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81. 发明专利

JPS63187518A MANUFACTURE OF CONTACT FOR VACUUM BREAKER 失效
公开(公告)号：JPS63187518A
公开(公告)日：1988-08-03
申请号：JP1754187
申请日：1987-01-28
申请人： TOSHIBA CORP
发明人： KURI YUUJI , CHIBA SEIJI
IPC分类号： H01H11/06 , H01H33/66

82. 发明专利

JP2019021683A 半導体パッケージ审中-公开
公开(公告)号：JP2019021683A
公开(公告)日：2019-02-07
申请号：JP2017136506
申请日：2017-07-12
申请人： TOSHIBA CORP , TOSHIBA ENERGY SYSTEM & SOLUTION CORP
发明人： WATANABE NAOTAKE , TADA NOBUMITSU , ICHIKURA YUTA , ITO HIROAKI , TAKIMOTO KAZUYASU , HIRATSUKA DAISUKE , OBE TOSHIHARU , KURI YUUJI , SEKIYA HIRONORI , IIO HISATAKA , MATSUMURA HITOTSUGU
IPC分类号： H01L23/28 , H01L25/07 , H01L25/18
摘要：【課題】半導体チップに不具合が生じても、被害の拡大を抑制できる半導体パッケージを提供する。【解決手段】半導体パッケージは、半導体チップと、第1金属板と、第2金属板と、第1柱状部材と、封止部材と、を備える。前記半導体チップの第1面には第1電極が設けられ、第2面には第2電極が設けられている。前記第1金属板は、前記半導体チップの前記第1面上に配置され、前記第1電極に接続されている。前記第2金属板は、前記半導体チップの前記第2面上に配置され、前記第2電極に接続されている。前記第1柱状部材は、前記半導体チップの側方において前記第1金属板に固定され、前記第1金属板から前記第2金属板に向かう第1方向に延び、先端が前記第2面よりも前記第1方向側に配置され、前記第2金属板から離隔している。前記封止部材は、前記半導体チップ及び前記第1柱状部材を覆う。【選択図】図1

83. 发明专利

JP2019004023A 半導体ユニット审中-公开
公开(公告)号：JP2019004023A
公开(公告)日：2019-01-10
申请号：JP2017116875
申请日：2017-06-14
申请人： TOSHIBA CORP , TOSHIBA ENERGY SYSTEM & SOLUTION CORP
发明人： ITO HIROAKI , ICHIKURA YUTA , WATANABE NAOTAKE , OBE TOSHIHARU , TAKIMOTO KAZUYASU , TADA NOBUMITSU , HIRATSUKA DAISUKE , SEKIYA HIRONORI , KURI YUUJI , IIO HISATAKA , MATSUMURA HITOTSUGU
IPC分类号： H01L23/28 , H01L25/07 , H01L25/18
摘要：【課題】安全性が高く、大電流出力が可能な半導体ユニットを提供すること。【解決手段】半導体ユニットは、絶縁樹脂製のケース内に設けられ、第1電極板、第2電極板、半導体チップの積層構造を封止する樹脂と、ケースと積層構造との間における少なくともチップ配置領域に対向する位置で樹脂中に埋め込まれ、ケースよりも破断応力が大きい材料からなる補強板と、を備えている。【選択図】図4

84. 发明专利

JP2006185634A CONTACT MEMBER, CONTACT, AND ELECTRIC APPARATUS 审中-公开
公开(公告)号：JP2006185634A
公开(公告)日：2006-07-13
申请号：JP2004374982
申请日：2004-12-24
申请人： TOSHIBA CORP
发明人： KURI YUUJI , TAN TORONRON , TANAKA AKIRA
IPC分类号： H01H1/26 , C22C13/00 , H01H50/56 , H01R13/03
摘要： PROBLEM TO BE SOLVED: To provide a contact member enabling highly reliable solder joint by suppressing generation of cracks and peeling, and a contact and an electric apparatus using it. SOLUTION: This contact member is equipped with a substrate 20 formed of a copper based alloy while having spring elasticity, and a metallic film 21 containing Co and/or Ni and comprising Sn or a Sn based alloy containing no Pb, to enable highly reliable solder joint. COPYRIGHT: (C)2006,JPO&NCIPI

85. 发明专利

JP2002250693A METHOD OF DETECTING METAL-EXPOSED PART OF ELECTRONIC CIRCUIT COMPONENT, AND ENVIRONMENT-RESISTANT ELECTRONICAL CIRCUIT COMPONENT 失效
公开(公告)号：JP2002250693A
公开(公告)日：2002-09-06
申请号：JP2001049536
申请日：2001-02-26
申请人： TOSHIBA CORP
发明人： KURI YUUJI , MOTOKI MITSUO
IPC分类号： G01N21/956 , G01N21/78 , G01N33/20
摘要： PROBLEM TO BE SOLVED: To provide a method of detecting a metal-exposed part of an electronic circuit component mounted on a printed circuit board or the like with high sensitivity, and to provide the environment-resistant electronic circuit component having high resistance with respect to external corrosion environment. SOLUTION: In this method, the electronic circuit component is exposed to an oxidizing environment (S2) to detect the metal-exposed part of the electronic circuit component. A protection coating film 33 comprising an oxide is formed also in the detected metal-exposed part 31.

