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81. 发明申请

US20100032838A1 AMORPHOUS CARBON FILM, SEMICONDUCTOR DEVICE, FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM 审中-公开
标题翻译：非晶碳膜，半导体器件，膜成膜方法，成膜装置和储存介质
公开(公告)号：US20100032838A1
公开(公告)日：2010-02-11
申请号：US12516862
申请日：2007-11-30
申请人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
发明人： Yoshiyuki Kikuchi , Yasuo Kobayashi , Kohei Kawamura , Toshihisa Nozawa , Hiraku Ishikawa
IPC分类号： H01L23/532 , H01L21/314 , C09D1/00
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02123 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/3146 , H01L21/76811 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.
摘要翻译：本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

82. 发明申请

US20090242130A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090242130A1
公开(公告)日：2009-10-01
申请号：US12095262
申请日：2006-11-15
申请人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： B44C1/22 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.
摘要翻译：等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。

83. 发明申请

US20090208707A1 THIN FILM FORMING METHOD AND LAYERED STRUCTURE OF THIN FILM 审中-公开
标题翻译：薄膜形成方法和薄膜的层状结构
公开(公告)号：US20090208707A1
公开(公告)日：2009-08-20
申请号：US12305226
申请日：2007-10-04
申请人： Hirokazu Ueda , Toshihisa Nozawa
发明人： Hirokazu Ueda , Toshihisa Nozawa
IPC分类号： B32B3/10 , C23C14/34 , B32B9/00 , B32B15/04
CPC分类号： H01L21/2855 , H01L21/76843 , H01L21/76846 , H01L23/53238 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： Disclosed is a thin film forming method including: a prevention film forming process for forming a charging damage prevention film for preventing a charging damage on a surface of a target object by a sputtering; and a thin film forming process for forming a desired thin film on a surface of the charging damage prevention film, which is formed on the surface of the target object, by a sputtering.
摘要翻译：公开了一种薄膜形成方法，包括：防止膜形成过程，用于形成用于通过溅射防止对象物体的表面的带电损伤的带电损伤防止膜; 以及通过溅射形成在目标物体的表面上的充电损伤防止膜的表面上形成所需薄膜的薄膜形成工艺。

84. 发明申请

US20090053900A1 Processing Apparatus and Processing Method 有权
标题翻译：处理装置及处理方法
公开(公告)号：US20090053900A1
公开(公告)日：2009-02-26
申请号：US12226089
申请日：2007-04-06
申请人： Toshihisa Nozawa , Koji Kotani , Kouji Tanaka
发明人： Toshihisa Nozawa , Koji Kotani , Kouji Tanaka
IPC分类号： C23F1/00 , C23C16/00 , C23C16/46 , H01L21/302 , H01L21/31
CPC分类号： F17D1/04 , C23C16/45502 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J2237/1825 , Y10T137/0368
摘要： A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.
摘要翻译：处理装置包括具有用于放置处理对象的放置台，具有真空泵的排气系统和用于在处理容器中排出气氛的压力控制阀的处理容器。具有气体喷射孔的气体注入单元设置在处理容器中，以及用于向气体注入单元供给处理气体的气体供给单元。整个处理装置由控制单元控制。控制单元控制排气系统和气体供给单元。当开始预定的过程时，在排气系统排出处理容器中的气氛的同时，以较短的时间提供大于规定流量的流量的处理气体，然后供给规定流量的处理气体。

85. 发明申请

US20090008369A1 PROCESSING DEVICE 有权
标题翻译：加工设备
公开(公告)号：US20090008369A1
公开(公告)日：2009-01-08
申请号：US12161591
申请日：2007-03-05
申请人： Toshihisa Nozawa , Tamaki Yuasa
发明人： Toshihisa Nozawa , Tamaki Yuasa
IPC分类号： B23K9/00
CPC分类号： H01L21/67126 , C23C16/4412 , C23C16/511 , C23C16/52 , H01J37/32834 , H01L21/67017 , Y10T137/85978
摘要： In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.
摘要翻译：在用于以预定处理压力对目标物体进行特定处理的处理装置中，该装置包括：排气口，其具有形成在其底部的排气口; 设置在处理室内用于保持目标物体的安装台; 连接到排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的面积的滑动式阀体; 以及连接到压力控制阀的排气系统。压力控制阀偏心地布置成使得安装台的中心轴线位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。

86. 发明授权

US07469654B2 Plasma processing device 有权
标题翻译：等离子处理装置
公开(公告)号：US07469654B2
公开(公告)日：2008-12-30
申请号：US10515626
申请日：2003-05-30
申请人： Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： C23C16/00 , H01J7/24
CPC分类号： H01J37/32192 , H01J37/32238
摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as a wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector.
摘要翻译：等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分通过这个顶板。顶板在其内设有反射构件。反射构件的侧壁作为用于反射在顶板中在半径方向上传播的高频波的波反射体。或者，不能以顶板的凹部的侧壁作为波反射体的方式设置反射构件。

