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81. 发明申请

US20120056158A1 LIGHT EMITTING DIODES WITH A P-TYPE SURFACE BONDED TO A TRANSPARENT SUBMOUNT TO INCREASE LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有P型表面的发光二极管粘合到透明基体上以提高光提取效率
公开(公告)号：US20120056158A1
公开(公告)日：2012-03-08
申请号：US13296611
申请日：2011-11-15
申请人： Kenji Iso , Hirokuni Asamizu , Makoto Saito , Hitoshi Sato , Steven P. DenBaars , Shuji Nakamura
发明人： Kenji Iso , Hirokuni Asamizu , Makoto Saito , Hitoshi Sato , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.
摘要翻译：一种（Al，Ga，In）N基发光二极管（LED），包括与透明底层材料结合的LED的p型表面，以增加p型表面的光提取，其中LED是无基底膜。

82. 发明授权

US08053264B2 Photoelectrochemical etching of P-type semiconductor heterostructures 有权
标题翻译： P型半导体异质结构的光电化学蚀刻
公开(公告)号：US08053264B2
公开(公告)日：2011-11-08
申请号：US12464723
申请日：2009-05-12
申请人： Adele Tamboli , Evelyn Lynn Hu , Mathew C. Schmidt , Shuji Nakamura , Steven P. DenBaars
发明人： Adele Tamboli , Evelyn Lynn Hu , Mathew C. Schmidt , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L21/3213
CPC分类号： H01L21/30617 , H01L29/2003 , H01L33/0075
摘要： A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer.
摘要翻译：通过提供用于孔朝向待蚀刻的p型盖层的表面移动的驱动力，简单有效地对p型半导体层进行光电化学（PEC）蚀刻的方法，其中p型覆盖层为在异质结构上，异质结构从异质结构内部产生的内部偏压提供驱动力; 在异质结构的单独区域中产生电子 - 空穴对，而不是要蚀刻的表面; 并使用蚀刻剂溶液蚀刻p型层的表面。

83. 发明授权

US08050304B2 Group-III nitride based laser diode and method for fabricating same 有权
标题翻译： III族氮化物基激光二极管及其制造方法
公开(公告)号：US08050304B2
公开(公告)日：2011-11-01
申请号：US12880392
申请日：2010-09-13
申请人： Steven Denbaars , Shuji Nakamura , Monica Hansen
发明人： Steven Denbaars , Shuji Nakamura , Monica Hansen
IPC分类号： H01S5/00 , H04B10/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

84. 发明授权

US08022423B2 Standing transparent mirrorless light emitting diode 有权
标题翻译：站立透明无反射镜发光二极管
公开(公告)号：US08022423B2
公开(公告)日：2011-09-20
申请号：US12716650
申请日：2010-03-03
申请人： Shuji Nakamura , Steven P. DenBaars
发明人： Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/54 , H01L33/507 , H01L33/60 , H01L33/62 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16245 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014 , H01L2924/181 , H01L2933/0091 , H01L2224/48091 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element comprising an epoxy, glass, silicon or other material molded into an inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. In addition, the present invention stands the LED on end, i.e., rotates the position of the LED within the shaped optical element by approximately 90° as compared to a conventional LED, in order to extract light more effectively from the LED. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.
摘要翻译：一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或者与包含模制成倒圆锥形的环氧树脂，玻璃，硅或其它材料的成形光学元件组合，其中进入倒锥体的大部分光线处于临界角内并被提取。此外，为了从LED更有效地提取光，本发明将LED结束，即将LED在成形光学元件内的位置与常规LED相比旋转大约90°。本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。

85. 发明申请

US20110216795A1 SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION 有权
标题翻译： M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度
公开(公告)号：US20110216795A1
公开(公告)日：2011-09-08
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
IPC分类号： H01S5/343 , H01L33/06 , H01L33/18
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译：在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15

86. 发明申请

US20110193094A1 GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY 审中-公开
标题翻译：平面减少偏差密度的增长通过液相蒸发相外延的M-PLANE GALLIUM NITRIDE
公开(公告)号：US20110193094A1
公开(公告)日：2011-08-11
申请号：US13086961
申请日：2011-04-14
申请人： Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
发明人： Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647
摘要： A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
摘要翻译：生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。该方法通过侧向过度生长技术显着降低结构缺陷密度。制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

