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81. 发明公开

EP0500553A4 FIELD EMISSION DEVICE HAVING PREFORMED EMITTERS 失效
标题翻译：具有预制发射体的场发射装置
公开(公告)号：EP0500553A4
公开(公告)日：1993-01-27
申请号：EP90914295
申请日：1990-09-17
申请人： MOTOROLA, INC.
发明人： CHASON, MARC, KENNETH
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12
CPC分类号： H01J9/025 , H01J1/3042 , H01J2201/30403

82. 发明公开

EP0351110A1 Method of manifacturing a cold cathode, field emission device and a field emission device manufactured by the method 失效
标题翻译：一种用于制造冷阴极，用这种方法制造的场致发射和场致发射装置的装置处理。
公开(公告)号：EP0351110A1
公开(公告)日：1990-01-17
申请号：EP89306659.7
申请日：1989-06-30
申请人： THORN EMI plc
发明人： Wales, James Lance Sander
IPC分类号： H01J9/02 , H01J1/30
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403
摘要： A method is provided for manufacturing a cold cathode field emission device. The method comprises the steps of:
providing a layer (11) of anodised alumina having a plurality of elongate pores (12) which are substantially orthogonal to major surfaces (13, 13′) of the layer (11);
filling said pores completely with an electron emissive material, and then removing at least a part of said layer to form a defined surface (13˝) of said layer (11) and to produce a plurality of electron emissive spikes (16) extruding from and at an angle to said defined surface (13˝) wherein a plurality of electron emissive structures (17) are produced, each structure (17) comprising a plurality of electron emissive spikes (16) inclined to one another.
摘要翻译：提供一种用于制造冷阴极场发射器件的方法。该方法包括以下步骤：提供具有细长孔（12），其基本上垂直于层（11）的主表面（13，13分钟）的多元阳极化氧化铝层（11）; 填充所述孔完全地在电子发射材料呼叫，然后除去至少所述层的一部分以形成一个限定在所述层的表面（13秒）（11）和，以产生电子发射尖峰的多个（16）从挤出处的角度限定在所述表面（13秒）其中电子发射结构的多个（17）的生产，每个结构（17）包括互相倾斜电子发射尖峰的多个（16）。

83. 发明授权

US09005407B2 Method of fabricating composite field emission source 有权
标题翻译：复合场致发射源的制作方法
公开(公告)号：US09005407B2
公开(公告)日：2015-04-14
申请号：US13317955
申请日：2011-10-31
申请人： Jian-Min Jeng , Jyi-Tsong Lo , Wen-Ching Shih , Wei-Lung Tasi
发明人： Jian-Min Jeng , Jyi-Tsong Lo , Wen-Ching Shih , Wei-Lung Tasi
IPC分类号： C23C16/26 , H01J9/02 , C23C16/455 , H01J1/304
CPC分类号： H01J9/025 , C23C16/26 , C23C16/45523 , H01J1/304 , H01J2201/30403 , H01J2201/30461
摘要： A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-shaped structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-shaped structures on the petal-shaped structure. Therefore, the composite field emission source with high strength and nano coral-shaped structures can be obtained, whereby improving the effect and life of electric field emission.
摘要翻译：提供了一种制造复合场致发射源的方法。通过使用RF磁控溅射进行成膜处理的第一阶段，以在纳米结构膜为由多个纳米石墨壁构成的花瓣状结构的基板上形成纳米结构膜。之后，进行第二阶段的成膜过程，以增加纳米结构膜上的碳积累量，从而在花瓣状结构上生长多个纳米珊瑚状结构。因此，可以获得具有高强度和纳米珊瑚结构的复合场发射源，从而提高电场发射的效果和寿命。

