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81. 发明授权

US07265406B2 Capacitor with conducting nanostructure 有权
标题翻译：具有导电纳米结构的电容器
公开(公告)号：US07265406B2
公开(公告)日：2007-09-04
申请号：US11125567
申请日：2005-05-09
申请人： Scot A. Kellar , Sarah E. Kim
发明人： Scot A. Kellar , Sarah E. Kim
IPC分类号： H01L27/108
CPC分类号： H01L28/84 , B82Y10/00 , G11C13/0033 , G11C13/025 , G11C2213/16 , G11C2213/81 , H01G4/008 , H01G4/33 , H01L27/0805 , H01L27/1085 , Y10S977/70 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/902 , Y10S977/963 , Y10T428/24802
摘要： The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric. The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.
摘要翻译：本发明公开了一种提供基板的方法，在衬底上形成下导体; 在下导体上形成导电纳米结构; 在导电纳米结构上形成薄的电介质; 以及在所述薄电介质上形成上导体。本发明还公开了一种包括基板的装置; 位于衬底上方的下导体; 位于下导体上的导电纳米结构; 位于导电纳米结构之上的薄电介质; 以及位于薄电介质上方的上导体。

82. 发明授权

US07157990B1 Radio frequency device and method using a carbon nanotube array 有权
标题翻译：射频装置和使用碳纳米管阵列的方法
公开(公告)号：US07157990B1
公开(公告)日：2007-01-02
申请号：US10850152
申请日：2004-05-21
申请人： John Douglas Adam , Robert Miles Young
发明人： John Douglas Adam , Robert Miles Young
IPC分类号： H03H9/46 , H03H9/52 , H03H9/24
CPC分类号： H03H9/02259 , H03H9/2405 , H03H9/505 , H03H2009/02488 , Y10S977/723 , Y10S977/724 , Y10S977/742 , Y10S977/932
摘要： A radio frequency (RF) filter includes a substrate, first and second dielectric layers formed on first and second portions of the substrate, a ground plane formed on a third portion of said substrate, a carbon nanotube array, and first and second electrodes. The third portion of the substrate includes, at least in part, the area between the first and second portions thereof. The carbon nanotube array is formed on a portion of said ground plane between the first and second dielectric layers. The first and second electrodes are formed on the first and second dielectric layers, such that an RF signal may be input to and output from the carbon nanotube array via the first and second signal guides. A third electrode is disposed over the carbon nanotube array and is used to voltage bias the array.
摘要翻译：射频（RF）滤波器包括衬底，形成在衬底的第一和第二部分上的第一和第二电介质层，形成在所述衬底的第三部分上的接地平面，碳纳米管阵列以及第一和第二电极。衬底的第三部分至少部分地包括其第一和第二部分之间的区域。在第一和第二电介质层之间的所述接地平面的一部分上形成碳纳米管阵列。第一和第二电极形成在第一和第二电介质层上，使得RF信号可以经由第一和第二信号引导件输入到碳纳米管阵列并从碳纳米管阵列输出。第三电极设置在碳纳米管阵列上方并用于对阵列施加偏压。

83. 发明申请

US20040137704A1 Method of manufacturing memory with nano dots 有权
标题翻译：用纳米点制造记忆的方法
公开(公告)号：US20040137704A1
公开(公告)日：2004-07-15
申请号：US10743377
申请日：2003-12-23
发明人： In-Sook Kim , Sun-Ae Seo , In-Kyeong Yoo , Soo-Hwan Jeong
IPC分类号： H01L021/336 , H01L021/3205 , H01L021/4763 , H01L021/00
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/7881 , H01L29/792 , Y10S977/723 , Y10S977/774
摘要： A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.
摘要翻译：利用纳米点制造存储器的方法包括在形成源极和漏极的衬底上依次沉积第一绝缘层，电荷存储层，牺牲层和金属层，在所得结构上形成多个孔通过阳极氧化金属层并氧化通过孔露出的牺牲层的部分，通过去除氧化的金属层将电荷存储层图案化成具有纳米点，并且使用氧化的牺牲层蚀刻牺牲层和电荷存储层作为掩模，并且去除氧化的牺牲层，在图案化的电荷存储层上沉积第二绝缘层和栅电极，并且将第一绝缘层，图案化电荷存储层，第二绝缘层和栅电极图案化，以用于形成具有均匀分布的纳米级存储节点的存储器的预定形状。

84. 发明申请

US20030207575A1 Device isolation process flow for ARS system 审中-公开
公开(公告)号：US20030207575A1
公开(公告)日：2003-11-06
申请号：US10459177
申请日：2003-06-10
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/149 , H01L21/764 , Y10S977/723
摘要： A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

85. 发明申请

US20030206445A1 Flash memory with nanocrystalline silicon film floating gate 失效
标题翻译：闪存与纳米晶硅薄膜浮栅
公开(公告)号：US20030206445A1
公开(公告)日：2003-11-06
申请号：US10453324
申请日：2003-06-03
申请人： Micron Technology, Inc.
发明人： Leonard Forbes
IPC分类号： G11C016/04
CPC分类号： H01L29/7881 , H01L29/42332 , H01L29/7885 , Y10S438/962 , Y10S977/723 , Y10S977/763
摘要： A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors wherein the floating gate is fabricated using a conductive layer of nanocrystalline silicon particles. Each nanocrystalline silicon particle has a diameter of about 10 null to 1000 null. The nanocrystalline silicon particles are in contact such that a charge stored on the floating gate is shared between the particles. The floating gate has a reduced electron affinity to allow for data erase operations using lower voltages.
摘要翻译：描述了具有使用热电子注入来存储数据的存储单元的存储器。通过电子隧道扫描数据。存储单元被描述为浮栅晶体管，其中浮栅是使用纳米晶硅颗粒的导电层制造的。每个纳米晶硅颗粒的直径为约至Å。纳米晶硅颗粒接触，使得存储在浮动栅极上的电荷在颗粒之间共享。浮动栅极具有降低的电子亲和力，以允许使用较低电压的数据擦除操作。

