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1. 发明专利

JP2011035435A Method for forming insulating film 审中-公开
标题翻译：形成绝缘膜的方法
公开(公告)号：JP2011035435A
公开(公告)日：2011-02-17
申请号：JP2010261736
申请日：2010-11-08
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： SASAKI ATSUSHI , AZUMA KAZUFUMI , IDE TETSUYA , NAKADA YUKIHIKO
IPC分类号： H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an insulating film which can prevent a substrate to be treated or the insulating film from being damaged, and can favorably form the insulating film on the substrate.
SOLUTION: A substrate 100 to be treated is put in a vacuum vessel 2 having an electromagnetic wave incident surface F. A first gas containing at least one of a rare gas and an oxygen gas is introduced into the vacuum vessel 2 from a position spaced from the electromagnetic wave incident surface F by a distance smaller than 10 mm. A second gas containing an organic silicon compound is introduced into the vacuum vessel 2 from a position spaced by a distance not shorter than 10 mm from the electromagnetic wave incident surface. When an electromagnetic wave enters from the electromagnetic wave incident surface F into the vacuum vessel 2, surface wave plasma is generated in the vacuum vessel and a silicon oxide is deposited on the substrate 100.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种能够防止基板被处理或绝缘膜受损的绝缘膜的形成方法，能够有利地在基板上形成绝缘膜。解决方案：将待处理的基板100放入具有电磁波入射表面F的真空容器2中。将包含稀有气体和氧气的至少一种的第一气体从位置与电磁波入射面F间隔一个小于10mm的距离。含有有机硅化合物的第二气体从与电磁波入射面间隔不到10mm的距离的位置引入真空容器2。当电磁波从电磁波入射面F进入真空容器2时，在真空容器中产生表面波等离子体，并在基板100上沉积氧化硅。（C）2011年，JPO＆INPIT

2. 发明专利

JP2009260329A Thin-film semiconductor device, and method for manufacturing the same 审中-公开
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：JP2009260329A
公开(公告)日：2009-11-05
申请号：JP2009075474
申请日：2009-03-26
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： MIHASHI KATSUNORI
IPC分类号： H01L29/786 , G02F1/1345 , G02F1/1368 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/52 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device which has superior contact properties and superior element properties, and to provide a method for manufacturing the same. SOLUTION: The thin-film semiconductor device includes: an island semiconductor layer formed on a transparent insulating substrate and including a source region and a drain region containing first-conductivity-type impurities while a predetermined interval spaced apart from each other; a gate insulating film which is formed on a portion of the island semiconductor layer between the source region and the drain region; a gate electrode formed on the gate insulating film; an interlayer insulating film covering the island semiconductor layer and the gate electrode; a polycrystalline semiconductor layer connected to the source region and drain region respectively, embedded in a contact hole bored in the interlayer insulating film and containing an impurity; and a wiring layer including a high-fusion-point metal layer connected to the polycrystalline semiconductor layer, a thin layer made of a compound of a high-fusion-point metal and a semiconductor being formed between the polycrystalline semiconductor layer and the high-fusion-point metal layer of the wiring layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供具有优异的接触性能和优异的元件性能的薄膜半导体器件，并提供其制造方法。解决方案：薄膜半导体器件包括：岛状半导体层，形成在透明绝缘基板上，并且包括源极区域和含有第一导电型杂质的漏极区域，并以彼此间隔开的预定间隔; 栅极绝缘膜，其形成在所述源极区域和所述漏极区域之间的所述岛状半导体层的一部分上; 形成在栅极绝缘膜上的栅电极; 覆盖岛状半导体层和栅电极的层间绝缘膜; 分别连接到源极区和漏极区的多晶半导体层，嵌入在层间绝缘膜中钻出的含有杂质的接触孔中; 以及包括与多晶半导体层连接的高熔点金属层的布线层，在多晶半导体层和高熔点之间形成由高熔点金属和半导体的化合物构成的薄层点金属层。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009252902A Heat treatment apparatus, heat treatment method, and manufacturing method of semiconductor device 审中-公开
标题翻译：热处理设备，热处理方法及半导体器件的制造方法
公开(公告)号：JP2009252902A
公开(公告)日：2009-10-29
申请号：JP2008097398
申请日：2008-04-03
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： SASAKI ATSUSHI
IPC分类号： H01L21/26 , H01L21/20 , H01L21/265 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment apparatus enabling a uniform heat treatment of a semiconductor layer containing impurities, a heat treatment method, and a manufacturing method of a semiconductor device which uses this heat treatment apparatus.
