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1. 发明申请

WO2005071040A1 METHOD OF ENHANCING PERFORMANCE OF CERIUM DOPED LUTETIUM ORTHOSILICATE CRYSTALS AND CRYSTALS PRODUCED THEREBY 审中-公开
标题翻译：提高硫酸镥硬脂酸钠晶体性能的方法及其生产的晶体
公开(公告)号：WO2005071040A1
公开(公告)日：2005-08-04
申请号：PCT/US2005/000180
申请日：2005-01-05
申请人： CRYSTAL PHOTONICS, INCORPORATED , CHAI, Bruce
发明人： CHAI, Bruce
IPC分类号： C09K11/08
CPC分类号： C04B35/16 , C04B2235/3224 , C04B2235/3427 , C04B2235/76 , C04B2235/9646 , C09K11/7774 , C30B29/34 , C30B31/06 , C30B33/02
摘要： A method for enhancing the light yield of a single crystal of cerium doped lutetium orthosilicate (LSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process of thermal oxygenation of the crystal effectively supplies oxygen to fill at least some of the oxygen vacancies in the body of monocrystalline LSO. A scintillation detector comprises a monocrystalline body of LSO enhanced by oxygen diffusion into the crystal.
摘要翻译：响应于高能辐射的照射，提高铈掺杂的原硅酸镥（LSO）的单晶的光产率的方法包括通过在含氧的环境中加热晶体一段时间将氧扩散到晶体中。该晶体的热氧化过程有效地提供氧气以填充单晶LSO体内的至少一些氧空位。闪烁检测器包括通过氧气扩散到晶体中增强的LSO单晶体。

2. 发明申请

WO2006071236A1 METHOD OF ENHANCING PERFORMANCE OF CERIUM DOPED LUTETIUM YTTRIUM ORTHOSILICATE CRYSTALS AND CRYSTALS PRODUCED THEREBY 审中-公开
标题翻译：提高醛酸钇铝酸钠晶体性能的方法及其生产的晶体
公开(公告)号：WO2006071236A1
公开(公告)日：2006-07-06
申请号：PCT/US2005/000247
申请日：2005-01-05
申请人： CRYSTAL PHOTONICS, INCORPORATED , CHAI, Bruce
发明人： CHAI, Bruce
IPC分类号： C09K11/79 , C09K11/08 , G01T1/202
CPC分类号： G01T1/2023 , C09K11/7774 , C30B15/00 , C30B15/10 , C30B29/34 , G21K4/00
摘要： A method for enhancing the light yield of a single crystal of cerium doped lutetium yttrium orthosilicate (LYSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process of thermal oxygenation of the crystal effectively supplies oxygen to fill at least some of the oxygen vacancies in the body of monocrystalline LYSO. A scintillation detector comprises a monocrystalline body of LYSO enhanced by oxygen diffusion into the crystal.
摘要翻译：响应于高能量辐射的照射，提高铈掺杂的镥原硅酸钇（LYSO）的单晶的光产率的方法包括通过在含有氧的环境中加热晶体一段时间将氧扩散到晶体中。该晶体的热氧化过程有效地提供氧气以填充单晶LYSO体内的至少一些氧空位。闪烁检测器包括通过氧扩散到晶体中而增强的LYSO单晶体。

3. 发明申请

WO2004084275A2 METHOD FOR MAKING GROUP III NITRIDE DEVICES AND DEVICES PRODUCED THEREBY 审中-公开
标题翻译：制造III族氮化物器件的方法和由此制造的器件
公开(公告)号：WO2004084275A2
公开(公告)日：2004-09-30
申请号：PCT/US2004/008266
申请日：2004-03-18
申请人： CRYSTAL PHOTONICS, INCORPORATED , CHAI, Bruce, H., T. , GALLAGHER, John, Joseph , HILL, David, Wayne
发明人： CHAI, Bruce, H., T. , GALLAGHER, John, Joseph , HILL, David, Wayne
IPC分类号： H01L
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B29/60 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO 2 ); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.
摘要翻译：一种用于制造至少一个半导体器件的方法，该方法包括提供铝酸锂（LiAlO 2）的牺牲生长衬底; 在牺牲生长衬底附近形成包括III族氮化物的至少一个半导体层; 将安装衬底附接到与所述牺牲生长衬底相对的所述至少一个半导体层附近; 并去除牺牲生长衬底。该方法可以进一步包括将至少一个接触添加到与安装衬底相对的至少一个半导体层的表面上，并且将安装衬底和至少一个半导体层分成多个单独的半导体器件。为了制造最终的器件，该方法可以进一步包括将每个单独的半导体器件的安装衬底接合到散热器。移除牺牲衬底的步骤可以包括湿法刻蚀牺牲生长衬底。

