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    • 87. 发明专利
    • DE1592886A1
    • 1971-09-09
    • DE1592886
    • 1967-09-18
    • GEN ELECTRIC CO LTD
    • WILLIAM BRANDER ROBET
    • C09K11/65C30B19/04H01L33/34C09K1/50
    • 1,141,251. Luminescent materials. GENERAL ELECTRIC CO. Ltd. 4 Sept., 1967 [19 Sept., 1966], No. 41812/66. Heading C4S. A luminescent material excited by U.V. radiation, cathode-rays, X-rays or an applied voltage, consists of SiC of N-type conductivity containing impurities including a first element imparting N-type conductivity to the SiC, oxygen and a Group IIIA element imparting P-type conductivity, the atomic proportion of the first element preferably N, P, As, Sb or Bi, being greater than that of the Group III A element. To form a P-N junction, crystals of SiC containing N, O and B are epitaxially deposited on a P-type SiC crystal from a vapour produced by melting Si with B and silica in a graphite crucible in a N 2 atmosphere as described in Specification 1,099,637. Crystals may be grown on an induction heated SiC substrate in a mixture of H 2 ; N 3 ; trichlorosilane; hexane or benzene; diborane; O 2 or H 2 O and an ether or ketone. If powdered material is required, vapour deposition may be on to graphite, W or Mo substrate from which it is removed and ground. Alternatively, the impurities may be introduced into SiC powder by diffusion. The material is used in Hg vapour discharge lamps, C.R.T.'s and X-ray screens, for marking photographic film and as an electroluminescent light source for digital display when contacts of Au-Ta and Au-Ta-Al are provided on the crystal.