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81. 发明授权

US06812505B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06812505B2
公开(公告)日：2004-11-02
申请号：US10605019
申请日：2003-09-02
申请人： Kaoru Inoue , Katsunori Nishii , Hiroyuki Masato
发明人： Kaoru Inoue , Katsunori Nishii , Hiroyuki Masato
IPC分类号： H01L29737
CPC分类号： H01L29/7783 , H01L29/045 , H01L29/2003 , H01L29/42316
摘要： A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein: surfaces of the buffer layer are c facets of Ga atoms; a channel layer including GaN or InGaN formed on the buffer layer, wherein: surfaces of the channel layer are c facets of Ga or In atoms; an electron donor layer including AlGaN formed on the channel layer, wherein: surfaces of the electron donor layer are c facets of Al or Ga atoms; a source electrode and a drain electrode formed on the electron donor layer; a cap layer including GaN or InGaAlN formed between the source electrode and the drain electrode, wherein: surfaces of the cap layer are c facets of Ga or In atoms and at least a portion of the cap layer is in contact with the electron donor layer; and a gate electrode formed at least a portion of which is in contact with the cap layer.
摘要翻译：半导体器件包括：衬底; 包括形成在衬底上的GaN的缓冲层，其中：缓冲层的表面是Ga原子的c个面; 在缓冲层上形成包括GaN或InGaN的沟道层，其中：沟道层的表面是Ga或In原子的c面; 包括形成在沟道层上的AlGaN的电子给体层，其中：电子给体层的表面是Al或Ga原子的c个面; 形成在电子供体层上的源电极和漏电极; 形成在源电极和漏电极之间的包含GaN或InGaAlN的覆盖层，其中：覆盖层的表面是Ga或In原子的c面，并且覆盖层的至少一部分与电子给体层接触; 以及形成为至少一部分与盖层接触的栅电极。

82. 发明授权

US06787820B2 Hetero-junction field effect transistor having an InGaAIN cap film 有权
标题翻译：具有InGnAIN盖场的异质结场效应晶体管
公开(公告)号：US06787820B2
公开(公告)日：2004-09-07
申请号：US10059226
申请日：2002-01-31
申请人： Kaoru Inoue , Yoshito Ikeda , Hiroyuki Masato
发明人： Kaoru Inoue , Yoshito Ikeda , Hiroyuki Masato
IPC分类号： H01L2906
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A semiconductor device includes an AlGaN film formed on a GaN film on a substrate, a gate electrode formed on the AlGaN film, and source and drain electrodes formed on either side of the gate electrode on the AlGaN film. An n-type InxGayAl1-x-yN film is interposed between the source and drain electrodes and the AlGaN film. Alternatively, the semiconductor device includes an n-type InxGayAl1-x-yN film formed on a GaN film on a substrate, a gate electrode formed on the InxGayAl1-x-yN film, and source and drain electrodes formed on either side of the gate electrode on the InxGayAl1-x-yN film.
摘要翻译：半导体器件包括形成在基板上的GaN膜上的AlGaN膜，形成在AlGaN膜上的栅电极，以及形成在AlGaN膜上的栅电极的两侧的源极和漏极。在源电极和漏电极和AlGaN膜之间插入n型In x Ga y Al 1-x-y N膜。或者，半导体器件包括形成在衬底上的GaN膜上的n型In x Ga y Al 1-x-y N膜，形成在In x Ga y Al 1-x-y N膜上的栅电极，以及形成在栅极两侧的源极和漏极 InxGayAl1-x-yN膜上的电极。

83. 发明授权

US06667132B2 Non-aqueous electrolyte secondary batteries 有权
标题翻译：非水电解质二次电池
公开(公告)号：US06667132B2
公开(公告)日：2003-12-23
申请号：US10046492
申请日：2002-01-14
申请人： Masaya Okochi , Masaki Kitagawa , Takashi Takeuchi , Kaoru Inoue , Hizuru Koshina
发明人： Masaya Okochi , Masaki Kitagawa , Takashi Takeuchi , Kaoru Inoue , Hizuru Koshina
IPC分类号： H01M1040
CPC分类号： H01M10/05 , H01M2/34 , H01M4/64 , H01M6/10 , H01M10/0431 , H01M2200/00
摘要： A non-aqueous secondary battery having an electrode group comprising a portion of exposed metal foil electrically connected to the positive electrode collector and covering the entire outer surface of the electrode group. Separator material is sandwiched between the foil and the negative electrode, which is positioned outwardly of the positive electrode, and separator material is also positioned between the foil covering of the electrode group and a negative polarity cell container. The positioning of the metal foil is such that if the battery is crushed, the separator material on the outermost side of the metal foil or between the metal foil and the negative electrode is broken first, so that the metal foil short-circuits with the inner wall of the cell container or the negative electrode, respectively.
摘要翻译：一种非水二次电池，具有电极组，该电极组包括与正电极集电体电连接并覆盖电极组的整个外表面的暴露的金属箔的一部分。隔板材料被夹在位于正极外侧的箔和负电极之间，隔板材料也位于电极组的箔覆盖层和负极电池容器之间。金属箔的定位使得如果电池被粉碎，则金属箔的最外侧或金属箔与负极之间的隔板材料首先被破坏，使得金属箔与内部的金属箔短路电池容器的壁或负电极。

