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    • 82. 发明授权
    • Photosensitive member cartridge, developer cartridge and process cartridge
    • 感光元件盒,显影剂盒和处理盒
    • US07873296B2
    • 2011-01-18
    • US12216686
    • 2008-07-09
    • Makoto IshiiFumikazu SatoIsao KishiTakashi Shimizu
    • Makoto IshiiFumikazu SatoIsao KishiTakashi Shimizu
    • G03G15/00
    • G03G21/1857G03G15/087G03G15/0887G03G21/1867
    • A developer cartridge including a frame, a developer carrying member, and an input gear member is provided. The frame includes a first side wall and a second side wall, and the first side wall and the second side wall extend in a length direction. The developer carrying member extends from the first side wall to the second side wall in a width direction perpendicular to the length direction. The developer carrying member includes a developer carrying member shaft rotatably supported by the first side wall and the second side wall, and the developer carrying member is rotatable about a first axis. The input gear member, for supplying a driving force for rotating the developer carrying member, is rotatably supported by the first side wall so as to be rotatable about a second axis. A first distance between the first axis and the second axis in the length direction is about 14.0 mm.
    • 提供了包括框架,显影剂承载构件和输入齿轮构件的显影剂盒。 框架包括第一侧壁和第二侧壁,并且第一侧壁和第二侧壁在长度方向上延伸。 显影剂承载构件在垂直于长度方向的宽度方向上从第一侧壁延伸到第二侧壁。 显影剂承载构件包括由第一侧壁和第二侧壁可旋转地支撑的显影剂承载构件轴,并且显影剂承载构件可围绕第一轴线旋转。 用于提供用于旋转显影剂承载构件的驱动力的输入齿轮构件由第一侧壁可旋转地支撑,以便可绕第二轴线旋转。 长度方向上第一轴线与第二轴线之间的第一距离约为14.0mm。
    • 84. 发明申请
    • ROTARY-TYPE FLUID MACHINE
    • 旋转式流体机
    • US20100296959A1
    • 2010-11-25
    • US12864383
    • 2009-01-23
    • Takashi ShimizuYoshitaka ShibamotoTakazou SotojimaMasanori Masuda
    • Takashi ShimizuYoshitaka ShibamotoTakazou SotojimaMasanori Masuda
    • F01C1/24
    • F04C18/32F04C15/0042F04C18/045F04C18/356F04C23/001F04C23/008F04C2250/00
    • A rotary-type fluid machine includes a compression mechanism having piston mechanisms arranged one on top of the other and a drive mechanism having a drive shaft that is configured and arranged to drive the piston mechanisms. Each of the two piston mechanisms includes a cylinder member with a cylinder chamber, a piston member housed eccentrically in the cylinder chamber such that the cylinder chamber is partitioned into first and second compression chambers. A phase difference of 90 degrees in volume change is made between the cylinder chambers of the two piston mechanisms. A movable one of the cylinder and piston has a first surface facing one of the first cylinder chambers and a second surface facing one of the second cylinder chambers, with a surface area of the first surface being equal to a surface area of the second surface.
    • 旋转式流体机械包括:压缩机构,其具有一个彼此顶部布置的活塞机构;以及驱动机构,该驱动机构具有构造和布置成驱动活塞机构的驱动轴。 两个活塞机构中的每一个包括具有气缸室的气缸构件,偏心地容纳在气缸室中的活塞构件,使得气缸室被分隔成第一和第二压缩室。 在两个活塞机构的气缸室之间形成体积变化为90度的相位差。 所述气缸和活塞中的可移动的一个具有面向所述第一气缸室中的一个的第一表面和面向所述第二气缸室中的一个的第二表面,所述第一表面的表面积等于所述第二表面的表面积。
    • 86. 发明授权
    • Liquid crystal panel and liquid crystal display apparatus
    • 液晶面板和液晶显示装置
    • US07812901B2
    • 2010-10-12
    • US12067696
    • 2007-05-11
    • Naotaka KinjoKentarou YoshidaTakashi ShimizuShinobu NaganoNao MurakamiMasaki Hayashi
    • Naotaka KinjoKentarou YoshidaTakashi ShimizuShinobu NaganoNao MurakamiMasaki Hayashi
    • G02F1/1335
    • G02B27/281G02B5/3083G02F1/133528G02F1/133634
    • It is an object of the present invention to provide a liquid crystal display panel having a high contrast ratio in a front direction.A liquid crystal panel according to an embodiment of the present invention includes: a liquid crystal cell; a first polarizing plate placed on one side of the liquid crystal cell; a second polarizing plate placed on the other side of the liquid crystal cell; and a retardation layer placed between the liquid crystal cell and the second polarizing plate. A refractive index ellipsoid of the retardation layer exhibits a relationship of n≧ny>nz; and a light transmittance (T2) of the second polarizing plate is larger than a light transmittance (T1) of the first polarizing plate. Such a liquid crystal panel has a remarkably higher contrast ratio in a front direction than that of a conventional liquid crystal panel (for example, a liquid crystal panel in which the light transmittances of two polarizing plates placed on both sides of a liquid crystal cell are the same), and shows excellent display properties.