SOLUTION: The present invention relates to the heat treatment apparatus, performing heat treatment of a workpiece by a heat transmission from a heating element equipped with the heating element, and a means for irradiating a light to this heating element. The heating element includes a transparent substrate; a metal film which is provided on this transparent substrate and has a large number of holes; and a melting metal mass filled in the holes and contacted with the workpiece, a part of which projects outside the holes; and a material constituting the metal film has a melting point higher than an in-use upper bound temperature of the heating element; a material constituting the molten metal mass has a melting point lower than the strain point of the workpiece and a boiling point higher than the in-use upper bound temperature of the heating element; and the heating element is heated by the means for irradiating the light, and a heat thereof is transmitted to the workpiece by using the molten metal mass as a heat-transmitting medium and the heat treatment of the workpiece is performed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够对含有杂质的半导体层进行均匀热处理的热处理设备，热处理方法以及使用该热处理设备的半导体器件的制造方法。热处理装置技术领域本发明涉及一种热处理装置，其特征在于，具有通过来自配有所述加热元件的加热元件的热传递对工件进行热处理，以及向该加热元件照射光的装置。加热元件包括透明基板; 设置在该透明基板上并具有大量孔的金属膜; 并且填充在孔中并与工件接触的熔融金属块，其一部分突出到孔的外部; 并且构成金属膜的材料的熔点高于加热元件的使用上限温度; 构成熔融金属物料的材料的熔点低于工件的应变点，沸点高于加热元件的使用上限温度; 通过用于照射光的装置来加热加热元件，并且通过使用熔融金属块作为传热介质将其热量传递到工件，并且进行工件的热处理。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009158982A Thin film transistor, circuit apparatus and liquid crystal display 审中-公开
标题翻译：薄膜晶体管，电路设备和液晶显示器
公开(公告)号：JP2009158982A
公开(公告)日：2009-07-16
申请号：JP2009096401
申请日：2009-04-10
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： HIRAMATSU MASAHITO , MATSUMURA MASAKIYO , NISHITANI MIKIHIKO , KIMURA YOSHINOBU , YAMAMOTO YOSHITAKA
IPC分类号： H01L21/336 , H01L21/77 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78618 , H01L29/78675
摘要： PROBLEM TO BE SOLVED: To reduce variation in electric characteristics of the thin film transistor in: a thin film transistor; a circuit apparatus including the thin film transistor; a liquid crystal display including the thin film transistor; and a liquid crystal display including the circuit apparatus.
SOLUTION: A thin film semiconductor device includes a glass substrate 51, an amorphous silicon film 53 provided on the substrate, a plurality of thin and long crystal grains 31 crystallized on the amorphous silicon film, and a thin film transistor having an active layer 11 arranged on the crystal grains.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了减少薄膜晶体管的电特性的变化：薄膜晶体管; 包括薄膜晶体管的电路装置; 包括薄膜晶体管的液晶显示器; 以及包括电路装置的液晶显示器。解决方案：薄膜半导体器件包括玻璃衬底51，设置在衬底上的非晶硅膜53，在非晶硅膜上结晶的多个细长晶体31和具有活性的薄膜晶体管层11布置在晶粒上。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009152546A Method and apparatus for optical treatment 审中-公开
标题翻译：光学治疗方法与装置
公开(公告)号：JP2009152546A
公开(公告)日：2009-07-09
申请号：JP2008267594
申请日：2008-10-16
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： IDE TETSUYA
IPC分类号： H01L21/265 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for optical treatment capable of uniformly heating a semiconductor film having impurities introduced to uniformly activate the impurities and recrystallize a region having the impurities introduced.
