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81. 发明申请

US20130313581A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE 失效
标题翻译：半导体发光器件和发光模块
公开(公告)号：US20130313581A1
公开(公告)日：2013-11-28
申请号：US13601336
申请日：2012-08-31
申请人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
发明人： Hideto Furuyama , Akihiro Kojima , Miyoko Shimada , Yosuke Akimoto , Hideyuki Tomizawa
IPC分类号： H01L33/50 , H01L33/08
CPC分类号： H01L33/505
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

82. 发明授权

US08457060B2 Radio communication system, base station apparatus, mobile station apparatus, and radio communication method 有权
公开(公告)号：US08457060B2
公开(公告)日：2013-06-04
申请号：US13146370
申请日：2010-01-21
申请人： Shoichi Suzuki , Yosuke Akimoto
发明人： Shoichi Suzuki , Yosuke Akimoto
IPC分类号： H04W4/00
摘要： Mobile station apparatuses are provided that receive downlink allocation information from a base station apparatus in a downlink control channel. Each mobile station apparatus performs demodulation, decoding, and cyclic redundancy check on the downlink shared channel in accordance with the downlink allocation information received. Each mobile station apparatus generates an acknowledgement or a non-acknowledgement in accordance with the result of the cyclic redundancy check. Each mobile station apparatus then selects the lowest number and the second lowest number of the numbers of the control channel elements in which the downlink allocation information is received. Based on the selected numbers, each mobile station apparatus 2 obtains a physical resource block (PRB), as well as a cyclic shift and an orthogonal code sequence in the time domain for each transmission antenna, and spreads the acknowledgement or the non-acknowledgement and the uplink pilot channel.

83. 发明申请

US20130069102A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHT-EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光装置，发光模块及其制造方法
公开(公告)号：US20130069102A1
公开(公告)日：2013-03-21
申请号：US13607418
申请日：2012-09-07
申请人： Akiya KIMURA , Kazuhito Higuchi , Hideo Nishiuchi , Susumu Obata , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
发明人： Akiya KIMURA , Kazuhito Higuchi , Hideo Nishiuchi , Susumu Obata , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has a concave edge but not a convex edge, and has at most three exposed sides, and a second terminal that is electrically coupled to the second electrode, has a concave edge but not a convex edge, and has at most three exposed sides.
摘要翻译：一种半导体发光器件，包括被配置为从其主表面发光的层叠体，每个设置在层叠体的与主表面相对的表面上的第一和第二电极，电耦合的第一端子具有凹形边缘但不具有凸边缘，并且具有至多三个外露侧面，并且电耦合到第二电极的第二端子具有凹形边缘但不具有凸起边缘，并且具有至多三个暴露的一面。

84. 发明申请

US20120241792A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120241792A1
公开(公告)日：2012-09-27
申请号：US13424687
申请日：2012-03-20
申请人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
发明人： Susumu Obata , Kazuhito Higuchi , Hideo Nishiuchi , Akiya Kimura , Toshiya Nakayama , Yoshiaki Sugizaki , Akihiro Kojima , Yosuke Akimoto
IPC分类号： H01L33/60 , H01L33/00
CPC分类号： H01L33/62 , H01L33/486 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.
摘要翻译：根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。层叠体包括第一和第二半导体层和发光层。第一和第二电极分别连接到第一和第二半导体层。第一和第二互连分别连接到第一和第二电极。第一和第二支柱分别连接到第一和第二互连。第一绝缘层设置在互连和支柱上。第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

85. 发明申请

US20120088458A1 TRANSMISSION DEVICE, RECEIVING DEVICE, COMMUNICATION SYSTEM, AND COMMUNICATION METHOD 审中-公开
标题翻译：传输设备，接收设备，通信系统和通信方法
公开(公告)号：US20120088458A1
公开(公告)日：2012-04-12
申请号：US13378311
申请日：2010-05-26
申请人： Toshizo Nogami , Kazuyuki Shimezawa , Shoichi Suzuki , Yosuke Akimoto
发明人： Toshizo Nogami , Kazuyuki Shimezawa , Shoichi Suzuki , Yosuke Akimoto
IPC分类号： H04B17/00
CPC分类号： H04W24/10 , H04B7/0632 , H04B7/0645 , H04B17/24 , H04L1/003 , H04L1/0031
摘要： A transmission device includes: a transmitting unit that transmits a common reference signal and a receiving device-specific reference signal to a receiving device; a selecting unit that selects either a first mode reporting a receiving quality using only the common reference signal or a second mode reporting a receiving quality using at least the receiving device-specific reference signal; and a notifying unit that notifies a mode selected by the selecting unit to the receiving device.
摘要翻译：传输设备包括：发送单元，其向接收设备发送公共参考信号和接收设备专用参考信号; 选择单元，其选择仅使用公共参考信号报告接收质量的第一模式或者使用至少所述接收设备专用参考信号来报告接收质量的第二模式; 以及通知单元，其将由所述选择单元选择的模式通知给所述接收装置。