87. 发明申请

US20110145488A1 FLASH MEMORY MODULE, STORAGE APPARATUS USING FLASH MEMORY MODULE AS RECORDING MEDIUM AND ADDRESS TRANSLATION TABLE VERIFICATION METHOD FOR FLASH MEMORY MODULE 有权
标题翻译：闪速存储器模块，使用闪速存储器模块作为记录介质和地址翻译表的存储设备表闪存存储器模块的验证方法
公开(公告)号：US20110145488A1
公开(公告)日：2011-06-16
申请号：US13030575
申请日：2011-02-18
申请人： KATSUYA TANAKA , Shuji Nakamura
发明人： KATSUYA TANAKA , Shuji Nakamura
IPC分类号： G06F12/02 , G06F12/08
CPC分类号： G06F1/324 , G06F1/3225 , G06F1/3275 , G06F1/3296 , G06F3/0625 , G06F3/0634 , G06F3/0688 , G06F12/0246 , G06F12/1027 , Y02D10/126 , Y02D10/14 , Y02D10/154 , Y02D10/172 , Y02D50/20
摘要： A purpose of the invention is to immediately return the operation in a flash memory module from low power consumption mode to regular mode. A flash memory controller having memory that stores an address translation table for translating between a logical page address and a physical page address in the flash memory chip controls regular mode and low power consumption mode of operating at lower power consumption than in regular mode by halting operation, or decreasing power supply voltage or lowering operating frequency. A flash memory module having the flash memory controller verifies data in the address translation table while low power consumption mode is set.
摘要翻译：本发明的目的是立即将闪存模块中的操作从低功耗模式返回到常规模式。具有存储器的存储器，其存储用于在闪速存储器芯片中的逻辑页面地址和物理页面地址之间进行转换的地址转换表，通过停止操作来控制以比常规模式低的功耗操作的常规模式和低功耗模式，或降低电源电压或降低工作频率。具有闪速存储器控制器的闪存模块在设置低功耗模式的同时对地址转换表中的数据进行验证。

88. 发明授权

US07958391B2 Storage system and control method of storage system 有权
标题翻译：存储系统的存储系统和控制方法
公开(公告)号：US07958391B2
公开(公告)日：2011-06-07
申请号：US12880639
申请日：2010-09-13
申请人： Masanori Takada , Shuji Nakamura , Kentaro Shimada
发明人： Masanori Takada , Shuji Nakamura , Kentaro Shimada
IPC分类号： G06F11/00
CPC分类号： G06F11/2092 , G06F11/0724 , G06F11/0727 , G06F11/0772 , G06F11/079 , G06F11/0793 , G06F11/2007
摘要： A fault-tolerant storage system is provided. The storage system is composed of a controller having a plurality of processors and other units. When an error occurs in any one of the components in the controller, the storage system cuts off an I/O path of the controller, specifies the failed component in the cutoff status, and invalidates the failed component. After invalidating the failed component, the storage system determines whether it is operable only with the normal components, cancels (releases) the cutoff of the I/O path when it determines that it is operable, and resumes operation by rebooting.
摘要翻译：提供容错存储系统。存储系统由具有多个处理器和其它单元的控制器组成。当控制器中任何一个组件发生错误时，存储系统将切断控制器的I / O路径，指定处于截止状态的故障组件，并使故障组件无效。在使失败的组件无效后，存储系统确定它是否仅与正常组件一起使用，在确定它可操作时取消（释放）I / O路径的截止，并通过重新启动恢复操作。

89. 发明授权

US07956360B2 Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy 有权
标题翻译：通过氢化物气相外延生长平面缩小位错密度M面氮化镓
公开(公告)号：US07956360B2
公开(公告)日：2011-06-07
申请号：US11697457
申请日：2007-04-06
申请人： Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
发明人： Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036
CPC分类号： H01L21/0242 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647
摘要： A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
摘要翻译：生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。该方法通过侧向过度生长技术显着降低结构缺陷密度。制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

90. 发明申请

US20110103418A1 SUPERLUMINESCENT DIODES BY CRYSTALLOGRAPHIC ETCHING 审中-公开
标题翻译：超声致密二极管通过晶体刻蚀
公开(公告)号：US20110103418A1
公开(公告)日：2011-05-05
申请号：US12913638
申请日：2010-10-27
申请人： Matthew T. Hardy , You-Da Lin , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura , Kathryn M. Kelchner
发明人： Matthew T. Hardy , You-Da Lin , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura , Kathryn M. Kelchner
IPC分类号： H01S5/323 , H01L33/22 , H01L21/302
CPC分类号： H01L33/0045 , B82Y20/00 , H01S5/1082 , H01S5/22 , H01S5/34333
摘要： An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device.
摘要翻译：一种光电子器件，包括有源区和波导结构，以提供从有源区发射的光的光学限制; 在装置的相对端上的一对具有相反表面极性的小面; 和通过结晶化学蚀刻工艺被粗糙化的其中一个方面，其中该器件是基于非极性或半极性（Ga，In，Al，B）N的器件。

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