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81. 发明授权

US5144941A Combustion system for suppressing emission of gases believed to cause green-house-effect 失效
标题翻译：用于抑制被认为引起温室效应的气体排放的燃烧系统
公开(公告)号：US5144941A
公开(公告)日：1992-09-08
申请号：US677464
申请日：1991-03-29
申请人： Toshihiko Saito , Kazuo Saito
发明人： Toshihiko Saito , Kazuo Saito
IPC分类号： F23C99/00 , B03C3/017 , B03C3/15 , F23C6/04 , F23J15/02
CPC分类号： F23J15/027 , B03C3/017 , B03C3/15 , F23C6/04
摘要： A toxic gas exhaust suppression-type combustion system burns a hydrocarbon-based fuel and comprises, an incomplete combustion section for causing incomplete combustion by supplying the fuel and a small amount of air, a solid component removing section, connected to said incomplete combustion section, for collecting and removing a solid component, such as soot, within an unburned gas generated by said incomplete combustion section, and a complete combustion section for perfectly burning a remaining unburned gas by supplying a sufficient amount of air, the remaining unburned gas being obtained by removing the solid component from the unburned gas generated by said incomplete combustion section by flowing the unburned gas through said solid component removing section.
摘要翻译：有毒气体排放抑制型燃烧系统燃烧烃类燃料，包括通过供给燃料和少量空气引起不完全燃烧的不完全燃烧部分，连接到所述不完全燃烧部分的固体成分除去部分，用于在由所述不完全燃烧部分产生的未燃烧气体内收集和除去固体成分如烟灰，以及完全燃烧部分，用于通过供应足够量的空气来完全燃烧剩余的未燃烧气体，剩余的未燃烧气体通过通过使未燃烧的气体流过所述固体成分除去部，从所述不完全燃烧部产生的未燃烧气体中除去固体成分。

82. 发明授权

US4449484A Hot water supply system 失效
标题翻译：热水供应系统
公开(公告)号：US4449484A
公开(公告)日：1984-05-22
申请号：US444367
申请日：1982-11-26
申请人： Moriyoshi Sakamoto , Toshihiko Saito
发明人： Moriyoshi Sakamoto , Toshihiko Saito
IPC分类号： F23C15/00 , F24H1/20 , F24H9/18 , F22B5/00
CPC分类号： F23C15/00 , F24H1/206
摘要： A hot water supply system comprises a base of cylindrical shape; a storage tank supported on the base, the tank having an upper end plate and a lower end plate supported on the base and defining, together with an inner face of the base, a soundproofing chamber; and a pulse combustor including a pulse burner attached to the lower end plate, and a tail pipe which communicates with the burner and is arranged inside the storage tank next to the lower end plate, the tail pipe having an ascending portion extending from the pulse burner toward the upper end plate, and a descending portion extending from a top end of the ascending portion toward the lower end plate to guide condensed water condensed inside the tail pipe to outside the storage tank. The system further comprises a blower, a suction muffler, and an exhaust muffler which are arranged inside the soundproofing chamber, the base having a soundproofing layer to shield noise generated in the soundproofing chamber.
摘要翻译：热水供应系统包括圆柱形基座; 支撑在基座上的储罐，该罐具有支撑在基座上的上端板和下端板，并与基座的内表面一起限定隔音室; 以及包括安装在下端板上的脉冲燃烧器的脉冲燃烧器，以及与燃烧器连通并设置在储罐内部的下端板旁边的尾管，尾管具有从脉冲燃烧器延伸的上升部以及从上升部的顶端朝向下端板延伸的下降部，以将在尾管内凝结的冷凝水引导到储罐外。该系统还包括布置在隔音室内部的鼓风机，吸入消声器和排气消声器，底座具有隔音层，用于屏蔽隔音室中产生的噪声。

83. 发明授权

US4369027A Liquid fuel combustion apparatus 失效
标题翻译：液体燃料燃烧装置
公开(公告)号：US4369027A
公开(公告)日：1983-01-18
申请号：US58161
申请日：1979-07-17
申请人： Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto
发明人： Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto
IPC分类号： F23C3/00 , F23D5/00 , F23D7/00 , F23D11/00 , F23D11/06 , F23D5/02
CPC分类号： F23D5/00 , F23C3/00 , F23D11/008 , F23D11/06 , F23D7/00
摘要： In a liquid fuel combustion apparatus having a horizontal combustion cylinder including a peripheral wall provided with perforations through which air is supplied in the form of jets. A fuel supplying system includes a fuel reservoir provided at the lowermost portion of the combustion cylinder. Vaporized fuel is mixed with the air jets and is subsequently burnt as it is carried horizontally.
摘要翻译：在具有水平燃烧气缸的液体燃料燃烧装置中，该水平燃烧气缸包括设置有穿孔的周壁，空气以喷射的形式供给到空气中。燃料供给系统包括设置在燃烧筒的最下部的燃料储存器。气化燃料与空气喷射器混合，随后水平运送时燃烧。