84. 发明授权

US06653714B2 Lateral bipolar transistor 失效
标题翻译：侧面双极晶体管
公开(公告)号：US06653714B2
公开(公告)日：2003-11-25
申请号：US10300440
申请日：2002-11-20
申请人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
发明人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a base region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译：横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起基底区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。

85. 发明授权

US06506520B1 Non-aqueous electrolyte secondary battery 有权
标题翻译：非水电解质二次电池
公开(公告)号：US06506520B1
公开(公告)日：2003-01-14
申请号：US09601273
申请日：2000-09-21
申请人： Kaoru Inoue , Hiroshi Yoshizawa , Hizuru Koshina , Harunari Shimamura , Yoshiaki Nitta
发明人： Kaoru Inoue , Hiroshi Yoshizawa , Hizuru Koshina , Harunari Shimamura , Yoshiaki Nitta
IPC分类号： H01M1024
CPC分类号： H01M4/134 , H01M4/02 , H01M4/131 , H01M4/362 , H01M4/366 , H01M4/38 , H01M4/386 , H01M4/387 , H01M4/42 , H01M10/052 , H01M10/44 , H01M2004/027
摘要： A negative electrode is characterized by its composite particles constructed in such a manner that at least part of the surrounding surface of nuclear particles containing at least one of tin, silicon and zinc as a constituent element, is coated with a solid solution or an inter-metallic compound, which is composed of, the element included in the nuclear particles, and at least one other element except the elements included in the nuclear particles selected from a group comprising group 2 elements, transition elements, group 12 elements, group 13 elements and group 14 elements except carbon of the Periodic Table. The present invention is characterized that the lithium content of the nuclear particles of the composite particles is 40-95 atomic percent of the theoretical limit of lithium content of each constituent element of the nuclear particles. Further, the batteries are first charged at a constant current and upon reaching the predetermined voltage, are charged at a constant voltage. The current density during charging are set at not more than 5 mA/cm2 as a in the area where the positive and negative electrodes face each other.
摘要翻译：负极的特征在于其复合颗粒以这样的方式构成，使得至少部分包含锡，硅和锌中的至少一种作为构成元素的核颗粒的周围表面涂覆有固溶体或间 - 金属化合物，其由包含在核粒子中的元素构成，以及除了选自包含第2族元素，过渡元素，第12族元素，第13族元素的族的核粒子中的元素以外的至少一种其它元素，第14组元素除了周期表的碳。本发明的特征在于，复合粒子的核粒子的锂含量为核粒子的各构成元素的锂含量的理论极限的40〜95原子％。此外，电池首先以恒定电流充电并且在达到预定电压时以恒定电压充电。在正极和负极彼此面对的区域中，充电时的电流密度设定为5mA / cm 2以下。

86. 发明授权

US06503808B1 Lateral bipolar transistor and method for producing the same 失效
标题翻译：侧面双极晶体管及其制造方法
公开(公告)号：US06503808B1
公开(公告)日：2003-01-07
申请号：US09687251
申请日：2000-10-13
申请人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
发明人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
IPC分类号： H01L21331
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a bass region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译：横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起低音区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。