4. 发明申请

WO2008028051A1 HIGH-INDEX UV OPITCAL MATERIALS FOR IMMERSION LITHOGRAPHY 审中-公开
标题翻译：高指数紫外线光学材料
公开(公告)号：WO2008028051A1
公开(公告)日：2008-03-06
申请号：PCT/US2007/077259
申请日：2007-08-30
申请人： CRYSTAL PHOTONICS, INCORPORATED , JEN, Shen , FEI, Yi-Ting , CHAI, Bruce
发明人： JEN, Shen , FEI, Yi-Ting , CHAI, Bruce
IPC分类号： C30B9/00 , C30B15/00 , C30B29/22 , G03F7/20
CPC分类号： G03F7/70958 , C30B15/00 , C30B29/22 , G02B1/02 , G03F7/70341
摘要： This invention is related to material for use as an ultraviolet (UV) optical element and particularly for use as a 193 nm immersion lens element. The material for use as a UV optical element includes a Lithium Magnesium Aluminate (LMAO) body. The specific compound for this application is the disordered lithium magnesium spinel, having the general composition of Li x Mg 2(1-x) AI 4+x O 8 where x = 0 to 1 as the high-index UV transparent material for immersion lithography. The LMAO body may include a disordered spinel, such as, for example, a single crystal that may be cubic in symmetry, optically isotropic, and having cation disorder within the structure to reduce the intrinsic birefringence (IBR). The LMAO body has certain desired material properties and may be readily made in relatively large sizes suitable for use as the UV optical element for photolithography.
摘要翻译：本发明涉及用作紫外线（UV）光学元件并且特别用作193nm浸没透镜元件的材料。用作UV光学元件的材料包括铝酸锂铝（LMAO）铝体。用于该应用的具体化合物是无序的锂镁尖晶石，其具有一般组成为Li x2 Mg 2（1-x）3 Al + 4 + x < 其中x = 0至1作为用于浸渍光刻的高折射率UV透明材料。 LMAO体可以包括无序尖晶石，例如可以是对称的立方体，光学各向同性的并且在结构内具有阳离子障碍以降低固有双折射（IBR）的单晶。 LMAO体具有一定的期望的材料性质，并且可以容易地制成适合用作光刻的UV光学元件的相对大的尺寸。

5. 发明授权

US09658344B1 Apparatus including scintillation crystal array with different reflector layers and associated methods 有权
公开(公告)号：US09658344B1
公开(公告)日：2017-05-23
申请号：US14932493
申请日：2015-11-04
申请人： CRYSTAL PHOTONICS, INCORPORATED
发明人： Bruce Chai , Xiao-mei Pan , Bao-hui Zhou
IPC分类号： G01T1/164 , G01T1/202 , G01T1/20
CPC分类号： G01T1/2023 , G01T1/1641 , G01T1/2002 , G01T1/2018 , G01T1/202
摘要： A radiation detector, such as for a PET scanner, may include an array of scintillator crystals, with each scintillator crystal having a polished end, a roughened end opposite the polished end, and polished sides extending between the polished end and the roughened end. The detector may also include a specular reflector layer between adjacent polished sides of adjacent ones of the array of scintillator crystals, and a diffusive reflector layer adjacent the roughened ends of the array of scintillator crystals. The detector may further include at least one photodetector adjacent the polished ends of the array of scintillator crystals.

6. 发明申请

US20080055715A1 HIGH-INDEX UV OPTICAL MATERIALS FOR IMMERSION LITHOGRAPHY 有权
标题翻译：高分辨率UV光学材料
公开(公告)号：US20080055715A1
公开(公告)日：2008-03-06
申请号：US11847128
申请日：2007-08-29
申请人： Yi-Ting Fei , Shen Jen , Bruce Chai
发明人： Yi-Ting Fei , Shen Jen , Bruce Chai
IPC分类号： G03B27/54 , G03F1/00
CPC分类号： G03F7/70958 , C30B15/00 , C30B29/22 , G02B1/02 , G03F7/70341
摘要： This invention is related to material for use as an ultraviolet (UV) optical element and particularly for use as a 193 nm immersion lens element. The material for use as a UV optical element includes a Lithium Magnesium Aluminate (LMAO) body. The specific compound for this application is the disordered lithium magnesium spinel, having the general composition of LixMg2(1-x)Al4+xO8 where x=0 to 1 as the high-index UV transparent material for immersion lithography. The LMAO body may include a disordered spinel, such as, for example, a single crystal that may be cubic in symmetry, optically isotropic, and having cation disorder within the structure to reduce the intrinsic birefringence (IBR). The LMAO body has certain desired material properties and may be readily made in relatively large sizes suitable for use as the UV optical element for photolithography.
摘要翻译：本发明涉及用作紫外线（UV）光学元件并且特别用作193nm浸没透镜元件的材料。用作UV光学元件的材料包括铝酸锂铝（LMAO）铝体。用于该应用的具体化合物是无序的锂镁尖晶石，具有一般组成为Li x2 Mg（2-x）Al 4+ x + 其中x = 0至1作为用于浸渍光刻的高折射率UV透明材料。 LMAO体可以包括无序尖晶石，例如可以是对称的立方体，光学各向同性的并且在结构内具有阳离子障碍以降低固有双折射（IBR）的单晶。 LMAO体具有一定的期望的材料性质，并且可以容易地制成适合用作光刻的UV光学元件的相对大的尺寸。

