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81. 发明申请

US20060173216A1 Novel 1, 3, 5 tris (arylamino) benzenes 失效
标题翻译：新的1,3,5-三（芳基氨基）苯
公开(公告)号：US20060173216A1
公开(公告)日：2006-08-03
申请号：US10549166
申请日：2004-03-15
申请人： Hiroshi Inada , Nobutaka Akashi , Tomoko Hayashi
发明人： Hiroshi Inada , Nobutaka Akashi , Tomoko Hayashi
IPC分类号： C07C211/50
CPC分类号： C07C211/58 , H01L51/0059 , H01L51/006 , H01L51/5048
摘要： The invention provides 1,3,5-tris(arylamino)benzenes represented by the general formula (I) wherein A is naphthyl, anthryl or phenanthryl group, and R is hydrogen atom or diarylamino group. These 1,3,5-tris(arylamino)benzenes have oxidation potentials in the range of about 0.5-0.6V, excellent reversibility in oxidation-reduction process, high glass transition temperatures and high heat resistance, so that they can form practicable organic semiconductor film readily by a coating method or a vacuum deposition method. In addition, they are capable of forming stable and durable amorphous film useful as high performance organic semiconductors at normal temperatures or higher with no aid of binder resins, that is, by themselves.
摘要翻译：本发明提供由通式（I）表示的1,3,5-三（芳氨基）苯，其中A为萘基，蒽基或菲基，R为氢原子或二芳基氨基。这些1,3,5-三（芳基氨基）苯具有在约0.5-0.6V的范围内的氧化电位，氧化还原过程的优异可逆性，高玻璃化转变温度和高耐热性，使得它们可以形成可行的有机半导体通过涂布方法或真空沉积方法容易地制备薄膜。此外，它们能够在常温或更高温度下形成稳定且耐用的无定形薄膜，无需粘合剂树脂，即本身就可以使用。

82. 发明申请

US20050000451A1 Clamping jig for semiconductor laser bars 审中-公开
标题翻译：半导体激光棒夹紧夹具
公开(公告)号：US20050000451A1
公开(公告)日：2005-01-06
申请号：US10843976
申请日：2004-05-11
申请人： Nobuyuki Mitsui , Hiroshi Inada
发明人： Nobuyuki Mitsui , Hiroshi Inada
IPC分类号： C23C14/24 , C23C14/32 , C23C14/34 , C23C14/50 , C23C16/00 , H01S5/028
CPC分类号： C23C14/505
摘要： A clamping jig for mounting semiconductor laser bars includes: multiple supporting bars for holding laser bars therebetween; a pair of supporting plates each of which has a mounting face for mounting the supporting bars in a row; a pressing member for pressing the supporting bars for holding the laser bar; pressing cover members for covering both ends of each supporting bar to prevent supporting bars from falling from the supporting plate; and a supporting frame for detachably supporting the supporting plates and pressing cover members. Each supporting bar is formed with a longitudinal length greater than the laser bar, within a predetermined length so as to be mounted within the supporting frame. Both of the pair of supporting plates may be mounted so as to face one another, or just one may be mounted with the pressing cover members being mounted on the supporting frame instead of the other supporting plate.
摘要翻译：用于安装半导体激光棒的夹紧夹具包括：用于在其间保持激光棒的多个支撑杆; 一对支撑板，每个支撑板具有用于将支撑杆安装成一排的安装面; 用于按压用于保持激光棒的支撑杆的按压构件; 按压用于覆盖每个支撑杆的两端的盖构件，以防止支撑杆从支撑板掉落; 以及用于可拆卸地支撑支撑板和按压盖构件的支撑框架。每个支撑杆形成为具有大于激光棒的纵向长度，并且在预定长度内被安装在支撑框架内。一对支撑板可以彼此相对地安装，或者只有一个可以安装有按压盖构件而不是另一个支撑板安装在支撑框架上。

