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81. 发明授权

US5912490A MOSFET having buried shield plate for reduced gate/drain capacitance 失效
公开(公告)号：US5912490A
公开(公告)日：1999-06-15
申请号：US905513
申请日：1997-08-04
申请人： Francois Hebert , Daniel Ng
发明人： Francois Hebert , Daniel Ng
IPC分类号： H01L23/552 , H01L27/088 , H01L29/06 , H01L29/40 , H01L29/78 , H01L29/72
CPC分类号： H01L29/7816 , H01L23/552 , H01L23/585 , H01L27/088 , H01L29/402 , H01L29/7801 , H01L29/7835 , H01L2924/0002 , H01L2924/3011
摘要： Gate to drain capacitance in a lateral DMOS and vertical DMOS field effect transistor is minimized by providing a conductive shield plate under the gate and between the gate and the drain of the transistor. In operation, the shield plate is preferably connected to a DC voltage potential and coupled to AC ground for RF power applications. The shield plate is readily fabricated in a conventional polysilicon gate process by adding one additional polysilicon deposition (or other suitable material), one additional mask, and one additional etch step. The shield plate can include a raised portion which provides lateral capacitive isolation between the gate and the drain. Alternatively, a shield contact can be provided above the shield plate and between the gate and drain to provide lateral isolation.

82. 发明授权

US08779510B2 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts 有权
标题翻译：采用自对准工艺制造的半导体功率器件和更可靠的电触点
公开(公告)号：US08779510B2
公开(公告)日：2014-07-15
申请号：US12802185
申请日：2010-06-01
申请人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
发明人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/456 , H01L29/47 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7808 , H01L29/7811 , H01L29/866 , H01L29/872 , H01L29/8725
摘要： This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.
摘要翻译：本发明公开了一种半导体功率器件，其包括设置在半导体衬底的顶表面附近的多个顶部电端子。顶部电气端子中的每一个包括在半导体衬底的顶表面附近形成为硅化物接触层的端子接触层。半导体功率器件的沟槽栅极从半导体衬底的顶表面打开，并且每个沟槽栅极包括被配置为硅化物接触层的硅化物层，硅化物层设置在略微低于半导体衬底的顶表面围绕沟槽栅极。

83. 发明申请

US20090050536A1 PROCESS FOR REFINING FATS AND OILS 有权
标题翻译：精炼油和油的工艺
公开(公告)号：US20090050536A1
公开(公告)日：2009-02-26
申请号：US12279205
申请日：2007-02-09
申请人： Daniel Ng
发明人： Daniel Ng
IPC分类号： C10G17/00 , B01J19/00
CPC分类号： C11B3/14 , C11B3/001 , C11C1/02
摘要： The present invention relates to a process for cooling fatty acid distillate from scrubbing section in a fats and oils refinery comprising cooling the fatty acid distillate by heat recovery in at least one heat-exchanging zone with refined oils having a temperature above about 50° C. heating the refined fats and oils to a temperature above about 70° C. The present invention relates further to a process for refining crude fats and oils, and refining plant for refining crude fats and oils.
摘要翻译：本发明涉及一种从脂肪和精油炼油厂的洗涤部分冷却脂肪酸馏出物的方法，包括通过在至少一个热交换区中与温度高于约50℃的精制油进行热回收来冷却脂肪酸馏出物。将精炼的脂肪和油加热至高于约70℃的温度。本发明还涉及精炼粗脂肪和油的方法，以及用于精制粗脂肪和油的精制装置。

84. 发明申请

US20050238012A1 Programmable packet parsing processor 有权
公开(公告)号：US20050238012A1
公开(公告)日：2005-10-27
申请号：US10927290
申请日：2004-08-25
申请人： Rina Panigrahy , Jackie Liu , Daniel Ng , Sanjay Jain , Nagaraj Bagepalli , Abhijit Patra
发明人： Rina Panigrahy , Jackie Liu , Daniel Ng , Sanjay Jain , Nagaraj Bagepalli , Abhijit Patra
IPC分类号： H04L12/56 , H04L29/06
CPC分类号： H04L63/0254 , H04L63/1408 , H04L69/22
摘要： The present invention provides a packet processing device and method. A parsing processor provides instruction-driven content inspection of network packets at 10-Gbps and above with a parsing engine that executes parsing instructions. A flow state unit maintains statefulness of packet flows to allow content inspection across several related network packets. A state-graph unit traces state-graph nodes to keyword indications and/or parsing instructions. The parsing instructions can be derived from a high-level application to emulate user-friendly parsing logic. The parsing processor sends parsed packets to a network processor unit for further processing.