87. 发明申请

US20080271471A1 Temperature Controlling Method for Substrate Processing System and Substrate Processing System 审中-公开
标题翻译：基板加工系统和基板加工系统的温度控制方法
公开(公告)号：US20080271471A1
公开(公告)日：2008-11-06
申请号：US10583847
申请日：2004-12-24
申请人： Toshihisa Nozawa , Koji Kotani
发明人： Toshihisa Nozawa , Koji Kotani
IPC分类号： G05D23/19 , F25D17/02 , H01L21/205
CPC分类号： C23C16/463 , C23C16/4411 , C23C16/46 , F25B2700/21 , F25D17/02 , F25D2400/02 , H01J37/32522 , H01J37/32724 , H01J2237/2001 , H01L21/67248
摘要： A substrate processing system comprises a plurality of CVD processing units (15a-15c) and one refrigerator (101). A supply line (102) for supplying a cooling medium from the refrigerator to the CVD processing units, and a feedback line (103) for feeding the cooling medium back to the refrigerator from the processing units are laid in the system. The cooling medium from the refrigerator is thus distributively fed to the processing units. Circuits (104a-104c) are laid out in rod stages (33), objects of temperature control, in the respective processing units. Each circuit is connected to the supply line and to the feedback line. The cooling medium is circulated around the circuits to control the temperatures of the rod stages stably. When the temperature of the rod stage rises, the cooling medium at a low temperature is taken in the circuit from the supply line to cool the rod stage.
摘要翻译：衬底处理系统包括多个CVD处理单元（15a-15c）和一个冰箱（101）。用于从冷藏室向CVD处理单元供给冷却介质的供给管线（102），以及用于将冷却介质从处理单元送回到冰箱的反馈管线（103）。因此，来自冰箱的冷却介质被分配地供给到处理单元。电路（104a-104c）在相应的处理单元中的杆级（33），温度控制对象中布置。每个电路连接到电源线和反馈线。冷却介质在电路周围循环，以稳定地控制棒级的温度。当杆台的温度上升时，低温的冷却介质从电源线从电路中取出，冷却棒台。

88. 发明授权

US07396431B2 Plasma processing system for treating a substrate 有权
标题翻译：用于处理基材的等离子体处理系统
公开(公告)号：US07396431B2
公开(公告)日：2008-07-08
申请号：US10953801
申请日：2004-09-30
申请人： Lee Chen , Hiromitsu Kambara , Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Lee Chen , Hiromitsu Kambara , Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32082 , H01J37/32192
摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.
摘要翻译：用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理底物。衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体等离子体空间栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

89. 发明申请

US20070264441A1 Plasma Processing Apparatus and Plasma Processing Method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20070264441A1
公开(公告)日：2007-11-15
申请号：US10589272
申请日：2005-02-15
申请人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
发明人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
IPC分类号： C08F2/46 , C23C16/00
CPC分类号： H01J37/32192 , H01J37/32238
摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.
摘要翻译：通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

90. 发明申请

US20070221130A1 Substrate Processing Apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20070221130A1
公开(公告)日：2007-09-27
申请号：US11597523
申请日：2005-05-23
申请人： Toshihisa Nozawa , Tamaki Yuasa
发明人： Toshihisa Nozawa , Tamaki Yuasa
IPC分类号： C23C16/44
CPC分类号： C23C16/4401 , C23C16/4412 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/32862
摘要： The present invention has the object of improving the efficiency of cleaning in a substrate processing apparatus. Thus, the present invention uses a substrate processing apparatus, comprising: a processing vessel holding therein a substrate to be processed; gas supply means for supplying a gas for processing into said processing vessel; a stage provided in the processing vessel for holding said substrate to be processed; a shielding plate dividing a space inside said processing vessel into a first space and a second space, wherein there are provided: a first evacuation path for evacuating said first space; and a second evacuation path for evacuating said second space.
摘要翻译：本发明的目的是提高基板处理装置中的清洁效率。因此，本发明使用基板处理装置，其包括：处理容器，在其中容纳待处理的基板; 用于将气体供给到所述处理容器中的气体供给装置; 设置在处理容器中用于保持待处理的基板的台阶; 将所述处理容器内的空间分割成第一空间和第二空间的遮蔽板，其特征在于，具备：排出所述第一空间的第一排出路径; 以及用于排出所述第二空间的第二抽空路径。

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