84. 发明授权

US4368032A Liquid fuel combustion apparatus 失效
标题翻译：液体燃料燃烧装置
公开(公告)号：US4368032A
公开(公告)日：1983-01-11
申请号：US165036
申请日：1980-07-01
申请人： Hiroyuki Araya , Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto , Mitoshi Koyama
发明人： Hiroyuki Araya , Toshihiko Saito , Katsuyoshi Kumazawa , Moriyoshi Sakamoto , Mitoshi Koyama
IPC分类号： F23D5/02 , F23D5/04 , F23D5/14 , F23D7/00 , F23Q7/08
CPC分类号： F23D5/045
摘要： A liquid fuel combustion apparatus comprises a combustion cylinder, a fuel reservoir, a housing, a blower and an electrical ignition heater. The reservoir is disposed inside the cylinder to store a liquid fuel supplied from outside of the cylinder. The housing is disposed outside the cylinder to create a space therebetween and has an end wall opposite to an end wall of the cylinder. The blower is disposed outside, and in a spaced apart relation to, the housing and supply air to the space. The heater is supported by the end walls and ignite liquid fuel stored in the reservoir.
摘要翻译：液体燃料燃烧装置包括燃烧筒，燃料储存器，壳体，鼓风机和点火加热器。储存器设置在气缸内部以存储从气缸外部供应的液体燃料。壳体设置在气缸外部以在它们之间产生空间，并具有与气缸的端壁相对的端壁。鼓风机设置在壳体的外部并以间隔开的关系，并将空气供给到空间。加热器由端壁支撑并点燃储存在储液器中的液体燃料。

85. 发明授权

US09209206B2 Pulse converter circuit 有权
标题翻译：脉冲变换电路
公开(公告)号：US09209206B2
公开(公告)日：2015-12-08
申请号：US13107167
申请日：2011-05-13
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： H03K3/017 , H01L27/12 , H01L29/786
CPC分类号： H03K5/04 , H01L27/092 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L29/7869
摘要： A pulse converter circuit includes a logic circuit to which a first signal is input and from which a second signal is output. The logic circuit includes a p-channel transistor which determines whether a voltage of the second signal is set to a first voltage depending on a voltage of the gate; and an n-channel transistor which determines whether the voltage of the second signal is set to a second voltage, which is higher than the first voltage, depending on a voltage of the gate. The p-channel transistor includes a semiconductor layer containing an element of a group 14. The n-channel transistor includes an oxide semiconductor layer.
摘要翻译：脉冲转换器电路包括输入第一信号并输出第二信号的逻辑电路。逻辑电路包括一个p沟道晶体管，它确定第二个信号的电压是否根据栅极的电压被设置为第一个电压; 以及n沟道晶体管，其根据栅极的电压确定第二信号的电压是否被设定为高于第一电压的第二电压。 p沟道晶体管包括含有组14的元件的半导体层.n沟道晶体管包括氧化物半导体层。

86. 发明授权

US08983421B2 Semiconductor device and operating method thereof 有权
标题翻译：半导体器件及其操作方法
公开(公告)号：US08983421B2
公开(公告)日：2015-03-17
申请号：US13024549
申请日：2011-02-10
申请人： Toshihiko Saito , Kiyoshi Kato
发明人： Toshihiko Saito , Kiyoshi Kato
IPC分类号： H04B1/06 , G06K19/077 , B82Y10/00 , G11C13/00 , H01L27/12 , H01L51/05
CPC分类号： H01L27/1266 , B82Y10/00 , G06K19/07749 , G11C13/0014 , G11C13/004 , G11C13/0069 , G11C2213/79 , H01L27/12 , H01L27/1214 , H01L51/0591
摘要： In an organic memory which is included in a radio chip formed from a thin film, data are written to the organic memory by a signal inputted with a wired connection, and the data is read with a signal by radio transmission. A bit line and a word line which form the organic memory are each selected by a signal which specifies an address generated based on the signal inputted with a wired connection. A voltage is applied to a selected memory element. Thus writing is performed. Reading is performed by a clock signal or the like which are generated from a radio signal.
摘要翻译：在由薄膜形成的无线电芯片中包括的有机存储器中，通过用有线连接输入的信号将数据写入有机存储器，并且通过无线电传输用信号读取数据。构成有机存储器的位线和字线各自由指定基于由有线连接输入的信号生成的地址的信号来选择。电压被施加到选定的存储元件。因此执行写入。通过从无线电信号生成的时钟信号等执行读取。

87. 发明授权

US08797785B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08797785B2
公开(公告)日：2014-08-05
申请号：US13293173
申请日：2011-11-10
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： G11C11/24
CPC分类号： G11C11/401 , G11C5/02 , G11C5/063 , G11C8/14
摘要： Provided is a memory device in which memory capacity per unit area is increased without making the manufacturing process complicated. The memory device includes a plurality of memory cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of memory cells includes a switching element and a capacitor including a first electrode and a second electrode. In at least one of the plurality of memory cells, in accordance with a potential applied to one of the plurality of word lines, the switching element controls a connection between one of the plurality of bit lines and the first electrode, and the second electrode is connected to another one of the plurality of word lines.
摘要翻译：提供了一种在不使制造过程复杂的情况下增加每单位面积的存储容量的存储器件。存储装置包括多个存储单元，多个字线和多个位线。多个存储单元中的每一个包括开关元件和包括第一电极和第二电极的电容器。在多个存储单元中的至少一个存储单元中，根据施加到多个字线之一的电位，开关元件控制多个位线之一与第一电极之间的连接，第二电极为连接到多个字线中的另一个。

