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81. 发明授权

US4300138A Electric memory detector in an ECD driver 失效
标题翻译： ECD驱动器中的电存储检测器
公开(公告)号：US4300138A
公开(公告)日：1981-11-10
申请号：US92672
申请日：1979-11-09
申请人： Hiroshi Nakauchi , Katubumi Koyanagi , Hiroaki Kato , Yutaka Takafuji , Yasuhiko Inami , Hisashi Uede
发明人： Hiroshi Nakauchi , Katubumi Koyanagi , Hiroaki Kato , Yutaka Takafuji , Yasuhiko Inami , Hisashi Uede
IPC分类号： G01R13/40 , G09G3/06 , G09G3/16 , G06F3/14
CPC分类号： G01R13/407 , G09G3/06 , G09G3/16
摘要： In an electrochromic display comprising a back plate electrode, a plurality of display electrodes, and a reference electrode available for maintaining the potential of the respective display electrodes at a fixed value, there is provided a detector for sensing the counter electromotive force which is developed between the display electrodes and the reference electrode in a manner such that there is created a remarkable difference in the output voltage signal thereof between in the colored state and in the bleached state. Therefore, the output signal from the detector indicates whether the electrochromic display is held in the colored state or the bleached state.
摘要翻译：在包括背板电极，多个显示电极和可用于将各个显示电极的电位保持在固定值的参考电极的电致变色显示器中，提供了一种用于感测反电动势的检测器，显示电极和参考电极以在着色状态和漂白状态之间的输出电压信号产生显着差异的方式。因此，来自检测器的输出信号指示电致变色显示器是保持着色状态还是漂白状态。

82. 发明申请

US20110241006A1 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110241006A1
公开(公告)日：2011-10-06
申请号：US13132600
申请日：2009-08-25
申请人： Masahiro Mitani , Yutaka Takafuji
发明人： Masahiro Mitani , Yutaka Takafuji
IPC分类号： H01L29/786 , H01L33/16
CPC分类号： H01L27/1218 , G02F1/136209 , H01L27/1214 , H01L29/78633
摘要： Provided is a liquid crystal display device (1) comprising a substrate (2), a base coating film (3) disposed on the substrate (2), a base insulating film (4) disposed on the base coating film (3), and a semiconductor film (20) disposed on the base insulating film (4) and made of a polysilicon film. Below the semiconductor film (20), a light-shielding film (28) is formed, which is embedded in the base coating film (3).
摘要翻译：提供一种液晶显示装置（1），包括基板（2），设置在基板（2）上的基底涂膜（3），设置在基底涂膜（3）上的基底绝缘膜（4）设置在所述基底绝缘膜（4）上并由多晶硅膜制成的半导体膜（20）。在半导体膜（20）的下方形成有埋设在基底涂膜（3）中的遮光膜（28）。

