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    • 81. 发明申请
    • MOS-TYPE ESD PROTECTION DEVICE IN SOI AND MANUFACTURING METHOD THEREOF
    • SOI中的MOS型ESD保护器件及其制造方法
    • US20110221002A1
    • 2011-09-15
    • US13055553
    • 2010-07-14
    • Jing ChenJiexin LuoQingqing WuBingxu NingZhongying XueXiaolu HuangXi Wang
    • Jing ChenJiexin LuoQingqing WuBingxu NingZhongying XueXiaolu HuangXi Wang
    • H01L29/786H01L21/336
    • H01L27/0266
    • The present invention discloses a MOS ESD protection device for SOI technology and a manufacturing method for the device. The MOS ESD protection device comprises: an epitaxial silicon layer grown on top of an SOI substrate; a first side-wall spacer disposed on both sides of the epitaxial silicon layer so as to isolate the ESD protection device from the intrinsic active structures; a source region and a drain region disposed respectively on two sides of the epitaxial silicon layer; a poly silicon gate and a gate dielectric formed on top of the epitaxial silicon layer; and a second side-wall spacer disposed on both sides of the poly silicon gate of . ESD leakage current passes down to the SOI substrate for protection. Because ESD protection device and intrinsic MOS transistor are located in the same plane, this fabrication process can be inserted in the current MOS process flow.
    • 本发明公开了一种用于SOI技术的MOS ESD保护器件和该器件的制造方法。 MOS ESD保护器件包括:在SOI衬底的顶部上生长的外延硅层; 设置在所述外延硅层的两侧的第一侧壁间隔件,以将所述ESD保护装置与所述固有活性结构隔离; 分别设置在所述外延硅层的两侧的源极区域和漏极区域; 形成在外延硅层顶部的多晶硅栅极和栅极电介质; 以及设置在多晶硅栅极两侧的第二侧壁间隔物。 ESD泄漏电流通过SOI衬底进行保护。 由于ESD保护器件和本征MOS晶体管位于同一平面内,所以该制造工艺可以插入当前的MOS工艺流程中。
    • 88. 发明申请
    • Optimizing real-time rendering of texture mapped object models relative to adjustable distortion thresholds
    • 优化纹理映射对象模型相对于可调失真阈值的实时渲染
    • US20050280648A1
    • 2005-12-22
    • US10990244
    • 2004-11-15
    • Xi WangXin TongStephen LinBaining GuoHeung-Yeung Shum
    • Xi WangXin TongStephen LinBaining GuoHeung-Yeung Shum
    • G06T15/20G06T15/50G06T15/60G06T17/00G09G5/00
    • G06T15/04
    • A “mesostructure renderer” uses pre-computed multi-dimensional “generalized displacement maps” (GDM) to provide real-time rendering of general non-height-field mesostructures on both open and closed surfaces of arbitrary geometry. In general, the GDM represents the distance to solid mesostructure along any ray cast from any point within a volumetric sample. Given the pre-computed GDM, the mesostructure renderer then computes mesostructure visibility jointly in object space and texture space, thereby enabling both control of texture distortion and efficient computation of texture coordinates and shadowing. Further, in one embodiment, the mesostructure renderer uses the GDM to render mesostructures with either local or global illumination as a per-pixel process using conventional computer graphics hardware to accelerate the real-time rendering of the mesostructures. Further acceleration of mesostructure rendering is achieved in another embodiment by automatically reducing the number of triangles in the rendering pipeline according to a user-specified threshold for acceptable texture distortion.
    • “mesostructure渲染器”使用预先计算的多维“广义位移图”(GDM),以便在任意几何的开放和闭合表面上提供一般非高度场介观结构的实时渲染。 一般来说,GDM表示沿着体积样品内的任何点的任何射线投射到固体介观结构的距离。 给定预先计算的GDM,然后,介观结构渲染器在对象空间和纹理空间中联合计算介观结构可见度,从而实现纹理失真的控制和纹理坐标和阴影的有效计算。 此外,在一个实施例中,使用传统计算机图形硬件的介面结构渲染器使用GDM来渲染具有局部或全局照明的介观结构作为每像素处理,以加速介观结构的实时渲染。 在另一个实施例中,通过根据用户指定的可接受纹理失真的阈值自动减少渲染流水线中的三角形数量来实现进一步加速的介观结构渲染。