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81. 发明授权

US07545276B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07545276B2
公开(公告)日：2009-06-09
申请号：US11518512
申请日：2006-09-11
申请人： Yutaka Shionoiri , Kiyoshi Kato , Shunpei Yamazaki
发明人： Yutaka Shionoiri , Kiyoshi Kato , Shunpei Yamazaki
IPC分类号： G08B13/14
CPC分类号： H01Q9/27 , H01Q1/2225
摘要： The present invention provides a semiconductor device including an antenna, and at least a first integrated circuit and a second integrated circuit which are connected to the antenna, wherein the first integrated circuit includes a memory circuit which memorizes a first identification code and a first program for controlling an operation of the first integrated circuit, and wherein the second integrated circuit includes a memory circuit which memorizes a second identification code and a second program for controlling an operation of the second integrated circuit.
摘要翻译：本发明提供一种半导体器件，包括天线，以及至少第一集成电路和第二集成电路，其连接到天线，其中第一集成电路包括存储电路，存储电路存储第一识别码和第一程序，控制第一集成电路的操作，并且其中第二集成电路包括存储第二识别码的存储电路和用于控制第二集成电路的操作的第二程序。

82. 发明授权

US07507995B2 Semiconductor memory cell and semiconductor memory device 有权
标题翻译：半导体存储单元和半导体存储器件
公开(公告)号：US07507995B2
公开(公告)日：2009-03-24
申请号：US11447931
申请日：2006-06-07
申请人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L29/10
CPC分类号： H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/42332 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , H01L29/7881 , H01L29/792
摘要： An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.
摘要翻译：形成具有线状凹部的绝缘膜，通过沉积在其上形成半导体膜。半导体膜用激光照射以熔化半导体膜，将熔融的半导体注入凹部，结晶化。这使得伴随结晶的变形或应力集中在除了凹部之外的其它区域上。蚀刻掉该晶体半导体膜的表面，从而在凹部形成从侧面被凹部的侧壁覆盖的结晶半导体膜，并且与半晶不具有其他晶界。具有该晶体半导体膜作为其沟道区的TFT和存储TFT高度可靠，具有高的场效应迁移率，并且特性波动较小。因此，可以获得能高速运转的高度可靠的半导体存储器件。

83. 发明申请

US20080144349A1 Memory Device, Semiconductor Device, and Driving Method Thereof 有权
标题翻译：存储器件，半导体器件及其驱动方法
公开(公告)号：US20080144349A1
公开(公告)日：2008-06-19
申请号：US11883027
申请日：2006-01-24
申请人： Kiyoshi Kato , Konami Izumi , Shunpei Yamazaki
发明人： Kiyoshi Kato , Konami Izumi , Shunpei Yamazaki
IPC分类号： G11C17/08 , G11C7/22 , G11C11/40
CPC分类号： H01L27/1255 , B82Y10/00 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/53 , G11C2213/72 , G11C2213/79 , H01L27/1214 , H01L27/1266 , H01L27/285 , H01L51/0059
摘要： To provide a memory device which operates with low power consumption, has high reliability of the stored data, and is small-size, light-weight and inexpensive, and a driving method thereof. In addition, to provide a semiconductor device which operates with low power consumption, has high reliability of the stored data and a long distance of radio frequency communication, and is small-size, light-weight and inexpensive, and a driving method thereof. The memory device includes a memory cell array in which at least memory elements are arranged in matrix, and a writing circuit. The memory element has a first conductive layer, a second conductive layer, and an organic compound layer formed therebetween, and the writing circuit includes a voltage generating circuit for generating a voltage in order to apply at plural times, and a timing controlling circuit for controlling output time of the voltage.
摘要翻译：为了提供以低功耗工作的存储器件，具有高可靠性的存储数据，并且体积小，重量轻且便宜，并且其驱动方法。此外，为了提供以低功耗工作的半导体装置，具有高可靠性的存储数据和长距离的射频通信，并且体积小，重量轻且便宜，以及其驱动方法。存储器件包括至少存储器元件排列成矩阵的存储单元阵列和写入电路。存储元件具有形成在其间的第一导电层，第二导电层和有机化合物层，并且写入电路包括用于产生电压以便多次施加的电压产生电路，以及用于控制的定时控制电路电压的输出时间。