83. 发明申请

US20110163297A1 Core-Shell-Shell Nanowire Transistor 有权
标题翻译：核壳壳纳米线晶体管
公开(公告)号：US20110163297A1
公开(公告)日：2011-07-07
申请号：US13050750
申请日：2011-03-17
申请人： Mark A. Crowder , Yutaka Takafuji
发明人： Mark A. Crowder , Yutaka Takafuji
IPC分类号： H01L29/06 , H01L29/775 , B82Y99/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/068 , H01L29/42384 , H01L29/42392 , H01L29/66742 , H01L29/6675 , H01L29/78621 , H01L29/78696 , H01L51/0048 , H01L51/055 , Y10S438/962 , Y10S977/773 , Y10S977/774 , Y10S977/938
摘要： A fabrication method is provided for a core-shell-shell (CSS) nanowire transistor (NWT). The method provides a cylindrical CSS nanostructure with a semiconductor core, an insulator shell, and a conductive shell. The CSS nanostructure has a lower hemicylinder overlying a substrate surface. A first insulating film is conformally deposited overlying the CSS nanostructure and anisotropically plasma etched. Insulating reentrant stringers are formed adjacent the nanostructure lower hemicylinder. A conductive film is conformally deposited and selected regions are anisotropically plasma etched, forming conductive film gate straps overlying a gate electrode in a center section of the CSS nanostructure. An isotropically etching removes the insulating reentrant stringers adjacent the center section of the CSS nanostructure, and an isotropically etching of the conductive shell overlying the S/D regions is performed. A screen oxide layer is deposited over the CSS nanostructure. The source/drain (S/D) regions in end sections of the CS nanostructure flanking are doped.
摘要翻译：提供了用于核 - 壳 - 壳（CSS）纳米线晶体管（NWT）的制造方法。该方法提供了具有半导体芯，绝缘体壳和导电壳的圆柱形CSS纳米结构。 CSS纳米结构具有覆盖衬底表面的较低的半圆柱体。第一绝缘膜被保形地沉积在CSS纳米结构和各向异性等离子体蚀刻上。在纳米结构较低的半圆柱体附近形成绝缘折痕桁条。导电膜被共形沉积，并且选择的区域是各向异性等离子体蚀刻，在CSS纳米结构的中心部分形成覆盖栅电极的导电膜栅极带。各向同性蚀刻除去邻近CSS纳米结构的中心部分的绝缘折返桁条，并且执行覆盖S / D区域的导电壳体的各向同性蚀刻。屏幕氧化物层沉积在CSS纳米结构上。在CS纳米结构侧面的末端部分的源极/漏极（S / D）区域被掺杂。

84. 发明授权

US07919392B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07919392B2
公开(公告)日：2011-04-05
申请号：US12499939
申请日：2009-07-09
申请人： Yutaka Takafuji , Takashi Itoga
发明人： Yutaka Takafuji , Takashi Itoga
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L24/24 , H01L24/26 , H01L24/82 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/68359 , H01L2221/68363 , H01L2224/24226 , H01L2224/8319 , H01L2224/8385 , H01L2224/83894 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/04953 , H01L2924/07802 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , H01L2924/3025 , H01L2924/01014 , H01L2924/01022 , H01L2924/3512 , H01L2924/00
摘要： On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.
摘要翻译：在SOI衬底上形成氢离子注入部分，其中氢离子在BOX层（掩埋氧化物膜层）中分布，并形成单晶硅薄膜晶体管。然后，该SOI衬底与绝缘衬底接合。随后，通过进行热处理，在氢离子注入部分将SOI衬底切割，从而去除了SOI衬底的不必要部分。此外，残留在单晶硅薄膜晶体管上的BOX层通过蚀刻。由此，可以在不使用粘合剂的情况下从绝缘基板上的单晶硅薄膜器件进行。此外，可以提供没有表面损伤的半导体器件，并且包括薄而均匀的单晶硅薄膜。

85. 发明授权

US07659582B2 Active silicon device on a cleaved silicon-on-insulator substrate 有权
标题翻译：在绝缘体上的绝缘体基板上的有源硅器件
公开(公告)号：US07659582B2
公开(公告)日：2010-02-09
申请号：US11698558
申请日：2007-01-26
申请人： Steve Droes , Masao Moriguchi , Yutaka Takafuji
发明人： Steve Droes , Masao Moriguchi , Yutaka Takafuji
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a circuit in the Si active layer; forming a blocking mask over selected circuit areas; implanting H in the Si substrate; annealing; removing the blocking mask; in response to the H implanting, forming a cleaving plane in the Si substrate; bonding the circuit the top oxide layer to the carrier substrate; and, cleaving the Si substrate. More specifically, the cleaving plane is formed along a horizontal peak concentration (Rp) H layer in the Si substrate and along the buried oxide layer interface.
摘要翻译：提供氢（H）剥离的系统和方法用于将绝缘体上硅（SOI）制造的电路附着到载体衬底上。该方法包括：提供SOI衬底，其包括覆盖在Si衬底上的硅（Si）有源层和掩埋氧化物（BOX）层; 在Si有源层中形成电路; 在选定的电路区域上形成阻挡掩模; 在Si衬底中注入H; 退火; 去除阻挡掩模; 响应于H植入，在Si衬底中形成切割平面; 将电路的顶部氧化物层接合到载体衬底; 并切割Si衬底。更具体地说，切割平面沿着Si衬底中的水平峰值浓度（Rp）H层并且沿掩埋氧化物层界面形成。

