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81. 发明申请

US20070262323A1 Semiconductor light emitting element array illuminator using the same 有权
标题翻译：使用其的半导体发光元件阵列照明器
公开(公告)号：US20070262323A1
公开(公告)日：2007-11-15
申请号：US11801258
申请日：2007-05-09
申请人： Masayuki Sonobe , Yukio Shakuda
发明人： Masayuki Sonobe , Yukio Shakuda
IPC分类号： H01L31/0312
CPC分类号： H01L27/156 , F21K9/232 , F21V3/061 , F21Y2115/10
摘要： A semiconductor light emitting element array includes a substrate made of SiC and having a first surface and a second surface opposite to the first surface. The array also includes a plurality of semiconductor light emitting elements supported by the first surface of the substrate. Each of the light emitting elements includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The second surface of the substrate serves as a light emitting surface, from which light produced by the light emitting elements is emitted out.
摘要翻译：半导体发光元件阵列包括由SiC制成并具有与第一表面相对的第一表面和第二表面的基板。阵列还包括由衬底的第一表面支撑的多个半导体发光元件。每个发光元件包括n型半导体层，有源层和p型半导体层。衬底的第二表面用作发光表面，由发光元件产生的光被发射出去。

82. 发明申请

US20070257268A1 Semiconductor Light Emitting Device 有权
标题翻译：半导体发光装置
公开(公告)号：US20070257268A1
公开(公告)日：2007-11-08
申请号：US11662541
申请日：2005-09-12
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2224/24 , H01L2924/12044 , H01L2924/00
摘要： There is provided a highly reliable semiconductor light emitting device even in using for street lamps or traffic signals, which can be used in place of electric lamps or fluorescent lamps by protecting from surges such as static electricity or the like. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion by laminating semiconductor layers on a substrate so as to form a light emitting layer, by electrically separating the semiconductor lamination portion into a plurality, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or in parallel with wiring films (3). An inductor (8) absorbing surges is connected, in series, to the plurality of light emitting units (1) connected in series between electrode pads (4a) and (4b) connected to an external power source. For an example, the inductor (8) is formed by arranging the plurality of light emitting units (1) in a whirl shape.
摘要翻译：提供了一种高可靠性的半导体发光装置，即使用于路灯或交通信号灯，也可以通过防止诸如静电等的浪涌而代替电灯或荧光灯。通过在基板上层叠半导体层以形成发光层，通过将半导体层叠部分电分离成多个并通过提供一对形成半导体层叠部分而形成多个发光单元（1）的电极（19）和（20）。发光单元（1）分别与布线膜（3）串联和/或并联连接。吸收浪涌的电感器（8）串联连接到串联连接到连接到外部电源的电极焊盘（4a）和（4b）之间的多个发光单元（1）。例如，电感器（8）通过将多个发光单元（1）布置成旋转形状而形成。

83. 发明授权

US06168962A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US06168962A
公开(公告)日：2001-01-02
申请号：US09012193
申请日：1998-01-23
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21302
CPC分类号： H01L33/0095
摘要： Disclosed is a method of manufacturing a semiconductor light emitting device. Semiconductor overlying layers are formed on a substrate in a state of a wafer so that a light emitting area is provided therein. The semiconductor overlying layers includes first and second conductivity type layers. Part of the semiconductor overlying layers including the first conductivity type layer on a surface thereof is removed so as to expose part of the second conductivity type layer. Electrodes are formed, for each chip, respectively in connection with the surface of the first conductivity type layer and the surface of the exposed second conductivity type layer. The wafer is divided into individual chips. The exposed areas of the second conductivity type semiconductor layer is provided only part of a peripheral area of the chip so that the first conductivity type semiconductor layer is directly separated during dividing the wafer into individual chips. With such a method, when dividing a wafer into chips, the inefficiency of the space (etched areas do not contribute to light emission) is eliminated in etch-removing the semiconductor overlying layers at areas to be divided, thereby improving chip yield and hence reducing cost.
摘要翻译：公开了半导体发光器件的制造方法。在晶片的状态下在基板上形成半导体覆盖层，以便在其中提供发光区域。半导体覆盖层包括第一和第二导电类型层。除去包括其表面上的第一导电类型的半导体覆盖层的一部分，以暴露部分第二导电类型层。对于每个芯片，分别与第一导电类型层的表面和暴露的第二导电类型层的表面分别形成电极。晶片分为单个芯片。第二导电类型半导体层的暴露区域仅提供芯片的周边区域的一部分，使得在将晶片分成单个芯片期间，第一导电类型半导体层被直接分离。通过这样的方法，当将晶片分成芯片时，在要分割的区域上的半导体覆盖层的蚀刻去除中消除了空间（蚀刻区域对光发射没有贡献）的低效率，从而提高了芯片产量并因此降低了成本。

84. 发明授权

US6084899A Semiconductor light emitting device and manufacturing method 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US6084899A
公开(公告)日：2000-07-04
申请号：US166071
申请日：1998-10-05
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L33/00 , H01L33/32 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01L33/32 , H01L33/007 , H01S5/32 , H01S5/2004 , H01S5/2009 , H01S5/3213 , H01S5/32341
摘要： A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.
摘要翻译：双异质结的半导体发光器件包括有源层和覆层。包覆层包括n型层和p型层。包层夹层有源层。包覆层的带隙能量大于有源层的带隙能量。 n型覆层的带隙能比p型覆层小。