    • 本发明的目的是提供一种在正面方向上具有高对比度的液晶显示面板。 根据本发明实施例的液晶面板包括:液晶单元; 放置在液晶单元一侧的第一偏振片; 放置在液晶单元的另一侧的第二偏光板; 以及放置在液晶单元和第二偏振板之间的相位差层。 延迟层的折射率椭球表现出n≥ny> nz的关系; 并且第二偏振片的透光率(T2)大于第一偏振片的透光率(T1)。 这种液晶面板的正面方向的对比度比现有的液晶面板(例如液晶单元的两侧的两个偏光板的透光率为 相同),并且显示出优异的显示性能。
    • 87. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20100187612A1
    • 2010-07-29
    • US12693985
    • 2010-01-26
    • Daisuke IKENOTomonori AoyamaKazuaki NakajimaSeiji InumiyaTakashi ShimizuTakuya Kobayashi
    • Daisuke IKENOTomonori AoyamaKazuaki NakajimaSeiji InumiyaTakashi ShimizuTakuya Kobayashi
    • H01L27/092H01L21/8238
    • H01L21/823842H01L21/28088H01L21/823807H01L21/82385H01L29/1054H01L29/4966H01L29/513H01L29/517H01L29/6659
    • A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
    • 根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。 该器件包括衬底,形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜,形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜, 形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜,形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜, 并且含有铪,以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层,在第二区域中形成的栅电极层的厚度大于栅电极的厚度 层形成在第一区域中。
    • 89. 发明授权
    • Vehicular power transmitting apparatus
    • 车载发射装置
    • US07651425B2
    • 2010-01-26
    • US12100717
    • 2008-04-10
    • Takashi Shimizu
    • Takashi Shimizu
    • F16H3/72
    • F16H3/727B60K1/02B60K6/26B60K6/365B60K6/445B60L11/123B60L11/14B60L2270/145F16H2037/0866F16H2200/2007Y02T10/6217Y02T10/6239Y02T10/7077
    • A case in which a vehicular power transmitting apparatus is stored, has: an annular support portion which surrounds an outer periphery of a planetary gear set and supports a fixed element from among a plurality of gears and a carrier of the planetary gear set; an outer peripheral wall portion that surrounds the annular support portion; a flange portion that forms a mounting surface on an outer portion of the outer peripheral wall portion; and a dividing wall portion which extends to the outside from the annular support portion toward the outer peripheral wall portion and the flange portion, and which forms the flange portion and the mounting surface and divides spaces within the case. A joining portion, in which a fastening hole to which the fastening member is joined and whose axis passes through the dividing wall portion is formed, is integrally formed with the dividing wall portion.
    • 存储有车辆动力传递装置的情况具有:围绕行星齿轮组的外周并从多个齿轮和行星齿轮组的托架支撑固定元件的环状支撑部; 围绕所述环状支撑部的外周壁部; 凸缘部,其形成在所述外周壁部的外部的安装面; 以及从所述环状支撑部向外周壁部和所述凸缘部向外侧延伸的分隔壁部,并且形成所述凸缘部和所述安装面并分割所述壳体内的空间。 与该分隔壁部一体地形成有将紧固部件接合并且轴线通过分隔壁部的紧固孔形成的接合部。
    • 90. 发明申请
    • SEMICONDUCTOR STRUCTURE
    • 半导体结构
    • US20090134465A1
    • 2009-05-28
    • US12065901
    • 2006-08-22
    • Takashi Shimizu
    • Takashi Shimizu
    • H01L29/78H01L21/28
    • C23C16/406H01L21/28088H01L21/28273H01L23/53238H01L29/42384H01L29/4908H01L29/4966H01L29/513H01L29/517H01L29/518H01L29/66545H01L29/66666H01L29/66825H01L29/7827H01L29/785H01L29/78642H01L29/78648H01L29/7881H01L2924/0002H01L2924/00
    • A desired property for a metal gate electrode layer is that it can cover a three-dimensional semiconductor structure having a microstructure with high step coverage. Another desired property for the metal gate electrode layer is that the surface of a deposited electrode layer is flat on a nanometer scale, enables a dielectric layer for electrical insulation to be coated without performing special planization after deposition of the electrode layer. Furthermore, another desired property for the metal gate electrode layer is that it has the similar etching workability to materials used in an ordinary semiconductor manufacturing process. Furthermore, another desired property for the metal gate electrode layer is that it has a structure in which diffusion of impurity is suppressed due to homogeneity thereof and the absence of grain boundaries. It was found that an amorphous metal electrode is most suitable for realizing the metal gate electrode layer satisfying the above-mentioned properties and thereby the present invention was achieved.
    • 用于金属栅电极层的期​​望性质是其可以覆盖具有高阶覆盖的微结构的三维半导体结构。 用于金属栅极电极层的另一期望性质是沉积电极层的表面是纳米级的平坦的,能够在沉积电极层之后进行电绝缘的电介质层而不进行特殊的平面化。 此外,对于金属栅电极层的另一期望特性是它具有与在普通半导体制造工艺中使用的材料相似的蚀刻可加工性。 此外,用于金属栅电极层的另一期望性质是其具有由于其均匀性和不存在晶界而抑制杂质扩散的结构。 发现非晶金属电极最适于实现满足上述性能的金属栅电极层,从而实现了本发明。