86. 发明申请

US20090269907A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090269907A1
公开(公告)日：2009-10-29
申请号：US12499939
申请日：2009-07-09
申请人： Yutaka Takafuji , Takashi Itoga
发明人： Yutaka Takafuji , Takashi Itoga
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L24/24 , H01L24/26 , H01L24/82 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/68359 , H01L2221/68363 , H01L2224/24226 , H01L2224/8319 , H01L2224/8385 , H01L2224/83894 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/04953 , H01L2924/07802 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , H01L2924/3025 , H01L2924/01014 , H01L2924/01022 , H01L2924/3512 , H01L2924/00
摘要： On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.
摘要翻译：在SOI衬底上形成氢离子注入部分，其中氢离子在BOX层（掩埋氧化物膜层）中分布，并形成单晶硅薄膜晶体管。然后，该SOI衬底与绝缘衬底接合。随后，通过进行热处理，在氢离子注入部分将SOI衬底切割，从而去除了SOI衬底的不必要部分。此外，残留在单晶硅薄膜晶体管上的BOX层通过蚀刻。由此，可以在不使用粘合剂的情况下从绝缘基板上的单晶硅薄膜器件进行。此外，可以提供没有表面损伤的半导体器件，并且包括薄而均匀的单晶硅薄膜。

87. 发明授权

US07525530B2 Display device and scanning circuit testing method 有权
标题翻译：显示设备和扫描电路测试方法
公开(公告)号：US07525530B2
公开(公告)日：2009-04-28
申请号：US11124463
申请日：2005-05-05
申请人： Yutaka Takafuji , Katsunori Shirai , Akira Shibazaki
发明人： Yutaka Takafuji , Katsunori Shirai , Akira Shibazaki
IPC分类号： G09G3/36
CPC分类号： G01R31/318533 , G01R31/318505 , G09G3/006 , G09G3/3648 , G09G3/3674 , G09G3/3685 , G09G2310/0267 , G09G2310/0275 , G09G2310/0283 , G09G2310/0286 , G09G2330/12 , Y10S345/904
摘要： Each of a gate driver and a source driver periodically receives a clock signal and a start pulse, where the start pulse has a certain width and is shifted as shift data in the gate driver or source driver in synchronism with the clock signal. A logic circuit composed of an NAND gate and an inverter receives the start pulse and the shift data, the shift data being the output that is supplied after a predetermined delay from the last stage with respect to the shift direction. The output of the inverter is used to test scanning circuits. This provides a display device and a scanning circuit testing method, which enable the scanning circuits to be judged both surely and quickly, without increasing the area or complexity of the circuit.
摘要翻译：门驱动器和源极驱动器中的每一个周期性地接收时钟信号和起始脉冲，其中起始脉冲具有一定的宽度，并且与时钟信号同步地移位为栅极驱动器或源极驱动器中的移位数据。由NAND门和反相器组成的逻辑电路接收起始脉冲和移位数据，移位数据是从相对于移位方向的最后阶段的预定延迟之后提供的输出。逆变器的输出用于测试扫描电路。这提供了显示装置和扫描电路测试方法，其使得能够确定地和快速地判断扫描电路，而不增加电路的面积或复杂性。