83. 发明授权

US5714767A Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby 失效
标题翻译：制造具有减小的氧化物超导层厚度的超导装置的方法和由此制造的超导装置
公开(公告)号：US5714767A
公开(公告)日：1998-02-03
申请号：US551366
申请日：1995-11-01
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/146
摘要： For manufacturing a superconducting device, a compound layer which is composed of the same constituent elements of an oxide superconductor is formed on a surface of the substrate, and a gate electrode is formed on a portion of the compound layer. Portions of the compound layer at both sides of die gate electrode are etched using die gate electrode as a mask, so that a shallow step is formed on an upper surface of the compound layer and side surfaces of the step exposed. After that electric power is applied to the gate electrode to heat the gate electrode so as to carry out a heat-treatment on the portion of die compound layer under the gate electrode locally, so that a gate insulator formed directly under the the gate electrode and a superconducting channel which is constituted an extremely thin superconducting region composed of the oxide superconductor and formed under die gate insulator are produced in a self alignment to die gate electrode.
摘要翻译：为了制造超导装置，在衬底的表面上形成由氧化物超导体的相同组成元素组成的化合物层，并且在化合物层的一部分上形成栅电极。使用模具栅电极作为掩模来蚀刻在栅极电极的两侧的化合物层的部分，从而在化合物层的上表面和暴露的台阶的侧表面上形成浅的台阶。在栅电极施加电力加热栅电极之后，局部地对栅电极下的管芯复合层部分进行热处理，从而形成在栅电极正下方的栅极绝缘体和制造由氧化物超导体构成的非常薄的超导区域并形成在栅极绝缘体下方的超导通道以对准栅极电极的自对准的方式制造。

84. 发明授权

US5683968A Method for manufacturing a superconducting device 失效
标题翻译：制造超导装置的方法
公开(公告)号：US5683968A
公开(公告)日：1997-11-04
申请号：US521736
申请日：1995-08-31
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L39/24
CPC分类号： H01L39/146 , Y10S505/702
摘要： A superconducting device or a super-FET has a pair of superconducting electrode regions (20b, 20c) consisting of a thin film (20) oxide superconductor being deposited on a substrate (5) and a weak/ink region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a), these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) and/or a gate electrode insulating layer (16) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.
摘要翻译：超导器件或超FET具有一对超导电极区域（20b，20c），其由沉积在衬底（5）和弱/墨区域（20a）上的薄膜（20）氧化物超导体组成，超导电极区域（20b，20c）位于弱连接区域（20a）的相对侧，这些超导电极区域（20b，20c）和弱连接区域（20a）形成在基板（5）的公共平面上）。通过将衬底（5）的构成元件和/或栅电极绝缘层（16）以这种方式局部扩散到氧化物超导体的薄膜（20）中而产生弱连接区域（20a）氧化物超导体的薄膜（20）的实质壁厚在弱连接区域（20a）处减小，以便在氧化物超导体的薄膜（20）中留下弱连接或超导通道（10），超过通过扩散产生的非超导区域（50）。

85. 发明授权

US5621223A Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same 失效
标题翻译：具有减小氧化物超导层厚度的超导装置及其制造方法
公开(公告)号：US5621223A
公开(公告)日：1997-04-15
申请号：US515701
申请日：1995-08-16
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/146 , Y10S505/702 , Y10S505/728
摘要： A superconducting device includes first and second oxide superconducting regions of a relatively thick thickness, formed directly on a principal surface of a substrate to be separate from each other, and a third oxide superconducting region of an extremely thin thickness which is formed directly on the principal surface of the substrate so as to bridge the first and second oxide superconducting regions. A barrier layer and a diffusion source layer are formed on the third oxide superconducting region, and an isolation region is formed to cover an upper portion or both side surfaces of the diffusion source layer. The first, second and third oxide superconducting regions and the isolation region are formed of the same oxide superconductor material, and the isolation region is diffused with a material of the diffusion source layer, so that the isolation region does not show superconductivity. Therefore, a superconducting current can flow between the first and second oxide superconducting regions through only the third oxide superconducting region. For formation of the superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on the principal surface of the substrate, and a barrier layer and a diffusion source layer are formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film until the two layers are embedded in the second oxide superconductor thin film, so that a material of the diffusion source layer is diffused into the second oxide superconductor thin film on an upper portion or both side surfaces of the diffusion source layer.
摘要翻译：超导装置包括直接形成在彼此分离的基板的主表面上的相对较厚厚度的第一和第二氧化物超导区域，以及直接形成在主体上的极薄厚度的第三氧化物超导区域表面以便桥接第一和第二氧化物超导区域。在第三氧化物超导区域上形成阻挡层和扩散源层，形成隔离区以覆盖扩散源层的上部或两侧表面。第一，第二和第三氧化物超导区域和隔离区域由相同的氧化物超导体材料形成，并且隔离区域与扩散源层的材料扩散，使得隔离区域不显示超导性。因此，超导电流可以仅通过第三氧化物超导区域在第一和第二氧化物超导区域之间流动。为了形成超导装置，在基板的主表面上形成具有非常薄的厚度的第一氧化物超导体薄膜，并且在第一氧化物超导体薄膜的一部分上形成阻挡层和扩散源层。在第一氧化物超导体薄膜的暴露表面上生长第二氧化物超导体薄膜，直到两层嵌入到第二氧化物超导体薄膜中，使得扩散源层的材料扩散到第二氧化物超导体薄膜膜在扩散源层的上部或两侧表面上。