85. 发明授权

US5898198A RF power device having voltage controlled linearity 失效
标题翻译：具有电压控制线性的RF功率器件
公开(公告)号：US5898198A
公开(公告)日：1999-04-27
申请号：US906741
申请日：1997-08-06
申请人： Francois Herbert , James R. Parker , Daniel Ng , Howard D. Bartlow
发明人： Francois Herbert , James R. Parker , Daniel Ng , Howard D. Bartlow
IPC分类号： H01L23/552 , H01L23/58 , H01L27/088 , H01L29/06 , H01L29/40 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7816 , H01L23/552 , H01L23/585 , H01L27/088 , H01L29/402 , H01L29/7801 , H01L29/7835 , H01L2924/0002 , H01L2924/3011
摘要： A linear MOSFET device includes a shield plate positioned between a drain and an overlying gate. A voltage bias is applied to the shield plate to maintain linear operation of the device for RF power amplification. An AC ground is preferably connected to the shield plate. The voltage bias can be varied for matching of parallel connected devices, for responding to peak input signals, and for temperature compensation.
摘要翻译：线性MOSFET器件包括位于漏极和上覆栅极之间的屏蔽板。对屏蔽板施加电压偏置，以保持用于RF功率放大的器件的线性操作。 AC接地优选地连接到屏蔽板。对于并联连接的器件的匹配，可以改变电压偏置，以响应峰值输入信号和温度补偿。

86. 发明授权

US5362173A Lockable quick release mechanism 失效
标题翻译：可锁定快速释放机构
公开(公告)号：US5362173A
公开(公告)日：1994-11-08
申请号：US945907
申请日：1992-09-17
申请人： Daniel Ng
发明人： Daniel Ng
IPC分类号： B62H3/04 , B60R9/048 , B60R9/10 , B62H3/00 , B62H3/08 , B62H5/00 , F16B2/18
CPC分类号： B62H5/001 , B60R9/048 , B60R9/10 , B62H3/00 , Y10S224/924 , Y10T403/58 , Y10T403/589 , Y10T403/598
摘要： In a quick release mechanism, a prong is retained around a skewer, the skewer extending from a fork block, between a bearing surface on the fork block and a bearing surface on a movable member. The movable member is mounted on the skewer and is axially movable thereon. The movable member is moved toward the fork block through a predetermined distance by a moving device which is mounted on the skewer and is axially movable relative thereto. The range of movement of the moving device is adjusted by an adjusting knob which is positioned at various axial positions on the skewer.
摘要翻译：在快速释放机构中，叉子围绕叉子保持，扦子从叉块延伸，在叉块上的支承表面和可移动构件上的支承表面之间。可动构件安装在串上并且可轴向移动。可移动部件通过安装在扦子上并可相对于其轴向移动的移动装置朝向叉块移动预定距离。移动装置的移动范围通过调节旋钮来调节，调节旋钮位于串上的各种轴向位置。

87. 发明授权

US5316192A Apparatus for pairwise transport of elongate objects 失效
标题翻译：成对输送细长物体的装置
公开(公告)号：US5316192A
公开(公告)日：1994-05-31
申请号：US916152
申请日：1992-07-31
申请人： Daniel Ng
发明人： Daniel Ng
IPC分类号： B60R9/04 , B60R9/048 , B60R9/12 , B60R9/00
CPC分类号： B60R9/12 , B60R9/048
摘要： A transport apparatus for elongate objects, primarily so-called snow-boards or monoskis, is provided with a load strut which extends transversely across a vehicle roof and is secured in the side edges thereof. The load strut has a holder device with at least one accommodation space for objects, with the longitudinal direction of the space in the direction of travel of the vehicle and with the lateral direction of the space inclining in relation to the vertical. In order to provide reliable retention and superior transport capacity without the risk of projecting parts of the objects coming into contact with the vehicle roof, the holder device is provided with a rigid anchorage arrangement which, with a lower portion, straddles and is secured on the strut. The holder device is further provided with three fingers inclining in relation to the vertical and obliquely upwardly directed, the fingers being provided with soft gripping members which define the accommodation spaces. The holder device is also provided with a strap which retains the objects in the accommodation spaces and is secured in the two outermost fingers, in one of these by means of an adjustable fastener.
摘要翻译： PCT No.PCT / SE91 / 00056 Sec。 371日期：1992年7月31日 102（e）日期1992年7月31日PCT 1991年1月25日PCT PCT。公开号WO91 / 11344 日本1991年8月8日。用于细长物体（主要是所谓的雪板或单体）的运输装置设置有横向跨越车顶延伸并固定在其侧边缘的负载支柱。负载支柱具有一个保持装置，其具有用于物体的至少一个容纳空间，空间的纵向方向在车辆的行进方向上并且空间的横向方向相对于垂直方向倾斜。为了提供可靠的保持和优良的运输能力，而没有使物体与车顶接触的部分突出的风险，保持装置设置有刚性锚固装置，其具有下部跨接并固定在支撑。保持器装置还设置有三个相对于垂直和倾斜向上指向倾斜的指状物，指状物设置有限定容纳空间的柔软的夹紧构件。保持装置还设置有将物体保持在容纳空间中并且通过可调节紧固件固定在两个最外面的指状物中的条带中的一个。

