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81. 发明申请

US20110049556A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110049556A1
公开(公告)日：2011-03-03
申请号：US12712693
申请日：2010-02-25
申请人： Akira FUJIMOTO , Ryota Kitagawa , Koji Asakawa
发明人： Akira FUJIMOTO , Ryota Kitagawa , Koji Asakawa
IPC分类号： H01L33/40
CPC分类号： H01L33/38 , H01L33/40 , H01L2933/0083
摘要： The present invention provides a semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and hence the device is suitable for lighting instruments such as lights and lamps. This semiconductor device comprises a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and they penetrate through the metal electrode layer. That metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.
摘要翻译：本发明提供即使电力增加也能够保持高亮度强度的半导体发光装置，因此该装置适用于照明装置如灯和灯。该半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。开口的平均直径为10nm〜2μm，穿过金属电极层。该金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

82. 发明申请

US20090079322A1 LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 有权
标题翻译：具有高分子结构的发光金属电极及其制备方法
公开(公告)号：US20090079322A1
公开(公告)日：2009-03-26
申请号：US12187653
申请日：2008-08-07
申请人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
发明人： Eishi TSUTSUMI , Akira Fujimoto , Koji Asakawa
IPC分类号： H01J1/54 , H01B13/00 , B05D5/12
CPC分类号： H01L31/022491 , G02F1/13439 , H01J2211/225 , H01L51/5234
摘要： The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
摘要翻译：本发明提供对光透明的金属电极。金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。金属电极层不间断地继续，90％以上的金属部分以不超过可见波长的1/3的直线长度线性地继续直线而不断裂，用于380nm至780nm。这些开口的平均直径在入射光的波长的10nm以上且1/3以下的范围内，开口的中心之间的间距不小于平均直径，不大于1/2 的入射光波长。金属电极层的厚度在10nm以上且200nm以下的范围。

83. 发明授权

US07179672B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07179672B2
公开(公告)日：2007-02-20
申请号：US10976987
申请日：2004-11-01
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

84. 发明申请

US20050112886A1 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20050112886A1
公开(公告)日：2005-05-26
申请号：US10976987
申请日：2004-11-01
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L33/22 , B32B1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

85. 发明授权

US06825056B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US06825056B2
公开(公告)日：2004-11-30
申请号：US10330086
申请日：2002-12-30
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L2100
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure is formed into the following shape to change refractive index smoothly: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a block or graft copolymer comprising resin composition and forms a self-assembled microphase-separated structure; selectively removing at least one phase of the microphase-separated structure; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。粗糙结构形成为以下形状以平滑地改变折射率：（1）粗糙表面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从它们在光波长内的平均值分布。这种发光元件的表面通过使用包含树脂组合物的嵌段或接枝共聚物在发光元件的表面上形成薄膜而获得，并形成自组装的微相分离结构; 选择性地除去微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

86. 发明授权

US09318661B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09318661B2
公开(公告)日：2016-04-19
申请号：US13038154
申请日：2011-03-01
申请人： Kumi Masunaga , Ryota Kitagawa , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Kumi Masunaga , Ryota Kitagawa , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , H01L33/40
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer.
摘要翻译：半导体发光器件包括第一导电类型的第一半导体层，第一电极层，发光层，第二半导体层，第三半导体层和第二电极层。第一电极层包括具有多个开口部的金属部。开口部分穿透金属部分并且具有开口部分形状的当量圆直径。发光层位于第一半导体层和第一电极层之间。第二导电类型的第二半导体层位于发光层和第一电极层之间。第二导电类型的第三半导体层位于第二半导体层和第一电极层之间。第二电极层连接到第一半导体层。

87. 发明授权

US08680561B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08680561B2
公开(公告)日：2014-03-25
申请号：US13037914
申请日：2011-03-01
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Eishi Tsutsumi , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Eishi Tsutsumi , Takanobu Kamakura , Shinji Nunotani , Masaaki Ogawa
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.
摘要翻译：一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。发光层位于第一半导体层和第二半导体层之间。第一电极层位于与第一半导体层相对的第二半导体层的一侧。第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。金属部分接触第二半导体层。沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

88. 发明授权

US08089081B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08089081B2
公开(公告)日：2012-01-03
申请号：US12404807
申请日：2009-03-16
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.
摘要翻译：一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

89. 发明申请

US20100221856A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100221856A1
公开(公告)日：2010-09-02
申请号：US12717537
申请日：2010-03-04
申请人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
发明人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa , Hidefumi Yasuda , Yasuhiko Akaike , Takeyuki Suzuki
IPC分类号： H01L33/30 , H01L33/44 , H01L33/00
CPC分类号： H01L33/22 , H01L33/005
摘要： One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
摘要翻译：本发明的一个方面提供了一种提高亮度的半导体发光器件，并且还提供了其生产方法。该方法包括通过使用自组装膜在装置的光提取表面上形成浮雕结构的步骤。在该过程中，光提取表面部分地被保护膜覆盖，以保护其中形成电极的区域。然后在程序之后最后形成电极。该方法因此减小了由于电极的厚度而不能设置有浮雕结构的区域。在电极和光提取表面之间，形成接触层以在它们之间建立欧姆接触。

90. 发明申请

US20100065868A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100065868A1
公开(公告)日：2010-03-18
申请号：US12404807
申请日：2009-03-16
申请人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
发明人： Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takeyuki Suzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length)2) being equal to or larger than 0.7.
摘要翻译：一种半导体发光器件，包括：衬底; 电极层; 以及设置在所述基板和所述电极层之间的半导体多层膜，所述半导体多层膜包括：n型半导体层; p型半导体层; 以及设置在所述n型半导体层和所述p型半导体层之间的有源层，其中，所述半导体多层膜具有从所述半导体多层膜发射的光被提取的光提取面，所述光提取面形成有具有纳米级凸部的浮雕结构，其中所述浮雕结构形成为具有所述凸部的等效圆直径的变化，并且其中所述浮雕结构中的所述凸部中的90％以上的构造具有圆形度系数（ 4＆pgr×（面积）/（圆周长度）2）等于或大于0.7。

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