86. 发明授权

US5607900A Process for cleaning a surface of thin film of oxide superconductor 失效
标题翻译：清洁氧化物超导体薄膜表面的工艺
公开(公告)号：US5607900A
公开(公告)日：1997-03-04
申请号：US551702
申请日：1995-11-01
申请人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama , So Tanaka
发明人： Hiroshi Inada , Takao Nakamura , Michitomo Iiyama , So Tanaka
IPC分类号： H01L39/24 , B05D5/12 , B08B5/04
CPC分类号： H01L39/247 , Y10S505/742
摘要： A process for removing contaminants from a surface of a thin film of oxide superconductor deposited on a substrate. The thin film of oxide superconductor is heat-treated in ultra-high vacuum at a temperature which is within a range of -100.degree. C. to +100.degree. C. of the temperature at which oxygen enter into the oxide superconductor.The process is used for removing photo-resist from a surface of thin film of oxide superconductor and for producing a layered structure containing at least one thin film of oxide superconductor such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x having a contaminated surface. On the cleaned surface, another thin film of oxide superconductor or non-superconductor is deposited. The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.
摘要翻译：用于从沉积在基底上的氧化物超导体薄膜的表面去除污染物的方法。氧化物超导体的薄膜在超高真空中在氧进入氧化物超导体的温度在-100℃至+ 100℃的温度范围内进行热处理。该方法用于从氧化物超导体的薄膜的表面去除光致抗蚀剂，并且用于生产含有至少一种具有污染表面的Y1Ba2Cu3O7-x氧化物超导体薄膜的层状结构。在清洁的表面上，沉积另一薄膜的氧化物超导体或非超导体。所得到的层状薄膜结构用于制造超导晶体管，约瑟夫森结，超导电路等。

87. 发明授权

US5447907A Superconducting device with c-axis channel and a-axis source and drain having a continuous crystal structure 失效
标题翻译：具有c轴通道和a轴源极和漏极的超导器件具有连续的晶体结构
公开(公告)号：US5447907A
公开(公告)日：1995-09-05
申请号：US989787
申请日：1992-12-10
申请人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
发明人： Takao Nakamura , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/14 , H01B12/00 , H01L39/22
CPC分类号： H01L39/146 , Y10S505/701 , Y10S505/703 , Y10T29/41
摘要： A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, a superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor. The non-superconducting oxide layers contact with at least the superconducting source region and the superconducting drain region. In the superconducting device, the superconducting channel, the superconducting source region and the superconducting drain region are formed of one oxide superconductor thin film of which the center portion is c-axis oriented and the both ends are a-axis oriented.
摘要翻译：一种超导装置，包括具有主表面的衬底，超导源极区和由衬底的主表面上的氧化物超导体形成的超导漏极区，所述超导源区彼此分离的由氧化物超导体形成的超导通道在超导源极区域和超导漏区。超导通道将超导源极区域电连接到超导漏极区域，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道。超导装置包括通过超导通道上的栅极绝缘体的栅极电极，用于控制流过超导通道的超导电流，以及具有与氧化物超导体相似的晶体结构的非超导氧化物层。非超导氧化物层与至少超导源极区域和超导漏极区域接触。在超导装置中，超导通道，超导源极区域和超导漏极区域由一个氧化物超导体薄膜形成，其中心部分为c轴取向并且两端为a轴取向。

