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    • 81. 发明授权
    • Resonant tunneling hot carrier transistor
    • 谐振隧道式热载流子晶体管
    • US5138408A
    • 1992-08-11
    • US683521
    • 1991-04-09
    • Yuji Ando
    • Yuji Ando
    • H01L27/06H01L29/737
    • B82Y10/00H01L27/0605H01L29/7376
    • A resonant tunneling hot carrier transistor according to the present invention is provided with a first multiple-layer structure provided on a substrate and having a first collector layer, a first collector barrier layer, a first base layer and a first quantum well resonator, a common emitter layer, and a second multiple-layer structure provided on the common emitter layer and having a second quantum well resonator, a second base layer, a second collector barrier layer and a second collector layer. The first and second quantum well resonators respectively provide first and second sub-bands different in energy level, so that carrier injections take place from the first and second quantum well resonators into the first and second base layers at different emitter-base voltage levels, respectively.
    • 根据本发明的谐振隧道热载流子晶体管设置有设置在基板上并具有第一集电极层,第一集电极势垒层,第一基极层和第一量子阱谐振器的第一多层结构,共同的 发射极层和设置在公共发射极层上并具有第二量子阱谐振器,第二基极层,第二集电极势垒层和第二集电极层的第二多层结构。 第一和第二量子阱谐振器分别提供能级不同的第一和第二子带,从而分别以不同的发射极 - 基极电压电平从第一和第二量子阱谐振器进入载流子注入到第一和第二基极层 。
    • 88. 发明授权
    • Resonant tunneling bipolar transistor
    • 谐振隧道双极晶体管
    • US5705825A
    • 1998-01-06
    • US520777
    • 1995-08-30
    • Yuji Ando
    • Yuji Ando
    • H01L29/68H01L21/331H01L29/205H01L29/73H01L29/737H01L29/15
    • B82Y10/00H01L29/7376
    • Excellent negative resistance characteristics are attained in a resonant bipolar transistor (RBT) while improving current gain. A first conduction type collector layers and the opposite conduction type base layer are sequentially formed on a semiconductor substrate. A quantum well structure in which a quantum level of electrons or holes is generated, and a contact layer of the same conduction type as the base layer are sequentially formed on a part of the base layer. An emitter layer of the same conduction type as the collector layer is formed directly on another part of the base. Since good negative resistance characteristics can be attained by utilizing the resonant tunneling effect of base majority carriers, and the quantum well structure causing carrier accumulation can be eliminated from the path of carriers flowing between the emitter and the collector, it is possible to reduce the recombination current at the emitter-base interface and in the quantum well structure, thereby improving current gain.
    • 在谐振双极晶体管(RBT)中获得优异的负电阻特性,同时改善电流增益。 第一导电型集电极层和相对导电型基极层依次形成在半导体衬底上。 其中产生电子或空穴的量子水平的量子阱结构,并且在基底层的一部分上依次形成与基底层相同的导电类型的接触层。 与集电体层相同的导电类型的发射极层直接形成在基底的另一部分上。 由于通过利用基极多数载流子的谐振隧穿效应可以获得良好的负电阻特性,并且可以从引发器和集电极之间流动的载流子的路径中消除引起载流子累积的量子阱结构,可以减少复合 电流在发射极 - 基极界面和量子阱结构中,从而改善电流增益。
    • 89. 发明授权
    • Schottky gate field effect transistor
    • 肖特基门场效应晶体管
    • US5548139A
    • 1996-08-20
    • US266616
    • 1994-06-28
    • Yuji Ando
    • Yuji Ando
    • H01L29/78H01L21/338H01L29/778H01L29/80H01L29/812H01L31/0328H01L31/0336
    • H01L29/7783
    • The invention provides a semiconductor multi-layer structure involved in a Schottky gate field effect transistor. The structure comprises a Schottky barrier structure to form a Schottky contact permitting the third conduction band edge to have such a sufficient large discontinuity as to prevent carriers to pass through the Schottky barrier layer, while the Schottky barrier structure includes a quantum well or super-lattice structure to permit carriers to exhibit a tunneling at a high probability between the quantum well layer and a cap layer doped at a sufficient high impurity concentration for permitting the fourth compound semiconductor to be in a degenerate state.
    • 本发明提供涉及肖特基门场效应晶体管的半导体多层结构。 该结构包括肖特基势垒结构以形成肖特基接触,允许第三导带边缘具有足够的大的不连续性,以防止载流子穿过肖特基势垒层,而肖特基势垒结构包括量子阱或超晶格 结构,以允许载体在量子阱层和以足够高的杂质浓度掺杂的覆盖层之间以高概率展现隧道,以允许第四化合物半导体处于退化状态。
    • 90. 发明授权
    • Field effect transistor
    • 场效应晶体管
    • US5105241A
    • 1992-04-14
    • US723664
    • 1991-06-26
    • Yuji Ando
    • Yuji Ando
    • H01L29/812H01L21/338H01L29/778
    • H01L29/7783
    • In a filed effect transistor utilizing two-dimensional electron gas as an active layer, an improvement to increase sheet electron density in a cap layer has been made by inserting into the cap layer at an interface with a carrier supplying layer, a thin film comprising a material having an electron affinity larger than that of a material constituting the cap layer. Further by employing a non-doped material for this thin film layer, electron mobility in the cap layer can also be improved. Thus source resistance of the field effect transistor has been reduced.
    • 在利用二维电子气作为有源层的场效应晶体管中,通过在与载流子供应层的界面处插入到盖层中来提高盖层​​中的片电子密度的改进,薄膜包括 具有大于构成盖层的材料的电子亲和力的材料。 此外,通过对该薄膜层采用非掺杂材料,也可以提高盖层中的电子迁移率。 因此,场效应晶体管的源极电阻已经降低。