87. 发明授权

US5883174A Polypropylene resin composition 失效
标题翻译：聚丙烯树脂组合物
公开(公告)号：US5883174A
公开(公告)日：1999-03-16
申请号：US680971
申请日：1996-07-16
申请人： Tomohiko Akagawa , Ikunori Sakai , Saburo Hinenoya , Yasuo Kita , Kaoru Inoue , Takeyoshi Nishio , Takao Nomura
发明人： Tomohiko Akagawa , Ikunori Sakai , Saburo Hinenoya , Yasuo Kita , Kaoru Inoue , Takeyoshi Nishio , Takao Nomura
IPC分类号： C08K3/34 , C08L23/16 , C08L53/00 , C08J5/10 , C08L23/12
CPC分类号： C08L53/00
摘要： A polypropylene resin composition having excellent rigidity, impact resistance and formability (moldability) and thus useful for the interior parts of automobile, includes (A) a crystalline E/P block copolymer containing a fraction Ac soluble in p-xylene at room temperature and having an ethylene content of 18 to 22%; (B) a crystalline E/P block copolymer containing a fraction Bc soluble in p-xylene at room temperature and having an ethylene content of 27 to 40% and (C) talc particles having an average size of 3 to 5 .mu.m and largest size less than 20 .mu.m, in which composition, (a) the p-xylene-soluble fractions Ac and Bc are in contents As and Bs based on the total weight of the copolymers (A) and (B) and satisfying As+Bs=7 to 17% by weight and As/(A +Bs)=0.1 to 0.6; (b) an isotactic pentad fraction of propylene in each of copolymers (A) and (B) is 96% or more, and the mixture of the copolymers (A) and (B) has a MFR of 20 to 35 g/10 min at 230.degree. C. under 2160 g load; and (c) the copolymers (A) and (B) are in a total weight content of 50 to 95% and talc (C) is in a weight content of 5 to 50%.
摘要翻译：具有优异的刚性，耐冲击性和成型性（成型性），因此可用于汽车内部的聚丙烯树脂组合物包括（A）在室温下含有可溶于对二甲苯的馏分Ac的结晶E / P嵌段共聚物，并具有乙烯含量为18〜22％; （B）在室温下含有可溶于对二甲苯的馏分Bc，乙烯含量为27〜40％的结晶性E / P嵌段共聚物，（C）平均粒径为3〜5μm的滑石粉末和最大（a）对二甲苯可溶级分Ac和Bc的含量为A，Bs为基于共聚物（A）和（B）的总重量，满足As + Bs = 7〜17重量％，As /（A + Bs）= 0.1〜0.6; （b）共聚物（A）和（B）中的丙烯的全同立构五单元组分率为96％以上，共聚物（A）和（B）的混合物的MFR为20〜35g / 10分钟在230℃，2160g负荷下; 和（c）共聚物（A）和（B）的总重量含量为50-95％，滑石（C）的重量含量为5-50％。

88. 发明授权

US5608123A Process for catalytic hydration of olefins 失效
标题翻译：烯烃催化水合方法
公开(公告)号：US5608123A
公开(公告)日：1997-03-04
申请号：US496189
申请日：1995-06-28
申请人： Kaoru Inoue , Masao Iwasaki , Naohiro Ueda
发明人： Kaoru Inoue , Masao Iwasaki , Naohiro Ueda
IPC分类号： C07C29/04
CPC分类号： C07C29/04
摘要： There is provided a process for reacting water and olefin such as ethylene or propylene under mild conditions in the presence of a polyorganosiloxane contaminating sulfonic acid groups to produce alcohol corresponding to the olefin with high yield and selectivity.
摘要翻译：提供了一种在温和条件下，在聚有机硅氧烷污染磺酸基团的存在下使水和烯烃如乙烯或丙烯反应的方法，以高产率和选择性产生对应于烯烃的醇。

89. 发明授权

US5429957A Method of manufacturing an heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管的制造方法
公开(公告)号：US5429957A
公开(公告)日：1995-07-04
申请号：US286955
申请日：1994-08-08
申请人： Toshinobu Matsuno , Atsushi Nakagawa , Takashi Hirose , Kaoru Inoue
发明人： Toshinobu Matsuno , Atsushi Nakagawa , Takashi Hirose , Kaoru Inoue
IPC分类号： H01L29/205 , H01L21/331 , H01L29/10 , H01L29/73 , H01L29/737 , H01L21/203 , H01L29/201 , H01L29/207
CPC分类号： H01L29/7371 , H01L29/1004 , Y10S148/072 , Y10S438/936
摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance, heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.
摘要翻译：介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。因此，获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。

90. 发明授权

US5371389A Heterojunction bipolar transistor with base layer having graded bandgap 失效
标题翻译：异质结双极晶体管，基极层具有梯度带隙
公开(公告)号：US5371389A
公开(公告)日：1994-12-06
申请号：US101685
申请日：1993-08-04
申请人： Toshinobu Matsuno , Atsushi Nakagawa , Takashi Hirose , Kaoru Inoue
发明人： Toshinobu Matsuno , Atsushi Nakagawa , Takashi Hirose , Kaoru Inoue
IPC分类号： H01L29/205 , H01L21/331 , H01L29/10 , H01L29/73 , H01L29/737 , H01L29/161 , H01L29/225
CPC分类号： H01L29/7371 , H01L29/1004 , Y10S148/072 , Y10S438/936
摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.
摘要翻译：介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。从而获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。

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