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    • 85. 发明申请
    • VERTICAL DIODE BASED MEMORY CELLS HAVING A LOWERED PROGRAMMING VOLTAGE AND METHODS OF FORMING THE SAME
    • 具有降低的编程电压的基于垂直二极管的存储器电池及其形成方法
    • US20090085154A1
    • 2009-04-02
    • US11864848
    • 2007-09-28
    • S. Brad HernerTanmay Kumar
    • S. Brad HernerTanmay Kumar
    • H01L27/102H01L21/8229
    • H01L27/1021G11C17/16H01L23/5252H01L29/868H01L2924/0002H01L2924/00
    • In a first aspect, a method for forming a non-volatile memory cell is provided. The method includes (1) forming a metal-insulator-metal (MIM) antifuse stack including (a) a first metal layer; (b) a silicon dioxide, oxynitride or silicon nitride antifuse layer formed above the first metal layer; and (c) a second metal layer formed above the antifuse layer. The method also includes (2) forming a contiguous p-i-n diode above the MIM stack, the contiguous p-i-n diode comprising deposited semiconductor material; (3) forming a layer of a silicide, silicide-germanide, or germanide in contact with the deposited semiconductor material; and (4) crystallizing the deposited semiconductor material in contact with the layer of silicide, silicide-germanide, or germanide. The memory cell comprises the contiguous p-i-n diode and the MIM stack. Other aspects are provided.
    • 在第一方面,提供了一种用于形成非易失性存储单元的方法。 该方法包括(1)形成包括(a)第一金属层的金属 - 绝缘体 - 金属(MIM)反熔丝堆叠; (b)形成在第一金属层上方的二氧化硅,氧氮化物或氮化硅反熔层; 和(c)形成在反熔丝层之上的第二金属层。 该方法还包括(2)在MIM堆叠之上形成连续的p-i-n二极管,连续的p-i-n二极管包括沉积的半导体材料; (3)形成与沉积的半导体材料接触的硅化物层,硅化锗 - 锗化物或锗化物层; 和(4)使沉积的半导体材料与硅化物,硅化锗 - 锗化物或锗化物层接触。 存储单元包括相邻的p-i-n二极管和MIM堆叠。 提供其他方面。