86. 发明申请

US20110297998A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110297998A1
公开(公告)日：2011-12-08
申请号：US13052250
申请日：2011-03-21
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Izuka , Yoshiaki Sugizaki
IPC分类号： H01L33/36 , H01L21/66
CPC分类号： H01L33/62 , H01L27/153 , H01L33/0079 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二金属柱绝缘层。半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。

87. 发明申请

US20110297997A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110297997A1
公开(公告)日：2011-12-08
申请号：US13052248
申请日：2011-03-21
申请人： Miyuki Izuka , Yosuke Akimoto , Akihiro Kojima , Yoshiaki Sugizaki
发明人： Miyuki Izuka , Yosuke Akimoto , Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/38
CPC分类号： H01L33/44 , H01L33/38 , H01L33/486 , H01L33/50 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二绝缘层。半导体层包括第一主表面，与第一主表面相对的第二主表面和发光层。第一电极设置在包括第二主表面上的发光层的区域上。第二电极设置在第二主表面上并且以平面视图插入第一电极中。

88. 发明申请

US20110297995A1 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME 审中-公开
标题翻译：用于制造发光装置的方法和由其制造的发光装置
公开(公告)号：US20110297995A1
公开(公告)日：2011-12-08
申请号：US12888754
申请日：2010-09-23
申请人： Yosuke Akimoto , Ryuichi Togawa , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Ryuichi Togawa , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
IPC分类号： H01L33/38 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/62 , H01L2224/11 , H01L2224/14104 , H01L2924/00012
摘要： In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. Each of band-gap energy of the second insulating film and band-gap energy of the semiconductor layer are smaller than energy of the laser light.
摘要翻译：在一个实施例中，公开了一种用于制造发光器件的方法。该方法可以包括从半导体层去除衬底。半导体层设置在基板的第一主表面上。半导体层包括发光层。至少半导体层的顶表面和侧表面被第一绝缘膜覆盖。提供与半导体层电连接的第一电极部分和第二电极部分。第一绝缘膜被第二绝缘膜覆盖。通过从基板的第二主表面侧的激光照射半导体层来进行去除。第二主表面与第一主表面相对。第二绝缘膜的带隙能量和半导体层的带隙能量的每一个都小于激光的能量。

89. 发明申请

US20110284910A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110284910A1
公开(公告)日：2011-11-24
申请号：US12886092
申请日：2010-09-20
申请人： Miyuki Iduka , Yosuke Akimoto , Akihiro Kojima , Yoshiaki Sugizaki
发明人： Miyuki Iduka , Yosuke Akimoto , Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/38
CPC分类号： H01L33/385 , H01L33/14
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二绝缘层。第一电极设置在半导体层的第二主表面上。第二电极设置在发光层和第一主表面之间的半导体层的一部分的侧面上。第二互连层设置在与第二主表面相对的一侧的第二开口中和第一绝缘层上，以连接到设置在侧面上的第二电极。第二互连层设置在半导体层的该部分的侧面上并插入第二电极。

90. 发明申请

US20110006425A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110006425A1
公开(公告)日：2011-01-13
申请号：US12726520
申请日：2010-03-18
申请人： Makoto Wada , Noriaki Matsunaga , Yosuke Akimoto
发明人： Makoto Wada , Noriaki Matsunaga , Yosuke Akimoto
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/76807 , H01L21/76843 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/528 , H01L23/53276 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to one embodiment includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate and containing a wiring trench; a first catalyst layer provided directly or via another member on side and bottom surfaces of the wiring trench; and a first graphene layer provided in the wiring trench so as to be along the side and bottom surface of the wiring trench, the first graphene layer being provided on the first catalyst layer so as to be in contact with the first catalyst layer.
摘要翻译：根据一个实施例的半导体器件包括：半导体衬底; 绝缘膜，设置在所述半导体基板上并且包含布线沟槽; 第一催化剂层，直接地或经由布线沟槽的侧表面和底表面上的另一个构件提供; 以及设置在所述布线沟槽中以沿着所述布线沟槽的侧面和底面的第一石墨烯层，所述第一石墨烯层设置在所述第一催化剂层上以与所述第一催化剂层接触。

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