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81. 发明授权

US06320913B1 Circuit and method for controlling transmission amplifiers 失效
标题翻译：用于控制发射放大器的电路和方法
公开(公告)号：US06320913B1
公开(公告)日：2001-11-20
申请号：US09102415
申请日：1998-06-22
申请人： Masahiko Nakayama
发明人： Masahiko Nakayama
IPC分类号： H04K102
CPC分类号： H03G3/3042 , H03F3/72 , H03F2203/7239
摘要： A transmission amplifier control circuit which is capable of preventing an adverse effect such as data erroneous transmission due to variations in phase which may occur when plural amplifiers are switched and capable of improving the transmission efficiency and suppressing extra power consumption. The transmission amplifier control circuit includes amplification means 51 to 5n; switching means 6 for selectively switching at least one of the plural amplification means 51 to 5n; detection means 2 for detecting a timing at which the plural amplification means 51 to 5n are switched, using the format of data to be transmitted during data transmission; and amplification means changeover control means 3 for controlling a timing for switching the plural amplification means 51 to 5n, using both a detection signal from the detection means 2 and an output power control signal which is externally input and controls the output power of the transmission amplifier control circuit. Each of the plural amplification means 51 to 5n can have a different maximum gain.
摘要翻译：一种发送放大器控制电路，其能够防止由于在多个放大器被切换时可能发生的相位变化引起的数据错误发送的不利影响，并且能够提高传输效率并抑制额外的功耗。发送放大器控制电路包括放大装置51至5n; 切换装置6，用于选择性地切换多个放大装置51至5n中的至少一个; 检测装置2，用于在数据传输期间使用要发送的数据的格式来检测多个放大装置51至5n被切换的定时; 以及放大装置切换控制装置3，用于使用来自检测装置2的检测信号和外部输入的输出功率控制信号来控制用于切换多个放大装置51至5n的定时，并控制发射放大器的输出功率控制电路。多个放大单元51〜5n中的每一个可以具有不同的最大增益。

82. 发明授权

US09705076B2 Magnetoresistive element and manufacturing method of the same 有权
公开(公告)号：US09705076B2
公开(公告)日：2017-07-11
申请号：US14478971
申请日：2014-09-05
申请人： Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase , Masahiko Nakayama
发明人： Makoto Nagamine , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Kazuya Sawada , Toshihiko Nagase , Masahiko Nakayama
IPC分类号： H01L43/10 , H01L43/08 , H01L27/22 , H01L43/12
CPC分类号： H01L43/10 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer.

83. 发明授权

US09385304B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US09385304B2
公开(公告)日：2016-07-05
申请号：US14203249
申请日：2014-03-10
申请人： Masahiko Nakayama , Tadashi Kai , Masaru Toko , Hiroaki Yoda , Hyung Suk Lee , Jae Geun Oh , Choon Kun Ryu , Min Suk Lee
发明人： Masahiko Nakayama , Tadashi Kai , Masaru Toko , Hiroaki Yoda , Hyung Suk Lee , Jae Geun Oh , Choon Kun Ryu , Min Suk Lee
IPC分类号： H01L27/00 , H01L43/02 , H01L43/12 , H01L45/00 , G11C11/56 , G11C11/15 , G11C11/16 , H01L27/22 , H01L27/24 , H01L43/08 , H01L43/10
CPC分类号： H01L43/02 , G11C11/15 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/5607 , H01L27/222 , H01L27/228 , H01L27/2463 , H01L43/08 , H01L43/10 , H01L43/12 , H01L45/04
摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.
摘要翻译：根据一个实施例，公开了一种磁存储器。该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

84. 发明授权

US09178134B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09178134B2
公开(公告)日：2015-11-03
申请号：US14203198
申请日：2014-03-10
申请人： Masahiko Nakayama , Tadashi Kai , Masaru Toko , Toshihiko Nagase , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Masaru Toko , Toshihiko Nagase , Hiroaki Yoda
IPC分类号： H01L29/00 , H01L43/10 , H01L43/12 , H01L45/00 , H01L29/82 , H01L27/24 , H01L27/22
CPC分类号： H01L43/10 , H01L27/222 , H01L27/228 , H01L27/2463 , H01L29/82 , H01L43/08 , H01L43/12 , H01L45/06
摘要： According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.
摘要翻译：根据一个实施例，公开了一种磁阻元件。元件包括第一磁性膜，第二磁性膜和形成在第一磁性膜和第二磁性膜之间的第一非磁性层。第二磁性膜包括形成在第一非磁性层一侧的第一磁性层，形成在与第一非磁性层相反的一侧的第二磁性层和形成在第一磁性层和第二磁性层之间的第二非磁性层并含有TiN。