SOLUTION: The semiconductor film formed on a light-transmitting substrate, a gate insulation film formed on the semiconductor film and a gate electrode formed on the gate insulation film are provided. The method of optical treatment of the semiconductor film having the impurities introduced using the gate electrode as a mask is characterized in that the semiconductor film is thermally treated by continuously irradiating excimer laser pulses for 180 ns or longer from the rear of the light-transmitting substrate through the substrate to the semiconductor film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于光学处理的方法和装置，其能够均匀加热具有引入的杂质的半导体膜以均匀地活化杂质并重结晶引入了杂质的区域。解决方案：提供形成在透光基板上的半导体膜，形成在半导体膜上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。使用栅电极作为掩模引入的杂质的半导体膜的光学处理方法的特征在于，通过从透光性基板的后方连续照射约180ns以上的准分子激光脉冲进行热处理，通过衬底到半导体膜。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009076678A Heat treatment apparatus and heat treatment method 审中-公开
标题翻译：热处理设备和热处理方法
公开(公告)号：JP2009076678A
公开(公告)日：2009-04-09
申请号：JP2007244299
申请日：2007-09-20
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： SASAKI ATSUSHI
IPC分类号： H01L21/265 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment apparatus and a heat treatment method, which uniformly heat-treat a semiconductor layer including impurity, and to provide a method of manufacturing a semiconductor apparatus, which uses heat treatment equipment.
SOLUTION: The heat treatment apparatus and method include a molten metal, a means irradiating the molten metal with light and a means holding a workpiece so that at least a part of the workpiece is brought into contact with the molten metal. The molten metal is heated by irradiating the molten metal with light by the means irradiating light. Then, the workpiece is heat-treated with the heated molten metal as a heating medium.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种热处理装置和热处理方法，其均匀地热处理包括杂质的半导体层，并提供使用热处理设备的半导体装置的制造方法。解决方案：热处理装置和方法包括熔融金属，用光照射熔融金属的装置和夹持工件的装置，使得至少一部分工件与熔融金属接触。通过用照射光的装置用光照射熔融金属来加热熔融金属。然后，用加热的熔融金属作为加热介质对工件进行热处理。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008311425A Method of forming light-absorptive cap film, method of crystallizing semiconductor film and method of manufacturing thin-film transistor 审中-公开
标题翻译：形成光吸收膜片的方法，半导体膜的结晶方法和制造薄膜晶体管的方法
公开(公告)号：JP2008311425A
公开(公告)日：2008-12-25
申请号：JP2007157765
申请日：2007-06-14
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： AZUMA KAZUFUMI
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a light-absorptive cap film being crystallized with large particle diameter, a method of crystallizing a semiconductor film and a method of manufacturing a thin-film transistor.
SOLUTION: The method of forming a light-absorptive cap film according to one embodiment forms a light-absorptive cap film composed of a light-absorptive oxide silicon film containing an oxygen loss having a heat accumulating effect for laser crystallization. The forming method has a step of executing reactive sputtering in an oxygen partial pressure atmosphere to form the light-absorptive oxide silicon film containing the oxygen loss above the semiconductor film while using a dioxide silicon target.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成具有大粒径结晶的吸光性帽膜的方法，半导体膜的结晶方法和薄膜晶体管的制造方法。解决方案：根据一个实施方案的形成吸光帽膜的方法形成由含有具有用于激光结晶的蓄热效果的氧损失的吸光氧化硅膜构成的吸光帽膜。成型方法具有在氧分压气氛中进行反应溅射的步骤，以在使用二氧化硅靶的同时形成含有半导体膜上方的氧损失的吸光氧化硅膜。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008305939A Forming method of polycrystal semiconductor film, thin-film transistor, and manufacturing method of same thin-film transistor 审中-公开
标题翻译：多晶半导体膜，薄膜晶体管的形成方法和同一薄膜晶体管的制造方法
公开(公告)号：JP2008305939A
公开(公告)日：2008-12-18
申请号：JP2007151158
申请日：2007-06-07
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： IGA DAISUKE , TANIGUCHI YUKIO
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： H01L21/02675 , B23K26/066 , H01L21/02422 , H01L21/02532 , H01L21/02609