84. 发明申请

US20080093454A1 Wireless Processor, Wireless Memory, Information System, And Semiconductor Device 有权
标题翻译：无线处理器，无线存储器，信息系统和半导体器件
公开(公告)号：US20080093454A1
公开(公告)日：2008-04-24
申请号：US11571859
申请日：2005-07-07
申请人： Shunpei Yamazaki , Kiyoshi Kato , Jun Koyama , Yutaka Shionoiri
发明人： Shunpei Yamazaki , Kiyoshi Kato , Jun Koyama , Yutaka Shionoiri
IPC分类号： G06K19/07
CPC分类号： H01L27/1222 , G06K19/0723 , H01L23/5387 , H01L23/66 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/13 , H01L29/78621 , H01L29/78648 , H01L2223/6677 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.
摘要翻译：本发明提供一种处理器，其通过在对热敏感的基板（例如塑料基板或塑料膜基板）上形成使用多晶半导体的高功能集成电路。此外，本发明提供一种无线发送和接收电力或信号的无线处理器，无线存储器及其信息处理系统。根据本发明，一种信息处理系统包括一个元件形成区域，该元件形成区域包括晶体管，该晶体管至少具有由半导体膜形成的沟道形成区域，所述半导体膜片分隔成10至200nm的厚度的岛状物以及天线。晶体管固定在柔性基板上。其中形成包括元件形成区域的高功能集成电路并且半导体器件通过天线发送和接收数据的无线处理器。

85. 发明授权

US07298652B2 Non-volatile memory and semiconductor device 有权
标题翻译：非易失性存储器和半导体器件
公开(公告)号：US07298652B2
公开(公告)日：2007-11-20
申请号：US11109325
申请日：2005-04-19
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC分类号： G11C11/34
CPC分类号： G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C11/5671 , G11C16/0433 , G11C16/10 , G11C16/16 , G11C16/26 , G11C16/32
摘要： There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS. 1A and 1B are views of a circuit structure for controlling the writing. In FIGS. 1A and 1B, an output of an operational amplifier 103 is connected to a control gate of a memory transistor 101, a constant current source 102 is connected to a drain electrode, and a source electrode is grounded. The constant current source 102 and a voltage Vpgm are respectively connected to two input terminals of the operational amplifier 103.
摘要翻译：提供了一种在写入操作中实现高精度阈值控制的非易失性存储器。在本发明中，控制存储晶体管的漏极电压和漏极电流，进行热电子注入系统的写入动作，其中电荷注入速度不依赖于阈值电压。图图1A和1B是用于控制写入的电路结构的视图。在图如图1A和1B所示，运算放大器103的输出端连接到存储晶体管101的控制栅极，恒流源102连接到漏电极，源电极接地。恒流源102和电压Vpgm分别连接到运算放大器103的两个输入端。

86. 发明申请

US20070063920A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070063920A1
公开(公告)日：2007-03-22
申请号：US11518512
申请日：2006-09-11
申请人： Yutaka Shionoiri , Kiyoshi Kato , Shunpei Yamazaki
发明人： Yutaka Shionoiri , Kiyoshi Kato , Shunpei Yamazaki
IPC分类号： H01Q1/36
CPC分类号： H01Q9/27 , H01Q1/2225
摘要： The present invention provides a semiconductor device including an antenna, and at least a first integrated circuit and a second integrated circuit which are connected to the antenna, wherein the first integrated circuit includes a memory circuit which memorizes a first identification code and a first program for controlling an operation of the first integrated circuit, and wherein the second integrated circuit includes a memory circuit which memorizes a second identification code and a second program for controlling an operation of the second integrated circuit.
摘要翻译：本发明提供了一种半导体器件，包括天线，以及至少第一集成电路和第二集成电路，其连接到天线，其中第一集成电路包括存储电路，存储电路存储第一识别码和第一程序，控制第一集成电路的操作，并且其中第二集成电路包括存储第二识别码的存储电路和用于控制第二集成电路的操作的第二程序。

87. 发明授权

US07148510B2 Electronic apparatus having a protective circuit 有权
标题翻译：具有保护电路的电子设备
公开(公告)号：US07148510B2
公开(公告)日：2006-12-12
申请号：US11151260
申请日：2005-06-14
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译：具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极层间绝缘膜。形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

88. 发明申请

US20060267073A1 Semiconductor memory cell and semiconductor memory device 有权
公开(公告)号：US20060267073A1
公开(公告)日：2006-11-30
申请号：US11447931
申请日：2006-06-07
申请人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/42332 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , H01L29/7881 , H01L29/792
摘要： An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.

89. 发明授权

US07129122B2 Semiconductor memory cell and semiconductor memory device 有权
公开(公告)号：US07129122B2
公开(公告)日：2006-10-31
申请号：US10933388
申请日：2004-09-03
申请人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L21/84 , H01L21/336
CPC分类号： H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/42332 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , H01L29/7881 , H01L29/792
摘要： An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.

90. 发明申请

US20050233507A1 Semiconductor display device and method of manufacturing the same 有权
标题翻译：半导体显示装置及其制造方法
公开(公告)号：US20050233507A1
公开(公告)日：2005-10-20
申请号：US11151260
申请日：2005-06-14
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
IPC分类号： H01L51/50 , G09F9/30 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/32 , H01L29/49 , H01L29/786 , H01L29/40
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then. covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译：具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极层间绝缘膜。形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。然后形成开口的有机树脂膜。覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

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