88. 发明授权

US08766255B2 Oxide semiconductor device including gate trench and isolation trench 有权
标题翻译：氧化物半导体器件包括栅极沟槽和隔离沟槽
公开(公告)号：US08766255B2
公开(公告)日：2014-07-01
申请号：US13418558
申请日：2012-03-13
申请人： Atsuo Isobe , Toshihiko Saito , Kiyoshi Kato
发明人： Atsuo Isobe , Toshihiko Saito , Kiyoshi Kato
IPC分类号： H01L29/786
CPC分类号： H01L27/1156 , H01L21/76232 , H01L27/1225 , H01L29/4236
摘要： A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.
摘要翻译：一种其中可以实现保持存储数据的性质的改进的半导体器件。此外，半导体器件的功耗降低。使用能够充分降低沟道形成区域中的晶体管（例如，氧化物半导体材料）的截止电流的宽间隙半导体材料的晶体管，其具有沟槽结构，即，沟槽结构栅电极和用于元件隔离的沟槽。使用能够充分降低晶体管的截止电流的半导体材料能够长时间保持数据。此外，由于晶体管具有用于栅极电极的沟槽，所以即使当源电极和漏电极之间的距离减小时，也可以通过适当地设置沟槽的深度来抑制短沟道效应的发生。

89. 发明授权

US08750022B2 Semiconductor memory device and semiconductor device 有权
标题翻译：半导体存储器件和半导体器件
公开(公告)号：US08750022B2
公开(公告)日：2014-06-10
申请号：US13079032
申请日：2011-04-04
申请人： Toshihiko Saito , Yasuyuki Takahashi
发明人： Toshihiko Saito , Yasuyuki Takahashi
IPC分类号： G11C7/12
CPC分类号： G11C7/12 , H01L27/112 , H01L27/11206 , H01L27/1214
摘要： A semiconductor memory device or a semiconductor device which has high reading accuracy is provided. A bit line, a word line, a memory cell placed in an intersection portion of the bit line and the word line, and a reading circuit electrically connected to the bit line are provided. The memory cell includes a first transistor and an antifuse. The reading circuit includes a pre-charge circuit, a clocked inverter, and a switch. The pre-charge circuit includes a second transistor and a NAND circuit. The semiconductor memory device includes transistor in each of which an oxide semiconductor is used in a channel formation region, as the first transistor and the second transistor.
摘要翻译：提供了具有高读取精度的半导体存储器件或半导体器件。提供位线，字线，放置在位线和字线的交叉部分中的存储单元，以及电连接到位线的读取电路。存储单元包括第一晶体管和反熔丝。读取电路包括预充电电路，时钟反相器和开关。预充电电路包括第二晶体管和NAND电路。半导体存储器件包括在沟道形成区域中使用氧化物半导体作为第一晶体管和第二晶体管的晶体管。

90. 发明授权

US08687411B2 Memory device, semiconductor device, and detecting method for defective memory cell in memory device 失效
标题翻译：存储器件，半导体器件和存储器件中的缺陷存储器单元的检测方法
公开(公告)号：US08687411B2
公开(公告)日：2014-04-01
申请号：US13344652
申请日：2012-01-06
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： G11C11/24
CPC分类号： G11C11/401 , G11C11/405 , G11C29/50016
摘要： To provide a memory device which can perform verification operation for detecting a memory cell whose data holding time is shorter than a predetermined length, accurately in a short time. Each memory cell includes at least a first capacitor, a second capacitor, and a transistor which functions as a switching element for controlling supply, storage, and release of charge in the first capacitor and the second capacitor. The capacitance of the first capacitor is thousand or more times the capacitance of the second capacitor, preferably ten thousand or more times the capacitance of the second capacitor. In normal operation, charge is stored using the first capacitor and the second capacitor. In performing verification operation for detecting a memory cell whose data holding time is shorter than a predetermined length, charge is stored using the second capacitor.
摘要翻译：为了提供一种能够在短时间内准确地进行用于检测数据保持时间短于预定长度的存储单元的验证操作的存储装置。每个存储单元至少包括第一电容器，第二电容器和用作控制第一电容器和第二电容器中的电荷的供应，存储和释放的开关元件的晶体管。第一电容器的电容是第二电容器的电容的千倍以上，优选为第二电容器的电容的一倍以上。在正常操作中，使用第一电容器和第二电容器存储电荷。在执行用于检测数据保持时间短于预定长度的存储单元的验证操作时，使用第二电容器存储电荷。

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