84. 发明申请

US20120090986A1 Method of fabricating composite field emission source 审中-公开
标题翻译：复合场致发射源的制作方法
公开(公告)号：US20120090986A1
公开(公告)日：2012-04-19
申请号：US13317955
申请日：2011-10-31
申请人： Jian-Min Jeng , Jyi-Tsong Lo , Wen-Ching Shih , Wei-Lung Tasi
发明人： Jian-Min Jeng , Jyi-Tsong Lo , Wen-Ching Shih , Wei-Lung Tasi
IPC分类号： C23C14/35 , B82Y40/00
CPC分类号： H01J9/025 , C23C16/26 , C23C16/45523 , H01J1/304 , H01J2201/30403 , H01J2201/30461
摘要： A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-like structures on the petal-like structure. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.
摘要翻译：提供了一种制造复合场致发射源的方法。通过使用RF磁控管溅射进行成膜处理的第一阶段，以在纳米结构膜为由多个纳米石墨壁构成的花瓣状结构的基板上形成纳米结构膜。之后，进行第二阶段的成膜过程，以增加纳米结构膜上的碳积累量，从而在花瓣状结构上生长多个纳米珊瑚状结构。因此，可以获得具有高强度和纳米珊瑚状结构的复合场发射源，从而提高电场发射的效果和寿命。

85. 发明申请

US20050282301A1 Structure and method for field emitter tips 审中-公开
公开(公告)号：US20050282301A1
公开(公告)日：2005-12-22
申请号：US11209271
申请日：2005-08-23
申请人： Terry Gilton , Paul Morgan
发明人： Terry Gilton , Paul Morgan
IPC分类号： H01J1/05 , H01J1/14 , H01J1/304 , H01J1/38 , H01J1/48 , H01J9/02 , H01J9/38 , H01J19/06 , H01L21/00
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2329/00
摘要： Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.

86. 发明授权

US06933665B2 Structure and method for field emitter tips 失效
标题翻译：场发射器尖端的结构和方法
公开(公告)号：US06933665B2
公开(公告)日：2005-08-23
申请号：US10193016
申请日：2002-07-09
申请人： Terry L. Gilton , Paul A. Morgan
发明人： Terry L. Gilton , Paul A. Morgan
IPC分类号： H01J1/05 , H01J1/14 , H01J1/304 , H01J1/38 , H01J1/48 , H01J9/02 , H01J9/38 , H01J19/06 , H01L21/00
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2329/00
摘要： Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.
摘要翻译：提供了用于垂直几何阵列的改进的方法和结构，其可以用作发射器尖端，作为围绕场发射器尖端的自对准栅极结构，或者作为平板显示器的一部分。本发明在更简化的过程中提供了在发射极尖端形成中的受控尺寸。本发明还提供了一种更有效的方法来控制场致发射器件中的栅极与发射极尖端的接近。本发明的新颖方法包括以图案化的方式将掺杂剂注入到硅衬底中并以受控的方式对硅衬底进行阳极氧化，从而在硅衬底中形成更重掺杂的区域以形成多孔硅区域。

87. 发明申请

US20050040752A1 Triode structure field emission display device using carbon nanotubes and method of fabricating the same 失效
标题翻译：使用碳纳米管的三极结构场致发射显示装置及其制造方法
公开(公告)号：US20050040752A1
公开(公告)日：2005-02-24
申请号：US10949524
申请日：2004-09-27
申请人： Hang-woo Lee , Sang-jin Lee , Shang-hyeun Park
发明人： Hang-woo Lee , Sang-jin Lee , Shang-hyeun Park
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01J1/02 , H01J1/00 , H01J9/04 , H01J9/12 , H01J21/10
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J2201/30403 , Y10S977/952
摘要： A field emission display device and a method of fabricating the same are provided. The field emission display device includes a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer. An alignment error between the gate electrode and the cathode is removed, and carbon nanotube paste is prevented from remaining during development, thereby preventing current leakage and short circuit between the electrodes and diode emission. Accordingly, the performance of the field emission display device can be improved.
摘要翻译：提供场发射显示装置及其制造方法。场发射显示装置包括基板，透明阴极层，绝缘层，栅电极，电阻层和碳纳米管。透明阴极层沉积在衬底上。绝缘层形成在阴极层上并具有使阴极层暴露的良好状态。栅电极形成在绝缘层上并且具有对应于阱的开口。电阻层形成为围绕栅电极的表面和开口和阱的内壁，以阻挡紫外线。碳纳米管场发射源位于暴露的阴极层上。除去栅电极和阴极之间的对准误差，并且防止在显影期间保留碳纳米管糊，从而防止电极之间的电流泄漏和短路以及二极管发射。因此，可以提高场发射显示装置的性能。