88. 发明申请

US20180269293A1 SEMICONDUCTOR POWER DEVICES MANUFACTURED WITH SELF-ALIGNED PROCESSES AND MORE RELIABLE ELECTRICAL CONTACTS 审中-公开
公开(公告)号：US20180269293A1
公开(公告)日：2018-09-20
申请号：US15844520
申请日：2017-12-16
申请人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
发明人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
IPC分类号： H01L29/423 , H01L29/40 , H01L29/66 , H01L29/78 , H01L21/8234 , H01L29/49 , H01L29/10 , H01L27/02 , H01L29/06 , H01L29/872 , H01L29/861
CPC分类号： H01L29/4236 , H01L21/26586 , H01L21/3065 , H01L21/823487 , H01L27/0255 , H01L27/0727 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/4238 , H01L29/4975 , H01L29/66136 , H01L29/66143 , H01L29/665 , H01L29/66666 , H01L29/66674 , H01L29/66734 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/861 , H01L29/872 , H01L29/8725
摘要： This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.

89. 发明授权

US6107160A MOSFET having buried shield plate for reduced gate/drain capacitance 失效
标题翻译： MOSFET具有掩埋屏蔽板，用于降低栅极/漏极电容
公开(公告)号：US6107160A
公开(公告)日：2000-08-22
申请号：US64709
申请日：1998-04-22
申请人： Francois Hebert , Daniel Ng
发明人： Francois Hebert , Daniel Ng
IPC分类号： H01L23/552 , H01L27/088 , H01L29/06 , H01L29/40 , H01L29/78 , H01L21/76 , H01L21/336 , H01L21/8234 , H01L29/76 , H01L29/94
CPC分类号： H01L29/7816 , H01L23/552 , H01L23/585 , H01L27/088 , H01L29/402 , H01L29/7801 , H01L29/7835 , H01L2924/0002 , H01L2924/3011
摘要： Gate to drain capacitance in a lateral DMOS and vertical DMOS field effect transistor is minimized by providing a conductive shield plate under the gate and between the gate and the drain of the transistor. In operation, the shield plate is preferably connected to a DC voltage potential and coupled to AC ground for RF power applications. The shield plate is readily fabricated in a conventional polysilicon gate process by adding one additional polysilicon deposition (or other suitable material), one additional mask, and one additional etch step. The shield plate can include a raised portion which provides lateral capacitive isolation between the gate and the drain. Alternatively, a shield contact can be provided above the shield plate and between the gate and drain to provide lateral isolation.
摘要翻译：通过在晶体管的栅极之下和晶体管的栅极和漏极之间提供导电屏蔽板，使侧向DMOS和垂直DMOS场效应晶体管中的栅极漏极电容最小化。在操作中，屏蔽板优选地连接到DC电压电位并且耦合到用于RF功率应用的AC地。通过添加一个额外的多晶硅沉积（或其它合适的材料），一个额外的掩模和一个附加的蚀刻步骤，屏蔽板容易地在传统的多晶硅栅极工艺中制造。屏蔽板可以包括在栅极和漏极之间提供横向电容隔离的凸起部分。或者，可以在屏蔽板上方以及栅极和漏极之间提供屏蔽接触以提供侧向隔离。

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