88. 发明申请

US20070108523A1 Semiconductor device and fabrication method for the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20070108523A1
公开(公告)日：2007-05-17
申请号：US11646274
申请日：2006-12-28
申请人： Yasuyuki Ogawa , Yutaka Takafuji
发明人： Yasuyuki Ogawa , Yutaka Takafuji
IPC分类号： H01L27/12 , H01L29/04
CPC分类号： H01L27/1266 , H01L21/6835 , H01L23/544 , H01L24/24 , H01L24/26 , H01L24/82 , H01L24/83 , H01L27/1203 , H01L27/1214 , H01L29/78654 , H01L2221/68359 , H01L2221/68363 , H01L2223/54426 , H01L2223/54473 , H01L2224/24226 , H01L2224/8385 , H01L2224/83894 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01082 , H01L2924/01088 , H01L2924/04941 , H01L2924/07802 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00
摘要： In a semiconductor device including a monocrystalline thin film transistor 16a that has been formed on a monocrystalline Si wafer 100 and then is transferred to a insulating substrate 2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer 100 so as to create a field oxide film (SiO2 film) 104, and a marker 107 is formed on the field oxide film 104. With this structure, alignment of components may be performed based on a gate electrode 106 upon or after the transfer step.
摘要翻译：在包括单晶硅晶片100上形成的单晶硅晶体管16a的半导体器件中，然后转移到绝缘基片2上，相对于单晶Si晶片100的元件隔离区域进行LOCOS氧化以形成场氧化膜（SiO 2膜）104，在场氧化膜104上形成标记物107。利用这种结构，可以在传送步骤之后或之后基于栅电极106执行部件的对准。

89. 发明授权

US07205204B2 Semiconductor device and fabrication method for the same 失效
公开(公告)号：US07205204B2
公开(公告)日：2007-04-17
申请号：US10963817
申请日：2004-10-14
申请人： Yasuyuki Ogawa , Yutaka Takafuji
发明人： Yasuyuki Ogawa , Yutaka Takafuji
IPC分类号： H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L23/544 , H01L24/24 , H01L24/26 , H01L24/82 , H01L24/83 , H01L27/1203 , H01L27/1214 , H01L29/78654 , H01L2221/68359 , H01L2221/68363 , H01L2223/54426 , H01L2223/54473 , H01L2224/24226 , H01L2224/8385 , H01L2224/83894 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01082 , H01L2924/01088 , H01L2924/04941 , H01L2924/07802 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00
摘要： In a semiconductor device including a monocrystalline thin film transistor 16a that has been formed on a monocrystalline Si wafer 100 and then is transferred to a insulating substrate 2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer 100 so as to create a field oxide film (SiO2 film) 104, and a marker 107 is formed on the field oxide film 104. With this structure, alignment of components may be performed based on a gate electrode 106 upon or after the transfer step.

90. 发明授权

US07071912B2 Display panel drive circuit and display panel 有权
公开(公告)号：US07071912B2
公开(公告)日：2006-07-04
申请号：US10631731
申请日：2003-08-01
申请人： Hongyong Zhang , Yosuke Tsukamoto , Yutaka Takafuji , Yasushi Kubota
发明人： Hongyong Zhang , Yosuke Tsukamoto , Yutaka Takafuji , Yasushi Kubota
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G3/3677
摘要： A display panel drive circuit and a display panel are provided which are simple in structure but free from initial failure leading to impossibility to perform scanning. The display panel drive circuit of the present invention is structured such that thin film transistors constituting a signal input circuit connected to a circuit outside the display panel are formed in a structure having a dielectric breakdown strength higher than those of thin film transistors constituting other circuits. Specifically, countermeasures are taken by transistor formation in multi-gate structure, gate width broadening, resistance insertion between an input terminal and a transistor or the like. In the present invention, the circuit to which signals are externally inputted or thin film transistors of the same circuit is structured to withstand high voltage, thereby preventing the transistors from being deteriorated by high voltage and occurrence of initial failure while being simple in structure.

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