摘要： PROBLEM TO BE SOLVED: To provide a forming method of a polycrystal semiconductor film which can prevent the generation of the short-circuit performed between two adjacent TFTs to each other surely. SOLUTION: In the forming method of the polycrystal semiconductor film subjected to the crystal growth performed along a first direction on an insulating substrate, crystal grains (15a) subjected to the crystal growth performed in a first sense (Fas, Faf) of the first direction and crystal grains (15b) subjected to the crystal growth performed in a second inverse sense (Fbs, Fbf) to the first sense (Fas, Faf) of the first direction are so controlled on the insulating substrate with respect to their crystal growths that the impingements performed between the crystal grains of the sense (Faf) and the crystal grains of the sense (Fbf) which are present in a plurality of spaced regions in the second direction orthogonal to the first direction occur earlier than the impingements performed between the crystal grains of the sense (Fas) and the crystal grains of the sense (Fbs) which are present in a plurality of other spaced regions in the second direction orthogonal to the first direction. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种多晶半导体膜的形成方法，其可以防止两个相邻的TFT彼此之间产生短路。解决方案：在绝缘基板上沿着第一方向进行晶体生长的多晶半导体膜的形成方法中，在第一感（Fas，Faf）上进行晶体生长的晶粒（15a）第一方向的第一方向和第一方向的第二反射（Fbs，Fbf）到第一感测（Fas，Faf）的晶体生长的晶粒（15b）相对于其晶体被如此地控制在绝缘基板上存在于与第一方向正交的第二方向上的多个间隔区域中存在感测晶体（Faf）和感测晶粒（Fbf）之间的冲击的冲击的发生早于在第一方向之间执行的冲击存在于与第一方向正交的第二方向上的多个其它间隔区域中的感测的晶粒（Fas）和感测晶体（Fbs）。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008300868A Partially fabricated item of semiconductor device, and method for crystallizing amorphous semiconductor layer of it 审中-公开
标题翻译：半导体器件的部分制造方法和用于晶体管非晶半导体层的方法
公开(公告)号：JP2008300868A
公开(公告)日：2008-12-11
申请号：JP2008200537
申请日：2008-08-04
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： KIMURA YOSHINOBU , MATSUMURA MASAKIYO , HIRAMATSU MASAHITO , NISHITANI MIKIHIKO , JUMONJI MASAYUKI , NAKANO FUMIKI
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a partially fabricated item of a semiconductor device, for improving the electric characteristics of the semiconductor device, and a method for crystallizing the semiconductor layer of it.
SOLUTION: The method for crystallizing the amorphous semiconductor layer of the partially fabricated item of the semiconductor device includes a process where laser light with radiation intensity distribution having temperature gradient is radiated as laser light for crystallization, to the amorphous semiconductor layer through a insulating layer and a nitrogen-containing layer; a process where the nitrogen-containing layer absorbs at least a part of the incident laser beam and storing the heat; a process where the laser beam of the radiation intensity distribution having the temperature gradient is radiated to a region of the amorphous semiconductor layer to melt the region; a process where the heat stored in the thermal storage process acts as a heat source to reduce cooling rate at the time of cooling after melting; a process where the laser light radiation process is performed twice or more.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供半导体器件的部分制造品，用于改善半导体器件的电特性，以及用于使其半导体层结晶的方法。解决方案：半导体器件的部分制造物品的非晶半导体层的结晶方法包括将具有温度梯度的辐射强度分布的激光作为用于结晶的激光照射到非晶半导体层的工艺，通过绝缘层和含氮层; 其中所述含氮层吸收所述入射激光束的至少一部分并储存热量的过程; 将具有温度梯度的辐射强度分布的激光束照射到非晶半导体层的区域以熔化该区域的过程; 存储在热存储过程中的热作为热源以降低熔化后的冷却时的冷却速度的过程; 进行两次以上的激光照射处理的处理。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008294460A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008294460A
公开(公告)日：2008-12-04
申请号：JP2008182518
申请日：2008-07-14
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： JUMONJI MASAYUKI , MATSUMURA MASAKIYO , KIMURA YOSHINOBU , NISHITANI MIKIHIKO , HIRAMATSU MASAHITO , TANIGUCHI YUKIO , NAKANO FUMIKI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To achieve crystallization with a desired crystal grain size in a selected region of a semiconductor layer.
SOLUTION: A beam profile modulation section is disposed between the substrate of a moving stage and a laser beam source, the beam profile of a laser beam on the substrate surface is modulated so as to match a preset target, the semiconductor layer on the substrate is irradiated with the modulated laser beam, and this allows the crystal to be grown in the lateral direction to achieve crystallization with the desired crystal grain size.
COPYRIGHT: (C)2009,JPO&INPIT

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