7. 发明授权

US07151261B2 Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby 失效
标题翻译：增强铈掺杂的原硅酸镥晶体的性能的方法和由此产生的晶体
公开(公告)号：US07151261B2
公开(公告)日：2006-12-19
申请号：US10754238
申请日：2004-01-09
申请人： Bruce Chai
发明人： Bruce Chai
IPC分类号： G01T1/20
CPC分类号： C04B35/16 , C04B2235/3224 , C04B2235/3427 , C04B2235/76 , C04B2235/9646 , C09K11/7774 , C30B29/34 , C30B31/06 , C30B33/02
摘要： A method for enhancing the light yield of a single crystal of cerium doped lutetium orthosilicate (LSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process of thermal oxygenation of the crystal effectively supplies oxygen to fill at least some of the oxygen vacancies in the body of monocrystalline LSO. A scintillation detector comprises a monocrystalline body of LSO enhanced by oxygen diffusion into the crystal.
摘要翻译：用于提高响应于高能辐射照射的铈掺杂的原硅酸镥（LSO）的单晶的光产率的方法包括通过在包含氧的环境中加热晶体一段时间将氧扩散到晶体中。该晶体的热氧化过程有效地提供氧气以填充单晶LSO体内的至少一些氧空位。闪烁检测器包括通过氧扩散到晶体中增强的LSO单晶体。

8. 发明申请

US20040209402A1 Method for making Group III nitride devices and devices produced thereby 失效
标题翻译：制造III族氮化物器件的方法及其制造的器件
公开(公告)号：US20040209402A1
公开(公告)日：2004-10-21
申请号：US10803467
申请日：2004-03-18
申请人： CRYSTAL PHOTONICS, INCORPORATED
发明人： Bruce H.T. Chai , John Joseph Gallagher , David Wayne Hill
IPC分类号： H01L033/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B29/60 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.
摘要翻译：一种制造至少一种半导体器件的方法，包括提供铝酸锂（LiAlO 2）的牺牲生长衬底; 在所述牺牲生长衬底附近形成包含III族氮化物的至少一个半导体层; 将安装基板附接到与所述牺牲生长衬底相对的所述至少一个半导体层; 并去除牺牲生长衬底。该方法还可以包括将至少一个触点添加到与安装基板相对的至少一个半导体层的表面上，以及将安装基板和至少一个半导体层分成多个单独的半导体器件。为了制造最终装置，该方法还可以包括将每个单独的半导体器件的安装衬底接合到散热器。去除牺牲衬底的步骤可以包括湿蚀刻牺牲生长衬底。

9. 发明申请

US20020015452A1 Electronic device including langasite structure compound and method for making such devices 失效
公开(公告)号：US20020015452A1
公开(公告)日：2002-02-07
申请号：US09848715
申请日：2001-05-03
申请人： Crystal Photonics, Incorporated
发明人： Bruce H.T. Chai , Mitch M.C. Chou , Haihong Qiu , Shen Jen
IPC分类号： H03K009/00 , H04L027/06 , H04L027/14 , H04L027/22
CPC分类号： H03H9/64 , H03H9/02039 , H03H9/0259 , H03H9/56
摘要： An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14 wherein A is strontium, B is niobium, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.

10. 发明申请

US20070114566A1 METHOD FOR MAKING FREE-STANDING AlGaN WAFER, WAFER PRODUCED THEREBY, AND ASSOCIATED METHODS AND DEVICES USING THE WAFER 失效
标题翻译：制造自由置换AlGaN波形的方法，生产的波形以及使用波形的相关方法和器件
公开(公告)号：US20070114566A1
公开(公告)日：2007-05-24
申请号：US11627712
申请日：2007-01-26
申请人： Herbert MARUSKA , John Gallagher , Mitch Chou , David Hill
发明人： Herbert MARUSKA , John Gallagher , Mitch Chou , David Hill
IPC分类号： H01L31/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02491 , H01L21/02499 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/007
摘要： A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107cm−2.
摘要翻译：制造独立的单晶，氮化镓铝（AlGaN）晶片的方法包括：使用卤化铝反应气体，镓（AlGaN）形成直接在单晶LiAlO 2衬底上的单晶AlGaN层卤化物反应物气体，并从单晶AlGaN层除去单晶LiAlO 2衬底以制造独立的单晶AlGaN晶片。形成单晶AlGaN层可以包括使用铝和卤化镓反应物气体和含氮反应气体通过气相外延（VPE）沉积AlGaN。使用VPE的AlGaN层的生长提供商业上可接受的快速生长速率。此外，AlGaN层整体上不含碳。因为所生产的AlGaN层是高质量的单晶，所以它的缺陷密度可能小于约10 -7 cm -2。

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