88. 发明申请

US20040245910A1 Field emission backlight for liquid crystal televisions 失效
标题翻译：液晶电视场发射背光
公开(公告)号：US20040245910A1
公开(公告)日：2004-12-09
申请号：US10754176
申请日：2004-01-09
申请人： Electrovac Fabrikation Elektrotechnischer Spezialartikel GmbH , LG.Philips Displays Netherlands B.V.
发明人： Xinhe Tang , Ernst Hammel , Daniel Den Engelsen , Edward Cosman , Cornelis Kortekaas
IPC分类号： H01J001/62
CPC分类号： H01J9/247 , H01J9/025 , H01J9/241 , H01J63/06 , H01J2201/30403 , H01J2201/30469
摘要： A field emission device for use as a backlight of a liquid crystal display comprises a conductive anode having a light-emitting layer and a cathode separated from the anode by a spacer. The cathode comprises nanofiber electron emitters. For example, the nanofiber electron emitters comprise a substrate, a conductive film adhered to the substrate and a plurality of isolated, hemispheroidal nanofiber clusters that are capable of emitting electrons at high current density and low field strength.
摘要翻译：用作液晶显示器的背光源的场致发射器件包括具有发光层的导电阳极和通过间隔件从阳极分离的阴极。阴极包括纳米纤维电子发射体。例如，纳米纤维电子发射体包括基底，粘附到基底的导电膜和能够以高电流密度和低场强发射电子的多个分离的半球状纳米纤维簇。

89. 发明授权

US06825596B1 Electron emitters with dopant gradient 失效
标题翻译：具有掺杂剂梯度的电子发射体
公开(公告)号：US06825596B1
公开(公告)日：2004-11-30
申请号：US08609354
申请日：1996-03-01
申请人： David A. Cathey
发明人： David A. Cathey
IPC分类号： H01J116
CPC分类号： H01J1/3044 , H01J1/3042 , H01J9/025 , H01J2201/30403 , Y10S148/116 , Y10S148/172 , Y10S438/978
摘要： Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
摘要翻译：电子发射体和制造具有杂质浓度梯度的发射体的方法，使得最高浓度的杂质位于发射体的顶点，朝向发射体的基底减小。该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

90. 发明授权

US06812480B2 Triode structure field emission display device using carbon nanotubes and method of fabricating the same 失效
标题翻译：使用碳纳米管的三极结构场致发射显示装置及其制造方法
公开(公告)号：US06812480B2
公开(公告)日：2004-11-02
申请号：US10347622
申请日：2003-01-22
申请人： Hang-woo Lee , Sang-jin Lee , Shang-hyeun Park
发明人： Hang-woo Lee , Sang-jin Lee , Shang-hyeun Park
IPC分类号： H01L2100
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J2201/30403 , Y10S977/952
摘要： A field emission display device and a method of fabricating the same are provided. The field emission display device includes a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer. An alignment error between the gate electrode and the cathode is removed, and carbon nanotube paste is prevented from remaining during development, thereby preventing current leakage and short circuit between the electrodes and diode emission. Accordingly, the performance of the field emission display device can be improved.
摘要翻译：提供场发射显示装置及其制造方法。场发射显示装置包括基板，透明阴极层，绝缘层，栅电极，电阻层和碳纳米管。透明阴极层沉积在衬底上。绝缘层形成在阴极层上并具有使阴极层暴露的良好状态。栅电极形成在绝缘层上并且具有对应于阱的开口。电阻层形成为围绕栅电极的表面和开口和阱的内壁，以阻挡紫外线。碳纳米管场发射源位于暴露的阴极层上。除去栅电极和阴极之间的对准误差，并且防止在显影期间保留碳纳米管糊，从而防止电极之间的电流泄漏和短路以及二极管发射。因此，可以提高场发射显示装置的性能。

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