85. 发明授权

US5974069A Semiconductor laser and manufacturing method thereof 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5974069A
公开(公告)日：1999-10-26
申请号：US892273
申请日：1997-07-14
申请人： Haruo Tanaka , Yukio Shakuda
发明人： Haruo Tanaka , Yukio Shakuda
IPC分类号： H01L33/00 , H01S5/10 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32325 , H01S5/2231 , H01S5/026 , H01S5/0267 , H01S5/042 , H01S5/0654 , H01S5/0683 , H01S5/1064 , H01S5/1085 , H01S5/18 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2219 , H01S5/32341
摘要： In a semiconductor laser which uses a semiconductor of GaN type compound, an optimum material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
摘要翻译：在使用GaN型化合物的半导体的半导体激光器中，将最佳材料用于电流阻挡层，使得可以获得满足高发光效率或折射率的增益导引结构的半导体激光器引导结构或两者，从而有助于控制振荡光的噪声（降低噪声），控制光在横向上的扩展以及纵向模式的控制。

86. 发明授权

US5940684A Method and equipment for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法和设备
公开(公告)号：US5940684A
公开(公告)日：1999-08-17
申请号：US859704
申请日：1997-05-21
申请人： Yukio Shakuda , Haruo Tanaka
发明人： Yukio Shakuda , Haruo Tanaka
IPC分类号： H01L21/00 , H01L21/02 , H01L21/203 , H01L21/205 , H01S5/00 , H01S5/323
CPC分类号： H01L21/6719 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/67207 , H01L33/007
摘要： By (a) performing a first treatment process to a substrate in a first apparatus, (b) moving the substrate having undergone the first treatment process into an airtight passage communicating with the first apparatus and shut off from outside and thereafter, shutting off the communication between the passage and the first apparatus, (c) setting the passage to communicate with a second apparatus to move the substrate into the second apparatus, and (d) performing a second treatment process in the second apparatus, the treatment processes are performed in treatment apparatuses suitable therefor without the substrate being exposed to the outside air. As a result, the time between the treatment processes is reduced and the availability ratio of the expensive equipment is improved.
摘要翻译：通过（a）在第一装置中对基板执行第一处理处理，（b）将经过第一处理处理的基板移动到与第一装置通信的气密通道中，并且从外部切断，然后关闭通信在通道和第一设备之间，（c）设置通道与第二设备连通以将基板移动到第二设备中，以及（d）在第二设备中执行第二处理过程，处理过程在处理适合的设备，而不会使基板暴露于外部空气。结果，减少了处理过程之间的时间并提高了昂贵设备的可利用率。

87. 发明授权

US5939735A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5939735A
公开(公告)日：1999-08-17
申请号：US993091
申请日：1997-12-18
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L33/10 , H01L33/32 , H01L33/46 , H01S5/00 , H01S5/323 , H01L33/00
CPC分类号： H01L33/46 , H01L33/007 , H01L2924/0002 , H01L2933/0083
摘要： A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.
摘要翻译：半导体发光器件包括衬底和形成在衬底上的半导体覆盖层。在半导体层中形成发光层以发光。基板可透射由发光层发射的光。在基板的背面的一部分上形成光反射层。结果，半导体发光器件可以通过从晶片背面识别形成在晶片的主表面上的半导体层芯片图案容易地分割其上具有发光膜的晶片而获得。

88. 发明授权

US5814533A Semiconductor light emitting element and manufacturing method therefor 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US5814533A
公开(公告)日：1998-09-29
申请号：US509231
申请日：1995-07-31
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L21/205 , H01L33/00 , H01L33/32 , H01L21/203 , C30B25/22
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007 , H01L33/325
摘要： A manufacturing method of semiconductor light emitting element including the steps of: (a) laminating a gallium nitride compound semiconductor layer for forming a luminous part on a substrate including at least an n-type layer and a p-type layer, by organic metal compound vapor phase growth method, (b) forming the gallium nitride compound semiconductor layer in a nitrogen gas atmosphere after laminating, and lowering the ambient temperature to the temperature for growing a GaAs compound in vapor phase and annealing the p-type layer of the gallium nitride compound semiconductor, (c) forming a film of at least one type selected from the group consisting of GaAs, GaP, InAs, InP, all doped with Mg, and part of these group III elements replaces by Al. on the surface of the gallium nitride compound semiconductor layer, as a protective layer in the nitrogen atmosphere, and (d) annealing the p-type layer of gallium nitride compound semiconductor layer simultaneously with forming the protective film, and lowering to room temperature after annealing, and removing the protective film by etching.
摘要翻译：一种半导体发光元件的制造方法，包括以下步骤：（a）通过有机金属化合物将至少包含n型层和p型层的衬底层叠用于形成发光部的氮化镓系化合物半导体层气相生长法，（b）层压后在氮气气氛中形成氮化镓系化合物半导体层，将环境温度降低至气相生长GaAs化合物的温度，退火氮化镓的p型层化合物半导体，（c）形成选自GaAs，GaP，InAs，InP中的至少一种的全部掺杂的Mg，并且这些III族元素的一部分由Al代替。在氮气氛中的氮化镓系化合物半导体层的表面作为保护层，（d）在形成保护膜的同时退火氮化镓系化合物半导体层的p型层，退火后降至室温，并通过蚀刻去除保护膜。

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