86. 发明专利

JP2000214205A SEMICONDUCTOR DETERIORATION DETECTING METHOD, SEMICONDUCTOR REMAINING LIFE CALCULATING METHOD, AND ELEMENT AND SUBSTRATE FOR USE THEREIN 失效
公开(公告)号：JP2000214205A
公开(公告)日：2000-08-04
申请号：JP1506599
申请日：1999-01-25
申请人： TOSHIBA CORP
发明人： SAWADA AKIRA , KURI YUUJI , MINAMI YUJI , SASAKI KEIICHI
IPC分类号： G01R31/26 , G01R31/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor deterioration detecting method, a semiconductor remaining life calculating method, and a deterioration detection element, etc., for use therein, capable of detecting the deterioration level of an internal semiconductor element and calculating the remaining life without hindering the function of an electronic device. SOLUTION: In an electronic device, in order to measuring a deterioration level in advance, there is provided the semiconductor deterioration detecting element having a plurality of internal wires 3 connecting between lead frames 4 of a semiconductor package 1 with a wiring material. A voltage applied from a power source 2 for use in the electronic device is stepwise changed with respect to a plurality of internal wires 3 to energize, so that the corrosion amount of the internal wire 3 is detected, thereby detecting the deterioration level of a semiconductor element mounted on the electronic device.

87. 发明专利

JP2000214160A DEGRADATION DETECTING METHOD FOR SUBSTRATE SOLDER JOINT PART 失效
公开(公告)号：JP2000214160A
公开(公告)日：2000-08-04
申请号：JP1506499
申请日：1999-01-25
申请人： TOSHIBA CORP
发明人： KURI YUUJI , ADACHI KENJI , TODO YOKO
IPC分类号： H05K3/34 , G01N17/00 , G01N27/04 , G01N33/20
摘要： PROBLEM TO BE SOLVED: To provide a method for detecting degradation of a substrate solder joint wherein degradation of a product is detected in advance without disassembly/investigation of a real product. SOLUTION: A real product substrate 1 is added with a degradation-detecting sample substrate 2 comprising a solder joint 3 similar to the real product substrate 1 for detecting of a solder joint. A sample piece is periodically cut out of the degradation-detecting sample substrate 2 for detecting degradation in tensile strength. The degradation in creep strength and thermal fatigue, etc., are detected as well with the degradation-detecting sample substrate 2 for detecting degradation of the solder joint.

88. 发明专利

JPH10244217A METHOD FOR CONTROL OF WHISKER OF PLATING AND ELECTRICAL APPARATUS STRUCTURAL PART TO WHICH THE SAME IS APPLIED 失效
公开(公告)号：JPH10244217A
公开(公告)日：1998-09-14
申请号：JP4895497
申请日：1997-03-04
申请人： TOSHIBA CORP
发明人： KURI YUUJI
IPC分类号： B05D5/00 , B05D7/00 , B05D7/14 , C23C28/00
摘要： PROBLEM TO BE SOLVED: To surely easily control whisker generated from a surface of plating by preventing oxidation of the surface of plating by a method wherein a plated surface of a member to which plating treatment is applied is coated with a resin coating material for prevention of oxidation. SOLUTION: A chromate coat 3 is formed on a surface of galvanizing 1 of a matrix 2 of an electrical apparatus structural part to which treatment of zinc-plating for prevention or control of corrosion owing to environment is applied. Thereafter, it is coated with fluororesin having a glass transition point of 200 deg.C or higher and a heat resistance temperature of 100 deg.C or higher as a resin coating material 4 for preventing oxidation. In this case, a film thickness of the coating of the resin coating material 4 is preferably at least 5μm or over. Herein, the chromate coat 3 is provided in order to raise the adhesiveness between the zinc-plating 1 and the resin coating material 4.

89. 发明专利

JPH0874069A CERAMIC COATING FILM 失效
公开(公告)号：JPH0874069A
公开(公告)日：1996-03-19
申请号：JP20625194
申请日：1994-08-31
申请人： TOSHIBA CORP
发明人： KURI YUUJI , WATANABE MICHIO
IPC分类号： C04B35/74 , C23C30/00
摘要： PURPOSE: To obtain a ceramic coating film maintaining superior sliding characteristics, preventing cracking and peeling and having high reliability over a long period of time by forming a ceramic coating film contg. a pure metal on the surface of a substrate. CONSTITUTION: A ceramic coating film 2 is formed on the surface of a substrate 1. This ceramic coating film 2 is made of a mixture of ceramic particles 3 with pure metal particles 4. The pure metal is preferably the same element as the principal component of the ceramic coating film and the pure metal content is preferably regulated to

90. 发明专利

JPH07147118A MANUFACTURE OF VACUUM CONTAINER 失效
公开(公告)号：JPH07147118A
公开(公告)日：1995-06-06
申请号：JP29285593
申请日：1993-11-24
申请人： TOSHIBA CORP
发明人： WATANABE MICHIO , OSABE KIYOSHI , NIWA SHOJI , KURI YUUJI
IPC分类号： H01H33/66
摘要： PURPOSE:To improve the workability and the reliability by forming a Ti coating in either one side of a silver-alloy brazing material put between an insulating container and a metallic member and joining the insulating container and the metallic member while setting the Ti side on the insulating container side. CONSTITUTION:A Ti coating is formed on at least one side of a silver-alloy brazing material to be put between a ceramic member which composes an insulating container and a metal member by, for example, a vacuum evaporation method by previously heating the material to 300-500 deg.C in about 10 -10 Torr vacuum. After the silver-alloy brazing material is so set as to put the Ti side in the ceramic member side, the metal member and the ceramic member are brought into contact with each other and the silver-alloy brazing material is melted in conditions, for example, 1X10 to 3X10 Torr vacuum and at lowest 850 deg.C. Then, the ceramic member and the metal member are sealed while vacuum-exhausting is carried out through the Ti coating face. At that time, the Ti coating thickness is set to be 0.5-30mum, preferably, 5-10mum.

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