86. 发明授权

US06621096B2 Device isolation process flow for ARS system 有权
公开(公告)号：US06621096B2
公开(公告)日：2003-09-16
申请号：US09860524
申请日：2001-05-21
申请人： Heon Lee , Chung-Ching Yang , Peter Hartwell
发明人： Heon Lee , Chung-Ching Yang , Peter Hartwell
IPC分类号： H01L2906
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/149 , H01L21/764 , Y10S977/723
摘要： A device isolation process flow for an atomic resolution storage (ARS) system inserts device isolation into a process flow of the ARS system so that diodes may be electrically insulated from one another to improve signal to noise ratio. In addition, since most harsh processing is done prior to depositing a phase change layer, which stores data bits, process damage to the phase change layer may be minimized.

87. 发明授权

US5543378A Carbon nanostructures encapsulating palladium 失效
标题翻译：封装钯的碳纳米结构
公开(公告)号：US5543378A
公开(公告)日：1996-08-06
申请号：US393964
申请日：1995-02-24
申请人： Ying Wang
发明人： Ying Wang
IPC分类号： B01J21/18 , B01J23/44 , C01B31/02 , A61K33/24 , A61K33/44 , C01B31/00
CPC分类号： B82Y30/00 , B01J21/18 , B01J23/44 , B82Y40/00 , C01B31/0226 , C01B31/0293 , Y10S423/39 , Y10S423/40 , Y10S977/723 , Y10S977/742 , Y10S977/744 , Y10S977/763 , Y10S977/765 , Y10S977/776
摘要： This invention relates to a composition, comprising a carbon nanostructure having a palladium crystallite encapsulated therein; and more particularly, to worm-like carbon nanostructures attached to a carbon cluster, the worm-like nanostructures being comprised of a plurality of connecting sections of carbon tubes terminating in an end portion which encapsulates a palladium crystallite within its internal cavity.
摘要翻译：本发明涉及包含其中封装有钯微晶的碳纳米结构的组合物; 更具体地，涉及连接到碳簇的蠕虫状碳纳米结构，所述蠕虫状纳米结构由多个碳管连接部分组成，所述连接部分终止于在其内部空腔内封装钯微晶的端部。

88. 发明公开

EP3098865A1 METHOD FOR FABRICATION A SUPERCONDUCTING INTEGRATED CIRCUIT 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER SUPRALEITEENEN INTEGRIERTEN SCHALTUNG
公开(公告)号：EP3098865A1
公开(公告)日：2016-11-30
申请号：EP16179696.6
申请日：2010-02-25
申请人： D-Wave Systems Inc.
发明人： Ladizinsky, Eric , Rose, Geordie , Hilton, Jeremy , Dantsker, Eugene , Oh, Travis
IPC分类号： H01L39/24
CPC分类号： H01L27/18 , B82Y10/00 , G06N99/002 , H01L28/24 , H01L39/025 , H01L39/223 , H01L39/2406 , H01L39/2493 , Y10S977/707 , Y10S977/723 , Y10S977/943
摘要： Various techniques permitting fabrication of superconducting integrated circuits and structures including Josephson junctions, which may be useful in quantum computers, are disclosed. For instance, a superconductor/insulator/superconductor trilayer structure may be patterned by etching the upper superconductor layer using a hard mask which is lithographically patterned using a photoresist mask.
摘要翻译：公开了允许制造可能在量子计算机中有用的超导集成电路和包括约瑟夫逊结的结构的各种技术。例如，可以使用使用光致抗蚀剂掩模进行光刻图案化的硬掩模蚀刻上超导体层来对超导体/绝缘体/超导体三层结构进行图案化。

89. 发明公开

EP2815268A2 ECRAN D'AFFICHAGE ET SON PROCEDE DE FABRICATION 有权
标题翻译：显示屏和及其制造方法
公开(公告)号：EP2815268A2
公开(公告)日：2014-12-24
申请号：EP13712924.3
申请日：2013-02-14
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： SIMONATO, Jean-Pierre , CARELLA, Alexandre , CELLE, Caroline
IPC分类号： G02F1/01 , G09F9/30 , G02F1/13
CPC分类号： G02F1/0147 , B32B17/10477 , B82Y15/00 , G02F1/009 , G02F1/132 , G02F2201/12 , Y10S977/723 , Y10S977/762 , Y10S977/83
摘要： The invention relates to a display screen and its manufacturing process. The display screen of the invention comprises: a substrate made of a plastic; at least one transparent heating element; and at least one thermochromic compound, and is characterized in that the at least one transparent heating element comprises at least one optionally functionalized metal nanowire. The invention in particular has applications in the electronics industry.

90. 发明公开

EP1936711A3 Printing method for high performance electronic devices 有权
标题翻译：打印和高性能的电子设备
公开(公告)号：EP1936711A3
公开(公告)日：2010-12-15
申请号：EP07123988.3
申请日：2007-12-21
申请人： Palo Alto Research Center Incorporated
发明人： Chabinyc, Michael L. , Wong, William S.
IPC分类号： H01L51/00 , H01L51/05
CPC分类号： H01L51/0005 , B82Y10/00 , H01L51/0012 , H01L51/0048 , H01L51/0545 , Y10S977/723 , Y10S977/786
摘要： A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor.

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