85. 发明授权

US09123879B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09123879B2
公开(公告)日：2015-09-01
申请号：US14202802
申请日：2014-03-10
申请人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
发明人： Masahiko Nakayama , Masatoshi Yoshikawa , Tadashi Kai , Yutaka Hashimoto , Masaru Toko , Hiroaki Yoda , Jae Geun Oh , Keum Bum Lee , Choon Kun Ryu , Hyung Suk Lee , Sook Joo Kim
IPC分类号： H01L27/00 , H01L43/02 , H01L27/22 , H01L43/08 , H01L43/12
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
摘要翻译：根据一个实施例，公开了一种磁阻元件。磁阻元件包括参考层，隧道势垒层，存储层。存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。

86. 发明授权

US08553450B2 Magnetic random access memory and write method of the same 有权
标题翻译：磁性随机存取存储器和写入方法相同
公开(公告)号：US08553450B2
公开(公告)日：2013-10-08
申请号：US12510063
申请日：2009-07-27
申请人： Keiji Hosotani , Masahiko Nakayama
发明人： Keiji Hosotani , Masahiko Nakayama
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161
摘要： A first magnetic layer has a magnetization fixed along one direction. A first nonmagnetic layer on the first magnetic layer functions as a first tunnel barrier. A second magnetic layer on the first nonmagnetic layer has a magnetization whose direction can be reversed by spin transfer current injection. A second nonmagnetic layer on the second magnetic layer functions as a second tunnel barrier. A third magnetic layer on the second nonmagnetic layer has a magnetization whose direction can be reversed by spin transfer through current injection at a current density different from the second magnetic layer. First magnetic, first nonmagnetic layer, and second magnetic layers exhibit a first magnetoresistive effect. Second magnetic, second nonmagnetic, and third magnetic layers exhibit a second magnetoresistive effect. A magnetoresistive effect element records and reads out data of at least three levels based on a synthetic resistance from the first and second magnetoresistive effects.
摘要翻译：第一磁性层具有沿着一个方向固定的磁化。第一磁性层上的第一非磁性层用作第一隧道势垒。第一非磁性层上的第二磁性层具有通过自旋转移电流注入方向可以反转的磁化。第二磁性层上的第二非磁性层用作第二隧道势垒。第二非磁性层上的第三磁性层具有磁化，其方向可以通过在不同于第二磁性层的电流密度的电流注入的自旋转移来反转。第一磁性，第一非磁性层和第二磁性层表现出第一磁阻效应。第二磁性，第二非磁性和第三磁性层表现出第二磁阻效应。磁阻效应元件基于来自第一和第二磁阻效应的合成电阻来记录和读出至少三个电平的数据。

87. 发明授权

US08279663B2 Magnetoresistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08279663B2
公开(公告)日：2012-10-02
申请号：US13184976
申请日：2011-07-18
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Hiroaki Yoda , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Hiroaki Yoda , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/226
摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.
摘要翻译：磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 第三铁磁层，其设置在所述第二铁磁层的与所述第一非磁性层相反的一侧上，并且具有与所述膜平面平行的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

88. 发明授权

US08223533B2 Magnetoresistive effect device and magnetic memory 有权
标题翻译：磁阻效应器和磁记忆体
公开(公告)号：US08223533B2
公开(公告)日：2012-07-17
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
发明人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

89. 发明授权

US08208292B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08208292B2
公开(公告)日：2012-06-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

90. 发明授权

US08169817B2 Magnetoresistive device and magnetic random access memory 有权
标题翻译：磁阻器件和磁性随机存取存储器
公开(公告)号：US08169817B2
公开(公告)日：2012-05-01
申请号：US12715699
申请日：2010-03-02
申请人： Masahiko Nakayama , Hiroaki Yoda , Tadashi Kai , Hisanori Aikawa , Katsuya Nishiyama , Jyunichi Ozeki
发明人： Masahiko Nakayama , Hiroaki Yoda , Tadashi Kai , Hisanori Aikawa , Katsuya Nishiyama , Jyunichi Ozeki
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C7/04 , G11C11/161 , G11C11/1675 , H01F10/126 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/10
摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.
摘要翻译：磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。

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