offset. The lateral offset is equal to integer times of the aperture width and the length of the first segment is set longer than the lateral offset. It is repeated every n-th (n≥2) line in the direction perpendicular to the line direction. COPYRIGHT: (C)2004,JPO

9. 发明公开

KR20200128363A 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정 审中-公开
公开(公告)号：KR20200128363A
公开(公告)日：2020-11-12
申请号：KR20200052486
申请日：2020-04-29
申请人： IMS NANOFABRICATION GMBH
发明人： HOCHLEITNER GOTTFRIED , NAETAR WOLF , SPENGLER CHRISTOPH
IPC分类号： H01J37/302 , H01J37/22 , H01J37/317
摘要： 대전입자리소그래피장치에서, 원하는패턴을기록하는동안, 노출슬롯의지속시간은입자빔의변동을보상하도록조정된다. 기록프로세스에서, 어퍼처이미지는타겟상에서서로오버랩되어각각의픽셀은각각의픽셀에서오버랩되는다수의어퍼처이미지를통해노출되며, 이는유효픽셀노출시간, 즉기여노출슬롯의지속시간의합을통해각 픽셀의노출을초래하고, 노출슬롯지속시간은다음에의해조정된다: (i) 픽셀의노출시간의함수로서, 픽셀에대한유효픽셀노출시간의원하는지속시간(192)을판정하는단계; (ⅱ) 픽셀에대한기여노출슬롯(190)을판정하는단계; (ⅲ) 상기기여노출슬롯에대한지속시간(194)을계산하여, 상기기여노출슬롯에대한지속시간의합이유효픽셀노출시간의상기원하는지속시간(192)에근접한실제유효노출시간(195)이되도록판정하는단계. 단계(iii)에서의지속시간은미리정해진허용된지속시간의세트에따라계산되며, 이렇게계산된지속시간중 적어도하나는상기노출슬롯의세트에대해선택된다른지속시간과상이하다.

10. 发明申请

WO2006053358A1 PATTERN LOCK SYSTEM FOR PARTICLE-BEAM EXPOSURE APPARATUS 审中-公开
标题翻译：用于粒子束曝光装置的图案锁定系统
公开(公告)号：WO2006053358A1
公开(公告)日：2006-05-26
申请号：PCT/AT2005/000454
申请日：2005-11-15
申请人： IMS NANOFABRICATION GMBH , STENGL, Gerhard , BUSCHBECK, Herbert , NOWAK, Robert
发明人： STENGL, Gerhard , BUSCHBECK, Herbert , NOWAK, Robert
IPC分类号： H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3177
摘要： In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.
摘要翻译：在粒子束装置的图案锁定系统中，其中通过投影系统的至少两个连续的投影台进行图案的成像，参考标记在登记装置上成像以确定粒子束的位置，在由非最终投影仪舞台产生的参考标记的中间图像的位置处，其中登记装置位于中间成像平面的标称位置的位置。此外，为了在登记装置上产生扫描运动，根据时间相关的电压，通过设置在图案定义装置中的偏转装置横向移动参考子束。

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