88. 发明授权

US5439875A Process for preparing Josephson junction device having weak link of artificial grain boundary 失效
标题翻译：制备具有人造晶界弱连接的约瑟夫逊连接装置的方法
公开(公告)号：US5439875A
公开(公告)日：1995-08-08
申请号：US337413
申请日：1994-11-07
申请人： So Tanaka , Hiroshi Inada , Michitomo Iiyama
发明人： So Tanaka , Hiroshi Inada , Michitomo Iiyama
IPC分类号： H01L39/22 , H01L39/24 , B44C1/22 , C23F1/00
CPC分类号： H01L39/2496 , Y10S505/729 , Y10S505/82 , Y10S505/922
摘要： A Josephson junction device comprises a single crystalline substrate including a principal surface having a first and a second regions of which at least lattice distance of exposed lattices are slightly different from each other and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second portions respectively positioned on the first and the second regions of the substrate, which are constituted of single crystals of the oxide superconductor, lattices of the one shifts at angle of 45.degree. to that of the other, and a grain boundary between said two portions, which constitutes a weak link of the Josephson junction.
摘要翻译：约瑟夫森结器件包括单晶衬底，其包括具有第一和第二区域的主表面，该第一区域和第二区域的至少晶格距离彼此稍微不同，以及形成在衬底的主表面上的氧化物超导体薄膜。氧化物超导体薄膜包括分别位于基板的第一和第二区域上的第一和第二部分，该第一和第二部分由氧化物超导体的单晶构成，一个晶格以45°的角度移动另外，在所述两个部分之间的晶界，构成约瑟夫逊结的薄弱环节。

89. 发明授权

US5259159A Construction having a damping device 失效
标题翻译：具有阻尼装置的结构
公开(公告)号：US5259159A
公开(公告)日：1993-11-09
申请号：US786395
申请日：1991-11-01
申请人： Hiroshi Kawase , Ikuo Takahashi , Toshiaki Sato , Yasuhiro Hayashi , Toru Ishii , Sekio Nambu , Hiroshi Inada , Tetsushi Kiyokawa
发明人： Hiroshi Kawase , Ikuo Takahashi , Toshiaki Sato , Yasuhiro Hayashi , Toru Ishii , Sekio Nambu , Hiroshi Inada , Tetsushi Kiyokawa
IPC分类号： E02D27/34 , E04H9/02 , E02D27/37
CPC分类号： E04H9/02 , E02D27/34 , E04H9/028
摘要： A construction having a damping device for damping vibration having steel wire cables 20 having both ends fixed on the sides of the building 10, the steel wire cables 20 are tautly and obliquely provided on the building 10 so that one side and the other side of the steel wire cables 20 cross at only one point in front view. Since the steel wire cables 20 do not exist in the horizontal direction, the length of the steel wire cables 20 is shorter as compared with the prior art. Accordingly, extension of the steel wire cables 20 decreases, the mechanism is simpler, and maintenance is also simplified.
摘要翻译：具有用于阻尼振动的阻尼装置的结构，其具有两端固定在建筑物10的侧面上的钢丝绳20，钢丝绳20被拉紧地倾斜地设置在建筑物10上，使得一侧和另一侧钢丝绳20在前视图中只有一点交叉。由于钢丝绳20在水平方向上不存在，与现有技术相比，钢丝绳20的长度较短。因此，钢丝绳20的延伸减小，机构简单，维护也简化。

90. 发明授权

US09190544B2 Photodiode, optical sensor device, and photodiode manufacturing method 有权
标题翻译：光电二极管，光传感器装置和光电二极管的制造方法
公开(公告)号：US09190544B2
公开(公告)日：2015-11-17
申请号：US13581863
申请日：2011-09-28
申请人： Kei Fujii , Takashi Ishizuka , Katsushi Akita , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Kei Fujii , Takashi Ishizuka , Katsushi Akita , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , B82Y20/00 , H01L31/105 , H01L31/18 , H01L27/146 , H01L29/15
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14647 , H01L27/14652 , H01L29/15 , H01L31/105 , H01L31/1844 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.
摘要翻译：提供能够防止短波长侧的响应性劣化的光电二极管等，同时完全提高II型MQW结构的响应性。光电二极管形成在III-V族化合物半导体衬底上，并包括像素。光电二极管包括位于基板上的II型MQW结构的吸收层。 MQW结构包括五对或更多对两种不同类型的III-V族化合物半导体层。两种不同类型的III-V族化合物半导体层之一的厚度，该层具有较高的价带电势，其厚度比另一层的厚度薄。

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